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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFL9110TR

Name: IRFL9110TR
Brand: Vishay Siliconix
SKU: IRFL9110TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL9110TR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL9110TR.pdf

Description:: MOSFET P-CH 100V 1.1A SOT223

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Product details

Overview

IRFL9110TR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in SOT-223 package, rated for -100 V V_DS, 1.2 Ω R_DS(on) at V_GS = -10 V, and -1.1 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for low-voltage DC-DC conversion and load switching in industrial power supplies.

For engineers reviewing the IRFL9110TR datasheet, IRFL9110TR pinout, IRFL9110TR application, or IRFL9110TR equivalent, key selection criteria include its -100 V blocking capability, SOT-223 thermal performance (2.0 W PCB-mount power dissipation), dynamic dv/dt rating (-5.5 V/ns), and gate charge profile (Q_g = 8.7 nC) for driver compatibility assessment.

Technical Context

This device operates as a high-side or low-side switch in DC power control circuits, with gate threshold voltage V_GS(th) between -2.0 V and -4.0 V, enabling compatibility with standard logic-level and microcontroller-driven gate drivers. Its body diode exhibits t_rr = 80–160 ns and Q_rr = 0.15–0.30 μC, supporting moderate-frequency synchronous rectification.

The MOSFET features third-generation silicon design with ruggedized construction, including 100 mJ single-pulse avalanche energy (E_AS) and -8.8 A pulsed drain current (I_DM). Thermal resistance R_thJA is 60 °C/W (PCB mount), and R_thJC is 40 °C/W, confirming suitability for thermally constrained surface-mount applications without external heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Supports high-side switching in 48 V and 60 V DC bus systems with margin.
R_DS(on)	1.2 Ω @ V_GS = -10 V - Enables <1.3 W conduction loss at 1.1 A, suitable for compact low-power SMPS.
Q_g	8.7 nC - Matches common low-power gate drivers (e.g., TC4420, UCC27517) without excessive drive strength requirement.
I_D (cont.)	-1.1 A @ T_C = 25 °C - Rated for sustained load switching in battery management and LED drivers.
E_AS	100 mJ - Withstands unclamped inductive turn-off transients in relay or solenoid drive circuits.
dv/dt	-5.5 V/ns - Resists false turn-on during high-slew-rate noise events in motor control interfaces.
t_r/t_f	27 ns / 17 ns - Enables switching above 500 kHz in resonant topologies with minimal overlap loss.

Pinout & Package

SOT-223 package with exposed drain tab for enhanced thermal conduction; 3-pin configuration (G, D, S) with pin 1 = Gate, pin 2 = Drain (tab), pin 3 = Source; JEDEC TO-261AA compliant outline; 6.3–6.7 mm × 3.3–3.7 mm footprint; 1.55–1.80 mm height.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Accepts -10 V gate drive; threshold range (-2.0 to -4.0 V) ensures reliable turn-on with 3.3 V/5 V logic via level shift or inverting driver.
Pin 2 (Drain)	High-side power node	Exposed copper tab serves as primary heat path; electrically connected to drain; requires isolation from PCB ground plane.
Pin 3 (Source)	Reference return	Common node for gate drive reference and load current return; ties to system ground or floating rail depending on topology.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables robust operation in inductive load switching without external snubbers (EAR = 0.31 mJ, I_AR = -1.1 A).
Dynamic dv/dt immunity	Rated -5.5 V/ns - suppresses parasitic turn-on in high-noise environments like motor drives and automotive ECUs.
SOT-223 thermal performance	2.0 W power dissipation on 1"² FR-4 PCB - eliminates need for discrete heatsinks in space-constrained designs.
Fast switching speed	t_d(on) = 10 ns, t_r = 27 ns - reduces switching losses in high-frequency DC-DC converters (>300 kHz).
Low gate charge	Q_g = 8.7 nC - lowers driver power consumption and simplifies gate drive circuitry versus comparable -100 V P-channel devices.

