Vishay Siliconix IRFIZ24G

Overview

IRFIZ24G from Vishay Siliconix is a 60 V, 14 A N-channel power MOSFET in TO-220 FULLPAK package with 0.10 Ω R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and 2.5 kV_RMS isolation-designed for high-voltage industrial switching, DC-DC converters, and motor control where thermal robustness and creepage safety are critical.

For engineers reviewing the IRFIZ24G datasheet, IRFIZ24G pinout, IRFIZ24G application, or IRFIZ24G equivalent, this part supports high-reliability commercial-industrial systems requiring 175 °C operation, fast switching (13 ns turn-on delay), low thermal resistance (4.1 °C/W junction-to-case), and integrated body diode recovery performance (90–180 ns trr).

Technical Context

The IRFIZ24G employs a third-generation silicon process optimized for ruggedized switching and low conduction loss. Its isolated TO-220 FULLPAK construction eliminates external insulation hardware by integrating 4.8 mm sink-to-lead creepage and 2.5 kV_RMS isolation-equivalent to a 100 µm mica barrier in standard TO-220.

It delivers dynamic dV/dt immunity up to 4.5 V/ns and supports unclamped inductive switching with 100 mJ single-pulse avalanche energy. The device features low internal inductance (L_D = 4.5 nH, L_S = 7.5 nH) and a body diode rated for 14 A continuous source-drain current and 56 A pulsed forward current.

Key Specifications

Pinout & Package

IRFIZ24G uses the TO-220 FULLPAK package: isolated plastic housing with metal tab (drain-connected), 3-lead vertical configuration, and standardized 2.54 mm lead pitch. Mounting requires only one M3 screw or clip-no additional insulation needed due to 2.5 kV_RMS isolation and 4.8 mm creepage.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IXTP12N60P, the IRFIZ24G uniquely combines 60 V rating, 0.10 Ω on-resistance, and certified 2.5 kV_RMS isolation in a single-screw-mount TO-220 FULLPAK-making it optimal for space-constrained, safety-critical 48 V industrial systems where insulation integration reduces design risk and assembly cost.

Availability

IRFIZ24G is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for IRFIZ24G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFIZ24G belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching, fast transition times, and cost-effective thermal management in commercial-industrial power conversion.

FAQ

What is the maximum continuous drain current rating for the IRFIZ24G at 100 °C case temperature?

The IRFIZ24G supports 10 A continuous drain current at T_C = 100 °C, derated linearly from 14 A at 25 °C using a 0.24 W/°C factor. This rating reflects real-world thermal limits in enclosed industrial enclosures where heatsink temperature rises above ambient. The IRFIZ24G maintains safe operation up to 175 °C junction temperature, enabling robust performance even under transient overload conditions.

Does the IRFIZ24G require external insulation when mounted to a heatsink?

No-the IRFIZ24G's TO-220 FULLPAK package provides 2.5 kV_RMS isolation and 4.8 mm sink-to-lead creepage, eliminating the need for mica washers or insulating pads. The metal tab is internally connected to the drain, and the molding compound achieves isolation equivalent to a 100 µm mica barrier. This allows direct screw-mounting to grounded heatsinks in systems where drain potential is referenced to chassis ground-reducing assembly complexity and thermal interface resistance.

What is the body diode reverse recovery time (trr) specification for the IRFIZ24G?

The IRFIZ24G body diode exhibits a reverse recovery time (t_rr) of 90–180 ns under test conditions of T_J = 25 °C, I_F = 17 A, and dI/dt = 100 A/µs. This parameter directly impacts switching losses and EMI in freewheeling and synchronous rectification applications. The corresponding Q_rr is 0.32–0.64 µC. These values are measured and guaranteed per the datasheet, confirming suitability for medium-frequency (<500 kHz) hard-switched topologies.

Can the IRFIZ24G be driven directly by a 5 V microcontroller GPIO pin?

No-the IRFIZ24G has a gate threshold voltage (V_GS(th)) of 2.0–4.0 V but requires 10 V gate drive to achieve its specified 0.10 Ω R_DS(on). A 5 V GPIO cannot fully enhance the channel, resulting in significantly higher conduction loss and thermal stress. Driving the IRFIZ24G reliably requires a dedicated gate driver or level-shifting circuit capable of sourcing ≥10 V with sufficient peak current to charge its 25 nC gate capacitance within required switching timing constraints.

What is the avalanche energy rating of the IRFIZ24G, and how is it tested?

The IRFIZ24G is rated for 100 mJ single-pulse avalanche energy (E_AS) under conditions of V_DD = 25 V, starting T_J = 25 °C, L = 595 µH, R_G = 25 Ω, and I_AS = 14 A. This rating is verified per JEDEC JESD24-11 using unclamped inductive switching (UIS) testing. It quantifies the device's ability to absorb inductive energy safely during overcurrent events without destructive failure-critical for motor drive and relay-driving applications where load inductance dominates fault behavior.