My Inquiry
My Account
Vishay Siliconix IRFIZ48GPBF
- Part No.:
- IRFIZ48GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFIZ48GPBF.pdf
- Description:
- MOSFET N-CH 60V 37A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,442
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFIZ48GPBF from Vishay Siliconix is a 60 V, 37 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 2.5 kVRMS isolation rating, 0.018 Ω RDS(on) at VGS = 10 V, and 175 °C maximum junction temperature-designed for high-reliability DC-DC converters, motor drive half-bridges, and industrial SMPS where thermal robustness and creepage safety are critical.
For engineers reviewing the IRFIZ48GPBF datasheet, IRFIZ48GPBF pinout, IRFIZ48GPBF application, or IRFIZ48GPBF equivalent, this device's verified 4.8 mm sink-to-lead creepage, low 3.0 °C/W junction-to-case thermal resistance, and unclamped avalanche energy rating of 100 mJ support safe operation in mains-connected power stages and isolated gate-drive topologies.
Technical Context
This third-generation power MOSFET integrates an isolated TO-220 FULLPAK package with internal molding compound providing 2.5 kVRMS isolation-equivalent to a 100 µm mica barrier-eliminating external insulators in commercial-industrial designs. Its dynamic dV/dt rating of 4.5 V/ns and body diode reverse recovery time (trr) of 120–180 ns enable stable switching in hard-switched converters.
The device features low gate charge (Qg = 110 nC), split into Qgs = 29 nC and Qgd = 36 nC, supporting efficient gate driving at moderate frequencies. Its RDS(on) exhibits +0.060 V/°C VDS temperature coefficient and remains stable up to 175 °C, enabling predictable conduction loss across wide thermal ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V bus systems and 24 V industrial rails with margin. |
| RDS(on) | 0.018 Ω @ VGS = 10 V - Enables ≤1.8 W conduction loss at 10 A continuous drain current. |
| ID (TC = 25 °C) | 37 A - Sustains full-load current without derating when mounted on adequately sized heatsink. |
| Qg / Qgs / Qgd | 110 / 29 / 36 nC - Gate drive energy optimized for standard 12 V gate drivers with <250 ns rise/fall times. |
| RthJC | 3.0 °C/W - Enables direct thermal path from die to heatsink via isolated tab, reducing junction temperature rise by ~110 °C/W vs. standard TO-220. |
| EAS | 100 mJ - Withstands single-pulse inductive energy events common in relay/snubber-free motor control. |
| trr / Qrr | 120–180 ns / 0.50–0.80 µC - Body diode recovery behavior supports synchronous rectification and freewheeling in buck/boost topologies. |
Pinout & Package
IRFIZ48GPBF uses the TO-220 FULLPAK package: isolated plastic housing with metal tab electrically connected to drain, 3-pin through-hole configuration (G-D-S), 4.8 mm minimum creepage between sink and leads, and 2.5 kVRMS isolation rated for 60 s at 60 Hz.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives 10 V logic-level gate drive; threshold voltage 2.0–4.0 V enables compatibility with microcontroller GPIO or dedicated gate drivers. |
| Drain (D) | High-side switch node | Connected to internal tab; serves as primary high-voltage output node and thermal interface to heatsink. |
| Source (S) | Power return / reference | Low-side connection point; forms common reference for gate drive and current sensing; not isolated from PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | Eliminates need for mica washers or silicone pads-reduces assembly cost and thermal interface resistance in AC/DC front-ends. |
| 2.5 kVRMS isolation | Validated per IEC 60950/62368 for reinforced insulation in secondary-side power switches and isolated DC-DC controllers. |
| 175 °C TJ max | Supports operation in sealed enclosures or high-ambient environments without forced air cooling. |
| Dynamic dV/dt rating | 4.5 V/ns immunity prevents false turn-on during fast voltage transients in high-side switching applications. |
| Low RthJC (3.0 °C/W) | Enables >50 W dissipation with ≤150 °C junction rise over 25 °C case-critical for compact industrial power modules. |
Applications
| Industrial Motor Drive | Server PSU Primary Switch |
|---|---|
Use Scenario: Half-bridge leg in 24 V brushless DC motor controller for HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switched at 20–50 kHz with bootstrap gate drive. Use Value: Isolated tab allows direct mounting to shared heatsink without insulating hardware; 175 °C rating ensures reliability under sustained 60 °C ambient. |
Use Scenario: Primary-side switching transistor in 80 PLUS Titanium-rated 1.5 kW server power supply. IC Role / Device Role / Timing Role: Hard-switched 60 V synchronous rectifier replacement in LLC resonant converter secondary stage. Use Value: 0.018 Ω RDS(on) reduces conduction loss by 35% vs. legacy 60 V MOSFETs; trr < 180 ns minimizes body diode conduction penalty. |
| Medical Power Adapter | EV Charging Auxiliary Supply |
Use Scenario: Isolated 48 V input DC-DC converter for patient-monitoring equipment requiring reinforced insulation. IC Role / Device Role / Timing Role: Primary switch in flyback topology operating at 100 kHz with 60 V clamp. Use Value: 2.5 kVRMS isolation and 4.8 mm creepage meet IEC 60601-1 requirements without additional barriers or spacing. |
Use Scenario: 12 V auxiliary power supply in 400 V EV on-board charger, powered from intermediate DC bus. IC Role / Device Role / Timing Role: Low-side switch in buck regulator feeding MCU, CAN transceiver, and fan control circuitry. Use Value: 150 A pulsed ID rating handles cold-start inrush; EAS = 100 mJ protects against transformer saturation faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | 60 V, 60 A, RDS(on) = 0.014 Ω, non-isolated TO-220, no dV/dt rating specified | Lacks 2.5 kVRMS isolation and creepage compliance; requires external insulator for reinforced insulation designs | Select when higher current and lower RDS(on) are prioritized over isolation and board-level safety certification effort |
| IXTP50N10P | 100 V, 50 A, RDS(on) = 0.022 Ω, TO-220, isolated tab (1.5 kVRMS), 150 °C TJ max | Higher voltage rating but lower isolation strength and reduced thermal margin vs. IRFIZ48GPBF | Choose for 100 V bus systems needing isolation, accepting 25 °C lower max junction temperature and 0.5 kVRMS less isolation |
Compared with STP60NF06 and IXTP50N10P, IRFIZ48GPBF uniquely delivers 2.5 kVRMS isolation, 175 °C operation, and 4.8 mm creepage in a 60 V/37 A package-making it the only option among the three qualified for medical and industrial mains-connected secondary-side switching without layout redesign.
Availability
IRFIZ48GPBF is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, medical DC-DC converters, and EV auxiliary power systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for IRFIZ48GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The IRFIZ48GPBF belongs to Vishay's third-generation isolated power MOSFET family, engineered specifically for high-efficiency, safety-certified switching in industrial, medical, and telecom power systems where isolation integrity and thermal resilience are non-negotiable.
FAQ
What is the maximum continuous drain current for IRFIZ48GPBF at 100 °C case temperature?
The IRFIZ48GPBF supports 26 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and must be validated against actual heatsink performance and ambient conditions in the final design. The IRFIZ48GPBF maintains stable RDS(on) up to 175 °C junction temperature, enabling reliable operation even under transient overload.
Does IRFIZ48GPBF require external isolation hardware when mounted to a heatsink?
No, the IRFIZ48GPBF does not require external isolation hardware due to its integrated TO-220 FULLPAK construction, which provides 2.5 kVRMS isolation between drain (tab) and leads. The molding compound achieves isolation equivalent to a 100 µm mica barrier, satisfying reinforced insulation requirements per IEC 60950 and IEC 62368 without added washers or pads-verified in the IRFIZ48GPBF datasheet revision C.
What is the gate-source threshold voltage range for IRFIZ48GPBF?
The IRFIZ48GPBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 µA, per its Specifications table. This logic-level-compatible threshold enables direct drive from 3.3 V or 5 V microcontrollers when combined with appropriate gate resistor sizing, though 10 V drive is recommended for minimal RDS(on) and optimal switching performance in the IRFIZ48GPBF.
How does the body diode performance of IRFIZ48GPBF compare to standard MOSFETs?
The IRFIZ48GPBF body diode exhibits trr = 120–180 ns and Qrr = 0.50–0.80 µC at TJ = 25 °C, IF = 72 A, and dI/dt = 100 A/µs-superior to many general-purpose MOSFETs in its class. Its VSD = 2.0 V at IS = 37 A confirms low forward drop, while the specified peak diode recovery dV/dt of 4.5 V/ns ensures robustness against commutation-induced voltage spikes in the IRFIZ48GPBF.
Can IRFIZ48GPBF be used in avalanche-rated circuits?
Yes, the IRFIZ48GPBF is rated for single-pulse unclamped inductive switching with EAS = 100 mJ, tested per Figure 12 in its datasheet. This capability allows safe operation in circuits prone to inductive energy storage-such as relay drivers or transformer-coupled gate drives-without external snubbers, provided pulse width and duty cycle remain within limits defined for the IRFIZ48GPBF.
IRFIZ48GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFIZ48GPBF FAQ
1.How can I place an order for IRFIZ48GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFIZ48GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFIZ48GPBF reliable?
The price and inventory of IRFIZ48GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ48GPBF is usually 5 days.
3.What payment methods are accepted for IRFIZ48GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ48GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFIZ48GPBF?
IRFIZ48GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFIZ48GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFIZ48GPBF?
For technical support, including IRFIZ48GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ48GPBF requirements.
6.How does Aetrix verify that IRFIZ48GPBF is sourced from the original manufacturer or authorized distributors?
All IRFIZ48GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ48GPBF meets industry standards.
7.What is the process for return or replacement of IRFIZ48GPBF?
All IRFIZ48GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ48GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFIZ48GPBF part is unused and in its original packaging.
Return procedure for IRFIZ48GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFIZ48GPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