Applications

Industrial Power Sequencing	Battery-Powered Load Switching
Use Scenario: Controlled power-up of FPGA, MCU, or sensor subsystems in programmable logic controllers and remote I/O modules. IC Role / Device Role / Timing Role: High-side P-channel switch enabling precise inrush current limiting and sequencing delay via RC gate control. Use Value: Leverages -100 V rating and 1.2 Ω R_DS(on) to support 24–48 V industrial rails while maintaining <25 mV dropout at 1 A load.	Use Scenario: ON/OFF control of peripheral modules (GPS, BLE radio, display backlight) in portable test equipment and handheld meters. IC Role / Device Role / Timing Role: Low-quiescent-load load switch isolating downstream circuitry during sleep mode. Use Value: Uses -2.0 to -4.0 V V_GS(th) to ensure full enhancement with 3.3 V GPIO, minimizing leakage (<100 μA IDSS) during standby.
DC-DC Converter Synchronous Rectifier	Automotive Body Control Module
Use Scenario: Secondary-side rectification in isolated flyback or forward converters powering 3.3 V/5 V logic rails. IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch replacing Schottky diode to reduce conduction loss. Use Value: Achieves >92% efficiency at 1 A output by cutting forward drop vs. diode; body diode t_rr ≤ 160 ns prevents shoot-through.	Use Scenario: Driving door lock actuators, mirror heaters, or interior lighting loads in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Protected high-side switch interfacing with CAN/LIN microcontrollers for load control. Use Value: Survives load-dump transients (ISO 7637-2) using -100 V rating and 100 mJ E_AS, eliminating need for external TVS.

Industrial Power Sequencing

Battery-Powered Load Switching

Use Scenario: Controlled power-up of FPGA, MCU, or sensor subsystems in programmable logic controllers and remote I/O modules.

IC Role / Device Role / Timing Role: High-side P-channel switch enabling precise inrush current limiting and sequencing delay via RC gate control.

Use Value: Leverages -100 V rating and 1.2 Ω R_DS(on) to support 24–48 V industrial rails while maintaining <25 mV dropout at 1 A load.

Use Scenario: ON/OFF control of peripheral modules (GPS, BLE radio, display backlight) in portable test equipment and handheld meters.

IC Role / Device Role / Timing Role: Low-quiescent-load load switch isolating downstream circuitry during sleep mode.

Use Value: Uses -2.0 to -4.0 V V_GS(th) to ensure full enhancement with 3.3 V GPIO, minimizing leakage (<100 μA IDSS) during standby.

DC-DC Converter Synchronous Rectifier

Automotive Body Control Module

Use Scenario: Secondary-side rectification in isolated flyback or forward converters powering 3.3 V/5 V logic rails.

IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >92% efficiency at 1 A output by cutting forward drop vs. diode; body diode t_rr ≤ 160 ns prevents shoot-through.

Use Scenario: Driving door lock actuators, mirror heaters, or interior lighting loads in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Protected high-side switch interfacing with CAN/LIN microcontrollers for load control.

Use Value: Survives load-dump transients (ISO 7637-2) using -100 V rating and 100 mJ E_AS, eliminating need for external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFL9110TR-GE3	Same die, identical R_DS(on), Q_g, and avalanche ratings; differs only in lead-free/halogen-free compliance and manufacturing location (GE3 vs BE3).	No functional difference; GE3 variant uses alternate tape-and-reel packaging and RoHS-compliant plating per Vishay's material categorization doc 99912.	Select SiHFL9110TR-GE3 when halogen-free compliance is required per IPC-1752A or automotive OEM specifications.
IRFL9014TRPbF	Lower V_DS (-60 V), lower R_DS(on) (0.35 Ω), higher I_D (-2.8 A), but reduced E_AS (30 mJ) and no specified dv/dt rating.	Not suitable for 48 V+ systems or high-noise motor control; better for cost-sensitive 12–24 V load switches where avalanche robustness is secondary.	Choose IRFL9014TRPbF only for 24 V nominal systems requiring higher current and lower conduction loss, accepting reduced transient immunity.

