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Vishay Siliconix IRFP254NPBF
- Part No.:
- IRFP254NPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFP254NPBF.pdf
- Description:
- MOSFET N-CH 250V 23A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,854
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Product details
Overview
IRFP254NPBF from Vishay Siliconix is a 250 V, 23 A, N-channel enhancement-mode Power MOSFET in TO-247 package, featuring 0.125 Ω RDS(on) at VGS = 10 V, 100 nC total gate charge, and 175 °C maximum junction temperature - designed for high-efficiency switching in DC-DC converters, motor drives, and UPS systems.
For engineers reviewing the IRFP254NPBF datasheet, IRFP254NPBF pinout, IRFP254NPBF application, or IRFP254NPBF equivalent, key selection criteria include avalanche ruggedness (300 mJ single-pulse EAS), fast switching (14 ns turn-on delay), dynamic dV/dt rating (7.4 V/ns), thermal resistance (0.68 °C/W RthJC), and RoHS-compliant lead-free construction.
Technical Context
This fifth-generation Power MOSFET uses advanced silicon processing to achieve low on-resistance per die area while maintaining robust avalanche capability and high-temperature operation up to 175 °C. Its TO-247 package provides superior thermal performance over TO-220, with isolated mounting hole and low RthJC of 0.68 °C/W.
The device integrates a fast-recovery body diode (trr = 210–310 ns, Qrr = 1.7–2.6 nC) and supports high dI/dt (≤ 460 A/µs) in inductive switching. Gate drive is simplified by low threshold voltage (2.0–4.0 V) and moderate gate charge (Qg = 100 nC, Qgd = 44 nC).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports 200 V bus designs with 25 % voltage margin for transients |
| RDS(on) | 0.125 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 14 A continuous current |
| Qg | 100 nC - determines gate driver power requirement and switching speed trade-off |
| EAS | 300 mJ - allows unclamped inductive switching without external snubbers in flyback or motor phase control |
| tr/tf | 34 ns / 29 ns - enables >500 kHz hard-switching in resonant or PWM topologies |
| TJ(max) | 175 °C - permits operation in sealed enclosures or high-ambient industrial environments |
| RthJC | 0.68 °C/W - delivers 220 W power dissipation capability with minimal heatsink interface resistance |
Pinout & Package
IRFP254NPBF is housed in a through-hole TO-247 package with isolated mounting hole and standard three-terminal layout: Drain (D) connected to tab, Source (S) and Gate (G) on leads. Thermal path optimized via direct die-to-case conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current output terminal, electrically connected to metal tab | Primary heat transfer surface; must be mounted to heatsink with thermal compound and insulated if floating |
| Source | Reference node for gate drive and current return path | Low-inductance connection critical for stable switching; internal source inductance LS = 13 nH affects di/dt limiting |
| Gate | Control electrode for channel modulation | High-impedance input requiring <100 nA leakage; driven with 10 V for full enhancement; RG = 25 Ω typical for EMI-controlled switching |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 300 mJ single-pulse EAS and 22 mJ repetitive EAR enable reliable operation under inductive fault conditions without derating |
| Dynamic dV/dt immunity | 7.4 V/ns rated dV/dt prevents false turn-on during high-speed switching in noisy power stages |
| Fast body diode recovery | 210–310 ns trr and low Qrr (1.7–2.6 nC) reduce switching losses and ringing in synchronous rectification or freewheeling paths |
| Lead (Pb)-free RoHS compliance | IRFP254NPBF variant meets EU RoHS Directive 2011/65/EU with SnAgCu termination and 300 °C soldering peak tolerance |
| High-temperature operation | Rated for continuous operation from –55 °C to +175 °C junction temperature, supporting automotive under-hood and industrial motor control |
Applications
| Motor Drive Inverter Stage | Uninterruptible Power Supply (UPS) Output Stage |
|---|---|
|
Use Scenario: High-current half-bridge switching in 3-phase BLDC or AC induction motor inverters operating at 10–20 kHz PWM frequency. IC Role / Device Role / Timing Role: Main power switch handling 23 A continuous phase current; synchronized with complementary gate drive and current sensing. Use Value: Low RDS(on) minimizes I²R losses during conduction; rugged avalanche rating absorbs regenerative energy during abrupt load stops. |
Use Scenario: Bidirectional DC-AC inversion in online double-conversion UPS systems delivering clean 230 VAC output under utility failure. IC Role / Device Role / Timing Role: High-side and low-side switching element in full-bridge topology; switched at 16–20 kHz with zero-voltage switching assist. Use Value: Fast tr/tf and low Qgd enable precise dead-time control; TO-247 thermal mass sustains 220 W dissipation during overload events. |
| Industrial DC-DC Converter Primary Switch | High-Voltage Battery Protection Circuit |
|
Use Scenario: Primary-side switch in 48 V–400 V isolated DC-DC converters for factory automation and telecom power systems. IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward or active-clamp forward topology; driven with 10 V gate voltage and 3.6 Ω series resistor. Use Value: 250 V VDS accommodates reflected flyback spikes; 100 nC Qg balances driver loss vs. switching loss at 100–300 kHz. |
