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Vishay Siliconix IRFL214TRPBF

Part No.:
IRFL214TRPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRFL214TRPBF.pdf
Description:
MOSFET N-CH 250V 790MA SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,714

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Product details

Overview

IRFL214TRPBF from Vishay Siliconix is a 250 V, 0.79 A N-channel surface-mount power MOSFET in SOT-223 package, with RDS(on) = 2.0 Ω at VGS = 10 V, Qg = 8.2 nC, and repetitive avalanche rating. It serves as a low-power switching element in DC-DC converters, LED drivers, and load-switching circuits where compact size and thermal robustness are critical.

For engineers reviewing the IRFL214TRPBF datasheet, IRFL214TRPBF pinout, IRFL214TRPBF application, or IRFL214TRPBF equivalent, key selection criteria include its 250 V drain-source breakdown voltage, 2.0 Ω on-resistance at 10 V gate drive, 8.2 nC total gate charge, SOT-223 thermal performance (2.0 W PCB mount), and avalanche energy rating of 50 mJ (single-pulse).

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family, optimized for fast switching and ruggedized operation. Its design integrates dynamic dV/dt immunity (4.8 V/ns), repetitive avalanche capability (0.31 mJ), and low gate charge (Qgd = 4.5 nC) to support reliable hard-switching in inductive loads.

The SOT-223 package features an enlarged drain tab for enhanced heatsinking-enabling >1.25 W dissipation on FR-4 PCBs-and supports automated pick-and-place assembly. Internal source/drain inductances (LS = 6.0 nH, LD = 4.0 nH) are specified to aid layout-aware switching analysis.

Key Specifications

ParameterValue and Actual Design Meaning
VDS250 V - Supports primary-side switching in offline flyback or auxiliary supplies up to 200 V DC bus.
RDS(on)2.0 Ω @ VGS = 10 V - Delivers ≤0.47 A continuous current with <1.0 W conduction loss at room temperature.
Qg8.2 nC - Enables efficient 100–500 kHz switching with standard gate drivers (e.g., TC442x) without excessive drive power.
EAS50 mJ - Withstands unclamped inductive energy transients in relay/snubberless solenoid drivers.
TJ Range−55 °C to +150 °C - Qualified for industrial ambient environments and thermally constrained enclosures.
RthJA60 °C/W (PCB mount) - Limits junction rise to ~120 °C at 2.0 W dissipation on 1"² FR-4 board.

Pinout & Package

SOT-223 package with exposed drain tab (pin 2) for thermal conduction and mechanical anchoring. Standard 4-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Source (dual-source connection).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)Gate terminalHigh-impedance control input requiring ≤100 nA leakage; driven by logic-level or dedicated gate driver.
Pin 2 (D)Drain terminal / thermal padPrimary high-voltage node and main thermal path; must be soldered to copper pour for rated power handling.
Pins 3 & 4 (S)Source terminalsLow-side return path; dual-source pins reduce source inductance and improve switching stability.

Key Features

FeatureDesign Value
Repetitive avalanche ratedEnables reliable operation under transient overloads (e.g., motor stall, inductive kickback) without derating or external clamping.
Dynamic dV/dt rating4.8 V/ns immunity prevents false turn-on during high-speed voltage transitions in noisy power stages.
Fast switching7.0 ns turn-on delay + 7.6 ns rise time enables clean edge control in PWM dimming and SMPS applications.
Easy parallelingPositive temperature coefficient of RDS(on) ensures current sharing across multiple IRFL214TRPBF devices without ballast resistors.

Applications

LED Constant-Current DriverIndustrial Load Switch

Use Scenario: Low-cost, space-constrained LED string driver in signage or indicator panels operating from 12–48 V DC input.

IC Role / Device Role / Timing Role: N-channel low-side switch controlling average LED current via PWM duty cycle.

Use Value: 2.0 Ω RDS(on) limits conduction loss to <0.5 W at 0.5 A, while 250 V rating accommodates surge transients on shared power rails.

Use Scenario: Remote-controlled 24 V DC load enable/disable in PLC I/O modules or HVAC actuators.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays, providing silent, bounce-free switching.

Use Value: Repetitive avalanche rating (0.31 mJ) absorbs inductive energy from solenoid coils without snubbers or flyback diodes.

Offline Auxiliary SupplyLow-Power DC-DC Converter

Use Scenario: Bias supply for gate drivers or controllers in isolated AC-DC adapters (<30 W).

IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: 250 V VDS safely withstands reflected output voltage plus leakage spike; Qg = 8.2 nC minimizes driver losses at 65–100 kHz.

Use Scenario: Step-down regulator for microcontroller core voltage in battery-powered sensors or IoT nodes.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in buck converter with external controller.

