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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIZ34GPBF

Name: IRFIZ34GPBF
Brand: Vishay Siliconix
SKU: IRFIZ34GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIZ34GPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIZ34GPBF.pdf

Description:: MOSFET N-CH 60V 20A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFIZ34GPBF from Vishay Siliconix is a 60 V, 20 A N-channel power MOSFET in TO-220 FULLPAK package, featuring 2.5 kVRMS isolation, 0.050 Ω R_DS(on) at V_GS = 10 V, and 175 °C maximum junction temperature. It serves as a high-reliability switching element in DC-DC converters, motor drives, and industrial power supplies where galvanic isolation and thermal robustness are critical.

For engineers reviewing the IRFIZ34GPBF datasheet, IRFIZ34GPBF pinout, IRFIZ34GPBF application, or IRFIZ34GPBF equivalent, key selection criteria include its isolated TO-220 FULLPAK construction, 3.6 °C/W junction-to-case thermal resistance, avalanche energy rating of 300 mJ, and compatibility with standard heatsink mounting via single screw or clip-enabling simplified thermal design in space-constrained industrial systems.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for fast switching and ruggedized operation. Its isolated TO-220 FULLPAK package integrates a high-dielectric molding compound that replaces external insulation hardware, delivering 2.5 kVRMS isolation and 4.8 mm sink-to-lead creepage distance without mica washers.

The IRFIZ34GPBF supports high dV/dt immunity (5.0 V/ns) and features low gate charge (Q_g = 46 nC), enabling efficient gate drive in hard-switched topologies. Its body diode exhibits t_rr = 120–230 ns and Q_rr = 0.70–1.4 μC, making it suitable for synchronous rectification and inductive load switching where reverse recovery behavior impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V bus and offline auxiliary supply applications.
R_DS(on)	0.050 Ω @ V_GS = 10 V - Low conduction loss enables ≤1.2 W I²R dissipation at 12 A continuous current, reducing heatsink requirements.
Q_g	46 nC - Total gate charge determines gate driver power and switching speed; compatible with standard 1-A peak drivers at ≤100 kHz.
T_J(max)	+175 °C - Extended junction temperature rating allows operation in sealed enclosures or high-ambient environments without derating.
E_AS	300 mJ - Single-pulse avalanche energy rating supports unclamped inductive switching in relay drivers and solenoid controls.
R_thJC	3.6 °C/W - Low junction-to-case thermal resistance enables direct heatsink coupling and simplifies thermal interface design.
dV/dt	5.0 V/ns - High peak diode recovery dV/dt capability prevents false turn-on during fast commutation in half-bridge configurations.

Pinout & Package

IRFIZ34GPBF uses the TO-220 FULLPAK package: an isolated variant of TO-220 with integrated high-dielectric molding compound, 4.8 mm minimum creepage, and metal tab electrically isolated from drain. Mounting requires only one M3 screw or clip-no additional insulator needed.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heatsink interface	Electrically isolated metal tab serves as both drain terminal and thermal interface; rated for 2.5 kVRMS isolation from leads.
Source	Reference node for gate control and current return	Internal connection to substrate; forms common reference for gate drive and load current return path.
Gate	Control input for channel conduction	High-impedance MOS control terminal; requires 2.0–4.0 V threshold and ≤100 nA leakage at ±20 V bias.

Key Features

Feature	Design Value
Galvanic isolation	2.5 kVRMS (60 s, 60 Hz) eliminates need for mica insulators or isolation pads in commercial-industrial mounting.
Thermal performance	3.6 °C/W R_thJC enables >42 W power dissipation with modest heatsinking-critical for compact power modules.
Avalanche ruggedness	300 mJ single-pulse E_AS ensures reliable operation under inductive switching stress without external snubbers.
High-temperature operation	Rated for continuous operation up to +175 °C junction temperature-supports designs in automotive engine compartments or sealed industrial cabinets.
Fast body diode	120–230 ns reverse recovery time with low Q_rr (0.70–1.4 μC) reduces switching losses in freewheeling paths.

Applications

DC-DC Converter Primary Switch	Motor Drive Half-Bridge Leg
Use Scenario: Step-down conversion in 48 V telecom or industrial power supplies with forced-air or passive heatsinking. IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer into output inductor; operates at 50–200 kHz. Use Value: Low R_DS(on) (0.050 Ω) minimizes conduction loss; isolated tab simplifies heatsink integration without insulation hardware.	Use Scenario: Driving brushed DC motors or stepper phase windings in factory automation controllers. IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles bidirectional current during PWM commutation. Use Value: 175 °C T_J(max) sustains operation under stall conditions; 5.0 V/ns dV/dt rating prevents shoot-through during fast transitions.
Solenoid/Relay Driver	UPS Inverter Output Stage
Use Scenario: Controlling high-current AC/DC solenoids in HVAC actuators or industrial valves. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy during turn-off via avalanche breakdown. Use Value: 300 mJ E_AS rating eliminates need for external clamping diodes or RC snubbers in cost-sensitive designs.	Use Scenario: Output stage in line-interactive UPS inverters delivering 230 VAC from 48 VDC battery bank. IC Role / Device Role / Timing Role: Synchronous rectifier and switching device in full-bridge or push-pull configuration. Use Value: Fast body diode (t_rr = 120–230 ns) reduces reverse recovery loss; TO-220 FULLPAK isolation enhances safety in grounded-output systems.

