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Vishay Siliconix IRFIBF30G

Part No.:
IRFIBF30G
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
AetrixIRFIBF30G.pdf
Description:
MOSFET N-CH 900V 1.9A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,163

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Product details

Overview

IRFIBF30G from Vishay Siliconix is a 900 V, 1.9 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 3.7 Ω RDS(on) at VGS = 10 V, 78 nC total gate charge, and 2.5 kVRMS isolation rating-designed for high-voltage flyback and offline SMPS primary-side switching.

For engineers reviewing the IRFIBF30G datasheet, IRFIBF30G pinout, IRFIBF30G application, or IRFIBF30G equivalent, key selection criteria include its high-voltage isolation capability, avalanche ruggedness (220 mJ single-pulse), low thermal resistance (RthJC = 3.6 °C/W), and compatibility with standard heatsink mounting via single screw or clip-critical for industrial AC-DC adapters and LED drivers.

Technical Context

This third-generation high-voltage MOSFET uses planar silicon technology optimized for fast switching and robust unclamped inductive switching. Its isolated TO-220 FULLPAK package integrates a high-dielectric molding compound enabling 2.5 kVRMS isolation without external insulation hardware.

The device features a body diode with 430–650 ns reverse recovery time and 1.4–2.1 μC Qrr, supporting quasi-resonant and hard-switched topologies. Gate drive requirements are defined by 10 nC Qgs, 42 nC Qgd, and 14 ns turn-on delay under 450 V/3.6 A test conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS900 V - supports primary-side switching in universal-input offline converters up to 380 V DC bus.
RDS(on)3.7 Ω @ VGS = 10 V - determines conduction loss in continuous conduction mode at rated current.
Qg78 nC - defines gate drive power requirement and switching speed trade-off in high-frequency designs.
EAS220 mJ - enables reliable operation under unclamped inductive load transients without snubber.
RthJC3.6 °C/W - allows direct thermal coupling to heatsink with minimal junction-to-case temperature rise at 35 W dissipation.
VGS(th)2.0–4.0 V - ensures clean turn-on with standard 10 V gate drivers while avoiding spurious activation.
dV/dt Rating1.5 V/ns - sustains high dv/dt during switching transitions without false triggering in noisy high-voltage environments.

Pinout & Package

IRFIBF30G is housed in a TO-220 FULLPAK package with isolated metal tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The molded case provides 4.8 mm creepage distance from sink to lead and replaces mica insulators in commercial-industrial applications.

Pin/TerminalCircuit RoleDesign Meaning
GGateControls channel conduction; requires ≥10 V drive for full enhancement; input capacitance Ciss = 1200 pF.
DDrainHigh-voltage output terminal; internally connected to isolated metal tab; withstands 900 V blocking.
SSourcePower return path and reference for gate drive; body diode anode; carries 1.9 A continuous current.

Key Features

FeatureDesign Value
Isolated package2.5 kVRMS isolation (60 s, 60 Hz) eliminates need for mica washers or insulating pads in heatsink mounting.
High-voltage ruggednessRated for 900 V VDS and 220 mJ single-pulse avalanche energy-enables reliable operation in flyback transformer reset stress.
Low thermal resistanceRthJC = 3.6 °C/W enables efficient heat transfer from die to heatsink without thermal interface material degradation.
Dynamic dV/dt immunity1.5 V/ns rated peak diode recovery dV/dt prevents false turn-on during fast voltage transients in high-side switching.
TO-220 FULLPAK mechanical designSingle-screw or clip mounting simplifies assembly; exposed copper drain tab improves thermal and electrical performance over standard TO-220.

Applications

Industrial AC-DC AdaptersLED Driver Power Stages

Use Scenario: Offline 85–265 VAC input conversion to regulated DC output in factory automation power supplies.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: 900 V rating accommodates line surges and reflected transformer voltages; isolated tab reduces BOM count by eliminating insulator hardware.

Use Scenario: Constant-current LED driver for street lighting with universal AC input and high reliability requirements.

IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback delivering >85% efficiency at 50 kHz.

Use Value: 220 mJ EAS withstands transformer leakage energy spikes; 1.5 V/ns dV/dt rating maintains stability during dimming-induced transients.

Offline SMPS for AppliancesHigh-Voltage DC-DC Converters

Use Scenario: Power supply in refrigerators, washing machines, and HVAC controllers requiring long-term reliability at elevated ambient temperatures.

