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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFL9014

Name: IRFL9014
Brand: Vishay Siliconix
SKU: IRFL9014
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL9014

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL9014.pdf

Description:: MOSFET P-CH 60V 1.8A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFL9014 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in SOT-223 package, rated for -60 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -1.8 A continuous drain current at T_C = 25 °C. It delivers fast switching, repetitive avalanche capability, and robust dV/dt immunity for high-reliability DC-DC converter high-side switches and load-switching applications.

For engineers reviewing the IRFL9014 datasheet, IRFL9014 pinout, IRFL9014 application, or IRFL9014 equivalent, this device is selected for low-voltage P-channel switching where thermal performance on PCB-mount configurations, gate charge (12 nC), body diode recovery (80–160 ns), and rugged unclamped inductive switching (140 mJ single-pulse E_AS) are critical design constraints.

Technical Context

This MOSFET employs a third-generation trench-gate silicon process optimized for low R_DS(on) and controlled dynamic parameters. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its SOT-223 package integrates an enlarged drain tab for direct PCB heatsinking-supporting >1.25 W dissipation with standard FR-4 mounting.

The device features a specified gate threshold voltage range of -2.0 V to -4.0 V, enabling compatibility with both logic-level (-5 V) and standard (-10 V) drive, and includes intrinsic body diode characteristics with V_SD = -5.5 V at I_S = -1.8 A and Q_rr = 0.096–0.19 μC for synchronous rectifier or flyback snubber roles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for 24 V/48 V bus protection and reverse-polarity circuits
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1 W conduction loss at 1.4 A, suitable for compact load switches
Q_g	12 nC - Determines gate driver strength requirement; supports ~1 MHz switching with ≤24 Ω R_g
I_D (cont.)	-1.8 A @ T_C = 25 °C - Continuous current rating under heatsink-limited conditions
E_AS	140 mJ - Single-pulse avalanche energy tolerance for inductive load turn-off without external clamping
trr / Q_rr	80–160 ns / 0.096–0.19 μC - Body diode recovery behavior critical for synchronous buck high-side operation
R_thJA (PCB)	60 °C/W - Thermal resistance defining temperature rise on 1"² FR-4 board, limiting max ambient to ~75 °C at full power

Pinout & Package

SOT-223 package with exposed drain tab (pin 3) for thermal conduction; surface-mount compatible with vapor-phase, infrared, or wave soldering. Dimensions per JEDEC TO-261AA outline: 6.5 × 3.5 × 1.7 mm (L × W × H), with 2.3 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires -10 V for full enhancement; threshold -2.0 to -4.0 V defines logic-level compatibility
2 (S)	Source	Reference node for gate drive; connected to input rail in high-side switch configuration
3 (D)	Drain	Power output terminal; electrically and thermally tied to exposed copper tab for PCB heatsinking

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports repeated inductive turn-off stress up to I_AR = -1.8 A and E_AR = 0.31 mJ without degradation
Dynamic dV/dt immunity	-4.5 V/ns rated peak diode recovery dv/dt prevents false turn-on during fast transients
Thermally enhanced SOT-223	Enables >1.25 W power dissipation on standard PCB-2× typical SOT-23 capability
Fast switching	td(on)/tr/td(off)/tf = 11/63/9.6/31 ns at V_DD = -30 V, enabling efficient 500 kHz–1 MHz DC-DC operation
Pb-free and halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc. 99912

Applications

Industrial Power Sequencing	Automotive Reverse-Polarity Protection
Use Scenario: Controlled power-up sequencing of multiple 24 V subsystems in PLC backplanes and motor drives. IC Role / Device Role / Timing Role: High-side load switch enabling independent enable/disable control per rail with minimal quiescent current. Use Value: R_DS(on) = 0.50 Ω limits voltage drop to <0.9 V at 1.8 A, preserving margin for downstream LDOs; SOT-223 thermal performance sustains reliability across -40 to +85 °C ambient.	Use Scenario: Input protection against battery misconnection in 12 V automotive ECUs and infotainment modules. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with supply input. Use Value: V_DS = -60 V provides 4× safety margin over 12 V nominal; -5.5 V body diode forward drop ensures low-loss reverse-current blocking without Schottky losses.
DC-DC Converter High-Side Switch	USB-C Load Switch
Use Scenario: High-side switch in non-synchronous buck converters for point-of-load regulation in telecom base stations. IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with unclamped inductive turn-off. Use Value: E_AS = 140 mJ allows safe energy absorption during turn-off without external TVS; Q_g = 12 nC enables efficient gate driving with low-cost discrete drivers.	Use Scenario: Inrush current limiting and hot-plug protection for USB-C PD ports in portable test equipment. IC Role / Device Role / Timing Role: Low-voltage P-channel load switch controlled by system PMIC enable signal. Use Value: V_GS(th) = -2.0 to -4.0 V ensures reliable turn-on with 3.3 V logic; SOT-223 footprint supports automated assembly while meeting IPC Class 2 thermal requirements.

Industrial Power Sequencing

Automotive Reverse-Polarity Protection

Use Scenario: Controlled power-up sequencing of multiple 24 V subsystems in PLC backplanes and motor drives.

IC Role / Device Role / Timing Role: High-side load switch enabling independent enable/disable control per rail with minimal quiescent current.

Use Value: R_DS(on) = 0.50 Ω limits voltage drop to <0.9 V at 1.8 A, preserving margin for downstream LDOs; SOT-223 thermal performance sustains reliability across -40 to +85 °C ambient.

