Vishay Siliconix IRFIBF20GPBF

Overview

IRFIBF20GPBF from Vishay Siliconix is a 900 V, 1.2 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 8.0 Ω R_DS(on) at V_GS = 10 V, and 2.5 kV_RMS isolation rating - designed for high-voltage flyback and offline SMPS primary-side switching where galvanic isolation and avalanche ruggedness are critical.

For engineers reviewing the IRFIBF20GPBF datasheet, IRFIBF20GPBF pinout, IRFIBF20GPBF application, or IRFIBF20GPBF equivalent, this device requires attention to its 4.1 °C/W junction-to-case thermal resistance, 38 nC total gate charge, unclamped avalanche energy rating (150 mJ), and body diode recovery characteristics (t_rr = 350–530 ns) when evaluating replacement in high-reliability industrial power supplies.

Technical Context

This third-generation high-voltage MOSFET employs planar V-groove technology optimized for fast switching and robust unclamped inductive switching. Its isolated TO-220 FULLPAK package integrates a high-dielectric molding compound enabling 2.5 kV_RMS isolation without external insulators.

The device features a 1.5 V/ns peak diode recovery dV/dt rating, 1.2 A continuous source-drain diode current, and specified avalanche capability (E_AS = 150 mJ, I_AR = 1.2 A) - confirming suitability for repetitive energy-dissipating switching in non-synchronous topologies.

Key Specifications

Pinout & Package

IRFIBF20GPBF uses the TO-220 FULLPAK package with an electrically isolated metal tab (drain-connected), enabling direct heatsink mounting without insulating washers. The molded case provides 2.5 kV_RMS isolation between drain and heatsink per 60 s test at 60 Hz.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage isolated MOSFET applications.

Compared with STW9NK90Z and FQP9N90C, IRFIBF20GPBF trades off current rating and R_DS(on) for certified isolation, low thermal resistance, and guaranteed avalanche ruggedness - making it uniquely suited for space-constrained, safety-critical low-to-mid power SMPS where board-level insulation simplification is mandatory.

Availability

IRFIBF20GPBF is available at Aetrix Electronics and suitable for AC/DC auxiliary power supplies, industrial flyback converters, and high-voltage sensor interfaces requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-certified designs.

Supply support for IRFIBF20GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFIBF20GPBF belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for offline power conversion topologies demanding reinforced insulation, avalanche tolerance, and simplified thermal management in compact form factors.

FAQ

What is the maximum continuous drain current for IRFIBF20GPBF at 100 °C case temperature?

The maximum continuous drain current for IRFIBF20GPBF is 0.79 A when the case temperature is maintained at 100 °C. This value reflects thermal derating based on its 4.1 °C/W junction-to-case thermal resistance and 150 °C maximum junction temperature. Designers must ensure heatsink design maintains T_C ≤ 100 °C to sustain this current without exceeding TJ limits. IRFIBF20GPBF's R_DS(on) increases with temperature, further constraining usable current in high-ambient environments.

Does IRFIBF20GPBF have a fully rated avalanche energy specification?

Yes, IRFIBF20GPBF is fully specified for avalanche operation: single-pulse E_AS = 150 mJ and repetitive EAR = 3.0 mJ, both tested under defined conditions (V_DD = 50 V, L = 196 mH, I_AS = 1.2 A). These values are measured per JEDEC standards and documented in the official Vishay datasheet (S21-0976-Rev. C). IRFIBF20GPBF's ruggedized die design enables reliable energy absorption without external clamping in flyback and forward converter primary switches.

Can IRFIBF20GPBF be mounted directly to a heatsink without insulating hardware?

Yes, IRFIBF20GPBF's TO-220 FULLPAK package features an electrically isolated metal tab rated for 2.5 kV_RMS isolation (60 s, 60 Hz), allowing direct mechanical attachment to a heatsink using a single M3 screw or clip. This eliminates mica washers or silicone pads while maintaining reinforced insulation - verified per IEC 60747-5-2. IRFIBF20GPBF's molding compound provides both high dielectric strength and low thermal resistance (R_thJC = 4.1 °C/W), improving thermal performance versus insulated standard TO-220.

What is the gate threshold voltage range for IRFIBF20GPBF?

The gate threshold voltage (V_GS(th)) for IRFIBF20GPBF is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers but indicates it is not a logic-level MOSFET - requiring dedicated level-shifting or gate driver ICs when driven from 3.3 V or 5 V microcontrollers. IRFIBF20GPBF's V_GS(th) exhibits positive temperature coefficient, improving current sharing in parallel configurations.

How does the body diode recovery time affect IRFIBF20GPBF's use in flyback converters?

IRFIBF20GPBF's body diode reverse recovery time (t_rr) is 350–530 ns at T_J = 25 °C, IF = 1.7 A, and dI/dt = 100 A/μs. In flyback converters, this parameter directly influences switching loss, EMI generation, and potential cross-conduction during transition. Fast t_rr reduces tail current overlap but demands careful PCB layout to minimize stray inductance - especially critical given IRFIBF20GPBF's 1.5 V/ns peak dV/dt rating. Designers must verify operation across full temperature and load range, as t_rr increases significantly at elevated junction temperatures.