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Vishay Siliconix IRFL9110

Part No.:
IRFL9110
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRFL9110.pdf
Description:
MOSFET P-CH 100V 1.1A SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,857

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Product details

Overview

IRFL9110 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in SOT-223 package, rated for -100 V drain-source voltage, 1.2 Ω RDS(on) at VGS = -10 V, and -1.1 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for low-voltage DC-DC conversion and load switching in space-constrained PCBs.

For engineers reviewing the IRFL9110 datasheet, IRFL9110 pinout, IRFL9110 application, or IRFL9110 equivalent, key selection criteria include its -100 V blocking capability, thermal performance on FR-4 PCB (2.0 W), body diode recovery time (80–160 ns), and gate charge profile (Qg = 8.7 nC) for driver sizing and efficiency analysis.

Technical Context

This device operates as a high-side switch in buck regulators, reverse-polarity protection circuits, and hot-swap controllers. Its P-channel topology eliminates external level-shifting circuitry, while its 40 °C/W junction-to-case thermal resistance enables direct heatsinking via the exposed drain tab.

The IRFL9110 features a ruggedized third-generation silicon process with dynamic dv/dt rating (-5.5 V/ns), unclamped inductive switching capability (EAS = 100 mJ), and specified body diode parameters (VSD = -5.5 V, Qrr = 0.15–0.30 μC) critical for synchronous rectification and flyback snubber design.

Key Specifications

Parameter Value and Actual Design Meaning
VDS -100 V - Supports input rails up to -100 V in high-side switching without breakdown.
RDS(on) 1.2 Ω @ VGS = -10 V - Enables <1.3 W conduction loss at -1.1 A, suitable for low-power DC-DC stages.
Qg 8.7 nC - Determines gate drive energy requirement; compatible with standard logic-level drivers (e.g., TC4420).
ID (cont.) -1.1 A @ TC = 25 °C - Specifies maximum steady-state current with heatsink; derates to -0.69 A at 100 °C case temperature.
EAS 100 mJ - Quantifies single-pulse avalanche robustness during inductive turn-off transients.
trr / Qrr 80–160 ns / 0.15–0.30 μC - Defines body diode recovery behavior in freewheeling paths; impacts switching loss and EMI.
RthJA 60 °C/W (PCB mount) - Sets thermal rise under 2.0 W dissipation on 1"² FR-4; guides layout copper area requirements.

Pinout & Package

SOT-223 package with exposed drain tab for thermal conduction and mechanical anchoring. Standard JEDEC TO-261AA outline; 3-pin configuration with G-S-D pin order (viewed from top, marking side up).

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; requires -10 V for full enhancement; ±20 V absolute max rating.
2 (S) Source Reference node for gate drive; connects to system ground or positive rail in high-side configurations.
3 (D) Drain High-side output node; electrically and thermally connected to exposed metal tab (pin 4).
4 (Tab) Drain (thermal) Integral heatsink surface; must be soldered to PCB copper pour for thermal management.

Key Features

Feature Design Value
Repetitive avalanche rated EAR = 0.31 mJ - Enables reliable operation under repeated inductive switching stress without derating.
Dynamic dv/dt immunity -5.5 V/ns - Suppresses false turn-on during high-speed voltage transients in noisy industrial environments.
Fast switching td(on)/tr/td(off)/tf = 10/27/15/17 ns - Reduces transition losses in PWM frequencies up to 500 kHz.
Surface-mount optimized SOT-223 footprint - Compatible with automated pick-and-place; no through-hole assembly required.
Lead (Pb)-free & halogen-free IRFL9110TRPbF-BE3 - Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profiles.

Applications

Reverse Polarity Protection Hot-Swap Controller

Use Scenario: Prevents damage when a battery or supply is connected with incorrect polarity in portable medical devices.

IC Role / Device Role / Timing Role: High-side P-channel switch placed between input connector and system rail; activated only when polarity is correct.

Use Value: Eliminates need for series Schottky diode (reducing forward drop from ~0.4 V to <0.1 V at 1 A), improving efficiency and thermal margin.

Use Scenario: Controls inrush current during insertion of pluggable modules into backplane systems.

IC Role / Device Role / Timing Role: Inrush limiter in series with supply path; gate driven by dedicated hot-swap controller (e.g., LTC4215).

Use Value: Limits peak inrush to <2 A using controlled turn-on slope, preventing bus droop and contact arcing.

Buck Converter High-Side Switch Load Switch for Industrial I/O

Use Scenario: High-side switch in non-synchronous buck regulator for 24 V industrial sensors.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz; body diode conducts freewheeling current.

Use Value: Leverages -100 V rating for 48 V input tolerance and 1.2 Ω RDS(on) to maintain >88% efficiency at 500 mA load.

Use Scenario: Controlled power delivery to isolated CAN transceivers or analog front-ends in factory automation PLCs.

