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Vishay Siliconix IRFIZ44GPBF
- Part No.:
- IRFIZ44GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFIZ44GPBF.pdf
- Description:
- MOSFET N-CH 60V 30A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,547
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Product details
Overview
IRFIZ44GPbF from Vishay Siliconix is a 60 V, 30 A N-channel power MOSFET in TO-220 FULLPAK package, featuring 2.5 kVRMS isolation, 0.028 Ω RDS(on) at VGS = 10 V, and 175 °C maximum junction temperature-designed for high-reliability DC-DC converters, motor drives, and industrial power switching where thermal robustness and creepage safety are critical.
For engineers reviewing the IRFIZ44GPbF datasheet, IRFIZ44GPbF pinout, IRFIZ44GPbF application, or IRFIZ44GPbF equivalent, this device's isolated TO-220 FULLPAK construction, 95 nC total gate charge, avalanche-rated operation (100 mJ), and 4.8 mm sink-to-lead creepage distance are key selection criteria for insulated high-voltage switching designs.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve low RDS(on) while maintaining rugged unclamped inductive switching capability. Its dynamic dV/dt rating of 4.5 V/ns and body diode trr of 140–300 ns support fast, controlled turn-off in hard-switched topologies.
The TO-220 FULLPAK package integrates high-isolation molding compound (equivalent to 100 µm mica) directly over the drain tab, enabling direct heatsink mounting without insulating hardware-reducing thermal resistance to 3.1 °C/W (junction-to-case) and supporting continuous 30 A conduction at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V bus systems and 24 V industrial rails. |
| RDS(on) | 0.028 Ω @ VGS = 10 V - Enables <1 W conduction loss at 18 A, reducing heatsink requirements. |
| ID (continuous) | 30 A @ TC = 25 °C - Supports high-current loads in compact PCB layouts with forced-air or passive heatsinking. |
| Qg / Qgd | 95 nC / 46 nC - Gate drive energy demand informs selection of gate drivers capable of ≥2 A peak sourcing/sinking. |
| EAS | 100 mJ - Rated single-pulse avalanche energy allows safe operation under inductive load switching faults. |
| TJ range | −55 to +175 °C - Enables deployment in under-hood automotive, industrial motor control, and high-ambient environments. |
| dV/dt rating | 4.5 V/ns - Confirmed immunity to false triggering during rapid voltage transients in noisy power stages. |
Pinout & Package
IRFIZ44GPbF uses the TO-220 FULLPAK package: isolated plastic body with integral drain tab, 3-pin vertical leadframe, 4.8 mm minimum creepage between drain tab and source/ground leads, and 3.1 °C/W junction-to-case thermal resistance. Mounting via single M3 screw (0.6 N·m torque) or clip directly to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | High-side power node / heat transfer surface | Electrically isolated metal tab serves as primary current path and thermal interface-requires no separate insulator when mounted to heatsink. |
| Source | Power return / reference node for gate drive | Low-inductance source connection enables stable gate control; internal LS = 7.5 nH limits di/dt-induced gate oscillation. |
| Gate | Control input / MOSFET turn-on/off signal | Threshold VGS(th) = 2.0–4.0 V ensures compatibility with standard 5 V and 10 V logic-level drivers; ±20 V max rating supports robust gate protection. |
Key Features
| Feature | Design Value |
|---|---|
| 2.5 kVRMS isolation (60 s, 60 Hz) | Eliminates need for external insulation hardware in commercial-industrial SMPS and motor inverters. |
| 175 °C maximum operating temperature | Enables extended lifetime in sealed enclosures or high-ambient environments without derating. |
| Low RthJC = 3.1 °C/W | Reduces thermal bottleneck between die and heatsink-supports higher power density than standard TO-220. |
| Body diode trr = 140–300 ns | Minimizes reverse recovery losses in synchronous rectification and freewheeling paths. |
| Dynamic dV/dt rating = 4.5 V/ns | Prevents spurious turn-on during high-slew-rate switching transitions in half-bridge configurations. |
Applications
| Industrial Motor Drives | DC-DC Converters |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 24–48 V BLDC motor control in factory automation actuators. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 30 A peak phase current with 100 mJ avalanche tolerance. Use Value: TO-220 FULLPAK isolation eliminates gate-drive level-shifting complexity and creepage compliance risk on PCB. |
Use Scenario: Primary-side switch in 400 W isolated forward converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: 60 V, 30 A main switch operating at ≤100 kHz with 95 nC gate charge demanding low-RDS(on) and fast turn-off. Use Value: 0.028 Ω RDS(on) reduces conduction loss by >35% vs. legacy 60 V MOSFETs, improving efficiency at full load. |
| Uninterruptible Power Supplies | LED Constant-Current Drivers |
|
Use Scenario: Battery-charging FET and inverter output switch in 1 kVA online UPS with 48 V battery bank. IC Role / Device Role / Timing Role: Bidirectional power switch managing charge/discharge cycles and AC output inversion with 175 °C thermal margin. Use Value: −55 to +175 °C operating range ensures reliability across storage, charging, and backup modes without thermal throttling. |