Use Value: Low Qgd/Qg ratio (4.5/8.2) improves duty-cycle control fidelity and reduces shoot-through risk during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SiHFL214TR-GE3Same die, Pb-free/halogen-free SOT-223 package; identical RDS(on), Qg, and avalanche specs.No functional difference; qualified for RoHS-compliant manufacturing with alternate tape/reel packaging.Select when full halogen-free compliance and Vishay's "-GE3" traceability are required.
IRFL9110TRPBFLower VDS (100 V), higher RDS(on) (3.5 Ω), same SOT-223 footprint and gate drive profile.Not suitable for >120 V applications; better for 12–24 V systems where lower cost and reduced voltage stress are priorities.Choose only for low-voltage, high-current scenarios where 250 V margin is unnecessary.

Compared with SiHFL214TR-GE3, IRFL214TRPBF offers identical electrical performance but differs in lead finish and manufacturing location ("-BE3"); versus IRFL9110TRPBF, it provides 2.5× higher voltage rating at the expense of slightly higher on-resistance-making it optimal for universal-input auxiliary supplies and industrial 24–48 V systems.

Availability

IRFL214TRPBF is available at Aetrix Electronics and suitable for LED drivers, industrial load switches, offline auxiliary supplies, and low-power DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for IRFL214TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, reliability, and thermal performance.

The IRFL214TRPBF belongs to Vishay's high-voltage SOT-223 MOSFET product line, engineered for compact, surface-mount power switching in cost-sensitive industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current for IRFL214TRPBF at 100 °C case temperature?

The maximum continuous drain current for IRFL214TRPBF is 0.50 A at TC = 100 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-223 package under sustained power dissipation; operation above this current requires active cooling or reduced duty cycle to maintain TJ ≤ 150 °C. The IRFL214TRPBF datasheet specifies linear derating of 0.025 W/°C above 25 °C case temperature.

Does IRFL214TRPBF have a built-in body diode, and what are its key parameters?

Yes, IRFL214TRPBF includes an integral body diode with VSD = 2.0 V at IS = 0.79 A and TJ = 25 °C, reverse recovery time trr = 190–390 ns, and Qrr = 0.64–1.3 μC. These values are measured under standardized conditions (IF = 2.7 A, dI/dt = 100 A/μs) and support synchronous rectification or freewheeling in low-frequency switching topologies. The IRFL214TRPBF body diode is not optimized for high-frequency ZVS operation.

Can IRFL214TRPBF be used with 5 V logic-level gate drive?

No-IRFL214TRPBF is not a logic-level MOSFET. Its gate threshold voltage VGS(th) ranges from 2.0 V to 4.0 V, and RDS(on) is specified at VGS = 10 V (2.0 Ω). At 5 V gate drive, RDS(on) increases significantly (>5 Ω), causing excessive conduction loss. For 5 V control, consider Vishay's Si2300 or similar logic-level alternatives-not the IRFL214TRPBF.

What is the thermal resistance from junction to ambient for IRFL214TRPBF on a standard PCB?

The maximum junction-to-ambient thermal resistance (RthJA) for IRFL214TRPBF is 60 °C/W when mounted on a 1" square FR-4 PCB, per the Thermal Resistance Ratings table. This value assumes no additional heatsink; actual performance depends on copper area, layer count, and airflow. The IRFL214TRPBF achieves 2.0 W power dissipation under these conditions, making it suitable for thermally constrained layouts where larger packages are impractical.

Is IRFL214TRPBF suitable for avalanche energy handling in unclamped inductive switching?

Yes-IRFL214TRPBF is explicitly rated for repetitive avalanche operation with EAR = 0.31 mJ and single-pulse EAS = 50 mJ. These ratings are validated per JEDEC test conditions (L = 128 mH, IAS = 0.79 A, VDD = 50 V). Designers must ensure pulse width and duty cycle remain within limits shown in Figure 11 to avoid exceeding TJ(max) = 150 °C. The IRFL214TRPBF datasheet confirms this capability in both absolute maximum and avalanche test notes.

IRFL214TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
790mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 470mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta), 3.1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRFL214TRPBF FAQ

1.How can I place an order for IRFL214TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL214TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL214TRPBF reliable?

The price and inventory of IRFL214TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL214TRPBF is usually 5 days.

3.What payment methods are accepted for IRFL214TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL214TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL214TRPBF?

IRFL214TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL214TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL214TRPBF?

For technical support, including IRFL214TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL214TRPBF requirements.

6.How does Aetrix verify that IRFL214TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFL214TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL214TRPBF meets industry standards.

7.What is the process for return or replacement of IRFL214TRPBF?

All IRFL214TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFL214TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL214TRPBF part is unused and in its original packaging.

Return procedure for IRFL214TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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