DC-DC Converter Primary Switch

Motor Drive Half-Bridge Leg

Use Scenario: Step-down conversion in 48 V telecom or industrial power supplies with forced-air or passive heatsinking.

IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer into output inductor; operates at 50–200 kHz.

Use Value: Low R_DS(on) (0.050 Ω) minimizes conduction loss; isolated tab simplifies heatsink integration without insulation hardware.

Use Scenario: Driving brushed DC motors or stepper phase windings in factory automation controllers.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles bidirectional current during PWM commutation.

Use Value: 175 °C T_J(max) sustains operation under stall conditions; 5.0 V/ns dV/dt rating prevents shoot-through during fast transitions.

Solenoid/Relay Driver

UPS Inverter Output Stage

Use Scenario: Controlling high-current AC/DC solenoids in HVAC actuators or industrial valves.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy during turn-off via avalanche breakdown.

Use Value: 300 mJ E_AS rating eliminates need for external clamping diodes or RC snubbers in cost-sensitive designs.

Use Scenario: Output stage in line-interactive UPS inverters delivering 230 VAC from 48 VDC battery bank.

IC Role / Device Role / Timing Role: Synchronous rectifier and switching device in full-bridge or push-pull configuration.

Use Value: Fast body diode (t_rr = 120–230 ns) reduces reverse recovery loss; TO-220 FULLPAK isolation enhances safety in grounded-output systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	60 V, 60 A, R_DS(on) = 0.018 Ω, non-isolated TO-220, higher current rating but no isolation.	Requires external insulation hardware for heatsink mounting; better for high-current, non-isolated PCB layouts.	Select STP60NF06 when higher current capacity is needed and isolation can be implemented externally.
IXTP30N10D2	100 V, 30 A, R_DS(on) = 0.032 Ω, TO-220, no isolation, enhanced body diode softness.	Higher voltage margin suits 90 V input stages; lacks galvanic isolation, limiting use in safety-critical mounting.	Choose IXTP30N10D2 for 100 V systems requiring softer diode recovery, but verify insulation separately.

Compared with STP60NF06 and IXTP30N10D2, the IRFIZ34GPBF uniquely delivers certified 2.5 kVRMS isolation in a standard TO-220 footprint-reducing BOM count and assembly steps where regulatory creepage or operator safety mandates reinforced insulation.

Availability

IRFIZ34GPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and solenoid control systems requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for IRFIZ34GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFIZ34GPBF belongs to Vishay's high-voltage isolated MOSFET product line, engineered for industrial power switching where galvanic isolation, thermal resilience, and avalanche tolerance are mandatory-not optional.

FAQ

What is the maximum continuous drain current for IRFIZ34GPBF at 100 °C case temperature?

The IRFIZ34GPBF supports 14 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its 3.6 °C/W R_thJC and 175 °C T_J(max). At 25 °C case temperature, the rating rises to 20 A. Designers must verify actual case temperature under load to ensure safe operation of the IRFIZ34GPBF.

Does IRFIZ34GPBF require external insulation when mounted to a heatsink?

No, the IRFIZ34GPBF does not require external insulation when mounted to a heatsink. Its TO-220 FULLPAK package provides 2.5 kVRMS isolation between the drain tab and leads, eliminating the need for mica washers or silicone pads. This feature is confirmed in the product description and absolute maximum ratings section of the IRFIZ34GPBF datasheet.

What is the gate-source threshold voltage range for IRFIZ34GPBF?

The gate-source threshold voltage (V_GS(th)) for IRFIZ34GPBF is specified as 2.0 V to 4.0 V at T_J = 25 °C, with V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity. The IRFIZ34GPBF is not a logic-level MOSFET; gate drive must exceed 4 V to guarantee full enhancement.

Can IRFIZ34GPBF be used in avalanche mode repeatedly?

The IRFIZ34GPBF is rated for single-pulse avalanche energy (E_AS) of 300 mJ, but repetitive avalanche operation is not characterized or guaranteed. The datasheet specifies E_AS as a non-repetitive rating (note "a" in Absolute Maximum Ratings). For circuits subject to repeated inductive switching stress, designers should implement clamping or snubbing and verify thermal limits-relying solely on IRFIZ34GPBF's avalanche capability is not recommended.

What is the drain-source capacitance (C_oss) of IRFIZ34GPBF at 25 V?

The drain-source capacitance (C_oss) of IRFIZ34GPBF is 600 pF at V_DS = 25 V, f = 1.0 MHz, as specified in the Dynamic Characteristics table. This value directly influences hard-switching losses and resonant behavior in flyback or LLC topologies. C_oss decreases with increasing V_DS, and designers should consult Figure 5 (Capacitance vs. V_DS) in the IRFIZ34GPBF datasheet for full voltage dependence.

IRFIZ34GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIZ34GPBF FAQ

1.How can I place an order for IRFIZ34GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIZ34GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIZ34GPBF reliable?

The price and inventory of IRFIZ34GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ34GPBF is usually 5 days.

3.What payment methods are accepted for IRFIZ34GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ34GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIZ34GPBF?

IRFIZ34GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIZ34GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIZ34GPBF?

For technical support, including IRFIZ34GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ34GPBF requirements.

6.How does Aetrix verify that IRFIZ34GPBF is sourced from the original manufacturer or authorized distributors?

All IRFIZ34GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ34GPBF meets industry standards.

7.What is the process for return or replacement of IRFIZ34GPBF?

All IRFIZ34GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ34GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIZ34GPBF part is unused and in its original packaging.

Return procedure for IRFIZ34GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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