Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIZ34G

Name: IRFIZ34G
Brand: Vishay Siliconix
SKU: IRFIZ34G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFIZ34G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIZ34G.pdf

Description:: MOSFET N-CH 60V 20A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,682

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFIZ34G from Vishay Siliconix is a 60 V, 20 A N-channel power MOSFET in TO-220 FULLPAK package with 0.050 Ω R_DS(on) at V_GS = 10 V, 2.5 kV_RMS isolation rating, and 175 °C maximum junction temperature-designed for high-reliability DC-DC converters, motor drivers, and industrial power switches.

For engineers reviewing the IRFIZ34G datasheet, IRFIZ34G pinout, IRFIZ34G application, or IRFIZ34G equivalent, this device's isolated TO-220 FULLPAK construction, avalanche energy rating (300 mJ), and low thermal resistance (3.6 °C/W junction-to-case) are critical for heatsink-integrated switching designs requiring creepage >4.8 mm and robust dV/dt immunity (5.0 V/ns).

Technical Context

The IRFIZ34G employs a third-generation silicon process optimized for fast switching and rugged unclamped inductive switching, with dynamic dV/dt capability and integrated body diode characterized for trr = 120–230 ns and Qrr = 0.70–1.4 μC. Its gate charge profile (Qg = 46 nC, Qgd = 22 nC) supports efficient hard-switching up to 100 kHz in medium-power topologies.

Thermally, the TO-220 FULLPAK package delivers 3.6 °C/W R_thJC, enabling direct mounting to heatsinks via single screw or clip without mica insulators-leveraging molding compound isolation equivalent to 100 μm mica while maintaining low thermal impedance between tab and external heatsink.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V bus-level switching applications
R_DS(on)	0.050 Ω @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 12 A continuous drain current
Q_g	46 nC - Gate drive energy requirement determines minimum driver peak current (e.g., ≥3.8 A for 12 ns turn-on delay)
E_AS	300 mJ - Supports reliable unclamped inductive switching in motor control or relay driving without snubbers
dV/dt	5.0 V/ns - Immune to false triggering during fast transient noise in industrial environments
T_J max	+175 °C - Allows operation in sealed enclosures or high-ambient thermal environments without derating
R_thJC	3.6 °C/W - Enables compact heatsink design with ≤15 °C rise at 42 W dissipation

Pinout & Package

IRFIZ34G uses the TO-220 FULLPAK package: isolated plastic housing with integral metal tab (drain-connected), 3-pin through-hole configuration, 4.8 mm sink-to-lead creepage, and 2.5 kV_RMS isolation rated for 60 s at 60 Hz.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold 2.0–4.0 V; ±100 nA leakage ensures low standby power
D (Drain)	High-side switch node	Connected to internal tab; electrically isolated from mounting surface; handles full 60 V blocking and 80 A pulsed current
S (Source)	Power return / reference	Common return path for load current; body diode anode; referenced to PCB ground plane

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates need for mica washers or insulating pads-reduces assembly steps and thermal interface resistance
2.5 kV_RMS isolation	Validated for 60 s at 60 Hz-meets reinforced insulation requirements in AC/DC auxiliary supplies and isolated gate drives
175 °C operating temperature	Enables use in sealed industrial controllers where ambient exceeds 85 °C without forced air cooling
Low R_thJC (3.6 °C/W)	Permits direct screw-mount heatsinking with <15 °C temperature rise at full 42 W power dissipation
Dynamic dV/dt rating	5.0 V/ns immunity prevents spurious turn-on during fast voltage transients in motor drive half-bridges

Applications

Industrial Motor Control	DC-DC Converter Primary Switch
Use Scenario: Driving 24–48 V brushed DC motors in factory automation actuators with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side N-channel power switch controlling motor phase current; body diode handles freewheeling during PWM off-time. Use Value: 300 mJ avalanche energy rating absorbs inductive kickback without external clamping; 0.050 Ω R_DS(on) limits I²R losses to <1.5 W at 12 A.	Use Scenario: Primary-side switch in 30–50 W isolated flyback or forward converters powering PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer primary winding; requires high dV/dt immunity during reset transitions. Use Value: 5.0 V/ns dV/dt rating prevents false triggering during transformer reset; 2.5 kV_RMS isolation enables safe primary-to-secondary barrier compliance.
AC/DC Auxiliary Supply	High-Voltage Relay Driver
Use Scenario: 12 V auxiliary supply in industrial UPS systems deriving power from 380 V DC bus using flyback topology. IC Role / Device Role / Timing Role: Primary switch handling 60 V blocking with tight duty cycle control; operates at 65–100 kHz switching frequency. Use Value: 46 nC total gate charge enables efficient drive with standard 1 A gate drivers; 175 °C T_J rating sustains reliability under sustained overload conditions.	Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels switching 24–48 V DC loads. IC Role / Device Role / Timing Role: Low-loss, fast-turn-off switch replacing mechanical contacts; body diode provides reverse polarity protection. Use Value: 80 A pulsed drain current (I_DM) supports high inrush currents of solenoid valves; TO-220 FULLPAK isolation eliminates need for separate relay base insulation.

Industrial Motor Control

DC-DC Converter Primary Switch

Use Scenario: Driving 24–48 V brushed DC motors in factory automation actuators with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side N-channel power switch controlling motor phase current; body diode handles freewheeling during PWM off-time.

