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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFP048RPBF

Name: IRFP048RPBF
Brand: Vishay Siliconix
SKU: IRFP048RPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP048RPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP048RPBF.pdf

Description:: MOSFET N-CH 60V 70A TO247-3

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Product details

Overview

IRFP048RPBF from Vishay Siliconix is a 60 V, 70 A N-channel power MOSFET in TO-247AC package, optimized for high-current switching in DC-DC converters, motor drives, and UPS systems with R_DS(on) = 0.018 Ω at V_GS = 10 V, Q_g = 110 nC, and 175 °C maximum junction temperature.

For engineers reviewing the IRFP048RPBF datasheet, IRFP048RPBF pinout, IRFP048RPBF application, or IRFP048RPBF equivalent, this page delivers verified electrical specs, thermal performance data, gate drive requirements, avalanche energy rating (200 mJ), and real-world design context for industrial power stage implementation.

Technical Context

This third-generation planar VDMOS device uses ruggedized die construction to support repetitive unclamped inductive switching (UIS) up to 200 mJ and high dV/dt immunity (4.5 V/ns). Its low gate charge (Q_g = 110 nC) and moderate input capacitance (C_iss = 2400 pF) enable efficient operation with standard gate drivers at frequencies up to several hundred kHz.

The TO-247AC package features an isolated central mounting hole and enhanced creepage distances between drain and source leads, meeting safety requirements for commercial-industrial equipment. Thermal resistance from junction-to-case is 0.80 °C/W, enabling high-power dissipation when mounted on heatsinks with greased interface.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V bus applications with margin
R_DS(on) @ V_GS = 10 V	0.018 Ω - Enables <1.5 W conduction loss at 70 A continuous current
Q_g	110 nC - Determines gate driver current requirement (~11 mA avg. for 1 µs turn-on)
E_AS	200 mJ - Supports robust unclamped inductive switching without snubbers
T_J(max)	+175 °C - Allows operation in high-ambient environments with derated current
R_thJC	0.80 °C/W - Defines minimum heatsink thermal resistance needed for 190 W dissipation
I_D @ T_C = 100 °C	52 A - Realistic continuous current limit under typical heatsink conditions

Pinout & Package

IRFP048RPBF is housed in a TO-247AC package with three leads: Gate (pin 1), Drain (pins 2 and 4), and Source (pin 3). The package includes an isolated central mounting hole for mechanical stability and improved thermal path to heatsink. Dimensions conform to JEDEC TO-247 outline with facility-specific variants (codes 9/Y/N).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 0–10 V logic-level signal; requires ≤110 nC charge for full enhancement
2 & 4 (Drain)	High-side power terminal	Electrically connected internally; both pins carry full load current and must be routed with low-inductance paths
3 (Source)	Reference/return terminal	Serves as local ground reference for gate drive; internal source inductance (L_S = 13 nH) affects switching waveform fidelity

Key Features

Feature	Design Value
Dynamic dV/dt rating	4.5 V/ns - Prevents false turn-on during fast voltage transients in bridge configurations
Isolated central mounting hole	Enables secure mechanical attachment without shorting drain to heatsink; improves thermal reliability
Ease of paralleling	Low R_DS(on) temperature coefficient ensures current sharing across multiple devices without external ballasting
Simple drive requirements	Threshold voltage (2.0–4.0 V) and gate charge profile compatible with standard 10 V logic drivers
Body diode recovery	t_rr = 120–180 ns with Q_rr = 0.50–0.80 μC - Reduces switching losses in synchronous rectification and freewheeling paths

Applications

Motor Drive Inverter Stage	DC-DC Synchronous Rectifier
Use Scenario: High-current half-bridge in 24–48 V BLDC motor controllers driving >5 kW loads. IC Role / Device Role / Timing Role: Low-side switching element handling continuous 52 A at 100 °C case temperature. Use Value: 0.018 Ω R_DS(on) minimizes I²R losses during PWM conduction, improving efficiency by ~1.2% vs. 0.025 Ω alternatives at 40 A.	Use Scenario: Secondary-side synchronous rectification in isolated 48 V input telecom PSUs delivering 12 V/100 A output. IC Role / Device Role / Timing Role: Fast-recovery body diode and low-R_DS(on) channel used for bidirectional current handling during dead-time and active conduction. Use Value: t_rr = 120–180 ns and Q_rr = 0.50–0.80 μC reduce reverse recovery losses by 35% compared to legacy 60 V MOSFETs with >300 ns t_rr.
Uninterruptible Power Supply (UPS) Output Stage	Industrial DC Bus Protection Switch
Use Scenario: Full-bridge inverter output stage converting 380 V DC bus to 230 V AC with high peak current capability. IC Role / Device Role / Timing Role: High-current switching device rated for 290 A pulsed drain current and 200 mJ single-pulse avalanche energy. Use Value: 200 mJ E_AS rating allows safe operation during output short-circuit events without external clamping circuits.	Use Scenario: Solid-state main disconnect switch in programmable logic controller (PLC) backplane with 60 V DC supply rail. IC Role / Device Role / Timing Role: Normally-off power switch controlled via microcontroller GPIO, providing overcurrent and thermal fault isolation. Use Value: 175 °C T_J(max) and 52 A continuous rating at 100 °C case enable reliable operation in sealed enclosures with limited airflow.

Motor Drive Inverter Stage

DC-DC Synchronous Rectifier

Use Scenario: High-current half-bridge in 24–48 V BLDC motor controllers driving >5 kW loads.

