Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFL210PBF

Part No.:
IRFL210PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRFL210PBF.pdf
Description:
MOSFET N-CH 200V 960MA SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,057

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFL210PBF from Vishay Siliconix is a 200 V, 0.96 A N-channel surface-mount power MOSFET in SOT-223 package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for low-power DC-DC converters, LED drivers, and load-switching circuits.

For engineers reviewing the IRFL210PBF datasheet, IRFL210PBF pinout, IRFL210PBF application, or IRFL210PBF equivalent, key selection criteria include its 200 V drain-source breakdown voltage, thermal performance on PCB mount (RthJA = 40 °C/W), fast switching (tr = 17 ns), body diode recovery time (trr = 150–310 ns), and lead-free/halogen-free compliance per Vishay's S21-0322-Rev. F specification.

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve ruggedized avalanche capability and stable RDS(on) over temperature (0.30 V/°C coefficient). Its SOT-223 package integrates an enlarged drain tab for enhanced heatsinking-enabling >1.25 W dissipation on standard FR-4 PCBs without external heatsink.

The device supports simple gate drive (VGS(th) = 2.0–4.0 V), exhibits low dynamic losses (Ciss = 140 pF, Coss = 53 pF), and is characterized for unclamped inductive switching with EAS = 50 mJ at TJ = 25 °C-making it suitable for snubberless flyback and relay-driving topologies where transient robustness is critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDS200 V - supports input rails up to 160 V DC with margin for transients in industrial power supplies
RDS(on) @ VGS = 10 V1.5 Ω - enables <1.5 W conduction loss at 0.96 A continuous current
Qg8.2 nC - allows efficient 5–12 V gate driving with <1 µs turn-on delay (td(on) = 8.2 ns)
ID (TC = 25 °C)0.96 A - defines maximum steady-state current under ideal heatsinking conditions
EAS50 mJ - specifies single-pulse avalanche energy handling without failure at TJ = 25 °C
trr150–310 ns - determines minimum dead-time requirements in synchronous rectifier or half-bridge configurations
RthJA (PCB mount)40 °C/W - sets thermal rise of 40 °C per watt on 1" square FR-4 board, limiting practical continuous power to ~2.0 W

Pinout & Package

SOT-223 package with exposed drain tab (pin 2) for thermal conduction and mechanical anchoring; standardized 4-pin layout compatible with automated pick-and-place and vapor-phase reflow.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal requiring ≤±20 V bias; low input capacitance (Ciss = 140 pF) minimizes driver loading
2 (D)DrainMain high-side power terminal; electrically and thermally connected to large copper tab for PCB heat spreading
3 (S)SourcePower return path and gate reference; internal source inductance LS = 6.0 nH affects high-dI/dt switching behavior
4 (S)Source (redundant)Second source connection for lower parasitic inductance and improved current sharing in parallel configurations

Key Features

FeatureDesign Value
Repetitive avalanche ratedEnables reliable operation under inductive turn-off stress (EAR = 0.31 mJ) without derating in relay/snubberless designs
Dynamic dV/dt rating5.0 V/ns immunity prevents false turn-on during high-slew-rate voltage transients in motor or solenoid drives
Fast switchingCombined tr + tf = 25.9 ns reduces switching losses below 500 kHz in SMPS applications
Surface-mount SOT-223Enables compact, automated assembly while delivering >2× thermal performance vs. standard SOT-23 packages
Low Qgd/Qg ratio4.5/8.2 ≈ 55% - improves Miller immunity and hard-switching robustness in high-frequency converters

Applications

LED Constant-Current DriverIndustrial Load Switch

Use Scenario: Driving 12–48 V LED strings in signage or indicator panels with PWM dimming.

IC Role / Device Role / Timing Role: Low-side switch controlling LED current path; operates in linear or saturated switching mode.

Use Value: 200 V rating accommodates surge-prone 48 V bus; 1.5 Ω RDS(on) limits self-heating at 0.96 A, enabling compact thermal design.

Use Scenario: Enabling/disabling 24 V DC power rails for sensors, actuators, or communication modules.

IC Role / Device Role / Timing Role: High-reliability power switch with integrated body diode for reverse polarity protection.

Use Value: Repetitive avalanche rating ensures survival during hot-plug or cable-disconnect events without external clamping.

Low-Power Flyback ConverterSmart Home Relay Replacement

Use Scenario: Primary-side switch in sub-10 W isolated AC-DC adapters for IoT devices.

IC Role / Device Role / Timing Role: Self-oscillating or controller-driven main switch; handles unclamped inductive energy during demagnetization.

Use Value: 50 mJ single-pulse avalanche energy eliminates need for snubber networks, reducing BOM count and board space.

Use Scenario: Solid-state replacement for electromechanical relays in HVAC controls or lighting systems.

IC Role / Device Role / Timing Role: Bidirectional switching element with body diode conducting freewheel current during coil de-energization.

