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Vishay Siliconix IRFP264NPBF
- Part No.:
- IRFP264NPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFP264NPBF.pdf
- Description:
- MOSFET N-CH 250V 44A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,709
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Product details
Overview
IRFP264NPBF from Vishay Siliconix is a 250 V, 44 A, N-channel enhancement-mode power MOSFET in TO-247 package, featuring 0.060 Ω RDS(on) at VGS = 10 V, 210 nC total gate charge, and 175 °C maximum junction temperature - designed for high-current DC-DC converters, motor drives, and UPS inverters.
For engineers reviewing the IRFP264NPBF datasheet, IRFP264NPBF pinout, IRFP264NPBF application, or IRFP264NPBF equivalent, key selection criteria include avalanche ruggedness (520 mJ single-pulse EAS), dV/dt immunity (8.7 V/ns), body diode recovery (270–400 ns trr), thermal resistance (0.39 °C/W RthJC), and RoHS-compliant lead-free construction.
Technical Context
This fifth-generation Power MOSFET uses advanced silicon processing to achieve low on-resistance per die area while maintaining fast switching (17 ns td(on), 62 ns tr) and robust unclamped inductive switching capability. Its fully rated avalanche performance supports reliable operation under transient overloads without external snubbers.
The device integrates a co-packaged body diode with 1.3 V forward drop at 25 A and controlled reverse recovery (Qrr = 2.7–4.1 µC), enabling use in synchronous rectification and freewheeling paths where diode commutation stress must be managed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports 200 V DC bus designs with 25 % voltage margin for transients |
| RDS(on) | 0.060 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 25 A continuous current |
| Qg | 210 nC - determines gate drive power requirement and switching speed trade-off |
| EAS | 520 mJ - allows safe energy absorption during unclamped inductive turn-off events |
| RthJC | 0.39 °C/W - enables 380 W power dissipation with ≤150 °C case-to-ambient delta |
| trr | 270–400 ns - defines minimum dead-time needed to prevent shoot-through in half-bridge topologies |
| dV/dt rating | 8.7 V/ns - ensures immunity to parasitic turn-on in high-dI/dt environments |
Pinout & Package
IRFP264NPBF is housed in a TO-247AC package with isolated mounting hole, optimized for high-power thermal management and mechanical stability on heatsinks. The three terminals are arranged linearly: Gate (left), Drain (center), Source (right) when viewed with leads facing downward and tab up.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current output terminal | Connected directly to MOSFET die backside; electrically tied to metal tab for low-inductance heat path |
| Gate (G) | Control input | High-impedance CMOS-compatible node requiring ~210 nC charge for full enhancement |
| Source (S) | Reference and return path | Common reference for gate drive and load current; internal bond wires contribute 13 nH source inductance |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 520 mJ single-pulse EAS eliminates need for external clamping circuits in inductive switching |
| Dynamic dV/dt immunity | 8.7 V/ns rating prevents false turn-on during fast voltage transients across drain-source |
| 175 °C operating temperature | Enables operation in sealed enclosures or high-ambient industrial environments without derating |
| Low Qgd/Qg ratio | 94/210 ≈ 45 % - improves Miller immunity and reduces risk of oscillation during switching |
| RoHS-compliant lead-free | IRFP264NPBF meets EU RoHS Directive 2011/65/EU with SnAgCu termination and halogen-free molding compound |
Applications
| Motor Drive Inverter | Uninterruptible Power Supply (UPS) |
|---|---|
|
Use Scenario: Three-phase 200 V AC output stage using six IRFP264NPBF devices in IGBT-like half-bridge configuration with 16 kHz PWM. IC Role / Device Role / Timing Role: High-side and low-side power switch handling 30 A RMS motor phase current with bidirectional body diode conduction during regeneration. Use Value: 0.060 Ω RDS(on) limits conduction loss to <0.9 W per device; 520 mJ EAS withstands motor inductance flyback without failure. |
Use Scenario: Online double-conversion UPS delivering 3 kVA with battery-backed DC link and transformer-isolated output stage. IC Role / Device Role / Timing Role: Primary-side switching element in full-bridge inverter converting 380 V DC bus to 230 V AC output at 50 Hz fundamental with high-frequency PWM carrier. Use Value: 250 V VDS provides 90 % margin over 380 V bus; 175 °C TJ(max) sustains reliability under sustained overload conditions. |
| Industrial DC-DC Converter | Welding Power Supply |
|
Use Scenario: Isolated 48 V to 12 V, 100 A step-down converter using phase-shifted full-bridge topology with synchronous rectification. IC Role / Device Role / Timing Role: Primary-side switch managing 5 kW peak power with ZVS-assisted soft switching and body diode reverse recovery management. Use Value: 210 nC Qg enables efficient gate drive at 100–200 kHz; 270–400 ns trr allows precise dead-time control to minimize circulating current. |
Use Scenario: Constant-current arc welding supply delivering 300 A DC output with rapid current ramp-up and short-circuit protection. IC Role / Device Role / Timing Role: Main power switch in chopper-based output stage, repeatedly subjected to 170 A pulsed drain current and unclamped inductive turn-off. Use Value: 170 A IDM and 520 mJ EAS ensure survival during repeated short-circuit events; TO-247 package handles >300 W transient dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP24N50F3 | 500 V VDS, 0.185 Ω RDS(on), 60 nC Qg, TO-220 package | Higher voltage rating but higher on-resistance and lower current capability (24 A ID) | Preferred where 500 V isolation margin is required and thermal budget allows higher conduction loss |
| IXTH30N25 | 250 V VDS, 0.075 Ω RDS(on), 140 nC Qg, TO-247 package, 150 °C TJ(max) | Lower gate charge and faster switching, but reduced avalanche rating (250 mJ EAS) and junction temperature limit | Selected when switching efficiency dominates over ruggedness, and ambient temperature remains below 85 °C |
Compared with STP24N50F3 and IXTH30N25, the IRFP264NPBF delivers superior avalanche ruggedness and thermal headroom at the cost of higher gate drive demand - making it optimal for industrial motor drives and UPS systems where reliability under fault conditions is critical.