Use Scenario: PWM dimming switch in high-brightness LED streetlight driver with 36–72 V input range. IC Role / Device Role / Timing Role: Low-loss series switch controlling up to 5 A LED string current with minimal voltage drop and thermal rise. Use Value: 2.5 V body diode forward drop (VSD) at 30 A enables efficient freewheeling during PWM off-time without external Schottky. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | 60 V, 60 A, RDS(on) = 0.018 Ω, TO-220 non-isolated, no dV/dt rating specified | Lacks 2.5 kVRMS isolation and creepage compliance-requires external insulation and layout spacing | Preferred only where cost-per-amp is critical and isolation can be implemented externally. |
| IXTP50N10P | 100 V, 50 A, RDS(on) = 0.022 Ω, TO-220 FULLPAK, same isolation rating (2.5 kVRMS) | Higher voltage rating increases design margin but adds gate charge (110 nC) and cost | Chosen when system must withstand transient overvoltages beyond 60 V or future-proof for 72 V battery upgrades. |
Compared with STP60NF06 and IXTP50N10P, the IRFIZ44GPbF delivers optimal balance of isolation integrity, thermal performance, and 60 V system compatibility-making it the preferred choice for space-constrained, safety-critical 48 V industrial power stages where creepage and avalanche robustness are non-negotiable.
Availability
IRFIZ44GPbF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified manufacturing facilities.
Supply support for IRFIZ44GPbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRFIZ44GPbF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for ruggedized switching in commercial-industrial power conversion where isolation, thermal resilience, and avalanche capability are essential.
FAQ
What is the maximum continuous drain current rating for IRFIZ44GPbF at 100 °C case temperature?
The IRFIZ44GPbF supports 21 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and ensures reliable operation within the 175 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain TC ≤ 100 °C under full-load conditions. The IRFIZ44GPbF datasheet provides derating curves in Figure 9.
Does IRFIZ44GPbF require an external insulator when mounted to a heatsink?
No, the IRFIZ44GPbF does not require an external insulator when mounted to a heatsink. Its TO-220 FULLPAK package incorporates high-isolation molding compound providing 2.5 kVRMS isolation and 4.8 mm creepage distance between the drain tab and source/ground leads. This integrated isolation eliminates the need for mica washers or silicone pads in most commercial-industrial applications.
What is the typical gate threshold voltage range for IRFIZ44GPbF?
The IRFIZ44GPbF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA, per its specifications table. This logic-compatible threshold enables direct drive from microcontrollers and gate drivers operating at 3.3 V or 5 V, though 10 V gate drive is recommended to achieve the rated 0.028 Ω RDS(on). The IRFIZ44GPbF maintains stable threshold behavior up to 175 °C.
Can IRFIZ44GPbF be used in avalanche-mode switching applications?
Yes, the IRFIZ44GPbF is rated for single-pulse avalanche energy of 100 mJ under defined test conditions (VDD = 25 V, L = 129 μH, Rg = 25 Ω, IAS = 30 A), making it suitable for unclamped inductive switching in relay drivers, solenoid controls, and flyback snubbers. Repetitive avalanche operation is not guaranteed and requires careful thermal and electrical validation. The IRFIZ44GPbF datasheet specifies this rating in Section "Absolute Maximum Ratings".
What is the drain-to-sink capacitance value for IRFIZ44GPbF?
The drain-to-sink capacitance (C) of the IRFIZ44GPbF is 12 pF, measured at f = 1.0 MHz per the "Specifications" table. This low capacitance contributes to reduced common-mode noise coupling in isolated power stages and supports clean switching waveforms in high-frequency DC-DC converters. The value is confirmed in the dynamic parameter section of the IRFIZ44GPbF datasheet (Document Number: 91189).
IRFIZ44GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFIZ44GPBF FAQ
1.How can I place an order for IRFIZ44GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFIZ44GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFIZ44GPBF reliable?
The price and inventory of IRFIZ44GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ44GPBF is usually 5 days.
3.What payment methods are accepted for IRFIZ44GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ44GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFIZ44GPBF?
IRFIZ44GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFIZ44GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFIZ44GPBF?
For technical support, including IRFIZ44GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ44GPBF requirements.
6.How does Aetrix verify that IRFIZ44GPBF is sourced from the original manufacturer or authorized distributors?
All IRFIZ44GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ44GPBF meets industry standards.
7.What is the process for return or replacement of IRFIZ44GPBF?
All IRFIZ44GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ44GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFIZ44GPBF part is unused and in its original packaging.
Return procedure for IRFIZ44GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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