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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFP15N60LPBF

Name: IRFP15N60LPBF
Brand: Vishay Siliconix
SKU: IRFP15N60LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP15N60LPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP15N60LPBF.pdf

Description:: MOSFET N-CH 600V 15A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP15N60LPBF from Vishay Siliconix is a 600 V, 15 A N-channel power MOSFET in TO-247 package with R_DS(on) = 0.385 Ω at V_GS = 10 V, Q_g = 100 nC, and enhanced dV/dt capability of 10 V/ns - designed for zero-voltage switching (ZVS) topologies in high-efficiency telecom and server SMPS.

For engineers reviewing the IRFP15N60LPBF datasheet, IRFP15N60LPBF pinout, IRFP15N60LPBF application, or IRFP15N60LPBF equivalent, key selection criteria include avalanche energy rating (E_AS = 320 mJ), superfast body diode recovery (t_rr = 130–200 ns), gate threshold voltage range (3.0–5.0 V), and thermal resistance (R_thJC = 0.44 °C/W).

Technical Context

This MOSFET employs a planar stripe silicon process optimized for high-voltage ZVS operation, featuring a superfast integrated body diode with controlled reverse recovery charge (Q_rr = 450–670 nC at 25 °C) and low C_{oss eff.} (100–120 pF) to minimize switching losses during resonant transitions.

Its elevated V_GS(th) (3.0–5.0 V) improves noise immunity in high-dV/dt environments, while the 10 V/ns peak diode recovery dV/dt rating enables robust operation in hard-switched and quasi-resonant converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus telecom/server PSUs and UPS systems.
R_DS(on) @ V_GS = 10 V	0.385 Ω max - limits conduction loss to ≤5.5 W at 15 A continuous drain current (T_C = 25 °C).
Q_g	100 nC - determines gate drive power requirement and influences turn-on delay (t_d(on) = 20 ns) and rise time (t_r = 44 ns).
E_AS	320 mJ - enables unclamped inductive switching survival in ZVS soft-start and fault conditions without external clamping.
t_rr	130–200 ns (T_J = 25 °C) - ensures fast body diode commutation in LLC and phase-shifted full-bridge topologies.
R_thJC	0.44 °C/W - allows 280 W power dissipation at T_C = 25 °C, supporting high-power density heatsink designs.

Pinout & Package

IRFP15N60LPBF is housed in a through-hole TO-247 package with isolated tab (drain-connected), rated for 280 W maximum power dissipation at T_C = 25 °C and compliant with RoHS* (lead-free termination).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 10 V logic-level drive; threshold voltage 3.0–5.0 V ensures noise margin in noisy power stages.
D	Drain	Main high-voltage power terminal connected to heatsink tab; rated for 600 V blocking and 60 A pulsed current.
S	Source	Power return and reference node for gate drive; forms common source configuration with low-inductance PCB layout critical for dV/dt stability.

Key Features

Feature	Design Value
Superfast body diode	Enables ZVS operation without external diodes by achieving t_rr ≤ 200 ns and Q_rr ≤ 670 nC at 25 °C.
Enhanced dV/dt ruggedness	Rated for 10 V/ns peak diode recovery dV/dt - suppresses false turn-on in high-slew-rate resonant converters.
Elevated gate threshold	V_GS(th) = 3.0–5.0 V reduces susceptibility to gate oscillation and spurious conduction in EMI-heavy environments.
Low gate charge	Q_g = 100 nC simplifies gate driver selection and lowers drive power loss in high-frequency (>100 kHz) SMPS designs.

Applications

Telecom Power Supply	Server SMPS
Use Scenario: Primary-side switch in 48 V input, 380 V DC bus telecom rectifiers operating at 100–300 kHz with ZVS control. IC Role / Device Role / Timing Role: High-voltage power switch managing energy transfer via resonant tank; body diode conducts during dead-time commutation. Use Value: Superfast body diode (t_rr = 130 ns) minimizes reverse recovery loss, improving efficiency by ≥0.8% over standard 600 V MOSFETs.	Use Scenario: Half-bridge primary switch in 277 V AC-input server PSUs with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Main switching element handling 15 A RMS current; avalanche-rated for safe unclamped inductive turn-off. Use Value: 320 mJ single-pulse avalanche energy (E_AS) eliminates need for external RCD snubbers in transient overload conditions.
UPS Inverter Stage	Industrial Motor Drive
Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 V AC with <1% THD. IC Role / Device Role / Timing Role: High-side/low-side switching device in 16 kHz PWM inverter leg; body diode freewheels motor back-EMF. Use Value: 10 V/ns dV/dt rating prevents parasitic turn-on during fast bus transients, ensuring reliable commutation under load dump.	Use Scenario: Inverter leg switch in 3 kW HVAC compressor drive using space-vector modulation at 8–12 kHz. IC Role / Device Role / Timing Role: Medium-power switching transistor controlling IGBT/MOSFET gate drivers and motor phase current. Use Value: R_DS(on) = 0.385 Ω at 10 V gate drive reduces conduction loss to 5.5 W, enabling compact heatsink design at 95 °C case temperature.

Telecom Power Supply

Server SMPS

Use Scenario: Primary-side switch in 48 V input, 380 V DC bus telecom rectifiers operating at 100–300 kHz with ZVS control.

IC Role / Device Role / Timing Role: High-voltage power switch managing energy transfer via resonant tank; body diode conducts during dead-time commutation.

Use Value: Superfast body diode (t_rr = 130 ns) minimizes reverse recovery loss, improving efficiency by ≥0.8% over standard 600 V MOSFETs.

