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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFL110TR

Name: IRFL110TR
Brand: Vishay Siliconix
SKU: IRFL110TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL110TR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL110TR.pdf

Description:: MOSFET N-CH 100V 1.5A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFL110TR from Vishay Siliconix is a surface-mount N-channel power MOSFET in SOT-223 package, rated for 100 V drain-source voltage, 1.5 A continuous drain current at 25 °C, and 0.54 Ω R_DS(on) at V_GS = 10 V. It supports repetitive avalanche operation (E_AS = 150 mJ), features fast switching (t_r = 16 ns), and is used in DC-DC converters, LED drivers, and low-power motor control circuits.

For engineers reviewing the IRFL110TR datasheet, IRFL110TR pinout, IRFL110TR application, or IRFL110TR equivalent, key selection criteria include its 100 V blocking capability, thermal performance on PCB mount (R_thJA = 60 °C/W), avalanche ruggedness, gate charge (Q_g = 8.3 nC), and compatibility with standard SOT-223 pick-and-place assembly.

Technical Context

This third-generation power MOSFET uses planar silicon technology optimized for high-voltage, low-current switching applications. Its design integrates a robust body diode (t_rr = 100–200 ns, Q_rr = 0.44–0.88 μC) and exhibits stable R_DS(on) over temperature (ΔV_DS/T_J = 0.63 V/°C).

The device operates with simple gate drive requirements (V_GS(th) = 2.0–4.0 V), supports dynamic dV/dt up to 5.5 V/ns, and delivers linear derating (0.017 W/°C) when mounted on a 1" FR-4 PCB - enabling reliable thermal management without external heatsinking in space-constrained designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transients in industrial and automotive auxiliary supplies.
R_DS(on) @ V_GS = 10 V	0.54 Ω - limits conduction loss to ≤ 0.77 W at 1.5 A, suitable for <2 W load switching.
Q_g	8.3 nC - enables efficient 100–500 kHz switching with standard gate drivers (e.g., TC4420, UCC27531).
E_AS	150 mJ - withstands unclamped inductive energy in relay/snubberless flyback designs without external clamping.
T_J Range	−55 to +150 °C - qualified for extended-temperature industrial and outdoor equipment operation.
I_D (PCB mount)	2.0 W max at T_A = 25 °C - delivers usable power handling on standard 1"² FR-4 board without metal-core substrate.

Pinout & Package

SOT-223 package with exposed drain tab for enhanced thermal conduction; footprint compatible with JEDEC TO-261AA; 3.3 mm × 6.7 mm body; 1.8 mm height; lead (Pb)-free and halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; threshold range 2.0–4.0 V ensures compatibility with 3.3 V and 5 V microcontrollers.
D (Drain)	High-side switch output	Connected to exposed tab - must be electrically isolated from heatsink unless referenced to system ground; carries full load current and avalanche energy.
S (Source)	Return path / reference node	Common return for gate drive and load; internal source inductance (L_S = 6.0 nH) impacts diode recovery behavior in hard-switched topologies.

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for ≥10⁵ cycles of E_AR = 0.31 mJ pulses - eliminates need for external snubbers in solenoid/relay drive.
Dynamic dV/dt immunity	5.5 V/ns - prevents false turn-on during high-slew-rate transients in noisy industrial environments.
Fast switching	t_r = 16 ns, t_f = 9.4 ns - reduces switching losses below 500 kHz, supporting compact magnetics in portable power supplies.
Thermally enhanced SOT-223	60 °C/W R_thJA (PCB mount) - achieves >2 W dissipation on standard FR-4, avoiding SO-8 or DPAK for cost-sensitive designs.

Applications

LED Constant-Current Driver	Low-Voltage DC Motor Control
Use Scenario: Driving 1–3 series white LEDs from 12 V supply in signage or indicator lighting. IC Role / Device Role / Timing Role: Low-side switch modulated via PWM from MCU GPIO; handles peak currents up to 1.5 A. Use Value: 0.54 Ω R_DS(on) minimizes dropout and heat rise; body diode reverse recovery (t_rr ≤ 200 ns) ensures clean PWM edges without shoot-through risk.	Use Scenario: Bidirectional H-bridge half-bridge leg for 5–24 V brushed DC motors in robotics or actuation. IC Role / Device Role / Timing Role: High-side or low-side switching element; synchronized with complementary MOSFET using dead-time control. Use Value: Avalanche rating absorbs inductive kickback during direction reversal; 100 V rating provides margin against back-EMF spikes up to 80 V.
Isolated Flyback Auxiliary Supply	Programmable Current Sink
Use Scenario: Secondary-side synchronous rectifier or primary-side switch in <5 W offline flyback converters. IC Role / Device Role / Timing Role: Primary-side switching transistor operating at 65–130 kHz; driven by UC384x or similar controller. Use Value: 150 mJ single-pulse avalanche energy tolerates leakage inductance spikes without clamp circuitry; Q_g = 8.3 nC enables efficient gate drive at 100 kHz.	Use Scenario: Precision current sink for sensor biasing (e.g., photodiode, RTD) or calibration reference in test equipment. IC Role / Device Role / Timing Role: Linear-mode pass element controlled by op-amp feedback loop; dissipates ≤1.2 W continuously. Use Value: Stable V_GS(th) (2.0–4.0 V) and low g_fs variation enable predictable I_D regulation; SOA curve supports safe linear operation up to 100 °C case temperature.

LED Constant-Current Driver

Low-Voltage DC Motor Control

Use Scenario: Driving 1–3 series white LEDs from 12 V supply in signage or indicator lighting.

IC Role / Device Role / Timing Role: Low-side switch modulated via PWM from MCU GPIO; handles peak currents up to 1.5 A.

