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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFL210

Name: IRFL210
Brand: Vishay Siliconix
SKU: IRFL210
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL210

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL210.pdf

Description:: MOSFET N-CH 200V 960MA SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFL210 from Vishay Siliconix is a 200 V, 0.96 A N-channel enhancement-mode power MOSFET in SOT-223 package, featuring 1.5 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating. It serves as a low-power switching device in DC-DC converters, LED drivers, and load-switching circuits where surface-mount reliability and thermal performance are critical.

For engineers reviewing the IRFL210 datasheet, IRFL210 pinout, IRFL210 application, or IRFL210 equivalent, key selection criteria include its 200 V drain-source breakdown voltage, 1.5 Ω on-resistance at 10 V gate drive, 50 mJ single-pulse avalanche energy, SOT-223 thermal design compatibility, and fast 8.2 ns turn-on delay for efficient low-current switching.

Technical Context

The IRFL210 employs a third-generation silicon process optimized for ruggedized switching with dynamic dV/dt immunity up to 5.0 V/ns and built-in body diode recovery (trr = 150–310 ns). Its gate threshold voltage range of 2.0–4.0 V ensures stable turn-on under varying bias conditions while maintaining logic-level compatibility when driven with ≥5 V.

Thermal design leverages the SOT-223's enlarged drain tab: junction-to-ambient resistance is 40 °C/W on 1"² FR-4 PCB, enabling >2.0 W dissipation without external heatsink. Repetitive avalanche capability (EAR = 0.31 mJ) supports unclamped inductive switching in flyback and relay-driving topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands transient overvoltage up to rated breakdown in DC-DC primary-side or industrial control bus applications.
R_DS(on)	1.5 Ω @ V_GS = 10 V - Delivers <1.5 W conduction loss at 0.96 A continuous drain current, suitable for low-duty-cycle switching.
Q_g	8.2 nC - Enables fast switching with moderate gate drive strength; compatible with standard microcontroller GPIO or low-power drivers.
E_AS	50 mJ - Supports robust unclamped inductive turn-off in relay, solenoid, or transformer-driven circuits without snubber.
T_J Range	−55 to +150 °C - Qualified for extended industrial temperature operation in enclosed or thermally constrained environments.
dV/dt Rating	5.0 V/ns - Resists false triggering during high-slew-rate noise transients in motor control or power supply feedback paths.

Pinout & Package

SOT-223 package with exposed drain tab for thermal conduction; 3-pin configuration (G, D, S), lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 0–10 V logic-level signal; 100 nA max leakage enables high-impedance drive and low standby current.
D (Drain)	High-side switched output	Connected to load or supply rail; tab is electrically tied to drain and serves as primary thermal path to PCB copper.
S (Source)	Reference return	Provides ground reference for gate drive and current sensing; internal source inductance of 6.0 nH affects high-speed switching ringing.

Key Features

Feature	Design Value
Surface-mount SOT-223 package	Enables automated assembly and improves thermal transfer vs. SO-8 or TO-92; 6.7 mm × 3.5 mm footprint fits dense PCB layouts.
Repetitive avalanche rated	Supports reliable operation in inductive load switching without external protection components, reducing BOM count in relay drivers.
Dynamic dV/dt immunity	5.0 V/ns rating prevents spurious turn-on during fast voltage transients, enhancing noise immunity in shared power rails.
Low Q_gd/Q_g ratio	4.5/8.2 ≈ 55% - Reduces Miller effect, improving switching stability and reducing gate drive power in PWM applications.

Applications

LED Driver Control	DC-DC Converter Switch
Use Scenario: Constant-current switching for indicator LEDs and status lighting in industrial HMIs and instrumentation panels. IC Role / Device Role / Timing Role: Low-side switch controlling LED anode current via PWM duty cycle; operates at 1–10 kHz with minimal thermal rise. Use Value: 1.5 Ω R_DS(on) limits I²R loss to <1.4 W at 0.96 A peak, enabling compact layout without heatsink on FR-4 PCB.	Use Scenario: Primary-side synchronous rectifier or auxiliary switch in isolated flyback converters for AC-DC adapters. IC Role / Device Role / Timing Role: High-voltage switching element handling 100–200 V input transients with controlled dv/dt during turn-off. Use Value: 50 mJ E_AS absorbs inductive energy during unclamped turn-off, eliminating need for clamping diodes in cost-sensitive designs.
Load Switching	Relay/Solenoid Driver
Use Scenario: Power sequencing and enable control for peripheral modules in embedded systems requiring soft-start and fault isolation. IC Role / Device Role / Timing Role: High-side or low-side load switch activated by MCU GPIO; configured with external resistor for current limiting. Use Value: 0.96 A continuous rating and 7.7 A pulsed capability support diverse 5–24 V loads including sensors, fans, and communication ICs.	Use Scenario: Driving 12 V or 24 V electromagnetic relays and small solenoids in programmable logic controllers and HVAC controls. IC Role / Device Role / Timing Role: Inductive load switch with integrated body diode providing freewheeling path during de-energization. Use Value: Body diode reverse recovery time (150–310 ns) and Q_rr (0.60–1.4 μC) minimize voltage overshoot and EMI during coil collapse.

LED Driver Control

DC-DC Converter Switch

Use Scenario: Constant-current switching for indicator LEDs and status lighting in industrial HMIs and instrumentation panels.

IC Role / Device Role / Timing Role: Low-side switch controlling LED anode current via PWM duty cycle; operates at 1–10 kHz with minimal thermal rise.

Use Value: 1.5 Ω R_DS(on) limits I²R loss to <1.4 W at 0.96 A peak, enabling compact layout without heatsink on FR-4 PCB.

