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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIZ48G

Name: IRFIZ48G
Brand: Vishay Siliconix
SKU: IRFIZ48G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIZ48G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIZ48G.pdf

Description:: MOSFET N-CH 60V 37A TO220-3

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Product details

Overview

IRFIZ48G from Vishay Siliconix is a 60 V, 37 A N-channel power MOSFET in TO-220 FULLPAK package, featuring 2.5 kVRMS isolation, 0.018 Ω R_DS(on) at V_GS = 10 V, and 175 °C maximum junction temperature-designed for high-reliability industrial switch-mode power supplies and motor control circuits requiring reinforced insulation.

For engineers reviewing the IRFIZ48G datasheet, IRFIZ48G pinout, IRFIZ48G application, or IRFIZ48G equivalent, this device's isolated TO-220 FULLPAK construction, 110 nC total gate charge, avalanche energy rating of 100 mJ, and 4.5 V/ns peak diode recovery dV/dt are critical selection criteria in high-voltage DC-DC converters and unclamped inductive switching systems.

Technical Context

The IRFIZ48G employs a third-generation silicon process optimized for fast switching and ruggedized avalanche performance. Its isolated TO-220 FULLPAK package integrates high-voltage insulation (2.5 kVRMS, 60 s) directly into the molding compound, eliminating external insulators while maintaining 3.0 °C/W junction-to-case thermal resistance.

It delivers low conduction loss via 0.018 Ω R_DS(on) at 10 V drive and supports high-current pulsed operation (IDM = 150 A), with dynamic parameters including 2400 pF input capacitance, 190 pF reverse transfer capacitance, and 120–180 ns body diode reverse recovery time under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V bus applications.
R_DS(on)	0.018 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 22 A continuous current, reducing heatsink requirements.
Q_g	110 nC - Gate drive energy demand; determines required driver strength and switching loss in hard-switched topologies.
E_AS	100 mJ - Single-pulse avalanche energy rating; supports robustness against inductive kickback without snubbers.
T_J max	+175 °C - Enables operation in high-ambient environments (e.g., enclosed industrial enclosures) without derating.
dV/dt (diode)	4.5 V/ns - Peak diode recovery dV/dt rating; critical for EMI control and preventing false turn-on in bridge configurations.
R_thJC	3.0 °C/W - Low junction-to-case thermal resistance; allows efficient heat transfer to heatsink with minimal thermal interface resistance.

Pinout & Package

IRFIZ48G uses the TO-220 FULLPAK package-a fully insulated, single-screw-mount variant of TO-220 with integrated high-voltage isolation. The package provides 4.8 mm sink-to-lead creepage distance and replaces traditional mica washers in commercial-industrial mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heatsink connection	Electrically isolated metal tab serves as both drain terminal and thermal interface; rated for 2.5 kVRMS isolation from leads.
Source	Power return / reference node	Low-inductance source lead (L_S = 7.5 nH); critical for minimizing shoot-through risk in half-bridge layouts.
Gate	Control input	High-impedance MOS gate requiring ≤ ±20 V drive; Q_gs = 29 nC and Q_gd = 36 nC define Miller plateau timing behavior.

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK package	Eliminates need for external insulating hardware-reduces BOM count and assembly steps in AC/DC and industrial SMPS designs.
2.5 kVRMS isolation (60 s)	Meets reinforced insulation requirements per IEC 60950-1 and IEC 62368-1 for primary-secondary barrier in offline converters.
175 °C maximum junction temperature	Supports extended lifetime in thermally constrained environments such as sealed motor drives and LED drivers.
Dynamic dV/dt rating (4.5 V/ns)	Ensures stable commutation during fast body diode recovery, reducing risk of parasitic turn-on in synchronous rectification.
Low R_DS(on) + low C_iss/C_oss balance	Optimizes trade-off between conduction loss (0.018 Ω) and switching loss (C_iss = 2400 pF, C_oss = 1300 pF) in 100–500 kHz applications.

Applications

Industrial Motor Drives	Server PSU Primary Switch
Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor controllers with regenerative braking. IC Role / Device Role / Timing Role: Power switching element handling 37 A continuous current and 150 A pulsed loads; body diode conducts reverse current during PWM dead-time. Use Value: 175 °C T_J rating and 100 mJ E_AS ensure reliability under repetitive inductive stress and thermal cycling.	Use Scenario: Main switching FET in active-clamp forward or LLC resonant converter stages of 1–3 kW server power supplies. IC Role / Device Role / Timing Role: High-voltage, high-current primary-side switch operating at 200–300 kHz with hard-switched or quasi-resonant gate drive. Use Value: TO-220 FULLPAK isolation enables direct heatsink mounting without insulator, simplifying thermal design while meeting safety spacing standards.
Uninterruptible Power Supplies	Industrial DC-DC Converters
Use Scenario: Bidirectional buck-boost switch in UPS battery charging/discharging circuits interfacing 48 V battery banks. IC Role / Device Role / Timing Role: Synchronous rectifier and power switch sharing same die; body diode reverse recovery (trr = 120–180 ns) impacts efficiency at 50–100 kHz. Use Value: 4.5 V/ns dV/dt rating prevents false triggering during rapid voltage transitions across transformer windings.	Use Scenario: Output stage switch in isolated 24 V to 5/12 V DC-DC modules for PLC I/O and sensor conditioning. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in flyback/isolated forward topologies. Use Value: 0.018 Ω R_DS(on) minimizes conduction loss at full load, improving efficiency over discrete diode solutions by >3% at 20 A.

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor controllers with regenerative braking.

IC Role / Device Role / Timing Role: Power switching element handling 37 A continuous current and 150 A pulsed loads; body diode conducts reverse current during PWM dead-time.

