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Vishay Siliconix IRFL014TR

Part No.:
IRFL014TR
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRFL014TR.pdf
Description:
MOSFET N-CH 60V 2.7A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,363

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Product details

Overview

IRFL014TR from Vishay Siliconix is a 60 V, 2.7 A N-channel enhancement-mode power MOSFET in SOT-223 package, with RDS(on) = 0.20 Ω at VGS = 10 V, Qg = 11 nC, and 100 mJ single-pulse avalanche energy-designed for DC-DC converters, motor drivers, and load-switching in industrial and consumer power supplies.

For engineers reviewing the IRFL014TR datasheet, IRFL014TR pinout, IRFL014TR application, or IRFL014TR equivalent, key selection criteria include its surface-mount SOT-223 thermal performance (2.0 W PCB mount), fast switching (tr = 50 ns), dynamic dV/dt rating (4.5 V/ns), and gate drive simplicity (VGS(th) = 2.0–4.0 V).

Technical Context

This MOSFET employs third-generation silicon technology optimized for ruggedized switching in medium-power surface-mount applications. Its design integrates low gate charge (Qg = 11 nC) and low output capacitance (Coss = 160 pF) to minimize switching losses while maintaining high avalanche robustness (EAS = 100 mJ).

The device operates as a unidirectional voltage-controlled switch with an integral body diode (VSD = 1.6 V, trr = 70–140 ns). It supports linear-mode operation within SOA limits and features ±20 V gate-source voltage tolerance and 150 °C maximum junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage before breakdown; defines use in ≤48 V bus systems with margin.
RDS(on)0.20 Ω @ VGS = 10 V - Conduction loss of 0.86 W at 2.07 A; enables compact thermal design on FR-4 PCB.
Qg11 nC - Gate drive energy requirement; determines driver strength needed for <50 ns rise time.
ID (continuous)2.7 A @ TC = 25 °C - Continuous current capability under heatsink conditions; derates to 1.7 A at 100 °C case.
EAS100 mJ - Unclamped inductive switching energy handling; supports reliable operation in relay/snubberless flyback designs.
dV/dt rating4.5 V/ns - Immunity to parasitic turn-on during high-speed commutation; reduces need for external gate clamping.
TJ range−55 to +150 °C - Extended temperature operation suitable for automotive under-hood and industrial ambient environments.

Pinout & Package

SOT-223 package with exposed drain tab for enhanced thermal conduction; 1" square FR-4 PCB mounting enables 2.0 W power dissipation without heatsink.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateControl terminal; requires ≥2.0 V to initiate conduction; driven by logic-level or dedicated gate driver.
Pin 2 (D)DrainMain current input; electrically connected to exposed copper tab for thermal and electrical path to PCB ground plane.
Pin 3 (S)SourceCurrent return path; referenced to control signal common; forms source node for gate drive loop.
Tab (D)Drain (thermal & electrical)Integral heatsink interface; must be soldered to large copper pour for RthJA ≤ 60 °C/W performance.

Key Features

FeatureDesign Value
Surface-mount SOT-223Enables automated assembly and eliminates through-hole drilling; tab improves thermal transfer over standard SOT-23.
Dynamic dV/dt rating4.5 V/ns immunity prevents false triggering in noisy switching nodes without added gate resistors or clamps.
Fast switching10 ns turn-on delay + 50 ns rise time allows >500 kHz PWM operation with low overlap loss.
Ease of parallelingPositive temperature coefficient of RDS(on) ensures self-balancing current sharing when multiple IRFL014TR devices are used.
Simple drive requirementsVGS(th) range (2.0–4.0 V) supports direct microcontroller GPIO driving without level-shifting in 3.3 V/5 V systems.

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: Step-down regulation from 12–48 V input to 3.3–12 V output in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200–500 kHz with forced continuous conduction mode.

Use Value: 0.20 Ω RDS(on) minimizes conduction loss at 2 A load; 11 nC Qg enables efficient gate drive from integrated controller.

Use Scenario: H-bridge half-bridge leg for bidirectional 24 V, 1.5 A brushed motor control in HVAC actuators.

IC Role / Device Role / Timing Role: High-current, low-duty-cycle switching element with body-diode freewheeling during PWM off-time.

Use Value: 100 mJ EAS withstands inductive kickback; 1.6 V VSD reduces freewheeling loss versus external Schottky.

Hot-Swap Load SwitchLED Constant-Current Driver

Use Scenario: Inrush-limited 5–24 V board-level power sequencing in telecom line cards and network switches.

IC Role / Device Role / Timing Role: Controlled turn-on switch with soft-start via gate resistor; handles 2.7 A steady-state load.

