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Vishay Siliconix IRFIZ14GPBF
- Part No.:
- IRFIZ14GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFIZ14GPBF.pdf
- Description:
- MOSFET N-CH 60V 8A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:758
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Product details
Overview
IRFIZ14GPBF from Vishay Siliconix is a 60 V, 8.0 A N-channel power MOSFET in TO-220 FULLPAK package, featuring 0.20 Ω RDS(on) at VGS = 10 V, 2.5 kVRMS isolation, and 175 °C maximum junction temperature. It serves as a high-voltage isolated switch in DC-DC converters, motor drives, and industrial power supplies where creepage distance ≥4.8 mm and thermal robustness are critical.
For engineers reviewing the IRFIZ14GPBF datasheet, IRFIZ14GPBF pinout, IRFIZ14GPBF application, or IRFIZ14GPBF equivalent, this device is selected for high-reliability commercial-industrial switching where galvanic isolation, avalanche energy rating (47 mJ), and low thermal resistance (RthJC = 5.5 °C/W) directly impact system safety and heatsink sizing.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve ruggedized dv/dt immunity (4.5 V/ns) and fast switching with 11 nC total gate charge. Its isolated TO-220 FULLPAK construction eliminates external insulation hardware by integrating 2.5 kVRMS isolation between drain and tab.
The device integrates a body diode with 70–140 ns reverse recovery time and 0.20–0.40 μC Qrr, enabling unclamped inductive switching up to 32 A pulsed drain current. Thermal design is supported by low RthJC (5.5 °C/W) and linear derating (0.18 W/°C above 25 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage defines use in ≤48 V bus systems with margin for transients. |
| RDS(on) | 0.20 Ω @ VGS = 10 V - Determines conduction loss (I²R) in continuous 8.0 A operation at TC = 25 °C. |
| Qg | 11 nC - Gate drive energy requirement impacts driver selection and switching loss at high frequency. |
| EAS | 47 mJ - Single-pulse avalanche capability enables reliable operation under inductive load turn-off stress. |
| RthJC | 5.5 °C/W - Enables direct heatsink mounting with predictable junction-to-case thermal drop under full power. |
| VGS(th) | 2.0–4.0 V - Threshold range confirms standard-level gate drive compatibility (10 V logic), not logic-level. |
| dV/dt | 4.5 V/ns - High peak diode recovery dv/dt rating supports stable commutation in noisy power stages. |
Pinout & Package
IRFIZ14GPBF is housed in a TO-220 FULLPAK package with isolated drain tab, providing 2.5 kVRMS isolation and 4.8 mm sink-to-lead creepage. The molded compound replaces mica insulation, allowing single-screw heatsink mounting without insulating washers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V gate drive to fully enhance channel; threshold 2.0–4.0 V ensures noise immunity in industrial environments. |
| D (Drain) | High-side power terminal | Connected to isolated heatsink tab; carries full load current and withstands 60 V blocking with 47 mJ avalanche rating. |
| S (Source) | Power return / reference node | Provides low-impedance return path; internal source inductance (LS = 7.5 nH) affects high-speed switching ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | Eliminates need for mica insulators and shoulder washers-reduces BOM count and assembly steps in commercial-industrial designs. |
| 2.5 kVRMS isolation | Enables safe operation across reinforced insulation barriers per IEC 60950/62368, reducing system-level safety certification effort. |
| 175 °C operating temperature | Supports extended lifetime in sealed enclosures or high-ambient environments without derating below 100 °C case temperature. |
| Low RthJC (5.5 °C/W) | Permits compact heatsink design with ≤27 W dissipation at TC = 25 °C, improving power density in space-constrained applications. |
| Dynamic dv/dt rating (4.5 V/ns) | Ensures reliable turn-off under fast voltage transients in motor drives and SMPS, preventing false triggering during commutation. |
Applications
| Industrial Motor Drives | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Half-bridge switching in 24–48 V BLDC motor controllers for HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlling phase current; operates at 20–50 kHz with unclamped inductive turn-off. Use Value: 47 mJ EAS and 4.5 V/ns dv/dt rating prevent failure during back-EMF spikes; isolated tab simplifies heatsinking on shared metal chassis. |
Use Scenario: Primary-side switch in non-isolated buck or flyback converters powering PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch handling 8 A continuous current; driven by PWM controller with 11 nC Qg demand. Use Value: 0.20 Ω RDS(on) minimizes conduction loss at full load; TO-220 FULLPAK isolation avoids secondary-side creepage violations in compact PCB layouts. |
| AC-DC Auxiliary Power Supply | Industrial Solenoid Driver |
Use Scenario: Standby power supply in industrial UPS units requiring high reliability and wide ambient temperature range. IC Role / Device Role / Timing Role: Switching transistor in 60 kHz flyback converter delivering 5–12 V bias rails; subjected to line surges and thermal cycling. Use Value: 175 °C TJ rating ensures >10-year life at 70 °C ambient; 2.5 kVRMS isolation meets reinforced insulation requirements for SELV outputs. |
Use Scenario: High-current solenoid actuator control in automated valve systems exposed to vibration and dust. IC Role / Device Role / Timing Role: Low-side switch driving 24 V/5 A solenoids with fast turn-on/turn-off (10 ns td(on), 19 ns tf). Use Value: 32 A pulsed drain current handles inrush; integrated body diode with 1.6 V VSD clamps inductive kickback without external freewheeling diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | 60 V, 60 A, RDS(on) = 0.018 Ω, TO-220 non-isolated, no rated isolation voltage | Higher current capacity but requires external insulation hardware and larger heatsink due to higher PD at same RDS(on) | Choose when peak current >32 A is required and board layout allows added insulation components. |
| IXTP10N60P | 600 V, 10 A, RDS(on) = 0.75 Ω, TO-220 isolated, 2.5 kVRMS isolation, slower switching (Qg = 27 nC) | Higher voltage rating trades off conduction loss and switching speed; suited for 400 V bus systems | Choose for 380–480 V AC-input auxiliary supplies where IRFIZ14GPBF's 60 V rating is insufficient. |
Compared with STP60NF06 and IXTP10N60P, the IRFIZ14GPBF uniquely balances 60 V rating, 2.5 kVRMS isolation, and 11 nC gate charge-making it optimal for space-constrained 24–48 V industrial power stages needing certified creepage without added BOM cost.
Availability
IRFIZ14GPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and solenoid drivers requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.
Supply support for IRFIZ14GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.
The IRFIZ14GPBF belongs to Vishay's high-voltage isolated MOSFET family designed specifically for commercial-industrial power conversion where safety isolation, thermal resilience, and reduced assembly complexity are primary design constraints.
FAQ
What is the maximum continuous drain current for IRFIZ14GPBF at 100 °C case temperature?
The IRFIZ14GPBF supports 5.7 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and must be verified against actual heatsink performance and ambient conditions in the final design. The IRFIZ14GPBF maintains 0.20 Ω RDS(on) only at VGS = 10 V and TJ = 25 °C; resistance increases with temperature.
Does IRFIZ14GPBF require external insulation when mounted to a heatsink?
No, the IRFIZ14GPBF does not require external insulation when mounted to a heatsink because its TO-220 FULLPAK package provides built-in 2.5 kVRMS isolation between the drain tab and leads. The molding compound achieves isolation equivalent to a 100 µm mica barrier, enabling direct screw or clip mounting without washers or insulators-reducing assembly cost and improving thermal contact.
What is the body diode forward voltage of IRFIZ14GPBF at 8.0 A and 25 °C?
The body diode forward voltage (VSD) of the IRFIZ14GPBF is 1.6 V at TJ = 25 °C and IS = 8.0 A with VGS = 0 V, as measured per the device's specifications. This value is critical for freewheeling operation in synchronous rectification or inductive load driving, and it increases with junction temperature-reaching ~2.0 V at 175 °C.
Can IRFIZ14GPBF be used in avalanche-rated circuits?
Yes, the IRFIZ14GPBF is rated for single-pulse avalanche energy (EAS) of 47 mJ under defined test conditions (VDD = 25 V, L = 1.47 mH, IAS = 8.0 A). This capability allows controlled energy absorption during inductive turn-off events, making the IRFIZ14GPBF suitable for unclamped inductive switching in motor drives and relay drivers where snubberless operation is desired.
What is the gate-source leakage current specification for IRFIZ14GPBF?
The gate-source leakage current (IGSS) of the IRFIZ14GPBF is ±100 nA maximum at VGS = ±20 V and TJ = 25 °C, per its DC specifications. This low leakage ensures stable gate bias in high-impedance drive circuits and contributes to reliable turn-off behavior in industrial environments with elevated temperature and humidity.
IRFIZ14GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFIZ14GPBF FAQ
1.How can I place an order for IRFIZ14GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFIZ14GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFIZ14GPBF reliable?
The price and inventory of IRFIZ14GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ14GPBF is usually 5 days.
3.What payment methods are accepted for IRFIZ14GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ14GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFIZ14GPBF?
IRFIZ14GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFIZ14GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFIZ14GPBF?
For technical support, including IRFIZ14GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ14GPBF requirements.
6.How does Aetrix verify that IRFIZ14GPBF is sourced from the original manufacturer or authorized distributors?
All IRFIZ14GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ14GPBF meets industry standards.
7.What is the process for return or replacement of IRFIZ14GPBF?
All IRFIZ14GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ14GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFIZ14GPBF part is unused and in its original packaging.
Return procedure for IRFIZ14GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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