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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIBE20GPBF

Name: IRFIBE20GPBF
Brand: Vishay Siliconix
SKU: IRFIBE20GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIBE20GPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIBE20GPBF.pdf

Description:: MOSFET N-CH 800V 1.4A TO220-3

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Product details

Overview

IRFIBE20GPBF from Vishay Siliconix is an isolated high-voltage N-channel power MOSFET in TO-220 FULLPAK package, rated for 800 V drain-source voltage, 6.5 Ω R_DS(on) at V_GS = 10 V, and 2.5 kV_RMS isolation (60 s, 60 Hz), designed for high-reliability flyback and offline SMPS primary-side switching.

For engineers reviewing the IRFIBE20GPBF datasheet, IRFIBE20GPBF pinout, IRFIBE20GPBF application, or IRFIBE20GPBF equivalent, key selection considerations include its isolated package eliminating external insulation hardware, 4.8 mm sink-to-lead creepage, and validated avalanche energy rating of 180 mJ under unclamped inductive conditions.

Technical Context

This third-generation power MOSFET integrates a monolithic silicon die with internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH) and features a dynamic dV/dt rating of 2.0 V/ns, enabling robust operation in fast-switching high-voltage topologies. Its gate charge profile shows Q_g = 38 nC, Q_gd = 21 nC, and Q_gs = 5.0 nC, supporting predictable turn-on/turn-off timing with 8.2 ns delay and 27 ns fall time under standard test conditions.

The device's thermal design leverages low junction-to-case resistance (R_thJC = 4.1 °C/W) and high-voltage isolation equivalent to a 100 µm mica barrier, allowing direct mounting to heatsinks via single-screw or clip fixation without insulating washers. Its body diode exhibits t_rr = 380–570 ns and Q_rr = 0.94–1.4 µC at I_F = 1.8 A, dI/dt = 100 A/µs, supporting moderate-frequency synchronous rectification or snubberless operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input offline converters up to 380 V DC bus.
R_DS(on)	6.5 Ω @ V_GS = 10 V - defines conduction loss in continuous current mode; enables 1.4 A continuous drain at T_C = 25 °C.
Q_g	38 nC - determines gate drive power requirement and switching speed control; compatible with standard 18 Ω gate resistors.
Isolation Voltage	2.5 kV_RMS, 60 s - eliminates need for external isolation hardware in commercial-industrial AC/DC supplies.
E_AS	180 mJ - specifies single-pulse avalanche ruggedness under unclamped inductive load, critical for transformer leakage energy handling.
t_rr	380–570 ns - body diode recovery time constrains maximum operating frequency when used in quasi-resonant or ZVS topologies.
P_D	30 W @ T_C = 25 °C - sets thermal derating envelope; linear derating factor 0.24 W/°C allows ~12.5 W at T_C = 100 °C.

Pinout & Package

IRFIBE20GPBF uses the TO-220 FULLPAK package - a molded, isolated variant of TO-220 with integrated high-dielectric-strength compound, 4.8 mm minimum creepage between sink and leads, and exposed copper tab serving as drain terminal. Mounting requires only one M3 screw (0.6 N·m torque) or clip, with no additional insulator needed.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level gate drive; threshold V_GS(th) = 2.0–4.0 V ensures reliable turn-on with standard drivers.
D (Drain)	Main high-side current path	Connected internally to exposed copper tab; serves as thermal and electrical drain node; must be electrically isolated from heatsink via package molding.
S (Source)	Reference and return path	Provides low-impedance return for gate drive and load current; body diode anode; referenced to system ground in common-source configuration.

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates external insulation hardware and reduces BOM count in commercial-industrial AC/DC adapters and power supplies.
2.5 kV_RMS isolation	Validated per IEC 60747-5-2; enables compliance with reinforced insulation requirements without added barriers or spacing.
Low R_thJC = 4.1 °C/W	Enables efficient heat transfer from die to heatsink, supporting higher power density than standard TO-220 with mica + sil-pad.
Dynamic dV/dt = 2.0 V/ns	Ensures immunity to false triggering during high dv/dt transients in high-voltage switching nodes.
Unclamped avalanche rating	180 mJ single-pulse energy tolerance provides margin against transformer leakage spikes in flyback converters.

Applications

AC/DC Adapter Primary Switch	Industrial Flyback Power Supply
Use Scenario: 12–24 W universal-input (85–265 V_AC) wall adapter with fixed-frequency PWM control. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback topology. Use Value: Isolated package avoids creepage/clearance violations on PCB; 800 V rating accommodates 380 V DC bus with safety margin.	Use Scenario: 36 W industrial control power supply operating in harsh ambient (T_A ≤ 70 °C) with wide line regulation. IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback with valley switching. Use Value: 180 mJ E_AS handles transformer leakage energy without snubber; 2.5 kV_RMS isolation meets IEC 62368-1 reinforced insulation.
LED Driver Primary Switch	Offline SMPS Auxiliary Supply
Use Scenario: Constant-current LED driver for street lighting with surge immunity up to 4 kV line-to-line. IC Role / Device Role / Timing Role: High-side switch in primary-side regulated flyback with integrated feedback. Use Value: 2.0 V/ns dV/dt rating prevents spurious turn-on during lightning-induced transients; 150 °C max T_J supports extended lifetime at elevated ambient.	Use Scenario: Standby auxiliary supply (<500 mW) powering microcontroller and gate drivers in main SMPS. IC Role / Device Role / Timing Role: Low-duty-cycle, high-V_DS switch in self-oscillating flyback. Use Value: Low Q_g (38 nC) and fast switching (t_f = 27 ns) minimize standby losses; isolated package simplifies creepage layout on compact board.

AC/DC Adapter Primary Switch

Industrial Flyback Power Supply

Use Scenario: 12–24 W universal-input (85–265 V_AC) wall adapter with fixed-frequency PWM control.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: Isolated package avoids creepage/clearance violations on PCB; 800 V rating accommodates 380 V DC bus with safety margin.

Use Scenario: 36 W industrial control power supply operating in harsh ambient (T_A ≤ 70 °C) with wide line regulation.

IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback with valley switching.

Use Value: 180 mJ E_AS handles transformer leakage energy without snubber; 2.5 kV_RMS isolation meets IEC 62368-1 reinforced insulation.

LED Driver Primary Switch

Offline SMPS Auxiliary Supply

Use Scenario: Constant-current LED driver for street lighting with surge immunity up to 4 kV line-to-line.

IC Role / Device Role / Timing Role: High-side switch in primary-side regulated flyback with integrated feedback.

Use Value: 2.0 V/ns dV/dt rating prevents spurious turn-on during lightning-induced transients; 150 °C max T_J supports extended lifetime at elevated ambient.

Use Scenario: Standby auxiliary supply (<500 mW) powering microcontroller and gate drivers in main SMPS.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-V_DS switch in self-oscillating flyback.

Use Value: Low Q_g (38 nC) and fast switching (t_f = 27 ns) minimize standby losses; isolated package simplifies creepage layout on compact board.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage isolated MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	800 V, 0.55 Ω R_DS(on), non-isolated TO-247; no certified isolation voltage.	Requires external isolation hardware (mica/sil-pad); higher conduction efficiency but larger footprint and assembly cost.	Choose when lower R_DS(on) and higher current (>2 A) are prioritized over simplified thermal/mechanical integration.
IXTP2N80P	800 V, 7.5 Ω R_DS(on), non-isolated TO-220; R_thJC = 3.5 °C/W, E_AS = 120 mJ.	Lacks certified isolation; lower avalanche energy limits use in high-leakage transformers or poor-layout designs.	Choose for cost-sensitive designs where external insulation is already implemented and thermal margin is sufficient.