Use Scenario: Input protection against battery misconnection in 12 V automotive ECUs and infotainment modules.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with supply input.

Use Value: V_DS = -60 V provides 4× safety margin over 12 V nominal; -5.5 V body diode forward drop ensures low-loss reverse-current blocking without Schottky losses.

DC-DC Converter High-Side Switch

USB-C Load Switch

Use Scenario: High-side switch in non-synchronous buck converters for point-of-load regulation in telecom base stations.

IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with unclamped inductive turn-off.

Use Value: E_AS = 140 mJ allows safe energy absorption during turn-off without external TVS; Q_g = 12 nC enables efficient gate driving with low-cost discrete drivers.

Use Scenario: Inrush current limiting and hot-plug protection for USB-C PD ports in portable test equipment.

IC Role / Device Role / Timing Role: Low-voltage P-channel load switch controlled by system PMIC enable signal.

Use Value: V_GS(th) = -2.0 to -4.0 V ensures reliable turn-on with 3.3 V logic; SOT-223 footprint supports automated assembly while meeting IPC Class 2 thermal requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFL9014TR-GE3	Same die, identical R_DS(on), Q_g, and avalanche ratings; Pb-free/halogen-free per JEDEC J-STD-609A	No functional difference; alternate ordering code for same qualified production lot	Select when RoHS-compliant tape-and-reel packaging is required without BE3 manufacturing location designation
IRFL9110	Higher V_DS (-100 V), higher R_DS(on) (1.2 Ω), lower I_D (-1.1 A), same SOT-223 package and P-channel topology	Better suited for 48 V industrial inputs but less efficient at 24 V due to higher conduction loss	Choose only if -100 V blocking is mandatory; not drop-in due to 2.4× higher R_DS(on) and reduced current capability

Compared with IRFL9014, SiHFL9014TR-GE3 offers identical electrical and thermal performance with updated environmental compliance, while IRFL9110 trades conduction efficiency for higher voltage rating-making it unsuitable as a direct replacement unless system voltage exceeds 60 V.

Availability

IRFL9014 is available at Aetrix Electronics and suitable for industrial power sequencing, automotive reverse-polarity protection, and DC-DC converter high-side switching requiring stable component supply and long-term manufacturability.

Supply support for IRFL9014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and automotive-grade reliability.

The IRFL9014 belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for high-efficiency, space-constrained DC-DC conversion and load-switching in industrial and automotive environments.

FAQ

What is the maximum continuous drain current for IRFL9014 at 100 °C case temperature?

The IRFL9014 supports -1.1 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-223 package under sustained high-temperature operation. Designers must verify PCB copper area and airflow to maintain T_C ≤ 100 °C when operating near this limit. The IRFL9014 datasheet confirms this value applies to standard FR-4 mounting per Note e.

Does IRFL9014 have a specified body diode reverse recovery time?

Yes, the IRFL9014 specifies body diode reverse recovery time (t_rr) as 80–160 ns at T_J = 25 °C, I_F = -6.7 A, and dI/dt = 100 A/μs. This parameter is critical for high-frequency synchronous rectification and flyback snubber design. The IRFL9014's t_rr is measured with the device in its standard SOT-223 configuration and correlates directly with Q_rr = 0.096–0.19 μC.

Can IRFL9014 be used in logic-level gate drive applications?

Yes, the IRFL9014 has a gate threshold voltage range of -2.0 V to -4.0 V, making it compatible with logic-level drive at V_GS = -5 V. However, full enhancement (R_DS(on) = 0.50 Ω) requires V_GS = -10 V. For logic-level use, designers should verify actual R_DS(on) at -5 V (typically ~1.2 Ω) and confirm acceptable conduction loss. The IRFL9014 datasheet explicitly notes V_GS = -5 V for logic-level devices in Fig. 14.

What is the thermal resistance from junction to ambient for IRFL9014 on a PCB?

The IRFL9014 has a maximum junction-to-ambient thermal resistance (R_thJA) of 60 °C/W when mounted on a 1" square FR-4 PCB, as defined in the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions and guides heatsinking requirements. The IRFL9014's SOT-223 package achieves this via its exposed drain tab, which serves as the primary thermal path to the PCB copper plane.

Is IRFL9014 suitable for avalanche energy handling in unclamped inductive switching?

Yes, the IRFL9014 is repetitively avalanche rated with E_AS = 140 mJ (single-pulse) and E_AR = 0.31 mJ (repetitive), validated per test conditions in Figure 12. This makes the IRFL9014 appropriate for relay driving, solenoid control, and other inductive loads where external clamping is impractical. The IRFL9014's avalanche capability is process-qualified and documented in Vishay's S21-0322-Rev. G datasheet.

IRFL9014 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL9014 FAQ

1.How can I place an order for IRFL9014 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL9014 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL9014 reliable?

The price and inventory of IRFL9014 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL9014 is usually 5 days.

3.What payment methods are accepted for IRFL9014?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL9014 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL9014?

IRFL9014 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL9014 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL9014?

For technical support, including IRFL9014 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL9014 requirements.

6.How does Aetrix verify that IRFL9014 is sourced from the original manufacturer or authorized distributors?

All IRFL9014 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL9014 meets industry standards.

7.What is the process for return or replacement of IRFL9014?

All IRFL9014 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL9014, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL9014 part is unused and in its original packaging.

Return procedure for IRFL9014:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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