Vishay Siliconix IRFL210TR

Overview

IRFL210TR from Vishay Siliconix is a surface-mount N-channel enhancement-mode power MOSFET in SOT-223 package, rated for 200 V drain-source voltage, 1.5 Ω R_DS(on) at V_GS = 10 V, and 0.96 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is commonly used in low-power DC-DC converters and LED driver circuits.

For engineers reviewing the IRFL210TR datasheet, IRFL210TR pinout, IRFL210TR application, or IRFL210TR equivalent, key selection criteria include its 200 V breakdown rating, 8.2 nC total gate charge, SOT-223 thermal performance (R_thJA = 40 °C/W on PCB mount), body diode recovery time (150–310 ns), and ±20 V gate-source voltage tolerance.

Technical Context

This MOSFET employs planar V-groove silicon technology optimized for high-voltage, low-current switching. Its dynamic dV/dt rating of 5.0 V/ns and unclamped inductive switching capability (E_AS = 50 mJ) support robust operation in inductive load environments without external snubbers.

The device features integrated body diode with 2.0 V forward drop at 0.96 A and reverse recovery charge Q_rr of 0.60–1.4 μC. Gate drive simplicity is enabled by low threshold voltage (2.0–4.0 V) and modest 8.2 nC total gate charge, allowing direct interface with microcontroller GPIOs or low-power drivers.

Key Specifications

Pinout & Package

SOT-223 package with exposed drain tab for enhanced thermal conduction; footprint compatible with automated pick-and-place; recommended mounting on ≥1"² FR-4 PCB for rated 2.0 W power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRFL210TR, SiHFL210TR-GE3 offers identical electrical and thermal performance with alternate packaging logistics, while IRFL9110TRPBF trades higher gate charge and price for significantly lower conduction loss - making IRFL210TR optimal for cost-sensitive, moderate-current, fast-switching roles.

Availability

IRFL210TR is available at Aetrix Electronics and suitable for LED drivers, low-power DC-DC converters, and microcontroller-peripheral switching requiring stable component supply and long-term obsolescence management.

Supply support for IRFL210TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFL210TR belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for cost-effective, thermally efficient switching in space-constrained industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current for IRFL210TR at 100 °C case temperature?

The IRFL210TR supports 0.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-223 package under sustained high-temperature operation; designers must ensure adequate PCB copper area or airflow to maintain junction temperature below 150 °C. The IRFL210TR's linear derating factor is 0.025 W/°C above 25 °C case temperature.

Does IRFL210TR have a built-in body diode, and what are its key parameters?

Yes, the IRFL210TR integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 2.0 V forward voltage at 0.96 A and 25 °C, reverse recovery time of 150–310 ns, and reverse recovery charge of 0.60–1.4 μC. These values are measured under standardized conditions (T_J = 25 °C, I_F = 3.3 A, dI/dt = 100 A/μs) and directly impact performance in freewheeling or synchronous rectification roles.

Can IRFL210TR be driven directly from a 3.3 V microcontroller GPIO?

Yes, the IRFL210TR can be driven directly from a 3.3 V microcontroller GPIO due to its gate threshold voltage range of 2.0–4.0 V and low gate charge (8.2 nC). At 3.3 V, it achieves partial enhancement sufficient for low-duty-cycle or low-current applications; however, full R_DS(on) specification (1.5 Ω) requires V_GS ≥ 10 V. For robust switching at full rated current, a gate driver or level shifter is recommended. The IRFL210TR's 100 nA gate leakage also minimizes drive current burden.

What is the thermal resistance from junction to ambient for IRFL210TR in standard PCB mounting?

The IRFL210TR has a maximum junction-to-ambient thermal resistance (R_thJA) of 40 °C/W when mounted on a 1" square FR-4 PCB, per the Thermal Resistance Ratings table. This value assumes no additional heatsinking and defines the worst-case temperature rise under 2.0 W power dissipation. For higher power, the exposed drain tab must be soldered to a larger copper area or external heatsink to reduce effective R_thJA. The IRFL210TR's R_thJC is 60 °C/W, indicating its thermal bottleneck lies in the PCB interface, not the die-to-tab path.

Is IRFL210TR suitable for avalanche energy handling in unclamped inductive switching?

Yes, the IRFL210TR is explicitly rated for repetitive avalanche operation with E_AR = 0.31 mJ and single-pulse avalanche energy E_AS = 50 mJ (tested per Fig. 12). This makes it suitable for driving inductive loads like relays or solenoids where flyback energy must be absorbed internally. The IRFL210TR's avalanche current rating is 0.96 A, and safe operation requires adherence to pulse width and duty cycle limits defined in the datasheet to prevent junction overheating.