Use Value: 2.7 A continuous rating and 22 A pulsed capability support surge tolerance; SOT-223 tab simplifies thermal management.

Use Scenario: Dimmable constant-current sink for 1–3 high-brightness LEDs in smart lighting fixtures.

IC Role / Device Role / Timing Role: Linear-mode current regulator modulated by PWM or analog voltage at gate.

Use Value: 150 °C TJ(max) and 60 V VDS allow safe operation across LED string voltage variations and transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SiHFL014TR-GE3Same die, identical RDS(on), Qg, and SOA; differs only in lead-free plating specification and manufacturing location (GE3 vs BE3).No functional difference; qualified for same industrial and commercial temperature ranges and PCB mount profiles.Select SiHFL014TR-GE3 if RoHS-compliant tin-silver-copper plating is required per procurement policy.
IRFL9014TRPbFP-channel counterpart (−60 V, −1.7 A); complementary topology only; not pin-compatible or functionally interchangeable.Used in high-side switching configurations where N-channel would require bootstrap or isolated gate drive.Choose IRFL9014TRPbF only for high-side load switch designs requiring negative VGS control; not a drop-in replacement.

Compared with IRFL014TR, SiHFL014TR-GE3 offers identical electrical and thermal behavior with alternate plating compliance, while IRFL9014TRPbF serves a fundamentally different circuit role (high-side vs low-side) and requires layout redesign.

Availability

IRFL014TR is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and hot-swap load switches requiring stable component supply, long-term manufacturability, and traceable sourcing for industrial and embedded OEM programs.

Supply support for IRFL014TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.

The IRFL014TR belongs to Vishay's third-generation SOT-223 power MOSFET family, engineered for cost-effective, surface-mount power switching in space-constrained industrial and consumer power systems.

FAQ

What is the maximum continuous drain current for IRFL014TR at 100 °C case temperature?

The IRFL014TR supports 1.7 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the SOT-223 package on standard PCBs; actual current depends on copper area, airflow, and ambient conditions. The IRFL014TR datasheet specifies linear derating beyond 25 °C at 0.025 W/°C for junction-to-case and 0.017 W/°C for PCB-mounted configurations.

Does IRFL014TR have avalanche capability, and how is it rated?

Yes, the IRFL014TR is rated for single-pulse avalanche energy of 100 mJ under specified test conditions (VDD = 25 V, L = 16 mH, IAS = 2.7 A). This rating applies to unclamped inductive switching events and is validated per JEDEC standards. The IRFL014TR does not specify repetitive avalanche capability, so designers must ensure system-level protection or limit duty cycle accordingly.

Can IRFL014TR be driven directly from a 3.3 V microcontroller GPIO?

The IRFL014TR has a gate threshold voltage range of 2.0–4.0 V, meaning a 3.3 V GPIO may partially enhance the channel but will not achieve full RDS(on) = 0.20 Ω. At VGS = 3.3 V, RDS(on) rises significantly (typical ~0.45 Ω), increasing conduction loss. For optimal performance, the IRFL014TR requires ≥10 V gate drive; use a level shifter or gate driver IC when interfacing with 3.3 V logic.

What is the thermal resistance from junction to ambient for IRFL014TR in standard PCB mount?

When mounted on a 1" square FR-4 PCB, the IRFL014TR has a maximum junction-to-ambient thermal resistance (RthJA) of 60 °C/W. This value assumes no additional heatsinking; adding copper pour or thermal vias can improve performance. The junction-to-case (RthJC) is 40 °C/W, and the exposed drain tab must be soldered to maximize heat transfer-critical for sustaining 2.0 W power dissipation.

Is IRFL014TR suitable for linear-mode (active-region) operation?

Yes, the IRFL014TR is characterized for linear-mode operation within its Safe Operating Area (SOA), as shown in Figure 8 of its datasheet. It supports DC and pulsed operation with voltage and current combinations bounded by thermal and avalanche limits. However, sustained linear use requires careful thermal design due to power dissipation concentrated at the die; the IRFL014TR is not optimized for extended analog pass-transistor roles like LDOs.

IRFL014TR Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta), 3.1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRFL014TR FAQ

1.How can I place an order for IRFL014TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL014TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL014TR reliable?

The price and inventory of IRFL014TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL014TR is usually 5 days.

3.What payment methods are accepted for IRFL014TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL014TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL014TR?

IRFL014TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL014TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL014TR?

For technical support, including IRFL014TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL014TR requirements.

6.How does Aetrix verify that IRFL014TR is sourced from the original manufacturer or authorized distributors?

All IRFL014TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL014TR meets industry standards.

7.What is the process for return or replacement of IRFL014TR?

All IRFL014TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFL014TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL014TR part is unused and in its original packaging.

Return procedure for IRFL014TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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