Vishay Siliconix IRFL214TR

Overview

IRFL214TR from Vishay Siliconix is a 250 V, 0.79 A N-channel surface-mount power MOSFET in SOT-223 package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating. It serves as a low-power switching device in DC-DC converters, LED drivers, and load-switching circuits where thermal performance on PCB mount is critical.

For engineers reviewing the IRFL214TR datasheet, IRFL214TR pinout, IRFL214TR application, or IRFL214TR equivalent, key selection criteria include its 250 V drain-source breakdown voltage, 2.0 Ω on-resistance at 10 V gate drive, 60 °C/W junction-to-ambient thermal resistance (PCB mount), repetitive avalanche capability (0.31 mJ), and SOT-223 package compatibility with automated assembly.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for high-voltage, low-current switching. Its gate threshold voltage range (2.0–4.0 V) supports standard logic-level drive, while dynamic parameters-including 140 pF input capacitance, 42 pF output capacitance, and 9.6 pF reverse transfer capacitance-enable predictable turn-on/turn-off timing in hard-switched topologies.

The device integrates a robust body diode with 190–390 ns reverse recovery time and 0.64–1.3 μC reverse recovery charge, validated under 100 A/μs dI/dt conditions. Its 4.8 V/ns peak diode recovery dv/dt rating ensures stability in inductive switching environments without external snubbing in moderate-speed applications.

Key Specifications

Pinout & Package

SOT-223 package with exposed drain tab for enhanced thermal conduction; 3-pin configuration (G, D, S) with pin 1 = Gate, pin 2 = Drain (tab), pin 3 = Source; JEDEC TO-261AA compliant outline; 6.3–6.7 mm length, 3.3–3.7 mm width, 1.55–1.80 mm height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFL214TR, SiHFL214TR-GE3 offers identical electrical and thermal behavior with packaging differentiation, while IRFL9110TRPBF trades voltage capability and ruggedness for higher current density in low-voltage, non-avalanche-critical designs.

Availability

IRFL214TR is available at Aetrix Electronics and suitable for LED drivers, industrial load switching, and low-power DC-DC converters requiring stable component supply across extended production lifecycles.

Supply support for IRFL214TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and thermal performance.

The IRFL214TR belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for cost-effective, thermally efficient switching in space-constrained industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current for IRFL214TR at 100 °C case temperature?

The IRFL214TR supports 0.50 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-223 package mounted on a standard PCB. At 25 °C case temperature, the rating increases to 0.79 A. Engineers must verify actual board layout and copper area to confirm thermal performance in their application before committing to 0.50 A operation at elevated temperatures.

Does IRFL214TR have a built-in body diode, and what are its key parameters?

Yes, IRFL214TR integrates a monolithic body diode with forward voltage V_SD ≤ 2.0 V at I_S = 0.79 A and T_J = 25 °C. Its reverse recovery time is 190–390 ns, and reverse recovery charge is 0.64–1.3 μC under 100 A/μs dI/dt. These values are measured with V_GS = 0 V and are critical for evaluating commutation losses in synchronous rectification or freewheeling paths.

Is IRFL214TR suitable for logic-level gate drive?

IRFL214TR is not a logic-level MOSFET; its gate threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. While it may conduct weakly at 3.3 V or 5 V, full enhancement requires ≥10 V to achieve the specified 2.0 Ω on-resistance. For true logic-level operation, consider Vishay's Si2300 or similar 2.5 V-threshold devices instead of IRFL214TR.

What is the thermal resistance from junction to ambient for IRFL214TR in PCB-mount configuration?

The maximum junction-to-ambient thermal resistance (R_thJA) for IRFL214TR is 60 °C/W when mounted on a 1" square FR-4 PCB, per the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions and defines the worst-case thermal path for estimating junction temperature rise: T_J = T_A + (P_D × 60). Actual performance improves with added copper pour or thermal vias.

Can IRFL214TR replace IRFL9110TRPBF in an existing design?

No, IRFL214TR cannot directly replace IRFL9110TRPBF due to fundamental parameter differences: IRFL214TR has higher V_DS (250 V vs. 100 V) but lower I_D (0.79 A vs. 1.2 A) and higher R_DS(on) (2.0 Ω vs. 1.2 Ω). Substituting IRFL214TR into a 100 V circuit risks over-specification and reduced efficiency; substituting IRFL9110TRPBF into a 200 V system risks catastrophic failure. Always validate voltage margin, current demand, and thermal limits before cross-replacement involving IRFL214TR.