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Vishay Siliconix IRFL110PBF
- Part No.:
- IRFL110PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
IRFL110PBF.pdf
- Description:
- MOSFET N-CH 100V 1.5A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:2,816
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Product details
Overview
IRFL110PBF from Vishay Siliconix is a 100 V, 1.5 A N-channel enhancement-mode power MOSFET in SOT-223 package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating up to 150 mJ. It serves as a robust low-side switch in DC-DC converters, LED drivers, and motor control circuits where surface-mount reliability and thermal performance are critical.
For engineers reviewing the IRFL110PBF datasheet, IRFL110PBF pinout, IRFL110PBF application, or IRFL110PBF equivalent, key selection criteria include its 100 V drain-source breakdown voltage, 0.54 Ω on-resistance at 10 V gate drive, SOT-223 thermal capability (2.0 W PCB mount), fast switching (6.9 ns turn-on delay), and body diode recovery time of 100–200 ns.
Technical Context
This third-generation power MOSFET employs planar V-groove silicon technology optimized for ruggedness and fast switching. Its design supports unclamped inductive switching with validated repetitive avalanche capability (IAR = 1.5 A, EAR = 0.31 mJ) and high dV/dt immunity (5.5 V/ns).
The device operates with gate threshold voltage between 2.0 V and 4.0 V, enabling compatibility with standard 5 V and 10 V logic-level drive circuits. Internal source and drain inductances (LS = 6.0 nH, LD = 4.0 nH) are characterized to support accurate switching loss modeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for use in 48 V bus and flyback primary-side switching applications |
| RDS(on) @ VGS = 10 V | 0.54 Ω - Enables ≤0.77 W conduction loss at 1.5 A continuous drain current |
| Qg | 8.3 nC - Determines gate drive power requirement and switching speed in PWM circuits |
| ID (TC = 25 °C) | 1.5 A - Continuous current rating under heatsink-mounted conditions |
| EAS | 150 mJ - Single-pulse avalanche energy tolerance for inductive load protection |
| TJ Range | −55 °C to +150 °C - Supports operation in industrial and automotive under-hood environments |
| RthJA (PCB mount) | 60 °C/W - Thermal resistance defining temperature rise on 1" FR-4 board without heatsink |
Pinout & Package
SOT-223 package with exposed drain tab for enhanced thermal dissipation; footprint compatible with automated pick-and-place; JEDEC TO-261AA compliant outline; 6.3–6.7 mm length × 3.3–3.7 mm width × 1.55–1.80 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring ≤±20 V gate-source voltage; 2.3 nC gate-source charge enables low-drive-current operation |
| Pin 2 (D) | Drain | Main high-side current path; electrically connected to exposed tab for thermal and electrical grounding in PCB layout |
| Pin 3 (S) | Source | Reference node for gate drive; internal source inductance (6.0 nH) affects high-speed switching stability |
| Tab (D) | Drain (thermal pad) | Primary heat transfer path; must be soldered to copper pour for rated 2.0 W PCB-mount power dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Validated for ≥106 cycles at IAR = 1.5 A and EAR = 0.31 mJ - eliminates need for external snubbers in relay/inductor drive |
| Dynamic dV/dt rating | 5.5 V/ns - prevents false turn-on during high-slew-rate transients in noisy industrial environments |
| Fast switching | 6.9 ns turn-on delay + 16 ns rise time - reduces switching losses in 100–500 kHz SMPS designs |
| Surface-mount optimized | SOT-223 thermal pad delivers >1.25 W dissipation on standard FR-4 - avoids through-hole assembly cost and space penalty |
| Low gate charge | 8.3 nC total with 3.8 nC Miller charge - minimizes driver IC stress and enables use of low-power microcontroller GPIOs |
Applications
| LED Constant-Current Driver | DC-DC Buck Converter Low-Side Switch |
|---|---|
Use Scenario: Driving high-brightness LEDs in automotive interior lighting with PWM dimming. IC Role / Device Role / Timing Role: Low-side switching element controlling LED current path with 100 kHz–1 MHz PWM frequency. Use Value: 0.54 Ω RDS(on) limits conduction loss to <0.8 W at 1.5 A, while 100 V rating accommodates battery transients up to 80 V. |
Use Scenario: Synchronous rectification in 12 V input, 3.3 V/2 A output buck regulator for embedded systems. IC Role / Device Role / Timing Role: Power switch in low-side position with gate driven by dedicated controller IC. Use Value: 8.3 nC Qg enables efficient 500 kHz switching; body diode trr = 100–200 ns reduces reverse recovery loss during dead-time. |
| Brushed DC Motor Control | Industrial Relay/Valve Driver |
Use Scenario: H-bridge half-bridge leg driving 24 V, 1 A brushed motors in factory automation actuators. IC Role / Device Role / Timing Role: Unidirectional power switch with integrated body diode providing freewheeling path. Use Value: Repetitive avalanche rating (EAR = 0.31 mJ) withstands inductive kickback without external clamping diodes. |