Use Scenario: Solid-state main disconnect switch in 48–100 V lithium-ion battery packs used in material handling equipment. IC Role / Device Role / Timing Role: High-side load switch controlled by protection IC; subjected to repeated short-circuit and overcurrent events. Use Value: Fully rated avalanche capability (EAS = 300 mJ) withstands repeated fault clearing without degradation; 175 °C TJ ensures reliability during thermal stress testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP24N25 | 250 V, 24 A, RDS(on) = 0.13 Ω, Qg = 95 nC, TO-220 package | Lower thermal capability (RthJC = 1.2 °C/W); unsuitable for >100 W continuous dissipation | Acceptable for lower-power motor drives or space-constrained PCBs where heatsinking is limited |
| IXTH24N25L2 | 250 V, 24 A, RDS(on) = 0.11 Ω, Qg = 110 nC, TO-247 package, logic-level (2.5 V VGS(th)) | Lower gate threshold enables 5 V microcontroller drive but increases risk of spurious turn-on in noisy environments | Preferred when direct MCU GPIO drive is required; requires tighter gate noise filtering than IRFP254NPBF |
Compared with STP24N25 and IXTH24N25L2, IRFP254NPBF offers superior thermal performance (0.68 °C/W vs. 1.2 °C/W), higher dV/dt immunity (7.4 V/ns), and proven ruggedness in high-energy avalanche events - making it optimal for industrial-grade power conversion where reliability under transient stress is critical.
Availability
IRFP254NPBF is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies, industrial DC-DC converters, and high-voltage battery protection circuits requiring stable component supply and long-term lifecycle support.
Supply support for IRFP254NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFP254NPBF belongs to Vishay's fifth-generation Power MOSFET family, engineered for high-efficiency, high-ruggedness switching in demanding power conversion applications where thermal stability and transient immunity are essential.
FAQ
What is the maximum continuous drain current for IRFP254NPBF at 100 °C case temperature?
The IRFP254NPBF supports 16 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating from 23 A at 25 °C reflects thermal limits of the TO-247 package and ensures safe operation within the 175 °C maximum junction temperature. Designers must verify heatsink design using RthJC = 0.68 °C/W and ambient conditions to maintain this rating in actual use.
Does IRFP254NPBF have a built-in body diode, and what are its key recovery characteristics?
Yes, IRFP254NPBF integrates a monolithic body diode with trr = 210–310 ns and Qrr = 1.7–2.6 nC at TJ = 25 °C, IF = 14 A, and dI/dt = 100 A/µs. These values indicate fast, low-loss reverse recovery suitable for freewheeling and synchronous rectification. The diode's VSD = 1.3 V at 14 A confirms low forward drop, reducing conduction loss during bidirectional current flow.
Is IRFP254NPBF suitable for avalanche operation, and what is its single-pulse energy rating?
Yes, IRFP254NPBF is fully avalanche rated with a single-pulse avalanche energy (EAS) of 300 mJ under test conditions of L = 3.1 mH, IAS = 14 A, VGS = 10 V, and starting TJ = 25 °C. This rating is validated per JEDEC standards and enables reliable operation in inductive switching applications without external clamping, provided pulse width and duty cycle remain within datasheet limits.
What is the gate threshold voltage range for IRFP254NPBF, and how does it affect drive requirements?
The IRFP254NPBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 µA. This standard-level threshold requires ≥10 V gate drive for full enhancement and low RDS(on). Unlike logic-level MOSFETs, it avoids spurious turn-on in noisy environments but mandates a dedicated gate driver or level-shifting circuit when controlled by 3.3 V or 5 V microcontrollers.
How does the TO-247 package of IRFP254NPBF improve thermal performance compared to TO-220?
The TO-247 package of IRFP254NPBF achieves RthJC = 0.68 °C/W - nearly half that of typical TO-220 devices (~1.2 °C/W) - due to larger copper tab area, improved die attach, and isolated mounting hole enabling direct heatsink contact without electrical isolation washers. This allows IRFP254NPBF to dissipate 220 W continuously at TC = 25 °C, supporting higher power density in industrial power stages.
IRFP254NPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 125mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2040 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 220W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFP254NPBF FAQ
1.How can I place an order for IRFP254NPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFP254NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFP254NPBF reliable?
The price and inventory of IRFP254NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP254NPBF is usually 5 days.
3.What payment methods are accepted for IRFP254NPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP254NPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFP254NPBF?
IRFP254NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFP254NPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFP254NPBF?
For technical support, including IRFP254NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP254NPBF requirements.
6.How does Aetrix verify that IRFP254NPBF is sourced from the original manufacturer or authorized distributors?
All IRFP254NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP254NPBF meets industry standards.
7.What is the process for return or replacement of IRFP254NPBF?
All IRFP254NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP254NPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFP254NPBF part is unused and in its original packaging.
Return procedure for IRFP254NPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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