Vishay Siliconix IRFP044PBF

Overview

IRFP044PBF from Vishay Siliconix is a 60 V, 57 A N-channel power MOSFET in TO-247 package with R_DS(on) = 0.028 Ω at V_GS = 10 V, 95 nC total gate charge, and 175 °C maximum junction temperature. It delivers high-current switching for DC-DC converters, motor drives, and UPS systems where ruggedness and thermal stability are critical.

For engineers reviewing the IRFP044PBF datasheet, IRFP044PBF pinout, IRFP044PBF application, or IRFP044PBF equivalent, key selection criteria include its isolated mounting hole, dynamic dV/dt rating of 4.5 V/ns, body diode reverse recovery time (140–300 ns), and suitability for paralleling in high-power industrial inverters and battery-powered traction circuits.

Technical Context

This third-generation silicon power MOSFET uses planar V-groove technology to achieve low conduction loss and fast switching with controlled dV/dt immunity. Its design integrates an intrinsic body diode rated for 57 A continuous source-drain current and supports unclamped inductive switching up to 53 mJ avalanche energy.

The device operates across –55 °C to +175 °C with thermal resistance R_thJC = 0.83 °C/W and features a flat, greased-case interface (R_thCS = 0.24 °C/W) optimized for heatsink mounting. Gate drive requires only 10 V for full enhancement, with threshold voltage between 2.0 V and 4.0 V.

Key Specifications

Pinout & Package

IRFP044PBF is housed in a TO-247AC package with isolated central mounting hole, creepage-enhanced pin spacing, and drain-connected tab for direct heatsink attachment. The case serves as the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP55NF06 and IXTH50N60L2, IRFP044PBF uniquely balances ultra-low on-resistance, industry-leading dV/dt immunity, and TO-247 thermal performance-making it optimal for high-current, high-reliability 48–60 V industrial switching where layout-induced noise and thermal density are primary constraints.

Availability

IRFP044PBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP044PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedized design.

The IRFP044PBF belongs to Vishay's third-generation high-current power MOSFET family, engineered specifically for industrial motor control, UPS, and high-efficiency DC-DC conversion where thermal resilience and switching robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for IRFP044PBF at 100 °C case temperature?

The IRFP044PBF supports 40 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247 package under sustained high-temperature operation. Designers must verify heatsink performance to maintain case temperature ≤100 °C when operating near this limit. The IRFP044PBF datasheet provides Fig. 9 (Maximum Drain Current vs. Case Temperature) for precise derating guidance.

Does IRFP044PBF have a built-in body diode, and what are its key parameters?

Yes, the IRFP044PBF integrates a monolithic body diode with 57 A continuous forward current rating and 230 A pulsed capability. Key parameters include V_SD = 2.5 V at 57 A and T_J = 25 °C, reverse recovery time t_rr = 140–300 ns, and Q_rr = 1.2–2.8 µC. These values are measured under standardized conditions (IF = 52 A, dI/dt = 100 A/µs) and directly impact snubber design and EMI in hard-switched topologies using the IRFP044PBF.

Is IRFP044PBF RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRFP044PBF is RoHS-compliant. The 'PbF' suffix denotes lead (Pb)-free terminations per EU RoHS Directive 2011/65/EU. Vishay confirms compliance through material declarations and testing; exemptions for high-melting-point solder do not apply to this part. The IRFP044PBF uses 100 % matte tin plating and meets JEDEC J-STD-609A Class 1 marking requirements. Full compliance documentation is accessible via Vishay's website using document number 91197.

What is the gate threshold voltage range for IRFP044PBF, and how does it affect drive circuit design?

The IRFP044PBF has a gate threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at T_J = 25 °C. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature variation. Driving the IRFP044PBF with only 5 V risks incomplete turn-on and excessive R_DS(on), increasing conduction loss. The IRFP044PBF datasheet specifies R_DS(on) only at V_GS = 10 V, confirming its non-logic-level classification.

Can IRFP044PBF be paralleled with identical units, and what design considerations apply?

Yes, the IRFP044PBF is explicitly designed for ease of paralleling, as noted in its FEATURES list. Successful parallel operation requires matched gate resistors (≤5 % tolerance), symmetrical PCB layout to minimize loop inductance imbalance, and individual gate drive paths to avoid oscillation. Thermal coupling between devices must also be uniform. The IRFP044PBF's positive temperature coefficient of R_DS(on) (see Fig. 4) inherently promotes current sharing, but layout symmetry remains critical for stable multi-device operation.