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Vishay Siliconix IRFL210TRPBF-BE3

Part No.:
IRFL210TRPBF-BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRFL210TRPBF-BE3.pdf
Description:
MOSFET N-CH 200V 960MA SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,263

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Product details

Overview

IRFL210TRPBF-BE3 from Vishay Siliconix is a 200 V, 0.96 A N-channel power MOSFET in SOT-223 package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for low-power DC-DC converters, LED drivers, and load switching in industrial control modules.

For engineers reviewing the IRFL210TRPBF-BE3 datasheet, IRFL210TRPBF-BE3 pinout, IRFL210TRPBF-BE3 application, or IRFL210TRPBF-BE3 equivalent, key selection criteria include its 200 V drain-source voltage rating, thermal performance on PCB mount (RthJA = 40 °C/W), fast switching (tr = 17 ns), and surface-mount compatibility with vapor-phase and wave soldering.

Technical Context

This device implements a third-generation planar VDMOS structure optimized for ruggedness and fast switching in low-current, high-voltage switching applications. Its dynamic dV/dt rating of 5.0 V/ns and unclamped inductive switching capability (EAS = 50 mJ) support reliable operation under transient stress conditions without external snubbers.

The SOT-223 package integrates an enlarged drain tab for enhanced heatsinking, enabling >1.25 W power dissipation in standard FR-4 PCB mounting. Gate drive simplicity is ensured by a 2.0–4.0 V threshold voltage and low 1.8 nC gate-source charge, supporting direct microcontroller-level interfacing without buffer stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS200 V - supports input rails up to 170 V DC in offline auxiliary supplies and industrial 24/48 V systems with margin.
RDS(on) @ VGS = 10 V1.5 Ω - limits conduction loss to ≤0.87 W at 0.96 A continuous current, suitable for thermally constrained SMT layouts.
Qg8.2 nC - enables efficient 100 kHz–500 kHz switching with <100 mW gate drive power using 5–10 Ω series resistance.
ID (TC = 25 °C)0.96 A - defines maximum steady-state current under heatsink-free PCB mounting per JEDEC JESD51-3.
EAS50 mJ - allows safe single-pulse energy absorption during inductive turn-off events without derating or clamping diodes.
dV/dt Rating5.0 V/ns - ensures immunity to parasitic turn-on in high-noise motor drive or relay coil snubber circuits.

Pinout & Package

SOT-223 package with exposed drain tab (Pin 3) for thermal conduction; standardized 4-pin layout with G–D–S–D configuration (Pin 1: Gate, Pin 2: Drain, Pin 3: Source, Pin 4: Drain). Mounting requires 1" square FR-4 PCB area for rated 2.0 W power dissipation.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal; accepts 0–10 V logic-level drive; 100 nA leakage ensures low standby current.
Pin 2DrainMain high-side switching node; electrically connected to exposed metal tab (Pin 4) for heatsinking.
Pin 3SourcePower return path; referenced to system ground in low-side configurations; hosts body diode cathode.
Pin 4Drain (Tab)Thermal and electrical extension of Pin 2; must be soldered to ≥1"² copper pour for RthJA = 40 °C/W.

Key Features

FeatureDesign Value
Repetitive avalanche ratedEnables robust operation in inductive load switching without external protection components (IAR = 0.96 A, EAR = 0.31 mJ).
Dynamic dV/dt immunity5.0 V/ns rating prevents false triggering in noisy environments such as PLC I/O modules or solenoid drivers.
Low Qgs/Qgd ratio1.8 nC / 4.5 nC ratio improves Miller immunity and reduces risk of shoot-through in half-bridge topologies.
Surface-mount optimizedSOT-223 footprint enables automated placement and reflow compatibility while delivering >2× thermal performance vs. SO-8 equivalents.

Applications

Industrial Power Supply Auxiliary RailLED Constant-Current Driver

Use Scenario: Providing isolated 12–24 V bias supply for gate drivers and controllers in 400 V DC-link inverters.

IC Role / Device Role / Timing Role: Low-side switch controlling primary-side startup resistor network during soft-start phase.

Use Value: 200 V rating withstands reflected transients; 1.5 Ω RDS(on) minimizes idle power loss in always-on auxiliary circuits.

Use Scenario: PWM dimming control of high-brightness LED strings in streetlight and signage applications.

IC Role / Device Role / Timing Role: High-side constant-current switch modulated at 1–10 kHz to regulate average LED current.

Use Value: Fast 17 ns rise time ensures precise duty-cycle fidelity; avalanche rating absorbs inductive kickback from LED string inductance.

Programmable Logic Controller Output StageDC Motor Speed Control (Small Fan/Pump)

Use Scenario: Driving 24 V solenoid valves and indicator lamps in factory automation I/O modules.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays in digital output cards.

Use Value: 0.96 A continuous current supports typical 20–500 mA loads; 50 mJ EAS eliminates need for flyback diodes across inductive coils.

Use Scenario: Open-loop speed regulation of 12–24 V brushed DC fans and miniature pumps in HVAC and medical equipment.

IC Role / Device Role / Timing Role: Low-frequency (100–500 Hz) PWM switch in high-side configuration with current-sense feedback.

Use Value: 2.0–4.0 V VGS(th) range ensures compatibility with 3.3 V and 5 V MCU GPIO; SOT-223 tab simplifies heatsinking on compact PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SiHFL210TR-GE3Same die, identical RDS(on), Qg, and avalanche specs; differs only in lead-free/halogen-free compliance (JEDEC Level 3a vs. Level 2a).Preferred for RoHS-compliant production requiring full halogen-free certification.Select SiHFL210TR-GE3 when full material declaration and halogen-free compliance are contractually mandated.
IRFL9110TRPBFLower 100 V VDS, higher 2.5 Ω RDS(on), same SOT-223 package and pinout; not avalanche-rated.Suitable only for ≤80 V DC systems where avalanche robustness is not required.Choose IRFL9110TRPBF only in cost-sensitive, low-voltage (<100 V) applications with no inductive switching stress.

Compared with SiHFL210TR-GE3 and IRFL9110TRPBF, IRFL210TRPBF-BE3 uniquely delivers 200 V capability with certified repetitive avalanche performance in the SOT-223 footprint-making it the only option for ruggedized 150–200 V industrial switching where reliability under transient overload is mandatory.

Availability

IRFL210TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial power supply auxiliary rail generation, LED constant-current driver stages, programmable logic controller output modules, and small DC motor speed control requiring stable component supply and long-term manufacturability.

Supply support for IRFL210TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal efficiency, and automotive-grade reliability.

The IRFL210TRPBF-BE3 belongs to Vishay's third-generation high-voltage SOT-223 MOSFET family, engineered specifically for space-constrained industrial control and power conversion applications demanding high-voltage tolerance and transient resilience without through-hole mounting.

FAQ

What is the maximum continuous drain current for IRFL210TRPBF-BE3 at 100 °C case temperature?

The IRFL210TRPBF-BE3 supports 0.6 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-223 package under sustained high-temperature operation and must be verified against actual board layout and ambient conditions. The IRFL210TRPBF-BE3 datasheet confirms this value applies to standard 1" square FR-4 PCB mounting per JEDEC JESD51-3.

Does IRFL210TRPBF-BE3 have a built-in body diode, and what are its key parameters?

Yes, the IRFL210TRPBF-BE3 integrates a monolithic body diode with VSD = 2.0 V at IS = 0.96 A and TJ = 25 °C, trr = 150–310 ns, and Qrr = 0.60–1.4 μC. These values are measured under standardized conditions (IF = 3.3 A, dI/dt = 100 A/μs) and define reverse recovery behavior critical for synchronous rectification and freewheeling paths. The IRFL210TRPBF-BE3 body diode is rated for continuous 0.96 A forward current.

Can IRFL210TRPBF-BE3 be used in avalanche mode, and what are the limits?

Yes, the IRFL210TRPBF-BE3 is explicitly repetitive avalanche rated with IAR = 0.96 A and EAR = 0.31 mJ per pulse, and single-pulse EAS = 50 mJ. Operation requires adherence to pulse width and duty cycle limits defined in Figure 11 and Note a of the datasheet to prevent junction temperature exceedance. The IRFL210TRPBF-BE3 avalanche capability eliminates need for external clamping in many inductive switching applications.

What is the gate threshold voltage range for IRFL210TRPBF-BE3, and how does it affect drive requirements?

The IRFL210TRPBF-BE3 has a VGS(th) range of 2.0–4.0 V at ID = 250 μA, confirming logic-level compatibility with 3.3 V and 5 V microcontrollers. Full enhancement occurs above 4.0 V, and RDS(on) is guaranteed at VGS = 10 V. This threshold range ensures reliable turn-on with standard GPIO while maintaining noise margin-critical for the IRFL210TRPBF-BE3's use in noisy industrial environments.

Is IRFL210TRPBF-BE3 compatible with lead-free reflow processes, and what is the peak temperature limit?

Yes, the IRFL210TRPBF-BE3 is lead-free and halogen-free compliant, qualified for standard Pb-free reflow with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. Its SOT-223 package meets JEDEC J-STD-020 moisture sensitivity level 1, eliminating bake requirements prior to assembly. This specification applies directly to the IRFL210TRPBF-BE3 manufacturing variant denoted by "-BE3".

IRFL210TRPBF-BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
960mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 580mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta), 3.1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRFL210TRPBF-BE3 FAQ

1.How can I place an order for IRFL210TRPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL210TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL210TRPBF-BE3 reliable?

The price and inventory of IRFL210TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL210TRPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFL210TRPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL210TRPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL210TRPBF-BE3?

IRFL210TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL210TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL210TRPBF-BE3?

For technical support, including IRFL210TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL210TRPBF-BE3 requirements.

6.How does Aetrix verify that IRFL210TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFL210TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL210TRPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFL210TRPBF-BE3?

All IRFL210TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL210TRPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL210TRPBF-BE3 part is unused and in its original packaging.

Return procedure for IRFL210TRPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFL210TRPBF-BE3 Tags

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