Compared with STW20NK80Z and IXTP2N80P, the IRFIBE20GPBF trades higher R_DS(on) for integrated isolation, reduced assembly steps, and superior avalanche ruggedness-making it optimal for space-constrained, safety-critical, and medium-power offline SMPS where reliability and layout simplicity outweigh raw conduction efficiency.

Availability

IRFIBE20GPBF is available at Aetrix Electronics and suitable for AC/DC adapters, industrial flyback power supplies, and LED driver primary-side switching requiring stable component supply and long-term lifecycle support.

Supply support for IRFIBE20GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFIBE20GPBF belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for simplified, safe, and thermally efficient primary-side switching in offline AC/DC conversion systems.

FAQ

What is the maximum continuous drain current for IRFIBE20GPBF at 100 °C case temperature?

The IRFIBE20GPBF supports 0.86 A continuous drain current at T_C = 100 °C, derived from its 1.4 A rating at 25 °C and linear derating factor of 0.24 W/°C. This value reflects thermal limitations under sustained conduction, not transient capability. Designers must verify junction temperature rise using R_thJC = 4.1 °C/W and actual power dissipation in their layout. The IRFIBE20GPBF datasheet confirms this rating in Absolute Maximum Ratings Table.

Does IRFIBE20GPBF require external insulation when mounted to a heatsink?

No, the IRFIBE20GPBF does not require external insulation when mounted to a heatsink because its TO-220 FULLPAK package provides built-in 2.5 kV_RMS isolation and 4.8 mm sink-to-lead creepage. The molding compound replaces the need for mica washers or silicone pads. Mounting uses a single M3 screw (0.6 N·m torque) directly to the heatsink, as confirmed in Vishay's Package Information document 91359. This feature is intrinsic to the IRFIBE20GPBF construction.

What is the gate threshold voltage range for IRFIBE20GPBF?

The gate-source threshold voltage (V_GS(th)) for IRFIBE20GPBF is specified as 2.0 V minimum to 4.0 V maximum at V_DS = V_GS and I_D = 250 µA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity. The IRFIBE20GPBF is not a logic-level device; it requires ≥10 V for full enhancement, as confirmed in the Static Characteristics table of datasheet 91183.

Can IRFIBE20GPBF be used in avalanche-mode operation?

Yes, the IRFIBE20GPBF is rated for repetitive avalanche operation with I_AR = 1.4 A and E_AR = 3.0 mJ, and single-pulse avalanche energy of 180 mJ. These values are validated per JEDEC standards and documented in the Absolute Maximum Ratings and Specifications tables. Use in controlled avalanche requires careful attention to pulse width, duty cycle, and junction temperature limits-details confirmed for IRFIBE20GPBF in Figure 12 and related test conditions.

What is the body diode reverse recovery charge (Q_rr) of IRFIBE20GPBF?

The body diode reverse recovery charge (Q_rr) of IRFIBE20GPBF is specified as 0.94 µC typical and 1.4 µC maximum at T_J = 25 °C, I_F = 1.8 A, and dI/dt = 100 A/µs. This parameter directly impacts switching losses and EMI in topologies where the body diode conducts, such as quasi-resonant flyback. The IRFIBE20GPBF datasheet reports Q_rr in the Drain-Source Body Diode Characteristics section (page 2).

IRFIBE20GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIBE20GPBF FAQ

1.How can I place an order for IRFIBE20GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIBE20GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIBE20GPBF reliable?

The price and inventory of IRFIBE20GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIBE20GPBF is usually 5 days.

3.What payment methods are accepted for IRFIBE20GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIBE20GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIBE20GPBF?

IRFIBE20GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIBE20GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIBE20GPBF?

For technical support, including IRFIBE20GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIBE20GPBF requirements.

6.How does Aetrix verify that IRFIBE20GPBF is sourced from the original manufacturer or authorized distributors?

All IRFIBE20GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIBE20GPBF meets industry standards.

7.What is the process for return or replacement of IRFIBE20GPBF?

All IRFIBE20GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIBE20GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIBE20GPBF part is unused and in its original packaging.

Return procedure for IRFIBE20GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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