Use Scenario: Solid-state replacement for electromechanical relays controlling solenoid valves in HVAC control panels. IC Role / Device Role / Timing Role: High-voltage interface switch isolating 24 V control logic from 100 V load side. Use Value: 100 V VDS margin ensures safe operation across 24 V nominal supply with surge immunity per IEC 61000-4-5. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFL110TR-GE3 | Same die, Pb-free/halogen-free SOT-223 variant with "-GE3" marking; identical RDS(on), Qg, and avalanche specs | No functional difference; qualified for RoHS-compliant and green-chemistry manufacturing lines | Select when full halogen-free compliance is required per IPC-1752A or customer environmental policy |
| IRFL9110PBF | P-channel counterpart: −100 V, −1.5 A, RDS(on) = 0.90 Ω @ VGS = −10 V; complementary topology only | Used in high-side switching configurations where level-shifting is impractical; not drop-in replaceable | Choose only for high-side load switch designs requiring negative gate drive; requires circuit redesign |
Compared with IRFL110PBF, SiHFL110TR-GE3 offers identical electrical performance with enhanced environmental compliance, while IRFL9110PBF provides complementary P-channel functionality but demands topology changes and yields higher conduction loss - making IRFL110PBF optimal for cost-sensitive, low-side, surface-mount power switching.
Availability
IRFL110PBF is available at Aetrix Electronics and suitable for LED drivers, DC-DC converters, and industrial valve control requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.
Supply support for IRFL110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.
The IRFL110PBF belongs to Vishay's third-generation surface-mount power MOSFET family engineered for high-reliability, medium-voltage switching in space-constrained industrial and automotive subsystems.
FAQ
What is the maximum continuous drain current for IRFL110PBF at 100 °C case temperature?
The IRFL110PBF supports 0.96 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.025 W/°C and 3.1 W maximum power dissipation at 25 °C. This rating assumes proper PCB copper area for thermal conduction and accounts for junction-to-case thermal resistance of 40 °C/W.
Does IRFL110PBF have a specified body diode reverse recovery time?
Yes, the IRFL110PBF body diode reverse recovery time (trr) is specified as 100–200 ns at TJ = 25 °C, IF = 5.6 A, and dI/dt = 100 A/μs. This parameter is critical for synchronous rectifier and freewheeling applications where reverse recovery loss impacts efficiency.
Is IRFL110PBF suitable for logic-level gate drive?
No, IRFL110PBF is not a logic-level MOSFET; its gate threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for RDS(on) at VGS = 10 V. For reliable enhancement-mode operation with low on-resistance, a 10 V gate drive is recommended - 5 V drive yields significantly higher RDS(on).
What is the thermal resistance from junction to ambient for IRFL110PBF mounted on a PCB?
The IRFL110PBF has a maximum junction-to-ambient thermal resistance (RthJA) of 60 °C/W when mounted on a 1" square FR-4 PCB. This value assumes standard JEDEC test conditions and defines the worst-case temperature rise for 2.0 W power dissipation in typical surface-mount layouts.
Can IRFL110PBF be paralleled for higher current handling?
Yes, the IRFL110PBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Layout symmetry, matched gate drive paths, and individual gate resistors are required to ensure balanced dynamic current distribution across multiple devices.
IRFL110PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 900mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
IRFL110PBF FAQ
1.How can I place an order for IRFL110PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFL110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFL110PBF reliable?
The price and inventory of IRFL110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL110PBF is usually 5 days.
3.What payment methods are accepted for IRFL110PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL110PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFL110PBF?
IRFL110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFL110PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFL110PBF?
For technical support, including IRFL110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL110PBF requirements.
6.How does Aetrix verify that IRFL110PBF is sourced from the original manufacturer or authorized distributors?
All IRFL110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL110PBF meets industry standards.
7.What is the process for return or replacement of IRFL110PBF?
All IRFL110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFL110PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFL110PBF part is unused and in its original packaging.
Return procedure for IRFL110PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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