Use Value: 175 °C T_J rating and 100 mJ E_AS ensure reliability under repetitive inductive stress and thermal cycling.

Use Scenario: Main switching FET in active-clamp forward or LLC resonant converter stages of 1–3 kW server power supplies.

IC Role / Device Role / Timing Role: High-voltage, high-current primary-side switch operating at 200–300 kHz with hard-switched or quasi-resonant gate drive.

Use Value: TO-220 FULLPAK isolation enables direct heatsink mounting without insulator, simplifying thermal design while meeting safety spacing standards.

Uninterruptible Power Supplies

Industrial DC-DC Converters

Use Scenario: Bidirectional buck-boost switch in UPS battery charging/discharging circuits interfacing 48 V battery banks.

IC Role / Device Role / Timing Role: Synchronous rectifier and power switch sharing same die; body diode reverse recovery (trr = 120–180 ns) impacts efficiency at 50–100 kHz.

Use Value: 4.5 V/ns dV/dt rating prevents false triggering during rapid voltage transitions across transformer windings.

Use Scenario: Output stage switch in isolated 24 V to 5/12 V DC-DC modules for PLC I/O and sensor conditioning.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in flyback/isolated forward topologies.

Use Value: 0.018 Ω R_DS(on) minimizes conduction loss at full load, improving efficiency over discrete diode solutions by >3% at 20 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	60 V, 60 A, R_DS(on) = 0.014 Ω, non-isolated TO-220, no specified dV/dt rating	Lacks 2.5 kVRMS isolation; requires external insulator for reinforced insulation applications	Select when higher current rating is prioritized and isolation is handled at board/system level.
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, TO-220, non-isolated, 175 °C rating	Higher V_DS margin but higher on-resistance and no isolation; not drop-in for safety-critical 60 V designs	Choose only if system-level voltage transients exceed 60 V or isolation is implemented separately.

Compared with STP60NF06 and IXTP50N10P, the IRFIZ48G uniquely integrates certified 2.5 kVRMS isolation into its TO-220 FULLPAK package-enabling simplified compliance with safety standards without added components, while maintaining competitive R_DS(on) and thermal performance at 60 V class.

Availability

IRFIZ48G is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power supplies, and isolated DC-DC converters requiring stable component supply, long-term lifecycle support, and certified high-voltage isolation.

Supply support for IRFIZ48G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific optimization.

The IRFIZ48G belongs to Vishay's high-voltage isolated power MOSFET product line, engineered specifically for industrial and commercial power conversion systems where reinforced insulation, thermal resilience, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for the IRFIZ48G at 100 °C case temperature?

The IRFIZ48G has a continuous drain current rating of 26 A at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits under sustained operation and must be validated against actual heatsink performance and ambient conditions in the target application. The IRFIZ48G maintains safe operation up to 175 °C junction temperature, enabling use in thermally demanding environments when properly mounted.

Does the IRFIZ48G require an external insulator when mounted to a heatsink?

No-the IRFIZ48G does not require an external insulator when mounted to a heatsink because its TO-220 FULLPAK package incorporates integrated 2.5 kVRMS isolation between the drain tab and leads. This eliminates the need for mica washers or silicone pads in most commercial-industrial applications, provided mechanical mounting complies with Vishay's recommended torque (0.6 Nm for M3 screw) and creepage/clearance requirements are met per system-level safety standards.

What is the typical body diode reverse recovery time (trr) for the IRFIZ48G?

The typical body diode reverse recovery time (trr) for the IRFIZ48G is 120–180 ns, measured at TJ = 25 °C, IF = 72 A, and dI/dt = 100 A/μs. This parameter directly affects switching losses and EMI in hard-commutated topologies like synchronous rectifiers and half-bridges. The IRFIZ48G's trr specification supports reliable operation up to ~100 kHz without excessive diode-related losses, and its 4.5 V/ns peak dV/dt rating helps prevent false turn-on during recovery.

Can the IRFIZ48G be used in avalanche-rated applications?

Yes-the IRFIZ48G is rated for single-pulse avalanche energy (EAS) of 100 mJ under defined test conditions (VDD = 25 V, L = 85 μH, RG = 25 Ω). This makes it suitable for applications subject to unclamped inductive switching, such as relay driving, solenoid control, and certain motor phase-leg configurations. However, repetitive avalanche operation is not guaranteed and must be evaluated per application stress profiles using Vishay's Safe Operating Area (SOA) curves and thermal models.

What is the gate-source voltage limit for the IRFIZ48G?

The IRFIZ48G has a gate-source voltage limit of ±20 V, as stated in its Absolute Maximum Ratings. Exceeding this range risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +10 V to +15 V for full enhancement and –5 V to 0 V for fast turn-off, avoiding prolonged exposure near the ±20 V limits. The IRFIZ48G's V_GS(th) of 2.0–4.0 V ensures compatibility with standard 10 V logic-level drivers without requiring level-shifting circuitry.

IRFIZ48G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIZ48G FAQ

1.How can I place an order for IRFIZ48G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIZ48G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIZ48G reliable?

The price and inventory of IRFIZ48G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ48G is usually 5 days.

3.What payment methods are accepted for IRFIZ48G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ48G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIZ48G?

IRFIZ48G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIZ48G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIZ48G?

For technical support, including IRFIZ48G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ48G requirements.

6.How does Aetrix verify that IRFIZ48G is sourced from the original manufacturer or authorized distributors?

All IRFIZ48G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ48G meets industry standards.

7.What is the process for return or replacement of IRFIZ48G?

All IRFIZ48G units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ48G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIZ48G part is unused and in its original packaging.

Return procedure for IRFIZ48G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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