IC Role / Device Role / Timing Role: Low-side switching element handling continuous 52 A at 100 °C case temperature.

Use Value: 0.018 Ω R_DS(on) minimizes I²R losses during PWM conduction, improving efficiency by ~1.2% vs. 0.025 Ω alternatives at 40 A.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V input telecom PSUs delivering 12 V/100 A output.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-R_DS(on) channel used for bidirectional current handling during dead-time and active conduction.

Use Value: t_rr = 120–180 ns and Q_rr = 0.50–0.80 μC reduce reverse recovery losses by 35% compared to legacy 60 V MOSFETs with >300 ns t_rr.

Uninterruptible Power Supply (UPS) Output Stage

Industrial DC Bus Protection Switch

Use Scenario: Full-bridge inverter output stage converting 380 V DC bus to 230 V AC with high peak current capability.

IC Role / Device Role / Timing Role: High-current switching device rated for 290 A pulsed drain current and 200 mJ single-pulse avalanche energy.

Use Value: 200 mJ E_AS rating allows safe operation during output short-circuit events without external clamping circuits.

Use Scenario: Solid-state main disconnect switch in programmable logic controller (PLC) backplane with 60 V DC supply rail.

IC Role / Device Role / Timing Role: Normally-off power switch controlled via microcontroller GPIO, providing overcurrent and thermal fault isolation.

Use Value: 175 °C T_J(max) and 52 A continuous rating at 100 °C case enable reliable operation in sealed enclosures with limited airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 0.014 Ω (lower), Q_g = 120 nC (higher), TO-220FP package	Limited to 60 W P_D; unsuitable for >100 W continuous dissipation without forced cooling	Prefer IRFP048RPBF where >100 W power handling or TO-247 thermal performance is required
IXTH50N60L2	600 V rating, R_DS(on) = 0.075 Ω, Q_g = 135 nC, TO-247 package	Higher voltage class; higher R_DS(on) increases conduction loss in 48 V systems by ~4.2 W at 50 A	Select IRFP048RPBF for optimized 60 V systems prioritizing low conduction loss and thermal headroom

Compared with STP60NF06 and IXTH50N60L2, IRFP048RPBF delivers superior thermal performance (0.80 °C/W R_thJC) and balanced switching-conduction trade-off (110 nC Q_g, 0.018 Ω R_DS(on)) for 48 V industrial power stages requiring sustained >100 W dissipation.

Availability

IRFP048RPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFP048RPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFP048RPBF belongs to Vishay's third-generation power MOSFET family, engineered for high-efficiency switching in commercial-industrial power conversion where ruggedness, thermal stability, and ease of paralleling are critical.

FAQ

What is the maximum continuous drain current for IRFP048RPBF at 100 °C case temperature?

The IRFP048RPBF supports 52 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating from the 70 A rating at 25 °C case temperature and assumes proper heatsinking with R_thJC = 0.80 °C/W. Exceeding this current risks exceeding the 175 °C maximum junction temperature.

Does IRFP048RPBF have a built-in body diode, and what are its key recovery characteristics?

Yes, IRFP048RPBF integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Its key recovery specs include reverse recovery time (t_rr) of 120–180 ns and reverse recovery charge (Q_rr) of 0.50–0.80 μC at T_J = 25 °C, I_F = 72 A, and dI/dt = 100 A/μs. These values are critical for minimizing losses in synchronous rectification and freewheeling applications.

What gate drive voltage is required to fully enhance IRFP048RPBF, and what is its threshold range?

The IRFP048RPBF has a gate-source threshold voltage (V_GS(th)) range of 2.0–4.0 V at I_D = 250 μA, but full enhancement for low R_DS(on) requires V_GS = 10 V, where R_DS(on) is guaranteed at 0.018 Ω. Driving below 8 V increases on-resistance significantly; 10 V ensures optimal conduction performance while remaining compatible with standard logic-level gate drivers.

Can IRFP048RPBF be used in parallel configurations, and what design considerations apply?

Yes, IRFP048RPBF is designed for easy paralleling due to its positive R_DS(on) temperature coefficient, which promotes natural current sharing across multiple devices. Key design practices include matched gate drive impedance, symmetrical PCB layout with identical trace lengths, and individual gate resistors (≥5 Ω) to dampen oscillation. The TO-247AC package's dual drain pins further aid current distribution.

What is the avalanche energy rating of IRFP048RPBF, and under what conditions is it validated?

The IRFP048RPBF is rated for 200 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 25 V, starting T_J = 25 °C, L = 43 μH, R_g = 25 Ω, and I_AS = 73 A. This rating enables robust operation during inductive switching faults without external snubbers, provided pulse width and duty cycle remain within limits defined in Figure 12 of the datasheet.

IRFP048RPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 44A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP048RPBF FAQ

1.How can I place an order for IRFP048RPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP048RPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP048RPBF reliable?

The price and inventory of IRFP048RPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP048RPBF is usually 5 days.

3.What payment methods are accepted for IRFP048RPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP048RPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP048RPBF?

IRFP048RPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP048RPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP048RPBF?

For technical support, including IRFP048RPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP048RPBF requirements.

6.How does Aetrix verify that IRFP048RPBF is sourced from the original manufacturer or authorized distributors?

All IRFP048RPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP048RPBF meets industry standards.

7.What is the process for return or replacement of IRFP048RPBF?

All IRFP048RPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP048RPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP048RPBF part is unused and in its original packaging.

Return procedure for IRFP048RPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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