Use Value: 300 mJ avalanche energy rating absorbs inductive kickback without external clamping; 0.050 Ω R_DS(on) limits I²R losses to <1.5 W at 12 A.

Use Scenario: Primary-side switch in 30–50 W isolated flyback or forward converters powering PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer primary winding; requires high dV/dt immunity during reset transitions.

Use Value: 5.0 V/ns dV/dt rating prevents false triggering during transformer reset; 2.5 kV_RMS isolation enables safe primary-to-secondary barrier compliance.

AC/DC Auxiliary Supply

High-Voltage Relay Driver

Use Scenario: 12 V auxiliary supply in industrial UPS systems deriving power from 380 V DC bus using flyback topology.

IC Role / Device Role / Timing Role: Primary switch handling 60 V blocking with tight duty cycle control; operates at 65–100 kHz switching frequency.

Use Value: 46 nC total gate charge enables efficient drive with standard 1 A gate drivers; 175 °C T_J rating sustains reliability under sustained overload conditions.

Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels switching 24–48 V DC loads.

IC Role / Device Role / Timing Role: Low-loss, fast-turn-off switch replacing mechanical contacts; body diode provides reverse polarity protection.

Use Value: 80 A pulsed drain current (I_DM) supports high inrush currents of solenoid valves; TO-220 FULLPAK isolation eliminates need for separate relay base insulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	60 V, 60 A, R_DS(on) = 0.018 Ω, TO-220 non-isolated, no isolation rating	Lacks 2.5 kV_RMS isolation and creepage distance; requires external insulator for heatsink mounting	Select when higher current and lower R_DS(on) are prioritized over isolation and board space savings
IXTP30N06T	60 V, 30 A, R_DS(on) = 0.022 Ω, TO-220 isolated, 2.5 kV_RMS, but 150 °C T_J max	Lower max junction temperature limits sustained power in thermally constrained enclosures	Select when higher current capability is needed and thermal margin allows 150 °C limit

Compared with STP60NF06 and IXTP30N06T, the IRFIZ34G uniquely balances 20 A current, 0.050 Ω on-resistance, 2.5 kV_RMS isolation, and 175 °C operation-making it optimal for space-constrained industrial power stages where safety isolation and thermal headroom are co-prioritized.

Availability

IRFIZ34G is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter primary switching, and high-voltage relay driving requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFIZ34G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFIZ34G belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching in commercial-industrial power conversion-emphasizing isolation integrity, thermal robustness, and unclamped inductive survivability.

FAQ

What is the maximum continuous drain current for IRFIZ34G at 100 °C case temperature?

The IRFIZ34G supports 14 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be validated against actual heatsink performance and ambient conditions in the final design. The IRFIZ34G datasheet specifies linear derating above 25 °C at 0.28 W/°C.

Does IRFIZ34G require a heatsink for operation at full 20 A continuous current?

Yes-the IRFIZ34G requires a heatsink to sustain 20 A continuous current at TC = 25 °C. With R_thJC = 3.6 °C/W and P_D = 42 W max, even minimal ambient rise necessitates active or substantial passive heatsinking. The IRFIZ34G's isolated tab allows direct mounting without insulators, reducing thermal resistance by ~1.2 °C/W versus standard TO-220 with mica.

What is the body diode reverse recovery time (trr) specification for IRFIZ34G?

The IRFIZ34G body diode has a typical reverse recovery time (trr) of 120 ns and maximum of 230 ns at TJ = 25 °C, IF = 30 A, and dI/dt = 100 A/μs. This value is critical for synchronous rectification and freewheeling paths in hard-switched topologies. The IRFIZ34G's Qrr of 0.70–1.4 μC further defines stored charge behavior during recovery.

Can IRFIZ34G be used as a direct replacement for IRFZ34N in existing designs?

No-IRFIZ34G is not a drop-in replacement for IRFZ34N. While both are 60 V N-channel MOSFETs in TO-220 packages, the IRFIZ34G features FULLPAK isolation (2.5 kV_RMS, 4.8 mm creepage), whereas IRFZ34N is non-isolated. Mounting, thermal interface, and safety certification would require redesign. The IRFIZ34G also has higher Qg (46 nC vs. ~35 nC) and different SOA characteristics.

What is the gate-source voltage rating for IRFIZ34G, and what happens if exceeded?

The IRFIZ34G has a gate-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage, leading to increased IGSS leakage or catastrophic failure. Transient overshoots must be clamped-especially in high-dV/dt environments-using Zener diodes or gate resistors. The IRFIZ34G's ±100 nA IGSS at ±20 V confirms gate integrity within spec, but stress beyond ±20 V voids reliability guarantees.

IRFIZ34G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIZ34G FAQ

1.How can I place an order for IRFIZ34G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIZ34G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIZ34G reliable?

The price and inventory of IRFIZ34G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ34G is usually 5 days.

3.What payment methods are accepted for IRFIZ34G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ34G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIZ34G?

IRFIZ34G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIZ34G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIZ34G?

For technical support, including IRFIZ34G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ34G requirements.

6.How does Aetrix verify that IRFIZ34G is sourced from the original manufacturer or authorized distributors?

All IRFIZ34G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ34G meets industry standards.

7.What is the process for return or replacement of IRFIZ34G?

All IRFIZ34G units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ34G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIZ34G part is unused and in its original packaging.

Return procedure for IRFIZ34G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …