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Vishay Siliconix IRFP260PBF
- Part No.:
- IRFP260PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFP260PBF.pdf
- Description:
- MOSFET N-CH 200V 46A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:292
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Product details
Overview
IRFP260PBF from Vishay Siliconix is a 200 V, 46 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.055 Ω RDS(on) at VGS = 10 V, 230 nC total gate charge, and repetitive avalanche rating-designed for high-power switching in industrial motor drives, DC-DC converters, and UPS systems.
For engineers reviewing the IRFP260PBF datasheet, IRFP260PBF pinout, IRFP260PBF application, or IRFP260PBF equivalent, key selection criteria include its isolated mounting hole for thermal management, 5.0 V/ns peak diode recovery dV/dt capability, and compatibility with paralleling configurations in high-current power stages.
Technical Context
This third-generation silicon power MOSFET uses planar vertical DMOS architecture optimized for ruggedness and fast switching. Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive, while low Qgd/Qg ratio (110/230 nC) supports efficient hard-switching operation up to 100 kHz in non-isolated topologies.
The device integrates a fast-recovery body diode (trr = 390–590 ns, Qrr = 4.8–7.2 μC) and is rated for unclamped inductive switching with 1000 mJ single-pulse avalanche energy. Thermal resistance RthJC = 0.45 °C/W ensures effective junction-to-case heat transfer under forced-air or heatsink-cooled conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Supports bus voltages up to 160 V DC in industrial SMPS and motor control inverters |
| RDS(on) | 0.055 Ω @ VGS = 10 V - Enables ≤2.5 W conduction loss at 46 A continuous drain current |
| Qg | 230 nC - Requires ≥2.3 A peak gate drive for 100 ns turn-on with 10 Ω resistor |
| ID (TC = 100 °C) | 29 A - Sustains full-load operation in ambient temperatures up to 85 °C with adequate heatsinking |
| EAS | 1000 mJ - Withstands single-energy transients in relay-driving or inductive load switching |
| trr | 390–590 ns - Limits reverse recovery losses during synchronous rectification or freewheeling |
| dV/dt (diode) | 5.0 V/ns - Resists false triggering during high-slew-rate commutation in bridge circuits |
Pinout & Package
IRFP260PBF is housed in a TO-247AC package with isolated central mounting hole, 0.45 °C/W junction-to-case thermal resistance, and creepage distance compliant with industrial safety standards. The plastic body measures 20.55 mm × 15.70 mm × 15.15 mm (L×W×H), with drain-connected tab for direct heatsink attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level drive; 42 nC gate-source charge enables predictable Miller plateau timing |
| 2 (Drain) | Main current path input | Connected to high-side switch node or DC bus; tab is electrically tied to drain for low-inductance thermal path |
| 3 (Source) | Main current path return | Serves as power ground reference; internal source inductance (13 nH) affects high-frequency shoot-through risk |
| 4 (Drain) | Secondary drain connection | Redundant drain terminal for parallel mounting or enhanced current sharing; shares same potential as Pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 46 A IAR, 28 mJ EAR - Enables reliable operation under short-circuit or overload without external snubbers |
| Dynamic dV/dt rating | 5.0 V/ns - Prevents spurious turn-on during fast voltage transitions in half-bridge configurations |
| Isolated central mounting hole | 3.61 mm diameter, 1.5° draft angle - Allows mechanical grounding independent of electrical drain potential for EMI reduction |
| Fast switching | td(on) = 23 ns, tr = 120 ns - Supports >50 kHz PWM in phase-shifted full-bridge converters |
| Ease of paralleling | Low RDS(on) tempco (+0.24 V/°C VDS drift) and matched threshold voltage - Minimizes current imbalance across multiple devices |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: Three-phase inverter stage driving 5–10 kW AC induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/MOSFET hybrid or all-MOSFET inverter legs. Use Value: 200 V rating accommodates 400 V DC bus with margin; 0.055 Ω RDS(on) reduces conduction loss by 35% vs. legacy 2N60 devices. |
Use Scenario: Bidirectional DC-AC inverter and battery charger stage in line-interactive UPS units. IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch in resonant LLC topology. Use Value: Body diode trr ≤ 590 ns and Qrr ≤ 7.2 μC minimize dead-time losses and EMI during zero-voltage switching transitions. |
| High-Voltage DC-DC Converters | Welding Power Supplies |
|
Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers converting 380–400 V DC to 12–48 V output. IC Role / Device Role / Timing Role: Hard-switched primary FET in forward or push-pull topology operating at 50–100 kHz. Use Value: 1000 mJ EAS withstands transformer leakage inductance spikes without clamping circuitry. |
Use Scenario: Output stage switch in inverter-based arc welding equipment delivering 200–400 A DC output. IC Role / Device Role / Timing Role: Pulse-width modulated main power switch controlling duty cycle and current ramp rate. Use Value: 180 A pulsed drain current (IDM) supports 300% overload peaks during arc ignition without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60FD | 600 V VDS, 0.22 Ω RDS(on), 40 nC Qg, TO-220FP package | Higher voltage rating but higher on-resistance and lower current capability (20 A) | Preferred where 600 V isolation is required and space-constrained PCB layout favors smaller footprint |
| IXFH32N60P | 600 V VDS, 0.18 Ω RDS(on), 120 nC Qg, TO-247 package | Higher voltage, lower gate charge, but no repetitive avalanche rating and higher RDS(on) | Selected when faster switching and reduced gate drive loss outweigh need for avalanche ruggedness |
Compared with STP20NM60FD and IXFH32N60P, IRFP260PBF offers superior current density (46 A vs. ≤32 A), proven repetitive avalanche capability, and TO-247AC's isolated mounting for improved thermal reliability-making it optimal for 200 V industrial power stages demanding robustness over ultra-high voltage margin.
