Vishay Siliconix IRFL214PBF
- Part No.:
- IRFL214PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
IRFL214PBF.pdf
- Description:
- MOSFET N-CH 250V 790MA SOT223
- Quantity:
- Payment:

- Shipping:

Inventory:6,972
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Product details
Overview
IRFL214PBF from Vishay Siliconix is a 250 V, 0.79 A N-channel surface-mount power MOSFET in SOT-223 package, featuring 2.0 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for low-power DC-DC converters, LED drivers, and load-switching circuits where thermal performance on FR-4 PCBs is critical.
For engineers reviewing the IRFL214PBF datasheet, IRFL214PBF pinout, IRFL214PBF application, or IRFL214PBF equivalent, key selection criteria include its 250 V drain-source breakdown voltage, 3.1 W maximum power dissipation at TC = 25 °C, 190–390 ns body diode reverse recovery time, and SOT-223 thermal design compatibility with standard pick-and-place assembly.
Technical Context
This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for fast switching and ruggedized unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drive, while dynamic dV/dt rating of 4.8 V/ns supports stable operation in noisy environments.
The device integrates a monolithic body diode with 2.0 V forward drop at 0.79 A and 190–390 ns reverse recovery time, enabling synchronous rectification in low-duty-cycle topologies. Thermal resistance of 40 °C/W (junction-to-case) and 60 °C/W (junction-to-ambient, PCB mount) defines its derating behavior under continuous conduction mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports input rails up to 200 V DC with margin for transients in industrial power supplies |
| RDS(on) | 2.0 Ω @ VGS = 10 V - limits conduction loss to ≤1.25 W at 0.79 A continuous drain current |
| Qg | 8.2 nC - enables efficient 100–500 kHz switching with moderate gate driver strength (e.g., TC4427) |
| ID (continuous) | 0.79 A @ TC = 25 °C - defines maximum steady-state current before thermal shutdown on standard 1"² FR-4 board |
| EAS | 50 mJ - withstands single-pulse inductive energy without failure in relay or solenoid drive applications |
| TJ range | −55 to +150 °C - qualified for extended temperature operation in automotive cabin and industrial control enclosures |
Pinout & Package
SOT-223 package with exposed drain tab for heatsinking; 3.3 mm × 6.5 mm footprint; 1.7 mm height; JEDEC TO-261AA compliant; designed for vapor-phase and IR reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal requiring ≤100 nA leakage current; driven by 10 V logic for full enhancement |
| D | Drain | Main high-side current path; electrically connected to exposed tab for thermal conduction and EMI shielding |
| S | Source | Reference node for gate drive; forms return path for load current and body diode conduction |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation in inductive load switching without external snubbers (EAR = 0.31 mJ) |
| Dynamic dV/dt rating | 4.8 V/ns immunity prevents false turn-on during high-slew-rate transients in motor drives |
| Fast switching | Turn-on delay <7.0 ns and fall time <7.0 ns support >1 MHz PWM in compact DC-DC designs |
| Surface-mount SOT-223 | Allows automated placement and achieves >1.25 W power dissipation on standard PCBs without heatsinks |
| Low Qgd/Qg ratio | 4.5/8.2 ≈ 55% - reduces Miller effect, improving noise immunity during hard commutation |
Applications
| LED Constant-Current Driver | Industrial Load Switch |
|---|---|
Use Scenario: Driving 1–3 high-brightness LEDs from 12–48 V DC supply with analog dimming control. IC Role / Device Role / Timing Role: Low-side switch regulating average LED current via PWM duty cycle; body diode handles freewheeling during off-time. Use Value: 2.0 Ω RDS(on) limits I²R loss to <1.25 W at 0.79 A, enabling thermally stable operation on 1"² FR-4 without copper pours. | Use Scenario: Enabling/disabling 24 V DC power to PLC I/O modules or sensor interfaces. IC Role / Device Role / Timing Role: High-voltage, low-current load switch with integrated avalanche capability for inductive back-EMF suppression. Use Value: 50 mJ single-pulse avalanche energy absorbs energy from relay coil de-energization without external clamping diodes. |
| Low-Power DC-DC Converter | Automotive Cabin Control |
Use Scenario: Synchronous buck converter stage stepping 24 V down to 5 V/1 A for microcontroller power rail. IC Role / Device Role / Timing Role: High-side or low-side switching element; body diode used in asynchronous mode if synchronous rectifier not implemented. Use Value: 190–390 ns trr and 0.64–1.3 μC Qrr minimize switching losses during dead-time conduction in 200–500 kHz operation. | Use Scenario: Controlling 12 V solenoids or small fans in vehicle HVAC or seat adjustment systems. IC Role / Device Role / Timing Role: Robust N-channel switch interfaced to MCU GPIO with level-shifting or discrete driver. Use Value: −55 to +150 °C operating range and 250 V VDS ensure reliability across automotive ambient extremes and load dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFL214TR-GE3 | Same die, Pb-free/halogen-free SOT-223 packaging; identical RDS(on), Qg, and avalanche ratings | No functional difference; preferred for RoHS-compliant production with tape-and-reel delivery | Select SiHFL214TR-GE3 when lead-free compliance and JEDEC-standard packaging are required |
| IRFL9110PBF | 200 V VDS, 1.2 Ω RDS(on), 12 nC Qg; lower voltage rating but lower on-resistance and higher gate charge | Better for ≤150 V systems needing lower conduction loss; less suitable for 200+ V transient-prone inputs | Choose IRFL9110PBF only if system max VDS stays below 180 V and gate drive strength supports 12 nC |
Compared with IRFL214PBF, SiHFL214TR-GE3 offers identical electrical performance with enhanced environmental compliance, while IRFL9110PBF trades voltage headroom for lower RDS(on)-making IRFL214PBF optimal for 200–250 V industrial and automotive auxiliary power applications requiring ruggedness over raw efficiency.
Availability
IRFL214PBF is available at Aetrix Electronics and suitable for LED drivers, industrial load switches, and low-power DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for IRFL214PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.
The IRFL214PBF belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for cost-effective, thermally efficient switching in space-constrained industrial and automotive auxiliary power systems.
FAQ
What is the maximum continuous drain current for IRFL214PBF at 100 °C case temperature?
The IRFL214PBF supports 0.50 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the SOT-223 package on standard PCBs; actual usable current depends on layout, copper area, and ambient airflow. The IRFL214PBF must be operated within this limit to avoid junction temperature exceeding 150 °C.
Does IRFL214PBF have a built-in body diode, and what are its key parameters?
Yes, the IRFL214PBF integrates a monolithic body diode with 2.0 V forward voltage at 0.79 A and 190–390 ns reverse recovery time (TJ = 25 °C). Its reverse recovery charge is 0.64–1.3 μC. These values are measured under specified test conditions and define freewheeling behavior in buck or flyback topologies using the IRFL214PBF.
Is IRFL214PBF suitable for avalanche operation, and what energy level is rated?
The IRFL214PBF is repetitively avalanche rated with 0.31 mJ maximum repetitive avalanche energy and 50 mJ single-pulse avalanche energy. These values are validated per Vishay's unclamped inductive switching test (Fig. 12), confirming the IRFL214PBF can safely absorb inductive kickback in relay, solenoid, or motor gate-drive applications without external protection.
What is the gate threshold voltage range for IRFL214PBF, and how does it affect drive requirements?
The IRFL214PBF has a gate threshold voltage range of 2.0 V to 4.0 V at ID = 250 μA. This allows reliable turn-on with 5 V logic (marginally) but is optimized for 10 V gate drive to achieve full RDS(on) = 2.0 Ω. Using 5 V may result in higher on-resistance and thermal stress; thus, the IRFL214PBF should be driven with ≥8 V for robust conduction.
Can IRFL214PBF be paralleled with other devices, and what design considerations apply?
Yes, the IRFL214PBF is designed for ease of paralleling due to positive temperature coefficient of RDS(on), which promotes current sharing. To parallel multiple IRFL214PBF units, use matched gate resistors, symmetrical PCB layout, and individual source resistors for current sensing. Thermal coupling between devices must be minimized to prevent thermal runaway-each IRFL214PBF requires independent heatsinking or spaced mounting.
IRFL214PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 790mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 470mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
IRFL214PBF FAQ
1.How can I place an order for IRFL214PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFL214PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFL214PBF reliable?
The price and inventory of IRFL214PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL214PBF is usually 5 days.
3.What payment methods are accepted for IRFL214PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL214PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFL214PBF?
IRFL214PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFL214PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFL214PBF?
For technical support, including IRFL214PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL214PBF requirements.
6.How does Aetrix verify that IRFL214PBF is sourced from the original manufacturer or authorized distributors?
All IRFL214PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL214PBF meets industry standards.
7.What is the process for return or replacement of IRFL214PBF?
All IRFL214PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFL214PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFL214PBF part is unused and in its original packaging.
Return procedure for IRFL214PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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