Use Scenario: Primary-side synchronous rectifier or auxiliary switch in isolated flyback converters for AC-DC adapters.

IC Role / Device Role / Timing Role: High-voltage switching element handling 100–200 V input transients with controlled dv/dt during turn-off.

Use Value: 50 mJ E_AS absorbs inductive energy during unclamped turn-off, eliminating need for clamping diodes in cost-sensitive designs.

Load Switching

Relay/Solenoid Driver

Use Scenario: Power sequencing and enable control for peripheral modules in embedded systems requiring soft-start and fault isolation.

IC Role / Device Role / Timing Role: High-side or low-side load switch activated by MCU GPIO; configured with external resistor for current limiting.

Use Value: 0.96 A continuous rating and 7.7 A pulsed capability support diverse 5–24 V loads including sensors, fans, and communication ICs.

Use Scenario: Driving 12 V or 24 V electromagnetic relays and small solenoids in programmable logic controllers and HVAC controls.

IC Role / Device Role / Timing Role: Inductive load switch with integrated body diode providing freewheeling path during de-energization.

Use Value: Body diode reverse recovery time (150–310 ns) and Q_rr (0.60–1.4 μC) minimize voltage overshoot and EMI during coil collapse.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFL210TR-GE3	Same die, identical electrical specs; differs only in tape-and-reel packaging (GE3 vs BE3) and alternate manufacturing location.	No functional difference; fully interchangeable in all circuit roles and thermal environments.	Select based on distributor availability and RoHS compliance documentation requirements.
IRFL9110	200 V, 0.45 A, R_DS(on) = 3.5 Ω @ 10 V - lower current rating and higher on-resistance than IRFL210.	Not suitable for 0.96 A continuous loads; limited to sub-500 mA applications with higher conduction loss.	Choose only if lower gate charge (5.5 nC) or legacy qualification is required; verify thermal margin at target current.

Compared with SiHFL210TR-GE3, IRFL210 offers identical performance but different packaging logistics; versus IRFL9110, IRFL210 delivers 2.1× higher continuous current and 2.3× lower R_DS(on), making it preferable for thermally constrained 0.96 A switching nodes.

Availability

IRFL210 is available at Aetrix Electronics and suitable for LED driver control, DC-DC converter switching, and relay/solenoid driving applications requiring stable component supply across industrial and embedded product lifecycles.

Supply support for IRFL210 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal efficiency.

The IRFL210 belongs to Vishay's third-generation high-voltage SOT-223 MOSFET family, engineered for surface-mount switching in space-constrained industrial and consumer power systems where avalanche robustness and ease of paralleling matter.

FAQ

What is the maximum continuous drain current for IRFL210 at 100 °C case temperature?

The IRFL210 supports 0.6 A continuous drain current at T_C = 100 °C, derated linearly from 0.96 A at 25 °C using a 0.025 W/°C factor. This value reflects thermal limits of the SOT-223 package on standard PCB mounting; actual current capability depends on board copper area and airflow. The IRFL210 must be operated within this limit to avoid exceeding 150 °C maximum junction temperature.

Does IRFL210 have a built-in body diode, and what are its key parameters?

Yes, the IRFL210 integrates a body diode with 0.96 A continuous forward current rating (I_S) and 7.7 A pulsed capability (I_SM). At T_J = 25 °C and I_S = 0.96 A, V_SD is ≤2.0 V. Its reverse recovery time (t_rr) ranges from 150 to 310 ns, and Q_rr is 0.60–1.4 μC - values critical for minimizing voltage spikes in inductive switching. These parameters are confirmed in the IRFL210 datasheet section "Drain-Source Body Diode Characteristics".

Can IRFL210 be used in avalanche mode, and what energy level is rated?

Yes, the IRFL210 is repetitively avalanche rated with 0.31 mJ per pulse (E_AR) and 50 mJ single-pulse capability (E_AS). The 50 mJ rating assumes V_DD = 50 V, L = 81 mH, R_G = 25 Ω, and I_AS = 0.96 A per Figure 12. Operation in avalanche requires strict adherence to pulse width and duty cycle limits defined in the IRFL210 datasheet to prevent junction overheating.

What is the gate threshold voltage range for IRFL210, and how does it affect drive requirements?

The IRFL210 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This allows reliable turn-on with 5 V logic signals but requires ≥10 V for full enhancement and minimal R_DS(on). Gate leakage is ≤±100 nA at ±20 V, enabling high-impedance drive. The IRFL210 thus balances logic-level usability with optimal conduction performance when driven at 10 V.

How does the SOT-223 package of IRFL210 improve thermal performance compared to smaller packages?

The IRFL210's SOT-223 package features an enlarged drain tab that provides direct thermal conduction to the PCB, achieving 40 °C/W junction-to-ambient resistance on a 1"² FR-4 board - significantly better than SOT-23 or TO-92. This enables >2.0 W power dissipation without external heatsink. The IRFL210's thermal advantage is validated in Vishay's datasheet Figure 9 and Thermal Resistance Ratings table, supporting higher current density in compact designs.

IRFL210 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 960mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 580mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL210 FAQ

1.How can I place an order for IRFL210 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL210 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL210 reliable?

The price and inventory of IRFL210 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL210 is usually 5 days.

3.What payment methods are accepted for IRFL210?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL210 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL210?

IRFL210 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL210 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL210?

For technical support, including IRFL210 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL210 requirements.

6.How does Aetrix verify that IRFL210 is sourced from the original manufacturer or authorized distributors?

All IRFL210 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL210 meets industry standards.

7.What is the process for return or replacement of IRFL210?

All IRFL210 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL210, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL210 part is unused and in its original packaging.

Return procedure for IRFL210:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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