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Vishay Siliconix IRFL9110TRPBF-BE3
- Part No.:
- IRFL9110TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
IRFL9110TRPBF-BE3.pdf
- Description:
- MOSFET P-CH 100V 1.1A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:3,930
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Product details
Overview
IRFL9110TRPBF-BE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in SOT-223 package, rated for -100 V VDS, 1.2 Ω RDS(on) at VGS = -10 V, and -1.1 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for high-side load switching in industrial power supplies and DC-DC converters.
For engineers reviewing the IRFL9110TRPBF-BE3 datasheet, IRFL9110TRPBF-BE3 pinout, IRFL9110TRPBF-BE3 application, or IRFL9110TRPBF-BE3 equivalent, key selection criteria include its -100 V blocking capability, SOT-223 thermal performance (2.0 W PCB-mount power dissipation), avalanche ruggedness (100 mJ single-pulse EAS), and compatibility with standard surface-mount assembly processes.
Technical Context
This device operates as a high-voltage P-channel switch with gate threshold voltage of -2.0 to -4.0 V and exhibits dynamic dv/dt immunity up to -5.5 V/ns. Its internal body diode has trr = 80–160 ns and Qrr = 0.15–0.30 μC, enabling reliable synchronous rectification or freewheeling in buck and flyback topologies.
The SOT-223 package integrates an enlarged drain tab for heatsinking, achieving RthJA = 60 °C/W (PCB mount) and RthJC = 40 °C/W. Total gate charge is 8.7 nC with Qgd/Qgs ratio of ~1.86, supporting efficient gate drive design using low-current logic-level sources.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Supports high-side switching in 48 V and 100 V bus systems without derating. |
| RDS(on) @ VGS = -10 V | 1.2 Ω - Delivers ≤1.0 W conduction loss at -0.9 A, suitable for low-power load switches. |
| ID Continuous @ TC = 25 °C | -1.1 A - Enables compact PCB-mount designs without external heatsink in ambient-limited applications. |
| EAS (Single Pulse) | 100 mJ - Withstands unclamped inductive turn-off events in relay drivers and solenoid controls. |
| Qg | 8.7 nC - Compatible with microcontroller GPIO or low-power gate drivers (e.g., TC4420) without buffering. |
| tr/tf | 27 ns / 17 ns - Enables >1 MHz switching in PWM-controlled LED dimmers and point-of-load regulators. |
| VSD @ IS = -1.1 A | -5.5 V - Body diode forward drop limits reverse recovery losses in bidirectional current paths. |
Pinout & Package
SOT-223 package with exposed drain tab for thermal conduction; 3-pin configuration (G, D, S) in standard JEDEC TO-261AA outline; lead (Pb)-free and halogen-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring -10 V for full enhancement; ±20 V absolute max rating protects against transient overvoltage. |
| Pin 2 (D) | Drain | High-side switched node; electrically connected to exposed tab for direct PCB copper pour heatsinking. |
| Pin 3 (S) | Source | Reference node for gate drive; tied to positive rail in high-side configurations; carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Rated for unlimited repetitive avalanche pulses up to IAR = -1.1 A and EAR = 0.31 mJ, enhancing reliability in inductive load switching. |
| Dynamic dv/dt immunity | Specified -5.5 V/ns - Suppresses false turn-on during high-slew-rate transients in motor drives and SMPS. |
| Surface-mount optimized | SOT-223 footprint enables automated placement and reflow soldering; thermal pad allows ≥2.0 W dissipation on 1" FR-4 PCB. |
| Fast switching | 27 ns rise time and 17 ns fall time - Reduces switching losses in 500 kHz–1 MHz DC-DC converters. |
| Low gate charge | 8.7 nC total gate charge - Minimizes driver power consumption and simplifies gate drive circuitry. |
Applications
| Industrial Power Sequencing | LED Constant-Current Driver |
|---|---|
|
Use Scenario: Controlled power-up of multiple subsystems in programmable logic controllers (PLCs) using sequenced high-side enable signals. IC Role / Device Role / Timing Role: High-side load switch managing 24–48 V rail delivery with precise timing control via microcontroller GPIO. Use Value: -100 V rating ensures margin against back-EMF; RDS(on) = 1.2 Ω limits voltage drop to <0.8 V at 0.6 A, preserving system efficiency. |
Use Scenario: Dimmable constant-current LED string driver in architectural lighting, where PWM dimming requires fast, low-loss switching. IC Role / Device Role / Timing Role: High-side PWM switch modulating current through LED string with minimal dead-time distortion. Use Value: 27 ns/17 ns switching times support >1 MHz PWM frequency; low Qg reduces gate driver loading and improves dimming linearity. |
| Automotive Body Control Module | DC-DC Buck Converter High-Side Switch |
|
Use Scenario: Load switching for interior lighting, window motors, and HVAC actuators in 12 V automotive systems with load-dump protection. IC Role / Device Role / Timing Role: Robust P-channel switch handling inductive loads with integrated avalanche energy absorption. Use Value: 100 mJ single-pulse EAS withstands ISO 7637-2 pulse 5a transients; -55 to +150 °C operating range meets AEC-Q101 requirements. |
