My Inquiry
My Account
Vishay Siliconix IRFL214TRPBF-BE3
- Part No.:
- IRFL214TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
IRFL214TRPBF-BE3.pdf
- Description:
- MOSFET N-CH 250V 790MA SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:1,587
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFL214TRPBF-BE3 from Vishay Siliconix is a 250 V, 0.79 A N-channel enhancement-mode power MOSFET in SOT-223 package, featuring 2.0 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating-designed for low-power DC-DC converters, LED drivers, and load-switching applications where surface-mount ruggedness and fast switching are required.
For engineers reviewing the IRFL214TRPBF-BE3 datasheet, IRFL214TRPBF-BE3 pinout, IRFL214TRPBF-BE3 application, or IRFL214TRPBF-BE3 equivalent, key selection criteria include its 250 V blocking capability, 0.79 A continuous drain current at TC = 25 °C, SOT-223 thermal performance (RthJA = 60 °C/W on PCB), and verified dV/dt immunity (4.8 V/ns) in unclamped inductive switching.
Technical Context
This device belongs to Vishay's third-generation high-voltage power MOSFET family, optimized for surface-mount reliability and dynamic robustness. It supports repetitive avalanche operation up to 0.31 mJ and delivers fast switching with 7.0 ns turn-on delay, 7.6 ns rise time, and 16 ns turn-off delay under standardized 125 V/2.7 A test conditions.
The SOT-223 package integrates an enlarged drain tab for enhanced heatsinking-enabling >1.25 W dissipation on FR-4 PCBs-and features internal source/drain inductances of 6.0 nH and 4.0 nH respectively, critical for minimizing switching oscillation in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Supports input rails up to 200 V DC with margin for transients in industrial and automotive auxiliary supplies. |
| RDS(on) | 2.0 Ω @ VGS = 10 V - Enables <1.6 W conduction loss at 0.79 A, suitable for low-duty-cycle switching in space-constrained designs. |
| Qg | 8.2 nC - Low gate charge allows efficient drive from microcontroller GPIO or low-current gate drivers without external buffering. |
| EAS | 50 mJ (single-pulse) - Withstands unclamped inductive energy events in relay driving or solenoid control without failure. |
| dV/dt Rating | 4.8 V/ns - Confirmed immunity to false turn-on during high-slew-rate noise coupling in motor gate-drive or SMPS high-side configurations. |
| TJ Range | –55 °C to +150 °C - Qualified for extended temperature operation in sealed enclosures or under-hood automotive modules. |
Pinout & Package
SOT-223 package with exposed drain tab (pin 2) for thermal conduction; standard JEDEC TO-261AA outline; 3-pin configuration with G–D–S assignment (pin 1 = Gate, pin 2 = Drain, pin 3 = Source).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring ≤ ±20 V bias; 100 nA leakage ensures stable off-state in battery-powered hold circuits. |
| Pin 2 (D) | Drain | High-voltage power node connected to internal die backside; soldered tab provides primary thermal path to PCB copper. |
| Pin 3 (S) | Source | Reference node for gate drive; internal 6.0 nH inductance affects diode reverse recovery behavior in synchronous rectification. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 0.31 mJ per pulse enables reliable operation in inductive load switching without external snubbers. |
| Dynamic dV/dt rating | 4.8 V/ns validated per JEDEC JESD22-A114 ensures noise immunity in high-frequency gate-drive environments. |
| Fast switching | 7.0 ns td(on), 7.6 ns tr, 16 ns td(off) reduce transition losses in 100–500 kHz DC-DC topologies. |
| Surface-mount optimized | SOT-223 footprint allows automated placement and achieves >2.0 W power dissipation on 1" FR-4 PCB. |
Applications
| LED Constant-Current Driver | Low-Power DC-DC Converter Switch |
|---|---|
Use Scenario: Driving 1–3串联 white LEDs from 12–24 V supply using PWM dimming and constant-current regulation. IC Role / Device Role / Timing Role: Low-side switch controlling LED current path; operates in linear or PWM mode with <100 ns timing resolution. Use Value: 2.0 Ω RDS(on) limits dropout voltage to <1.6 V at 0.8 A, preserving headroom for feedback loop stability and thermal margin. |
Use Scenario: High-side or low-side switch in 5–24 V input, 3.3–12 V output buck converter for embedded microcontrollers. IC Role / Device Role / Timing Role: Power stage transistor switching at 200–500 kHz; gate driven by dedicated controller IC or MCU PWM. Use Value: 8.2 nC Qg enables full turn-on with <10 mA peak gate current, reducing driver complexity and board area. |
| Automotive Auxiliary Load Switch | Industrial Sensor Power Control |
Use Scenario: Controlling 12 V solenoids, fans, or relays in vehicle body electronics with load-dump and jump-start resilience. IC Role / Device Role / Timing Role: Protected load switch with integrated avalanche energy handling; used with external current sense and fault logic. Use Value: 50 mJ single-pulse EAS absorbs inductive kickback from 12 V/0.5 A solenoids without external clamping diodes. |