Availability
IRFP260PBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.
Supply support for IRFP260PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRFP260PBF belongs to Vishay's third-generation Power MOSFET family engineered for ruggedized switching performance, low on-resistance, and cost-effective implementation in high-power commercial-industrial systems.
FAQ
What is the maximum continuous drain current for IRFP260PBF at 100 °C case temperature?
The IRFP260PBF supports 29 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and must be validated with actual heatsink design and airflow conditions. The IRFP260PBF maintains safe operation only when junction temperature remains below 150 °C under sustained load.
Does IRFP260PBF have a built-in body diode, and what are its key recovery characteristics?
Yes, the IRFP260PBF integrates a monolithic body diode with typical reverse recovery time (trr) of 390–590 ns and reverse recovery charge (Qrr) of 4.8–7.2 μC at TJ = 25 °C, IF = 46 A, and dI/dt = 100 A/μs. These values directly impact efficiency in synchronous rectification and freewheeling paths. The IRFP260PBF body diode is not optimized for ultrafast recovery but provides balanced trade-offs for general-purpose power switching.
Can IRFP260PBF be used in parallel configurations, and what design considerations apply?
Yes, the IRFP260PBF is designed for ease of paralleling due to positive RDS(on) temperature coefficient and tight VGS(th) distribution (2.0–4.0 V). To ensure current sharing, use matched gate resistors, symmetrical PCB layout, and common-source Kelvin connections. The IRFP260PBF's low Qgd/Qg ratio also minimizes dynamic imbalance during switching transitions.
What is the gate-source voltage limit for IRFP260PBF, and why is it critical?
The IRFP260PBF has a ±20 V absolute maximum gate-source voltage rating. Exceeding this risks irreversible oxide breakdown in the gate dielectric. For reliable operation, drive voltage should be limited to +10 V to +15 V for full enhancement and –5 V to –10 V for fast turn-off. The IRFP260PBF's gate oxide integrity is validated only within this range per Vishay's qualification testing.
How does the isolated mounting hole in the TO-247AC package benefit thermal and electrical design?
The isolated central mounting hole in the IRFP260PBF's TO-247AC package allows mechanical attachment to a heatsink without creating an electrical short to the drain-connected tab. This enables grounded heatsink designs that reduce EMI and simplify safety isolation-critical in medical and industrial equipment. The IRFP260PBF's thermal pad contour (optional D1/E1 dimensions) further enhances contact uniformity under torque-controlled mounting.
IRFP260PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 230 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 280W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFP260PBF FAQ
1.How can I place an order for IRFP260PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFP260PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFP260PBF reliable?
The price and inventory of IRFP260PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP260PBF is usually 5 days.
3.What payment methods are accepted for IRFP260PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP260PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFP260PBF?
IRFP260PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFP260PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFP260PBF?
For technical support, including IRFP260PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP260PBF requirements.
6.How does Aetrix verify that IRFP260PBF is sourced from the original manufacturer or authorized distributors?
All IRFP260PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP260PBF meets industry standards.
7.What is the process for return or replacement of IRFP260PBF?
All IRFP260PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP260PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFP260PBF part is unused and in its original packaging.
Return procedure for IRFP260PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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