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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFL110TRPBF-BE3

Name: IRFL110TRPBF-BE3
Brand: Vishay Siliconix
SKU: IRFL110TRPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL110TRPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL110TRPBF-BE3.pdf

Description:: MOSFET N-CH 100V 1.5A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFL110TRPBF-BE3 from Vishay Siliconix is a 100 V, 1.5 A N-channel power MOSFET in SOT-223 package, with R_DS(on) = 0.54 Ω at V_GS = 10 V, Q_g = 8.3 nC, and repetitive avalanche rated to 0.31 mJ - used in low-power DC-DC converters and load switching circuits.

For engineers reviewing the IRFL110TRPBF-BE3 datasheet, IRFL110TRPBF-BE3 pinout, IRFL110TRPBF-BE3 application, or IRFL110TRPBF-BE3 equivalent, key selection criteria include its surface-mount SOT-223 thermal performance (2.0 W PCB mount), fast switching (t_r = 16 ns), dynamic dV/dt rating (5.5 V/ns), and gate drive simplicity for 3.3 V/5 V logic-compatible control.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for ruggedness and fast switching in low-current, medium-voltage applications. Its design integrates a low-inductance source (L_S = 6.0 nH) and drain (L_D = 4.0 nH) structure to minimize ringing during hard-switching transients.

The device supports unclamped inductive switching with validated avalanche energy (E_AS = 150 mJ single-pulse, I_AR = 1.5 A repetitive), and features a body diode with t_rr = 100–200 ns and Q_rr = 0.44–0.88 μC - critical for synchronous rectification and flyback snubberless designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for voltage spikes in industrial power supplies
R_DS(on)	0.54 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 1.5 A continuous current in compact SOT-223 layout
Q_g	8.3 nC - allows efficient gate driving with standard logic-level drivers (e.g., TC4427) without external buffering
t_r/t_f	16 ns / 9.4 ns - reduces switching losses below 500 kHz operation in PWM-controlled loads
E_AS	150 mJ - sustains single-event inductive energy dump without failure in relay or solenoid driver circuits
T_J Range	–55 °C to +150 °C - qualified for extended temperature operation in automotive body electronics and industrial controls

Pinout & Package

SOT-223 package with exposed drain tab for enhanced thermal conduction; footprint compatible with JEDEC TO-261AA, enabling direct PCB heatsinking on FR-4 boards (R_thJA = 60 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V gate drive to fully enhance channel; threshold V_GS(th) = 2.0–4.0 V ensures reliable turn-on with 3.3 V logic
D (Drain)	High-side power terminal	Connected to exposed metal tab - must be electrically isolated from heatsink unless referenced to system ground
S (Source)	Return path and reference node	Serves as local ground reference for gate drive; internal L_S = 6.0 nH affects high-speed gate loop stability

Key Features

Feature	Design Value
Surface-mount SOT-223 package	Enables automated assembly and delivers >2.0 W power dissipation on 1"² FR-4 PCB without external heatsink
Dynamic dV/dt rating	5.5 V/ns - prevents false turn-on during high-slew-rate voltage transients in motor drive half-bridges
Repetitive avalanche capability	0.31 mJ per pulse - allows safe operation under inductive load interruption without snubber networks
Low gate charge	Q_g = 8.3 nC - reduces gate driver power consumption and enables higher-frequency PWM in space-constrained designs
Fast body diode recovery	t_rr = 100–200 ns - minimizes reverse recovery losses when used as freewheeling diode in buck regulators

Applications

DC-DC Converter Switch	Load Switch for Industrial I/O
Use Scenario: Step-down regulator in 24 V industrial PLC module delivering 5 V/1 A to microcontroller peripherals. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 300 kHz with forced CCM mode. Use Value: R_DS(on) = 0.54 Ω limits conduction loss to 0.81 W; Q_g = 8.3 nC enables clean 10 V gate transitions using integrated controller's gate driver.	Use Scenario: Controlled power enable for 12 V sensor bus in factory automation cabinet. IC Role / Device Role / Timing Role: Low-side load switch activated by FPGA GPIO with soft-start via RC gate network. Use Value: V_GS(th) = 2.0–4.0 V ensures full enhancement at 3.3 V logic; dV/dt immunity prevents spurious turn-on during EMI events.
Relay/Solenoid Driver	Flyback Snubberless Output Stage
Use Scenario: Driving 24 V/500 mA DC solenoid in HVAC actuator with PWM modulation for position control. IC Role / Device Role / Timing Role: Unclamped inductive switch subjected to repetitive avalanche stress during de-energization. Use Value: E_AS = 150 mJ and I_AR = 1.5 A allow repeated energy absorption without derating or external clamping diodes.	Use Scenario: Secondary-side active clamp in isolated 12 V output flyback for medical power supply. IC Role / Device Role / Timing Role: Freewheeling path using intrinsic body diode during transformer reset phase. Use Value: Q_rr = 0.44–0.88 μC and t_rr = 100–200 ns reduce switching loss and EMI compared to discrete Schottky alternatives.

DC-DC Converter Switch

Load Switch for Industrial I/O

Use Scenario: Step-down regulator in 24 V industrial PLC module delivering 5 V/1 A to microcontroller peripherals.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 300 kHz with forced CCM mode.

