Vishay Siliconix IRFIBE30GPBF

Overview

IRFIBE30GPBF from Vishay Siliconix is an isolated N-channel power MOSFET in TO-220 FULLPAK package, rated for 800 V drain-source voltage, 3.0 Ω R_DS(on) at V_GS = 10 V, and 2.1 A continuous drain current at T_C = 25 °C. It delivers high-voltage isolation (2.5 kV_RMS, 60 s), low thermal resistance (R_thJC = 3.6 °C/W), and robust avalanche capability (E_AS = 240 mJ), enabling use in offline SMPS flyback and auxiliary power supplies.

For engineers reviewing the IRFIBE30GPBF datasheet, IRFIBE30GPBF pinout, IRFIBE30GPBF application, or IRFIBE30GPBF equivalent, key selection criteria include its isolated TO-220 FULLPAK construction, 800 V blocking rating, 2.5 kV_RMS isolation, body diode recovery time (t_rr = 480–720 ns), and gate charge profile (Q_g = 78 nC) for hard-switched high-voltage DC-DC stages.

Technical Context

This device implements a third-generation planar vertical DMOS structure optimized for fast switching and ruggedness in high-voltage unidirectional power conversion. Its isolated package integrates dielectric molding compound providing 2.5 kV_RMS insulation between drain tab and leads, eliminating external insulators in commercial-industrial designs.

The MOSFET supports unclamped inductive switching with repetitive avalanche current I_AR = 2.1 A and single-pulse energy E_AS = 240 mJ. Dynamic dV/dt rating of 2.0 V/ns and body diode reverse recovery parameters (Q_rr = 1.8–2.7 μC, t_rr = 480–720 ns) are specified under defined test conditions (T_J = 25 °C, I_F = 4.1 A, dI/dt = 100 A/μs).

Key Specifications

Pinout & Package

IRFIBE30GPBF uses the TO-220 FULLPAK package: isolated plastic housing with drain-connected metal tab, 3-lead through-hole configuration (G, D, S), 15.87 mm length, 10.10 mm width, 4.70 mm height, and 4.8 mm creepage distance from sink to lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage isolated MOSFET applications.

Compared with STP8NK80ZFP and FQP8N80C, IRFIBE30GPBF uniquely integrates 2.5 kV_RMS isolation and 240 mJ avalanche energy in a single TO-220 FULLPAK package-reducing component count and improving reliability in safety-regulated AC-DC systems without compromising thermal performance.

Availability

IRFIBE30GPBF is available at Aetrix Electronics and suitable for AC-DC adapter auxiliary supplies, flyback converter primary switches, and industrial control power modules requiring stable component supply and long-lifecycle support.

Supply support for IRFIBE30GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFIBE30GPBF belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for simplified, safety-compliant design of offline auxiliary and low-power isolated DC-DC converters.

FAQ

What is the maximum continuous drain current for IRFIBE30GPBF at 100 °C case temperature?

The maximum continuous drain current for IRFIBE30GPBF is 1.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the device's R_thJC = 3.6 °C/W and package construction. Designers must ensure heatsink interface resistance and ambient conditions maintain T_C ≤ 100 °C to sustain this current level reliably in production use of IRFIBE30GPBF.

Does IRFIBE30GPBF require external insulation when mounted to a heatsink?

No, IRFIBE30GPBF does not require external insulation when mounted to a heatsink. Its TO-220 FULLPAK package provides 2.5 kV_RMS isolation between the drain-connected tab and all leads, equivalent to a 100 µm mica barrier. This built-in isolation eliminates the need for insulating pads or washers in compliant AC-DC designs, reducing assembly complexity and cost while maintaining safety certification integrity for IRFIBE30GPBF installations.

What is the gate-source threshold voltage range for IRFIBE30GPBF?

The gate-source threshold voltage (V_GS(th)) for IRFIBE30GPBF is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 µA. This range indicates the minimum gate voltage required to begin channel formation and confirms compatibility with standard 10 V gate drivers. The typical value falls within this span, and designers should verify turn-on behavior across temperature and manufacturing variation when using IRFIBE30GPBF in critical timing or low-power wake-up circuits.

Can IRFIBE30GPBF be used in avalanche mode repeatedly?

Yes, IRFIBE30GPBF is rated for repetitive avalanche operation with I_AR = 2.1 A and E_AR = 3.5 mJ under defined conditions (pulse width ≤ 300 µs, duty cycle ≤ 2 %). This capability allows controlled energy absorption during transient overloads without device failure. However, designers must adhere strictly to the SOA curve (Fig. 8), limit pulse repetition, and monitor junction temperature to avoid cumulative degradation-making IRFIBE30GPBF suitable for robust flyback and snubberless designs when applied per Vishay's guidelines.

What is the drain-to-sink capacitance of IRFIBE30GPBF and why does it matter?

The drain-to-sink capacitance of IRFIBE30GPBF is 12 pF at f = 1.0 MHz, measured between the drain (tab) and external heatsink. This parameter directly impacts common-mode EMI generation and Y-capacitor sizing in EMI filters. A low value like 12 pF helps minimize leakage current and improves EMC compliance in Class II power supplies-critical for meeting EN 55032 and IEC 62368-1 requirements when designing with IRFIBE30GPBF in safety-isolated topologies.