Use Scenario: High-side synchronous rectifier in non-isolated buck converter for FPGA core voltage regulation (1.2 V @ 5 A). IC Role / Device Role / Timing Role: Fast-turning P-channel MOSFET replacing Schottky diode in high-efficiency step-down regulator. Use Value: Low RDS(on) cuts conduction loss vs. diode; body diode trr = 80–160 ns prevents shoot-through during dead-time transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFL9110TR-GE3 | Same die, identical electrical specs, but manufactured at alternate Vishay location with -GE3 suffix; RoHS-compliant tape-and-reel packaging. | No functional difference; fully interchangeable in all circuits where IRFL9110TRPBF-BE3 is used. | Select SiHFL9110TR-GE3 when sourcing from Vishay's GE3-certified production line or when dual-sourcing is required. |
| IRFL9014TRPBF-BE3 | Lower VDS (-60 V), lower RDS(on) (0.35 Ω), higher ID (-2.5 A); otherwise same SOT-223 package and pinout. | Better suited for 24 V systems requiring higher current and lower conduction loss; not rated for -100 V bus applications. | Choose IRFL9014TRPBF-BE3 only if system voltage remains ≤40 V and higher current capacity is prioritized over voltage margin. |
Compared with SiHFL9110TR-GE3, IRFL9110TRPBF-BE3 offers identical performance with alternate manufacturing traceability; versus IRFL9014TRPBF-BE3, it trades higher voltage rating for reduced current capability-making it optimal for 48–100 V industrial control where avalanche robustness outweighs RDS(on) minimization.
Availability
IRFL9110TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial power sequencing, LED constant-current drivers, automotive body control modules, and DC-DC buck converter high-side switches requiring stable component supply across extended product lifecycles.
Supply support for IRFL9110TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and high-voltage reliability.
The IRFL9110TRPBF-BE3 belongs to Vishay's third-generation high-voltage P-channel power MOSFET family, engineered for industrial and automotive load switching where avalanche capability, surface-mount thermal efficiency, and gate-drive simplicity are critical.
FAQ
What is the maximum junction temperature for IRFL9110TRPBF-BE3?
The IRFL9110TRPBF-BE3 has an operating junction temperature range of -55 °C to +150 °C. This upper limit defines the thermal boundary for safe continuous operation; exceeding 150 °C risks permanent degradation of the silicon die and packaging integrity. Derating curves in the datasheet show how continuous current must be reduced above 25 °C case temperature to maintain this limit.
Is IRFL9110TRPBF-BE3 suitable for logic-level gate drive?
The IRFL9110TRPBF-BE3 is not a logic-level MOSFET: its gate threshold voltage ranges from -2.0 V to -4.0 V, and full enhancement (RDS(on) = 1.2 Ω) requires VGS = -10 V. Driving it directly from 3.3 V or 5 V logic outputs will result in high RDS(on) and excessive heating; a level-shifting gate driver is required for reliable operation.
Does IRFL9110TRPBF-BE3 have an integrated body diode?
Yes, the IRFL9110TRPBF-BE3 includes an intrinsic body diode formed by the P-channel MOSFET structure. Its forward voltage is -5.5 V at -1.1 A and 25 °C, with reverse recovery time of 80–160 ns and recovered charge of 0.15–0.30 μC. This diode enables freewheeling in inductive loads but is not optimized for synchronous rectification.
What is the thermal resistance from junction to ambient for IRFL9110TRPBF-BE3?
When mounted on a 1" square FR-4 PCB, the IRFL9110TRPBF-BE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 60 °C/W. This value assumes standard JEDEC test conditions and determines how much temperature rise occurs per watt of power dissipated-critical for calculating safe operating area in thermally constrained layouts.
Can IRFL9110TRPBF-BE3 replace IRFL9110TRPBF in a design?
Yes, IRFL9110TRPBF-BE3 is a direct replacement for IRFL9110TRPBF: the "-BE3" suffix indicates alternate manufacturing location and does not affect electrical, thermal, or mechanical specifications. Both share identical marking code (FF), SOT-223 package, and full compliance with Vishay's S21-0322-Rev. G specification.
IRFL9110TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 660mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
IRFL9110TRPBF-BE3 FAQ
1.How can I place an order for IRFL9110TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFL9110TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFL9110TRPBF-BE3 reliable?
The price and inventory of IRFL9110TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL9110TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFL9110TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL9110TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFL9110TRPBF-BE3?
IRFL9110TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFL9110TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFL9110TRPBF-BE3?
For technical support, including IRFL9110TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL9110TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFL9110TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFL9110TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL9110TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFL9110TRPBF-BE3?
All IRFL9110TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL9110TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFL9110TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFL9110TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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