Vishay Siliconix IRFIBE30G

Overview

IRFIBE30G from Vishay Siliconix is an isolated N-channel power MOSFET in TO-220 FULLPAK package, rated for 800 V drain-source voltage, 3.0 Ω R_DS(on) at V_GS = 10 V, and 2.1 A continuous drain current at T_C = 25 °C. It delivers high-voltage isolation (2.5 kV_RMS, 60 s), low thermal resistance (R_thJC = 3.6 °C/W), and rugged avalanche capability (E_AS = 240 mJ), targeting flyback and offline SMPS primary switches.

For engineers reviewing the IRFIBE30G datasheet, IRFIBE30G pinout, IRFIBE30G application, or IRFIBE30G equivalent, key selection criteria include its isolated TO-220 FULLPAK construction, 800 V blocking rating, 2.5 kV_RMS isolation, body diode recovery time (t_rr = 480–720 ns), and gate charge profile (Q_g = 78 nC) for hard-switched high-voltage converters.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for commercial-industrial offline power supplies. Its isolated TO-220 FULLPAK package integrates high-dielectric molding compound enabling 2.5 kV_RMS isolation without external insulation hardware, while maintaining low R_thJC (3.6 °C/W) for efficient heatsink coupling.

The IRFIBE30G features a dynamic dV/dt rating of 2.0 V/ns and supports unclamped inductive switching with repetitive avalanche current I_AR = 2.1 A. Its body diode exhibits t_rr = 480–720 ns and Q_rr = 1.8–2.7 μC under standardized conditions (T_J = 25 °C, I_F = 4.1 A, dI/dt = 100 A/μs), critical for ZVS-capable topologies.

Key Specifications

Pinout & Package

IRFIBE30G uses the TO-220 FULLPAK package - an isolated variant of TO-220 with integrated high-dielectric molding compound. The tab (drain) is electrically isolated from the leads, enabling direct mounting to a grounded heatsink without additional insulation hardware. Dimensions conform to Vishay specification 91359 (Option 1 or 2), with lead pitch 2.54 mm and creepage distance ≥4.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage isolated MOSFET applications.

Compared with STW20NK80Z and IXTH3N80L, the IRFIBE30G uniquely combines 800 V rating, 2.5 kV_RMS isolation, and TO-220 FULLPAK form factor-enabling simplified mechanical integration and reduced BOM count in space-constrained industrial power supplies without sacrificing ruggedness or thermal performance.

Availability

IRFIBE30G is available at Aetrix Electronics and suitable for industrial flyback converters, AC-DC adapters, LED driver power stages, and industrial control power supplies requiring stable component supply, long-term lifecycle support, and certified isolation compliance.

Supply support for IRFIBE30G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, headquartered in Malvern, PA, with vertical fabrication capabilities across silicon MOSFETs, diodes, resistors, and capacitors.

The IRFIBE30G belongs to Vishay Siliconix's high-voltage isolated MOSFET product line, engineered specifically for reliability-critical offline power conversion where safety isolation, thermal efficiency, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for IRFIBE30G at 100 °C case temperature?

The IRFIBE30G has a continuous drain current rating of 1.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be applied in thermal design calculations alongside R_thJC = 3.6 °C/W and ambient conditions. The IRFIBE30G datasheet confirms this value under Note "a" referencing junction temperature limits.

Does IRFIBE30G require external insulation when mounted to a grounded heatsink?

No, the IRFIBE30G does not require external insulation when mounted to a grounded heatsink. Its TO-220 FULLPAK package provides 2.5 kV_RMS isolation between the drain tab and leads, validated per IEC 60747-5-2. The molding compound achieves isolation equivalent to a 100 µm mica barrier, eliminating insulating washers or pads in compliant designs. This feature is explicitly stated in the Vishay S21-0976 datasheet.

What is the typical body diode reverse recovery charge (Q_rr) for IRFIBE30G?

The typical body diode reverse recovery charge (Q_rr) for IRFIBE30G is 1.8–2.7 µC, measured at T_J = 25 °C, I_F = 4.1 A, and dI/dt = 100 A/µs. This parameter directly influences switching loss and EMI in discontinuous conduction mode flyback converters. The IRFIBE30G datasheet specifies Q_rr in the "Drain-Source Body Diode Characteristics" table on page 2.

Can IRFIBE30G be used in avalanche mode for energy clamping?

Yes, the IRFIBE30G is rated for repetitive avalanche operation with I_AR = 2.1 A and E_AR = 3.5 mJ, and single-pulse avalanche energy E_AS = 240 mJ. These ratings are validated per JEDEC standards and allow controlled clamping of inductive energy without external snubbers in properly designed circuits. The IRFIBE30G datasheet defines these parameters in the Absolute Maximum Ratings section and Fig. 9c.

What is the gate-source threshold voltage range for IRFIBE30G?

The gate-source threshold voltage (V_GS(th)) for IRFIBE30G is 2.0–4.0 V, measured at V_DS = V_GS and I_D = 250 µA. This range ensures compatibility with standard 10 V gate drivers while providing noise immunity against false turn-on. The specification appears in the "Static" section of the Electrical Characteristics table on page 2 of the IRFIBE30G datasheet.