IC Role / Device Role / Timing Role: Primary-side switch in fixed-frequency flyback operating up to 100 °C case temperature.

Use Value: Derated current of 1.2 A at TC = 100 °C ensures safe operation; -55 to +150 °C junction range supports extended thermal cycling.

Use Scenario: Isolated DC-DC stage converting 400 V DC bus to 24 V for control logic in solar inverters and EV chargers.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving resonant tank with soft switching.

Use Value: Low Coss (320 pF) and Crss (200 pF) reduce switching losses; 430–650 ns trr supports ZVS implementation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP9NK90ZFP900 V, 8.5 A, RDS(on) = 1.4 Ω, TO-220FP package (non-isolated tab), lower Qg (42 nC)Higher current rating but requires external isolation hardware; better for higher-power DCM flybackSelect when higher continuous current and faster switching outweigh isolation convenience.
FQP9N90C900 V, 9 A, RDS(on) = 1.2 Ω, TO-3P package, non-isolated, no specified isolation ratingLarger footprint and higher thermal mass; suited for forced-air-cooled systems with dedicated insulationChoose when board space permits larger package and thermal management includes active cooling.

Compared with STP9NK90ZFP and FQP9N90C, the IRFIBF30G trades lower current and higher RDS(on) for integrated 2.5 kVRMS isolation and simplified mechanical mounting-making it optimal for cost-sensitive, space-constrained industrial adapters where insulation hardware reduction delivers measurable BOM and assembly savings.

Availability

IRFIBF30G is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver power stages, and offline SMPS for appliances requiring stable component supply across extended production lifecycles.

Supply support for IRFIBF30G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFIBF30G belongs to Vishay's high-voltage power MOSFET product line, engineered specifically for ruggedized offline switching in cost-sensitive commercial-industrial power supplies where isolation integration and thermal efficiency are critical.

FAQ

What is the maximum drain-source voltage rating for IRFIBF30G?

The IRFIBF30G has a maximum drain-source voltage (VDS) rating of 900 V. This rating is specified under DC blocking conditions at TJ = 25 °C and ensures safe operation in high-voltage flyback and forward converter primary circuits. It is not intended for repetitive operation above this value, and derating is required at elevated temperatures per the datasheet's SOA curves.

Does IRFIBF30G require external insulation when mounted to a heatsink?

No, the IRFIBF30G does not require external insulation when mounted to a heatsink. Its TO-220 FULLPAK package incorporates a high-dielectric molding compound that provides 2.5 kVRMS isolation between the drain-connected tab and leads, eliminating the need for mica washers or silicone pads in most commercial-industrial applications.

What is the gate threshold voltage range for IRFIBF30G?

The gate-source threshold voltage (VGS(th)) for IRFIBF30G is specified from 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage currents below 2 V.

Can IRFIBF30G be used in avalanche-mode operation?

Yes, the IRFIBF30G is rated for repetitive avalanche operation with IAR = 1.9 A and EAR = 3.5 mJ, and single-pulse avalanche energy of 220 mJ. These ratings are validated per JEDEC standards and support robust operation in unclamped inductive switching events common in flyback transformer reset cycles.

What is the thermal resistance from junction to case for IRFIBF30G?

The maximum junction-to-case thermal resistance (RthJC) for IRFIBF30G is 3.6 °C/W. This value reflects the thermal path from the silicon die to the drain-connected metal tab and is measured under standardized cold-plate conditions-enabling accurate junction temperature estimation when paired with heatsink thermal resistance data.

IRFIBF30G Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
78 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

IRFIBF30G FAQ

1.How can I place an order for IRFIBF30G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIBF30G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIBF30G reliable?

The price and inventory of IRFIBF30G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIBF30G is usually 5 days.

3.What payment methods are accepted for IRFIBF30G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIBF30G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIBF30G?

IRFIBF30G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIBF30G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIBF30G?

For technical support, including IRFIBF30G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIBF30G requirements.

6.How does Aetrix verify that IRFIBF30G is sourced from the original manufacturer or authorized distributors?

All IRFIBF30G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIBF30G meets industry standards.

7.What is the process for return or replacement of IRFIBF30G?

All IRFIBF30G units undergo pre-shipment inspection (PSI). If there is an issue with IRFIBF30G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIBF30G part is unused and in its original packaging.

Return procedure for IRFIBF30G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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