Availability
IRFP264NPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and high-current DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for IRFP264NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFP264NPBF belongs to Vishay's fifth-generation Power MOSFET family, engineered for high-efficiency, high-ruggedness switching in demanding power conversion systems where thermal stability and transient survivability are paramount.
FAQ
What is the maximum continuous drain current for IRFP264NPBF at 100 °C case temperature?
The IRFP264NPBF supports 31 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247 package and silicon die; operation above this current requires active cooling or pulse-width limitation to maintain TJ ≤ 175 °C. The IRFP264NPBF datasheet confirms this value under standard test conditions with proper heatsinking.
Does IRFP264NPBF have a built-in body diode, and what are its key parameters?
Yes, the IRFP264NPBF integrates a monolithic body diode with 1.3 V forward voltage at 25 A and 25 °C, 270–400 ns reverse recovery time (trr), and 2.7–4.1 µC reverse recovery charge (Qrr). These values are measured under standardized conditions (TJ = 25 °C, IF = 25 A, dI/dt = 100 A/µs) and define safe commutation behavior in bridge topologies. The IRFP264NPBF body diode is not optimized for ultrafast recovery but provides robust freewheeling capability.
Is IRFP264NPBF pin-compatible with the legacy IRFP264N (SnPb version)?
Yes, the IRFP264NPBF is a direct lead-free replacement for the SnPb-version IRFP264N, sharing identical TO-247AC package dimensions, pinout (G-D-S), and electrical specifications. The only difference is the termination material: IRFP264NPBF uses matte tin plating compliant with RoHS Directive 2011/65/EU, while IRFP264N uses SnPb. All thermal, switching, and DC parameters remain unchanged in the IRFP264NPBF datasheet.
What is the gate threshold voltage range for IRFP264NPBF, and how does it affect drive design?
The IRFP264NPBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, measured at ID = 250 µA. This wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process variation and temperature extremes. Driving the IRFP264NPBF with only 5 V risks incomplete turn-on and excessive RDS(on); the IRFP264NPBF is not a logic-level device.
Can IRFP264NPBF be paralleled for higher current capacity, and what design considerations apply?
Yes, the IRFP264NPBF is explicitly designed for ease of paralleling, as noted in its features list. Key requirements include matched gate resistors (≤5 % tolerance), symmetrical PCB layout to minimize loop inductance, and individual gate drive routing to avoid common-source inductance coupling. Thermal coupling via shared heatsink is recommended to ensure current sharing stability. The IRFP264NPBF's positive RDS(on) temperature coefficient inherently promotes current balancing across paralleled units.
IRFP264NPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 210 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 380W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFP264NPBF FAQ
1.How can I place an order for IRFP264NPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFP264NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFP264NPBF reliable?
The price and inventory of IRFP264NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP264NPBF is usually 5 days.
3.What payment methods are accepted for IRFP264NPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP264NPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFP264NPBF?
IRFP264NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFP264NPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFP264NPBF?
For technical support, including IRFP264NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP264NPBF requirements.
6.How does Aetrix verify that IRFP264NPBF is sourced from the original manufacturer or authorized distributors?
All IRFP264NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP264NPBF meets industry standards.
7.What is the process for return or replacement of IRFP264NPBF?
All IRFP264NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP264NPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFP264NPBF part is unused and in its original packaging.
Return procedure for IRFP264NPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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