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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFL9110PBF

Name: IRFL9110PBF
Brand: Vishay Siliconix
SKU: IRFL9110PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL9110PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL9110PBF.pdf

Description:: MOSFET P-CH 100V 1.1A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFL9110PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in SOT-223 package, rated for -100 V V_DS, 1.2 Ω R_DS(on) at V_GS = -10 V, 3.1 W power dissipation at T_C = 25 °C, and -8.8 A pulsed drain current. It serves as a high-side load switch or reverse-polarity protection device in DC power management circuits.

For engineers reviewing the IRFL9110PBF datasheet, IRFL9110PBF pinout, IRFL9110PBF application, or IRFL9110PBF equivalent, key selection criteria include its -100 V blocking capability, repetitive avalanche rating (E_AS = 100 mJ), fast switching (t_r = 27 ns), thermal performance on PCB mount (R_thJA = 60 °C/W), and compatibility with standard SOT-223 pick-and-place assembly.

Technical Context

This MOSFET uses third-generation trench-gate silicon technology optimized for ruggedness and low conduction loss. Its gate threshold voltage range (-2.0 to -4.0 V) supports both logic-level and standard -10 V drive, while the integrated body diode exhibits t_rr = 80–160 ns and Q_rr = 0.15–0.30 μC for controlled commutation.

The device is specified for operation from -55 °C to +150 °C junction temperature and features dynamic dv/dt immunity (-5.5 V/ns), making it suitable for inductive load switching where voltage transients are present. Its SOT-223 package provides enhanced thermal dissipation over standard SOT-23 via an enlarged drain tab.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - supports high-side switching in 48 V industrial bus and automotive battery-referenced systems
R_DS(on) @ V_GS = -10 V	1.2 Ω max - enables <1.3 W conduction loss at -1.1 A continuous current
I_D continuous @ T_C = 25 °C	-1.1 A - defines maximum steady-state load current with heatsinked case
E_AS	100 mJ - allows safe unclamped inductive energy absorption without external snubber
Q_g	8.7 nC max - determines gate drive power requirement and switching speed with 24 Ω resistor
t_r / t_f	27 ns / 17 ns - enables >1 MHz switching in synchronous buck or OR-ing applications
R_thJA (PCB mount)	60 °C/W - sets thermal rise of 120 °C at 2.0 W dissipation on 1" FR-4 board

Pinout & Package

SOT-223 package with exposed drain tab for thermal conduction; 3-pin surface-mount outline conforming to JEDEC TO-261AA. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires -10 V for full enhancement; ±20 V absolute max rating
Pin 2 (D)	Drain	High-voltage terminal; electrically connected to exposed metal tab for heatsinking
Pin 3 (S)	Source	Reference node for gate drive; connects to system ground or positive rail in high-side configuration

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without level-shifting circuitry in 12–48 V DC systems
Repetitive avalanche rated	Supports robust operation under inductive turn-off stress without derating or external clamping
Dynamic dv/dt immunity	-5.5 V/ns rating prevents false turn-on during fast voltage transients in motor or solenoid drivers
SOT-223 thermal design	Exceeds 1.25 W power dissipation on standard PCB-2.5× higher than SOT-23 equivalents
Fast switching with low Q_gd/Q_g	Q_gd = 4.1 nC / Q_g = 8.7 nC ratio improves Miller immunity and reduces switching loss

Applications

Reverse Polarity Protection	High-Side Load Switch
Use Scenario: Prevents damage to downstream electronics when input power is connected with reversed polarity in automotive infotainment or industrial control modules. IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between input supply and system ground return path. Use Value: Eliminates need for series diode; achieves <0.5 V drop at 1 A versus >0.7 V for Schottky, improving efficiency and thermal margin.	Use Scenario: Enables software-controlled power-up sequencing of microcontroller peripherals or sensor subsystems in battery-powered IoT nodes. IC Role / Device Role / Timing Role: High-side switch isolating 3.3 V or 5 V rail from load; driven directly by MCU GPIO with pull-up to V_CC. Use Value: V_GS(th) range (-2.0 to -4.0 V) ensures reliable turn-on with 3.3 V logic; low R_DS(on) minimizes dropout under peak load.
Motor/Actuator Driver	OR-ing Diode Replacement
Use Scenario: Controls 24 V DC solenoids or small brushed motors in programmable logic controllers (PLCs) with PWM duty cycle modulation. IC Role / Device Role / Timing Role: Low-side or high-side switching element; used with freewheeling diode or synchronous rectification. Use Value: Avalanche rating absorbs inductive kickback; fast t_r/t_f supports 20–50 kHz PWM without excessive switching loss.	Use Scenario: Replaces discrete Schottky diodes in redundant 12 V power supplies to reduce forward voltage drop and heat generation. IC Role / Device Role / Timing Role: Active OR-ing switch placed between two independent 12 V sources and common output bus. Use Value: R_DS(on) = 1.2 Ω yields ~1.3 V drop at 1.1 A - lower than typical 0.45 V Schottky at same current due to thermal derating in compact layout.

Reverse Polarity Protection

High-Side Load Switch

Use Scenario: Prevents damage to downstream electronics when input power is connected with reversed polarity in automotive infotainment or industrial control modules.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between input supply and system ground return path.

Use Value: Eliminates need for series diode; achieves <0.5 V drop at 1 A versus >0.7 V for Schottky, improving efficiency and thermal margin.