Use Scenario: Remote on/off control of 24 V industrial sensors (e.g., pressure transmitters, RTD interfaces) via PLC I/O modules. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays; switched at <1 Hz with precise timing for calibration sequencing. Use Value: –55 °C to +150 °C operating range ensures functionality across factory floor ambient extremes and enclosure self-heating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFL214TR-GE3 | Same die, Pb-free/halogen-free SOT-223 variant; identical RDS(on), Qg, and avalanche ratings. | No functional difference; selected when RoHS/REACH compliance requires full halogen-free construction. | Drop-in replacement if board-level halogen content must meet IPC-1752 Class A reporting. |
| IRFL9110TRPBF | 200 V VDS, 1.2 Ω RDS(on), 6.5 nC Qg; lower voltage rating but faster switching and lower conduction loss at 0.5 A. | Better suited for 12–15 V systems where 250 V margin is unnecessary; not rated for 200 V bus applications. | Prefer when optimizing for efficiency below 15 V input and gate drive current is constrained. |
Compared with IRFL214TRPBF-BE3, SiHFL214TR-GE3 offers identical electrical performance with stricter environmental compliance, while IRFL9110TRPBF trades voltage headroom for lower RDS(on) and gate charge-making it more efficient in sub-15 V designs but unsuitable for 24–48 V industrial rails.
Availability
IRFL214TRPBF-BE3 is available at Aetrix Electronics and suitable for LED drivers, low-power DC-DC converters, and automotive auxiliary load switching requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRFL214TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.
The IRFL214TRPBF-BE3 belongs to Vishay's high-voltage SOT-223 power MOSFET product line, engineered for surface-mount applications demanding avalanche robustness, low gate charge, and stable parametric performance across temperature.
FAQ
What is the maximum continuous drain current for IRFL214TRPBF-BE3 at 100 °C case temperature?
The IRFL214TRPBF-BE3 supports 0.50 A continuous drain current at TC = 100 °C, derated linearly from 0.79 A at 25 °C using a factor of 0.025 W/°C. This reflects thermal limitations of the SOT-223 package under sustained power dissipation, not device degradation.
Does IRFL214TRPBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, IRFL214TRPBF-BE3 integrates a body diode with 0.79 A continuous forward current rating, 2.0 V forward voltage at 0.79 A and 25 °C, and 190–390 ns reverse recovery time. Its Qrr is 0.64–1.3 μC, critical for evaluating commutation losses in synchronous rectifier or flyback designs.
Is IRFL214TRPBF-BE3 suitable for avalanche operation, and what energy level is specified?
Yes, IRFL214TRPBF-BE3 is explicitly rated for repetitive avalanche operation with 0.31 mJ per pulse and single-pulse capability up to 50 mJ. These values are measured under defined conditions (VDD = 50 V, L = 128 mH, IAS = 0.79 A) and require proper PCB layout to avoid thermal runaway.
What is the gate threshold voltage range for IRFL214TRPBF-BE3, and how does it affect drive requirements?
The gate-source threshold voltage VGS(th) for IRFL214TRPBF-BE3 is 2.0–4.0 V at ID = 250 μA. This range confirms compatibility with standard 5 V or 3.3 V logic-level gate drivers, though full enhancement to RDS(on) = 2.0 Ω requires VGS ≥ 10 V per datasheet test conditions.
How does the SOT-223 package of IRFL214TRPBF-BE3 improve thermal performance over standard SOT-23?
The SOT-223 package of IRFL214TRPBF-BE3 uses an enlarged drain tab that serves as the primary thermal path, enabling >2.0 W power dissipation on a 1" FR-4 PCB-more than double typical SOT-23 capability. Its RthJA is 60 °C/W (PCB mount), versus >200 °C/W for SOT-23, directly supporting higher current density in space-limited designs.
IRFL214TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 790mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 470mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
IRFL214TRPBF-BE3 FAQ
1.How can I place an order for IRFL214TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFL214TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFL214TRPBF-BE3 reliable?
The price and inventory of IRFL214TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL214TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFL214TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL214TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFL214TRPBF-BE3?
IRFL214TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFL214TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFL214TRPBF-BE3?
For technical support, including IRFL214TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL214TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFL214TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFL214TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL214TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFL214TRPBF-BE3?
All IRFL214TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL214TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFL214TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFL214TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFL214TRPBF-BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
