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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFL214

Name: IRFL214
Brand: Vishay Siliconix
SKU: IRFL214
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL214

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL214.pdf

Description:: MOSFET N-CH 250V 790MA SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:4,376

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Product details

Overview

IRFL214 from Vishay Siliconix is a 250 V, 0.79 A N-channel surface-mount power MOSFET in SOT-223 package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for low-power DC-DC converters, LED drivers, and load-switching applications where thermal performance and ruggedness are critical.

For engineers reviewing the IRFL214 datasheet, IRFL214 pinout, IRFL214 application, or IRFL214 equivalent, key selection considerations include its 250 V blocking capability, 3.1 W power dissipation at T_C = 25 °C, 4.8 V/ns peak diode recovery dV/dt rating, and compatibility with standard SOT-223 pick-and-place assembly processes.

Technical Context

The IRFL214 is a third-generation planar vertical DMOS transistor optimized for fast switching and ease of paralleling. Its design incorporates dynamic dV/dt immunity and unclamped inductive switching (UIS) robustness, with avalanche energy rated at 50 mJ (single-pulse) and 0.31 mJ (repetitive).

Thermal performance is enhanced by the SOT-223's exposed drain tab, enabling >1.25 W dissipation on FR-4 PCBs and junction-to-case thermal resistance of 40 °C/W. Gate drive is simplified by low threshold voltage (2.0–4.0 V) and modest Q_g (8.2 nC), supporting logic-level and standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - supports input rails up to 200 V DC with margin for transients in industrial and telecom power stages
R_DS(on)	2.0 Ω @ V_GS = 10 V - delivers <0.4 W conduction loss at 0.47 A continuous drain current
Q_g	8.2 nC - enables efficient 100–500 kHz switching with minimal gate driver power demand
I_D (continuous)	0.79 A @ T_C = 25 °C - suitable for sub-1 W load switching and auxiliary supply regulation
E_AS	50 mJ - withstands unclamped inductive energy in relay driving and solenoid control without failure
T_J range	−55 to +150 °C - qualified for extended temperature operation in automotive body electronics and outdoor equipment

Pinout & Package

SOT-223 package with exposed drain tab for thermal conduction; 3-pin configuration (G, D, S) with lead (Pb)-free and halogen-free construction per JEDEC TO-261AA outline.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level or standard MOSFET drive; 100 nA leakage ensures low standby current
D (Drain)	High-side power terminal	Connected to exposed copper tab; primary heat path to PCB; rated for 250 V blocking
S (Source)	Reference and return path	Common node for gate drive reference and current sensing; internal source inductance 6.0 nH affects high-dI/dt switching

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under inductive load turn-off stress without external snubbers
Dynamic dV/dt rating	4.8 V/ns immunity prevents false turn-on during high-speed switching in noisy environments
Fast switching	7 ns turn-on delay + 7.6 ns rise time supports >1 MHz PWM in compact DC-DC topologies
Surface-mount SOT-223	Compatible with automated assembly; thermal pad allows >1.25 W dissipation on 1"² FR-4 PCB
Low Q_gd/Q_g ratio	4.5/8.2 ≈ 55% - improves Miller immunity and reduces switching loss during hard commutation

Applications

LED Constant-Current Driver	Industrial Relay Driver
Use Scenario: Driving 1–3 series white LEDs from 12–24 V DC bus with analog dimming. IC Role / Device Role / Timing Role: Low-side switch controlling LED current path; operates in linear or PWM mode. Use Value: 2.0 Ω R_DS(on) limits dropout to <1 V at 500 mA, preserving headroom; avalanche rating absorbs inductive kickback from LED string parasitics.	Use Scenario: Solid-state replacement for electromechanical relays in PLC I/O modules. IC Role / Device Role / Timing Role: Load switch isolating 24 V DC control signals from field devices. Use Value: 50 mJ single-pulse avalanche energy safely clamps inductive flyback from relay coils without external diodes.
Low-Power DC-DC Converter	USB-C Power Delivery Auxiliary Switch
Use Scenario: High-side synchronous rectifier or low-side switch in 5–12 V buck converters delivering ≤1 W. IC Role / Device Role / Timing Role: Power switch in discrete step-down regulator with external controller. Use Value: 8.2 nC Q_g minimizes gate drive loss at 500 kHz; 40 °C/W R_thJC enables stable operation without heatsink.	Use Scenario: V_CONN power switch or dead-battery detection path in USB-C port controllers. IC Role / Device Role / Timing Role: Always-on, low-leakage load switch managing auxiliary power rail sequencing. Use Value: 25 μA I_DSS at 250 V ensures <1 μW standby loss; −55 to +150 °C rating supports full USB PD thermal envelope.

LED Constant-Current Driver

Industrial Relay Driver

Use Scenario: Driving 1–3 series white LEDs from 12–24 V DC bus with analog dimming.

IC Role / Device Role / Timing Role: Low-side switch controlling LED current path; operates in linear or PWM mode.

Use Value: 2.0 Ω R_DS(on) limits dropout to <1 V at 500 mA, preserving headroom; avalanche rating absorbs inductive kickback from LED string parasitics.

Use Scenario: Solid-state replacement for electromechanical relays in PLC I/O modules.

IC Role / Device Role / Timing Role: Load switch isolating 24 V DC control signals from field devices.

Use Value: 50 mJ single-pulse avalanche energy safely clamps inductive flyback from relay coils without external diodes.

Low-Power DC-DC Converter

USB-C Power Delivery Auxiliary Switch

Use Scenario: High-side synchronous rectifier or low-side switch in 5–12 V buck converters delivering ≤1 W.

IC Role / Device Role / Timing Role: Power switch in discrete step-down regulator with external controller.

Use Value: 8.2 nC Q_g minimizes gate drive loss at 500 kHz; 40 °C/W R_thJC enables stable operation without heatsink.

Use Scenario: V_CONN power switch or dead-battery detection path in USB-C port controllers.

IC Role / Device Role / Timing Role: Always-on, low-leakage load switch managing auxiliary power rail sequencing.

Use Value: 25 μA I_DSS at 250 V ensures <1 μW standby loss; −55 to +150 °C rating supports full USB PD thermal envelope.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFL214TR-GE3	Same die, alternate manufacturing location; identical electrical specs and thermal ratings	No functional difference; RoHS-compliant with same SOT-223 footprint and marking code FD	Select when requiring Vishay's GE3 tape-and-reel packaging or alternate logistics lane
IRFL9110	Lower V_DS (100 V), higher R_DS(on) (1.2 Ω), lower Q_g (5.5 nC); not avalanche-rated	Unsuitable for 200+ V bus applications; requires external flyback protection in inductive loads	Choose only for ≤100 V systems prioritizing faster switching over ruggedness

Compared with SiHFL214TR-GE3, IRFL214 offers identical performance but different logistics coding; versus IRFL9110, IRFL214 provides critical 250 V rating and UIS robustness at the cost of slightly higher gate charge-making it the sole choice for 200 V industrial switching where reliability trumps raw speed.

Availability

IRFL214 is available at Aetrix Electronics and suitable for industrial relay drivers, LED constant-current modules, and low-power DC-DC converters requiring stable component supply across long-lifecycle embedded programs.

Supply support for IRFL214 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power and signal components.

The IRFL214 belongs to Vishay's high-voltage SOT-223 MOSFET family, engineered for rugged, surface-mount power switching in space-constrained industrial and telecom applications where thermal efficiency and transient immunity are essential.

FAQ

What is the maximum continuous drain current for IRFL214 at 100 °C case temperature?

The IRFL214 supports 0.50 A continuous drain current at T_C = 100 °C, derated from 0.79 A at 25 °C using a linear factor of 0.025 W/°C. This reflects thermal limitation of the SOT-223 package under sustained power dissipation, not device degradation. Designers must verify PCB copper area and ambient conditions to maintain safe junction temperature below 150 °C in actual IRFL214 deployments.

Does IRFL214 require a gate resistor for basic switching operation?

The IRFL214 does not strictly require a gate resistor for functionality, but a 10–25 Ω series resistor is recommended to damp ringing caused by gate loop inductance and prevent oscillation during fast edge transitions. With 8.2 nC total gate charge and typical driver output impedance, omitting the resistor may cause overshoot exceeding ±20 V V_GS rating or increase EMI in sensitive IRFL214-based circuits.

Is IRFL214 suitable for use in automotive applications?

The IRFL214 is not AEC-Q101 qualified and lacks automotive-specific qualification data, though its −55 to +150 °C operating range and 250 V V_DS rating meet many under-hood voltage requirements. It is approved for industrial and telecom use only; for automotive body electronics, designers must perform full system-level validation and consider AEC-Q101 alternatives unless explicitly released for automotive by Vishay.

What is the body diode forward voltage of IRFL214 at 0.79 A?

The IRFL214 body diode forward voltage is 2.0 V maximum at T_J = 25 °C and I_S = 0.79 A with V_GS = 0 V. This relatively high V_SD indicates a non-optimized intrinsic diode, confirming that the device is intended for unidirectional switching-not synchronous rectification. In IRFL214 applications requiring reverse conduction, an external Schottky diode is advised.

Can IRFL214 be paralleled with identical units for higher current handling?

Yes, IRFL214 is explicitly designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing across multiple devices. Matching gate drive layout, equal trace lengths, and shared source routing are required. Derating total current by ≥20% is recommended to account for parametric spread; the IRFL214 datasheet confirms this capability in its FEATURES section.

IRFL214 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 790mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 470mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL214 FAQ

1.How can I place an order for IRFL214 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL214 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL214 reliable?

The price and inventory of IRFL214 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL214 is usually 5 days.

3.What payment methods are accepted for IRFL214?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL214 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL214?

IRFL214 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL214 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL214?

For technical support, including IRFL214 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL214 requirements.

6.How does Aetrix verify that IRFL214 is sourced from the original manufacturer or authorized distributors?

All IRFL214 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL214 meets industry standards.

7.What is the process for return or replacement of IRFL214?

All IRFL214 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL214, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL214 part is unused and in its original packaging.

Return procedure for IRFL214:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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