Use Scenario: Enables software-controlled power-up sequencing of microcontroller peripherals or sensor subsystems in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: High-side switch isolating 3.3 V or 5 V rail from load; driven directly by MCU GPIO with pull-up to V_CC.

Use Value: V_GS(th) range (-2.0 to -4.0 V) ensures reliable turn-on with 3.3 V logic; low R_DS(on) minimizes dropout under peak load.

Motor/Actuator Driver

OR-ing Diode Replacement

Use Scenario: Controls 24 V DC solenoids or small brushed motors in programmable logic controllers (PLCs) with PWM duty cycle modulation.

IC Role / Device Role / Timing Role: Low-side or high-side switching element; used with freewheeling diode or synchronous rectification.

Use Value: Avalanche rating absorbs inductive kickback; fast t_r/t_f supports 20–50 kHz PWM without excessive switching loss.

Use Scenario: Replaces discrete Schottky diodes in redundant 12 V power supplies to reduce forward voltage drop and heat generation.

IC Role / Device Role / Timing Role: Active OR-ing switch placed between two independent 12 V sources and common output bus.

Use Value: R_DS(on) = 1.2 Ω yields ~1.3 V drop at 1.1 A - lower than typical 0.45 V Schottky at same current due to thermal derating in compact layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFL9110TR-GE3	Same die, lead-free/halogen-free SOT-223 package; identical R_DS(on), V_DS, and Q_g; marked "FF"	No functional difference; preferred for RoHS-compliant production	Select SiHFL9110TR-GE3 when halogen-free compliance is required per IPC-1752A.
IRFL9014PBF	Lower V_DS (-60 V), lower R_DS(on) (0.35 Ω), higher I_D (-2.8 A); same SOT-223 package and pinout	Better suited for 24 V systems requiring lower conduction loss; not rated for -100 V bus fault conditions	Choose IRFL9014PBF only if system max voltage ≤ 40 V and higher current handling is prioritized over voltage margin.

Compared with SiHFL9110TR-GE3, IRFL9110PBF shares identical electrical specs but differs in Pb-free status; compared with IRFL9014PBF, IRFL9110PBF trades lower R_DS(on) for higher voltage capability-critical for 48 V telecom or industrial backup power where transient overvoltage exceeds 60 V.

Availability

IRFL9110PBF is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, motor actuation, and OR-ing diode replacement requiring stable component supply across automotive, industrial control, and embedded power systems.

Supply support for IRFL9110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and automotive environments.

The IRFL9110PBF belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for ruggedness in inductive switching applications with emphasis on avalanche energy handling and thermal stability in surface-mount packages.

FAQ

What is the maximum continuous drain current for IRFL9110PBF at 100 °C case temperature?

The IRFL9110PBF supports -0.69 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-223 package under sustained power dissipation; designers must ensure PCB copper area and airflow maintain case temperature within this limit to avoid exceeding R_DS(on) drift or junction temperature violation.

Does IRFL9110PBF require a gate driver IC for PWM operation at 100 kHz?

The IRFL9110PBF can be driven directly by a 3.3 V or 5 V microcontroller GPIO in low-frequency switching (<10 kHz), but for reliable 100 kHz PWM, a dedicated gate driver is recommended. Its 8.7 nC total gate charge and -2.0 to -4.0 V threshold demand sufficient peak current to charge/discharge the gate quickly; without a driver, slow edges increase switching losses and risk shoot-through in half-bridge configurations.

Is IRFL9110PBF suitable for reverse battery protection in automotive 12 V systems?

Yes, IRFL9110PBF is suitable for reverse battery protection in 12 V automotive systems. Its -100 V V_DS rating provides ample margin against load dump transients (up to ±60 V per ISO 7637-2), and its -5.5 V/ns dv/dt immunity prevents spurious turn-on during cranking pulses. The device's -1.1 A continuous rating aligns with typical infotainment or ECU module current draw.

What is the body diode forward voltage of IRFL9110PBF at -1.1 A and 25 °C?

The body diode forward voltage (V_SD) of IRFL9110PBF is -5.5 V maximum at T_J = 25 °C, I_S = -1.1 A, and V_GS = 0 V. This relatively high drop reflects the trade-off for high-voltage P-channel construction; it is significantly higher than Schottky diodes but acceptable in low-duty-cycle freewheeling paths where conduction time is brief.

Can IRFL9110PBF be paralleled with identical units to increase current capacity?

Yes, IRFL9110PBF is designed for ease of paralleling, as stated in its features list. Its negative temperature coefficient of R_DS(on) promotes current sharing among parallel devices, and matched threshold voltage distribution (-2.0 to -4.0 V) minimizes static imbalance. For stable operation, use individual gate resistors (≥10 Ω) and symmetrical PCB layout to equalize parasitic inductance and thermal coupling.

IRFL9110PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 660mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL9110PBF FAQ

1.How can I place an order for IRFL9110PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL9110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL9110PBF reliable?

The price and inventory of IRFL9110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL9110PBF is usually 5 days.

3.What payment methods are accepted for IRFL9110PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL9110PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL9110PBF?

IRFL9110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL9110PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL9110PBF?

For technical support, including IRFL9110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL9110PBF requirements.

6.How does Aetrix verify that IRFL9110PBF is sourced from the original manufacturer or authorized distributors?

All IRFL9110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL9110PBF meets industry standards.

7.What is the process for return or replacement of IRFL9110PBF?

All IRFL9110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFL9110PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL9110PBF part is unused and in its original packaging.

Return procedure for IRFL9110PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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