Compared with SiHFL9110TR-GE3, IRFL9110TR offers identical electrical performance with BE3 manufacturing traceability; versus IRFL9014TRPbF, it trades higher R_DS(on) for critical -100 V rating, 100 mJ E_AS, and -5.5 V/ns dv/dt immunity-making it the sole choice for industrial 48 V power sequencing and automotive load-dump resilience.

Availability

IRFL9110TR is available at Aetrix Electronics and suitable for industrial power sequencing, battery-powered load switching, DC-DC converter synchronous rectification, and automotive body control module applications requiring stable component supply across multi-year production cycles.

Supply support for IRFL9110TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal efficiency, and reliability across industrial and automotive markets.

The IRFL9110TR belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered specifically for surface-mount power switching in space-constrained, thermally demanding applications such as programmable logic controllers and automotive ECUs.

FAQ

What is the maximum continuous drain current for IRFL9110TR at 100 °C case temperature?

The IRFL9110TR supports -0.69 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.025 W/°C and 3.1 W maximum power dissipation at 25 °C. This value reflects safe operation under sustained thermal stress without exceeding the 150 °C maximum junction temperature, assuming proper PCB copper area and airflow.

Does IRFL9110TR have a specified body diode reverse recovery time?

Yes, the IRFL9110TR specifies body diode reverse recovery time t_rr = 80–160 ns at T_J = 25 °C, I_F = -4.0 A, and dI/dt = 100 A/μs. This parameter is critical for synchronous rectifier use, as it determines minimum off-time to prevent shoot-through and influences switching loss in flyback and forward converters using this device.

Can IRFL9110TR be used as a direct replacement for IRFL9014TRPbF in existing designs?

No, IRFL9110TR is not a direct replacement for IRFL9014TRPbF due to its higher V_DS (-100 V vs. -60 V), higher R_DS(on) (1.2 Ω vs. 0.35 Ω), and different gate charge profile. While both are SOT-223 P-channel MOSFETs, substituting IRFL9110TR into a -60 V design may cause unnecessary voltage overhead and increased conduction loss unless the higher blocking voltage is required.

What is the gate-source leakage current specification for IRFL9110TR?

The IRFL9110TR has a maximum gate-source leakage current |I_GSS| of ±100 nA at V_GS = ±20 V, measured at T_J = 25 °C. This low leakage ensures stable gate bias in high-impedance drive circuits and minimizes power loss in battery-critical applications where gate drive current must be minimized over long standby periods.

Is IRFL9110TR suitable for avalanche energy handling in unclamped inductive switching?

Yes, IRFL9110TR is explicitly rated for repetitive avalanche operation with E_AR = 0.31 mJ and single-pulse E_AS = 100 mJ under defined test conditions (V_DD = -25 V, L = 7.7 mH, R_g = 25 Ω). This makes it suitable for driving relays, solenoids, and other inductive loads without external clamping components in properly designed circuits.

IRFL9110TR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 660mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL9110TR FAQ

1.How can I place an order for IRFL9110TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL9110TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL9110TR reliable?

The price and inventory of IRFL9110TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL9110TR is usually 5 days.

3.What payment methods are accepted for IRFL9110TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL9110TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL9110TR?

IRFL9110TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL9110TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL9110TR?

For technical support, including IRFL9110TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL9110TR requirements.

6.How does Aetrix verify that IRFL9110TR is sourced from the original manufacturer or authorized distributors?

All IRFL9110TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL9110TR meets industry standards.

7.What is the process for return or replacement of IRFL9110TR?

All IRFL9110TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFL9110TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL9110TR part is unused and in its original packaging.

Return procedure for IRFL9110TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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