IC Role / Device Role / Timing Role: ON/OFF enable switch with soft-start; driven directly from microcontroller GPIO.

Use Value: Provides clean power sequencing (no undershoot) and fault isolation via integrated avalanche capability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
SiHFL9110TR-GE3 Same die, alternate manufacturing location; identical electrical specs and SOT-223 package; "-GE3" denotes lead-free/halogen-free compliance per same standard. No functional difference; qualified for same automotive and industrial temperature ranges (-55 to +150 °C). Select SiHFL9110TR-GE3 if sourcing from Digi-Key/Mouser preferred channels or requiring GE3 traceability documentation.
IRFL9014TRPbF Lower VDS (-60 V), lower RDS(on) (0.35 Ω), higher ID (-2.8 A); otherwise identical SOT-223 footprint and gate drive requirements. Better suited for 24 V systems where lower conduction loss dominates; not rated for -100 V transient surges. Choose IRFL9014TRPbF for cost-sensitive 12–24 V applications needing higher current and lower RDS(on), but verify system voltage margin.

Compared with IRFL9110, SiHFL9110TR-GE3 offers identical performance with alternate logistics coding, while IRFL9014TRPbF trades voltage rating for improved conduction efficiency in lower-voltage rails-requiring explicit voltage derating review before substitution.

Availability

IRFL9110 is available at Aetrix Electronics and suitable for reverse polarity protection, hot-swap control, and buck converter high-side switching requiring stable component supply across industrial, medical, and test equipment programs.

Supply support for IRFL9110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power handling and thermal performance.

The IRFL9110 belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for ruggedness in unclamped inductive switching and compact thermal management in surface-mount power systems.

FAQ

What is the maximum continuous drain current for IRFL9110 at 100 °C case temperature?

The IRFL9110 supports -0.69 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-223 package; operation above this current requires active cooling or reduced ambient temperature to maintain junction temperature ≤ 150 °C. The IRFL9110 datasheet confirms linear derating at 0.025 W/°C beyond 25 °C case temperature.

Does IRFL9110 require a gate resistor for safe switching?

Yes, a gate resistor is recommended to control dV/dt and prevent oscillation during switching. The IRFL9110 datasheet specifies Rg = 24 Ω in switching time test conditions (Fig. 10), yielding td(on) = 10 ns and tr = 27 ns. Using Rg < 10 Ω may cause ringing due to gate loop inductance (LG ≈ 6 nH), while Rg > 100 Ω increases switching losses. The IRFL9110 gate charge (Qg = 8.7 nC) informs optimal driver strength selection.

Can IRFL9110 be used in synchronous rectification?

No, the IRFL9110 is not designed for synchronous rectification. Its body diode has relatively high forward voltage (VSD = -5.5 V at -1.1 A) and slow recovery (trr = 80–160 ns), resulting in excessive conduction and switching losses compared to dedicated synchronous rectifier MOSFETs. The IRFL9110 datasheet positions it for high-side switching-not bidirectional conduction-and does not specify figure-of-merit metrics like Qg/RDS(on) needed for rectifier optimization.

What is the thermal resistance from junction to ambient for IRFL9110 on a standard PCB?

The IRFL9110 has a maximum junction-to-ambient thermal resistance (RthJA) of 60 °C/W when mounted on a 1" square FR-4 PCB, per the Thermal Resistance Ratings table. This value assumes no additional heatsink; adding a 2 oz copper pour under the drain tab reduces effective RthJA by ~20–30%. The IRFL9110 datasheet notes that RthJA varies significantly with board layout, making thermal simulation essential for designs dissipating >1 W.

Is IRFL9110 suitable for automotive applications?

The IRFL9110 is qualified for operation from -55 °C to +150 °C junction temperature and meets AEC-Q101 stress test requirements per Vishay's reliability reports (document 91196). However, it is not officially AEC-Q101 certified-Vishay lists it as "suitable for automotive" based on test data but does not issue AEC qualification certificates for this part number. For safety-critical automotive use, confirm compliance with your Tier 1's specific qualification protocol before design-in of IRFL9110.

IRFL9110 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta), 3.1W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

IRFL9110 FAQ

1.How can I place an order for IRFL9110 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL9110 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL9110 reliable?

The price and inventory of IRFL9110 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL9110 is usually 5 days.

3.What payment methods are accepted for IRFL9110?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL9110 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL9110?

IRFL9110 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL9110 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL9110?

For technical support, including IRFL9110 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL9110 requirements.

6.How does Aetrix verify that IRFL9110 is sourced from the original manufacturer or authorized distributors?

All IRFL9110 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL9110 meets industry standards.

7.What is the process for return or replacement of IRFL9110?

All IRFL9110 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL9110, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL9110 part is unused and in its original packaging.

Return procedure for IRFL9110:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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