Use Value: 0.54 Ω R_DS(on) minimizes dropout and heat rise; body diode reverse recovery (t_rr ≤ 200 ns) ensures clean PWM edges without shoot-through risk.

Use Scenario: Bidirectional H-bridge half-bridge leg for 5–24 V brushed DC motors in robotics or actuation.

IC Role / Device Role / Timing Role: High-side or low-side switching element; synchronized with complementary MOSFET using dead-time control.

Use Value: Avalanche rating absorbs inductive kickback during direction reversal; 100 V rating provides margin against back-EMF spikes up to 80 V.

Isolated Flyback Auxiliary Supply

Programmable Current Sink

Use Scenario: Secondary-side synchronous rectifier or primary-side switch in <5 W offline flyback converters.

IC Role / Device Role / Timing Role: Primary-side switching transistor operating at 65–130 kHz; driven by UC384x or similar controller.

Use Value: 150 mJ single-pulse avalanche energy tolerates leakage inductance spikes without clamp circuitry; Q_g = 8.3 nC enables efficient gate drive at 100 kHz.

Use Scenario: Precision current sink for sensor biasing (e.g., photodiode, RTD) or calibration reference in test equipment.

IC Role / Device Role / Timing Role: Linear-mode pass element controlled by op-amp feedback loop; dissipates ≤1.2 W continuously.

Use Value: Stable V_GS(th) (2.0–4.0 V) and low g_fs variation enable predictable I_D regulation; SOA curve supports safe linear operation up to 100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFL110TR-GE3	Same die, alternate manufacturing location; identical V_DS, R_DS(on), Q_g, and avalanche specs; RoHS-compliant marking "GE3".	No functional difference; approved for same PCB layouts and thermal designs.	Select SiHFL110TR-GE3 when requiring Vishay's latest production lot traceability and GE3-qualified supply chain.
IRFL9110TRPBF	P-channel counterpart (−100 V, R_DS(on) = 0.75 Ω); complementary topology only; not pin-compatible.	Used in high-side switch configurations where load connects to V_IN; requires inverted gate drive logic.	Choose IRFL9110TRPBF only for high-side switching where N-channel bootstrap complexity is undesirable; not a drop-in replacement.

Compared with IRFL110TR, SiHFL110TR-GE3 offers identical electrical and thermal performance with updated compliance labeling, while IRFL9110TRPBF serves a fundamentally different circuit role (P-channel high-side) and requires redesign of gate drive and layout - making the former a true sourcing alternative and the latter a functional complement.

Availability

IRFL110TR is available at Aetrix Electronics and suitable for LED drivers, low-power motor control, isolated auxiliary supplies, and programmable current sinks requiring stable component supply across industrial and embedded design cycles.

Supply support for IRFL110TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.

The IRFL110TR belongs to Vishay's third-generation SOT-223 power MOSFET family, engineered for cost-sensitive, thermally constrained applications where surface-mount reliability and avalanche tolerance are critical - such as consumer adapters, industrial sensors, and battery-powered systems.

FAQ

What is the maximum continuous drain current for IRFL110TR at 100 °C case temperature?

The IRFL110TR supports 0.96 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the SOT-223 package under sustained power dissipation; designers must verify junction temperature using R_thJC = 40 °C/W and actual PCB copper area to ensure T_J stays within −55 to +150 °C.

Does IRFL110TR have a specified body diode reverse recovery time?

Yes, the IRFL110TR datasheet specifies t_rr = 100–200 ns under conditions of T_J = 25 °C, I_F = 5.6 A, and dI/dt = 100 A/μs. This parameter is critical for hard-switched topologies like flyback or buck converters where diode recovery affects switching loss and EMI; the value confirms suitability for 100–500 kHz operation with appropriate snubbing.

Can IRFL110TR be used with 3.3 V microcontroller GPIO for gate drive?

The IRFL110TR has a gate threshold voltage range of 2.0–4.0 V, so it may partially turn on with 3.3 V drive but will not achieve full enhancement (R_DS(on) = 0.54 Ω requires V_GS = 10 V). For reliable saturation, use a gate driver (e.g., TC4427) or level-shifter; direct 3.3 V drive results in higher conduction loss and thermal stress due to elevated R_DS(on).

What is the thermal resistance from junction to ambient for IRFL110TR on a standard PCB?

The IRFL110TR has a maximum junction-to-ambient thermal resistance (R_thJA) of 60 °C/W when mounted on a 1" square FR-4 PCB, per the datasheet's thermal resistance ratings table. This value assumes no additional copper pour or heatsinking; adding 2 oz. copper and thermal vias can improve performance, but design validation is required for each layout.

Is IRFL110TR suitable for linear-mode (ohmic) operation?

Yes - the IRFL110TR's Safe Operating Area (SOA) curve (Fig. 8) explicitly covers DC and pulsed linear operation up to 100 °C case temperature. Its 100 V rating and 0.54 Ω R_DS(on) allow stable current regulation in precision sink applications, provided power dissipation remains within the 2.0 W PCB-mount limit and thermal design avoids secondary breakdown.

IRFL110TR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 900mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL110TR FAQ

1.How can I place an order for IRFL110TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL110TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL110TR reliable?

The price and inventory of IRFL110TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL110TR is usually 5 days.

3.What payment methods are accepted for IRFL110TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL110TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL110TR?

IRFL110TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL110TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL110TR?

For technical support, including IRFL110TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL110TR requirements.

6.How does Aetrix verify that IRFL110TR is sourced from the original manufacturer or authorized distributors?

All IRFL110TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL110TR meets industry standards.

7.What is the process for return or replacement of IRFL110TR?

All IRFL110TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFL110TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL110TR part is unused and in its original packaging.

Return procedure for IRFL110TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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