Use Value: R_DS(on) = 0.54 Ω limits conduction loss to 0.81 W; Q_g = 8.3 nC enables clean 10 V gate transitions using integrated controller's gate driver.

Use Scenario: Controlled power enable for 12 V sensor bus in factory automation cabinet.

IC Role / Device Role / Timing Role: Low-side load switch activated by FPGA GPIO with soft-start via RC gate network.

Use Value: V_GS(th) = 2.0–4.0 V ensures full enhancement at 3.3 V logic; dV/dt immunity prevents spurious turn-on during EMI events.

Relay/Solenoid Driver

Flyback Snubberless Output Stage

Use Scenario: Driving 24 V/500 mA DC solenoid in HVAC actuator with PWM modulation for position control.

IC Role / Device Role / Timing Role: Unclamped inductive switch subjected to repetitive avalanche stress during de-energization.

Use Value: E_AS = 150 mJ and I_AR = 1.5 A allow repeated energy absorption without derating or external clamping diodes.

Use Scenario: Secondary-side active clamp in isolated 12 V output flyback for medical power supply.

IC Role / Device Role / Timing Role: Freewheeling path using intrinsic body diode during transformer reset phase.

Use Value: Q_rr = 0.44–0.88 μC and t_rr = 100–200 ns reduce switching loss and EMI compared to discrete Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFL110TR-BE3	Same die, identical R_DS(on), Q_g, and avalanche specs; differs only in marking code (FB vs. FJ) and manufacturing location	No functional difference; approved for same industrial temperature range and PCB-mount thermal profile	Select SiHFL110TR-BE3 if dual-sourcing or alternate logistics chain required without design change
IRFL9110TRPBF-BE3	P-channel counterpart: V_DS = –100 V, R_DS(on) = 0.90 Ω @ V_GS = –10 V, lower ID (1.2 A), same SOT-223 package	Used in high-side switch configurations where gate drive referenced to load is preferred over low-side sensing	Choose IRFL9110TRPBF-BE3 only for complementary high-side topology - not drop-in replacement

Compared with IRFL110TRPBF-BE3, SiHFL110TR-BE3 offers identical electrical and thermal behavior with no layout or BOM impact, while IRFL9110TRPBF-BE3 serves a fundamentally different circuit role requiring gate drive polarity reversal and revised current handling assumptions.

Availability

IRFL110TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial power supplies, programmable logic controller (PLC) I/O modules, and embedded DC-DC converter designs requiring stable component supply across multi-year production cycles.

Supply support for IRFL110TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedized packaging.

The IRFL110 product line targets cost-sensitive, surface-mount power switching applications demanding robust avalanche performance and simplified gate drive - especially in industrial control and distributed power systems.

FAQ

What is the maximum continuous drain current for IRFL110TRPBF-BE3 at 100 °C case temperature?

The maximum continuous drain current for IRFL110TRPBF-BE3 is 0.96 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-223 package under sustained power dissipation; operation above this current requires active cooling or reduced duty cycle to maintain junction temperature ≤ 150 °C.

Does IRFL110TRPBF-BE3 support logic-level gate drive?

IRFL110TRPBF-BE3 has a gate threshold voltage V_GS(th) of 2.0–4.0 V, enabling partial enhancement with 3.3 V logic, but full enhancement (R_DS(on) = 0.54 Ω) requires V_GS = 10 V. It is not a true logic-level MOSFET; for 3.3 V-only drive, consider Vishay's SI2300 or similar dedicated logic-level parts.

What is the thermal resistance from junction to ambient for IRFL110TRPBF-BE3 mounted on a PCB?

When mounted on a 1" square FR-4 PCB, IRFL110TRPBF-BE3 has a maximum junction-to-ambient thermal resistance R_thJA of 60 °C/W. This value assumes standard copper pour and no additional heatsinking; actual performance improves with larger copper areas or thermal vias under the drain tab.

Can IRFL110TRPBF-BE3 be used in avalanche mode repeatedly?

Yes - IRFL110TRPBF-BE3 is explicitly rated for repetitive avalanche operation with E_AR = 0.31 mJ per pulse. This capability is validated per test condition in Figure 11 of the datasheet and allows safe use in inductive load switching without external snubbers, provided pulse width and duty cycle remain within limits defined by junction temperature rise.

What is the body diode forward voltage of IRFL110TRPBF-BE3 at 1.5 A and 25 °C?

The body diode forward voltage V_SD of IRFL110TRPBF-BE3 is 2.5 V maximum at I_S = 1.5 A and T_J = 25 °C. This relatively high V_SD reflects the trade-off between ruggedness and conduction loss; it is suitable for infrequent freewheeling but not continuous synchronous rectification.

IRFL110TRPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 900mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL110TRPBF-BE3 FAQ

1.How can I place an order for IRFL110TRPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL110TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL110TRPBF-BE3 reliable?

The price and inventory of IRFL110TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL110TRPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFL110TRPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL110TRPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL110TRPBF-BE3?

IRFL110TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL110TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL110TRPBF-BE3?

For technical support, including IRFL110TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL110TRPBF-BE3 requirements.

6.How does Aetrix verify that IRFL110TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFL110TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL110TRPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFL110TRPBF-BE3?

All IRFL110TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL110TRPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL110TRPBF-BE3 part is unused and in its original packaging.

Return procedure for IRFL110TRPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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