Use Scenario: Half-bridge primary switch in 277 V AC-input server PSUs with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Main switching element handling 15 A RMS current; avalanche-rated for safe unclamped inductive turn-off.

Use Value: 320 mJ single-pulse avalanche energy (E_AS) eliminates need for external RCD snubbers in transient overload conditions.

UPS Inverter Stage

Industrial Motor Drive

Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 V AC with <1% THD.

IC Role / Device Role / Timing Role: High-side/low-side switching device in 16 kHz PWM inverter leg; body diode freewheels motor back-EMF.

Use Value: 10 V/ns dV/dt rating prevents parasitic turn-on during fast bus transients, ensuring reliable commutation under load dump.

Use Scenario: Inverter leg switch in 3 kW HVAC compressor drive using space-vector modulation at 8–12 kHz.

IC Role / Device Role / Timing Role: Medium-power switching transistor controlling IGBT/MOSFET gate drivers and motor phase current.

Use Value: R_DS(on) = 0.385 Ω at 10 V gate drive reduces conduction loss to 5.5 W, enabling compact heatsink design at 95 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15NK60Z	R_DS(on) = 0.38 Ω, Q_g = 95 nC, but t_rr = 250 ns and E_AS = 220 mJ - lower diode speed and avalanche margin.	Less suitable for ZVS due to slower body diode; requires external diode in resonant topologies.	Prefer IRFP15N60LPBF where ZVS efficiency or unclamped inductive stress is critical.
IXFH15N60P	R_DS(on) = 0.40 Ω, Q_g = 105 nC, t_rr = 140 ns, E_AS = 300 mJ - slightly higher R_DS(on) and lower avalanche energy.	Acceptable in hard-switched PFC stages but marginal in high-stress LLC secondary-side synchronous rectification.	IRFP15N60LPBF offers superior thermal resistance (R_thJC = 0.44 vs. 0.50 °C/W) for thermally constrained layouts.

Compared with STW15NK60Z and IXFH15N60P, IRFP15N60LPBF delivers the highest combination of body diode speed (t_rr ≤ 200 ns), avalanche robustness (E_AS = 320 mJ), and thermal performance (R_thJC = 0.44 °C/W), making it optimal for ZVS-critical telecom and server power stages.

Availability

IRFP15N60LPBF is available at Aetrix Electronics and suitable for telecom rectifiers, server SMPS, and UPS inverters requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFP15N60LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFP15N60LPBF belongs to Vishay's "L" series of high-voltage power MOSFETs engineered specifically for zero-voltage switching and high-ruggedness resonant converter topologies in infrastructure power systems.

FAQ

What is the maximum continuous drain current for IRFP15N60LPBF at 100 °C case temperature?

The IRFP15N60LPBF supports 9.7 A continuous drain current at T_C = 100 °C, derated from 15 A at 25 °C using a linear derating factor of 2.3 W/°C. This value reflects thermal limitations of the TO-247 package and must be validated against actual heatsink performance and ambient conditions in the final IRFP15N60LPBF application layout.

Does IRFP15N60LPBF have a built-in body diode, and what are its key recovery characteristics?

Yes, IRFP15N60LPBF integrates a superfast body diode with t_rr = 130–200 ns (25 °C) and Q_rr = 450–670 nC, enabling ZVS operation without external diodes. Its peak dV/dt rating of 10 V/ns ensures stable commutation in high-slew-rate resonant converters - a defining feature confirmed in the Vishay datasheet Figure 12a and Section "Drain-Source Body Diode Characteristics".

Is IRFP15N60LPBF RoHS-compliant, and what does the "PbF" suffix indicate?

Yes, IRFP15N60LPBF is RoHS-compliant with lead-free terminations, as indicated by the "PbF" suffix per Vishay ordering information. The part uses SnAgCu solder finish and meets exemption 7a for high-melting-temperature solders. Pb-containing variants (e.g., IRFP15N60L) are not RoHS-compliant and are explicitly excluded from this designation.

What is the gate threshold voltage range for IRFP15N60LPBF, and why is it important for noise immunity?

The IRFP15N60LPBF has a gate threshold voltage range of 3.0–5.0 V at I_D = 250 µA, which is higher than standard MOSFETs (~2–4 V). This elevated V_GS(th) increases noise immunity in high-dV/dt power stages by reducing susceptibility to false turn-on from coupling transients - a key specification verified in the "Static" section of the Vishay datasheet.

Can IRFP15N60LPBF be used in avalanche mode, and what is its rated single-pulse energy?

Yes, IRFP15N60LPBF is fully rated for repetitive and single-pulse avalanche operation, with E_AS = 320 mJ (single pulse) and I_AR = 15 A (repetitive), per Absolute Maximum Ratings and Fig. 14a. This capability allows safe operation during unclamped inductive switching events in ZVS soft-start and fault conditions without external protection circuitry in the IRFP15N60LPBF design.

IRFP15N60LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 460mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2720 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 280W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP15N60LPBF FAQ

1.How can I place an order for IRFP15N60LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP15N60LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP15N60LPBF reliable?

The price and inventory of IRFP15N60LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP15N60LPBF is usually 5 days.

3.What payment methods are accepted for IRFP15N60LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP15N60LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP15N60LPBF?

IRFP15N60LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP15N60LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP15N60LPBF?

For technical support, including IRFP15N60LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP15N60LPBF requirements.

6.How does Aetrix verify that IRFP15N60LPBF is sourced from the original manufacturer or authorized distributors?

All IRFP15N60LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP15N60LPBF meets industry standards.

7.What is the process for return or replacement of IRFP15N60LPBF?

All IRFP15N60LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP15N60LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP15N60LPBF part is unused and in its original packaging.

Return procedure for IRFP15N60LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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