Use Value: 310 ns max body diode reverse recovery time ensures clean turn-off in 10–100 Hz switching cycles without voltage overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SiHFL210TR-GE3Same die, identical electrical specs; differs only in tape-and-reel packaging and halogen-free compliance labelingNo functional difference; suitable for same PCB layouts and thermal environmentsSelect when RoHS/REACH documentation traceability or JEDEC-compliant reel packaging is required
IRFL9110PBF200 V, but P-channel with −0.96 A rating and higher RDS(on) (2.5 Ω); complementary topology requirementRequires high-side gate drive and inverted logic control; not drop-in compatibleChoose only for high-side switching where level-shifting is acceptable and bidirectional blocking is needed

Compared with SiHFL210TR-GE3, IRFL210PBF shares full parametric equivalence but differs in packaging logistics; versus IRFL9110PBF, it offers lower conduction loss and simpler drive but requires low-side configuration-making IRFL210PBF optimal for cost-sensitive, space-constrained DC-DC and load-switching designs.

Availability

IRFL210PBF is available at Aetrix Electronics and suitable for LED drivers, industrial load switches, and low-power flyback converters requiring stable component supply, long-term manufacturability, and lead-free compliance.

Supply support for IRFL210PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFL210PBF belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for ruggedness, fast switching, and thermal efficiency in space-constrained power management applications.

FAQ

What is the maximum continuous drain current for IRFL210PBF at 100 °C case temperature?

The IRFL210PBF supports 0.6 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-223 package under real-world PCB mounting conditions-not ambient temperature. Designers must verify junction temperature using RthJC = 60 °C/W and actual power dissipation to ensure safe operation within the −55 to +150 °C range.

Does IRFL210PBF have avalanche capability, and how is it rated?

Yes, IRFL210PBF is repetitively avalanche rated with EAR = 0.31 mJ and single-pulse EAS = 50 mJ at TJ = 25 °C. These values are measured under defined test conditions (VDD = 50 V, L = 81 mH, IAS = 0.96 A) and reflect guaranteed energy-handling capacity without device degradation-critical for inductive load switching and snubberless flyback designs where IRFL210PBF serves as the primary power switch.

What is the gate threshold voltage range for IRFL210PBF, and how does it affect drive compatibility?

The IRFL210PBF has a gate-source threshold voltage VGS(th) of 2.0–4.0 V at ID = 250 μA, making it compatible with standard 3.3 V and 5 V logic-level drivers. However, full enhancement (RDS(on) = 1.5 Ω) requires VGS ≥ 10 V. For reliable saturation in low-voltage systems, designers should confirm gate drive strength and consider the 1.8 nC Qgs to avoid slow turn-on that could increase switching losses in the IRFL210PBF.

Can IRFL210PBF be paralleled with other units, and what design considerations apply?

Yes, IRFL210PBF is designed for ease of paralleling due to its positive RDS(on) temperature coefficient and matched threshold characteristics across production lots. To ensure current sharing, use symmetrical PCB layout, individual gate resistors (≤25 Ω), and minimize source inductance differences. The dual-source pin (pins 3 and 4) further reduces loop inductance-critical when paralleling multiple IRFL210PBF units in high-current load-switching applications.

What is the body diode reverse recovery performance of IRFL210PBF, and why does it matter?

The IRFL210PBF body diode exhibits trr = 150–310 ns and Qrr = 0.60–1.4 μC at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. This performance directly impacts switching losses and voltage overshoot in hard-commutated topologies like buck converters or half-bridges. Fast recovery minimizes cross-conduction risk and reduces need for external Schottky catch diodes-enhancing efficiency and reliability in designs where IRFL210PBF operates with intrinsic diode conduction.

IRFL210PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
960mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 580mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta), 3.1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRFL210PBF FAQ

1.How can I place an order for IRFL210PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL210PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL210PBF reliable?

The price and inventory of IRFL210PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL210PBF is usually 5 days.

3.What payment methods are accepted for IRFL210PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL210PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL210PBF?

IRFL210PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL210PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL210PBF?

For technical support, including IRFL210PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL210PBF requirements.

6.How does Aetrix verify that IRFL210PBF is sourced from the original manufacturer or authorized distributors?

All IRFL210PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL210PBF meets industry standards.

7.What is the process for return or replacement of IRFL210PBF?

All IRFL210PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFL210PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL210PBF part is unused and in its original packaging.

Return procedure for IRFL210PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFL210PBF Tags

  • IRFL210PBF
  • IRFL210PBF PDF
  • IRFL210PBF Datasheet
  • IRFL210PBF Specifications
  • IRFL210PBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRFL210PBF
  • Buy IRFL210PBF
  • IRFL210PBF Price
  • IRFL210PBF Distributor
  • IRFL210PBF Supplier
  • IRFL210PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER