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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP3703PBF

Name: IRFP3703PBF
Brand: Infineon Technologies
SKU: IRFP3703PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP3703PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP3703PBF.pdf

Description:: MOSFET N-CH 30V 210A TO247AC

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Product details

Overview

IRFP3703PBF from Infineon Technologies is a 30V N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 210A continuous drain current at 25°C, 2.8mΩ max R_DS(on), and fully avalanche-rated for robustness in high-current switching. It serves as a primary synchronous rectifier or active ORing switch in telecom and industrial SMPS.

For engineers reviewing the IRFP3703PBF datasheet, IRFP3703PBF pinout, IRFP3703PBF application, or IRFP3703PBF equivalent, key selection criteria include its ultra-low on-resistance, 175°C junction rating, gate charge (209nC), diode recovery dv/dt (5.0V/ns), and thermal resistance (R_θJC = 0.65°C/W).

Technical Context

This HEXFET® power MOSFET uses planar stripe cell structure to achieve low R_DS(on) while maintaining rugged unclamped inductive switching capability (E_AS = 1700mJ). Its gate threshold voltage (2.0–4.0V) and transconductance (150S) support stable drive with standard 10V logic-level gate drivers.

Dynamic performance is optimized for high-frequency hard-switched topologies: total gate charge is 209nC, Q_gd/Q_gs ratio is ~0.68, and C_oss,eff is 2590pF - enabling efficient operation in forward and bridge converters above 100kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	30V - Withstands up to 30V drain-source blocking voltage before avalanche conduction begins.
RDS(on) max	2.8mΩ @ VGS=10V, ID=76A - Enables <1.5W conduction loss at 100A, critical for high-efficiency synchronous rectification.
ID cont @ TC=25°C	210A - Continuous current rating limited by package thermal capacity, not silicon die alone.
Qg total	209nC - Determines gate driver power requirement and switching speed trade-off in hard-switched applications.
RθJC	0.65°C/W - Junction-to-case thermal resistance enables direct heatsink mounting with predictable temperature rise under 230W dissipation.
dv/dt peak	5.0V/ns - Maximum allowable rate of voltage rise across drain-source during body diode recovery without false turn-on.
EAS	1700mJ - Single-pulse avalanche energy rating ensures survivability during transient overvoltage events in unclamped inductive loads.

Pinout & Package

TO-247AC package: isolated tab (Drain), three leads - Gate (pin 1), Drain (pin 2, tab-connected), Source (pin 3). Mounting torque: 10 lbf·in (1.1N·m); soldering temperature limit: 300°C for 10s at 1.6mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control input	Receives gate drive signal; requires ≥10V for full enhancement; gate leakage <200nA at ±20V.
Drain (Pin 2 + Tab)	High-side power terminal	Electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential.
Source (Pin 3)	Reference node / return path	Serves as common reference for gate drive and load current return; carries full ID and IS currents.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.3mΩ typical at 10V - reduces conduction losses by >30% vs. legacy 30V MOSFETs in 48V telecom rectifiers.
175°C maximum junction temperature	Enables operation in sealed industrial enclosures without derating at ambient up to 85°C with proper heatsinking.
Full avalanche rating	1700mJ single-pulse EAS - eliminates need for external snubbers in flyback or forward converter output stages.
Low Q_gd/Q_g ratio	20% - improves Miller immunity and enables faster, more predictable turn-off in high-dv/dt environments.
Optimized body diode	trr = 80–120ns, Q_rr = 185–275nC - minimizes reverse recovery loss in synchronous rectification when paired with fast controller.

Applications

Telecom DC/DC Rectification

Industrial Motor Drive Inverter Stage

Use Scenario: 48V input, 12V/200A output synchronous buck converter in telecom shelf power supply.

IC Role / Device Role / Timing Role: Primary low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency >95%.

Use Value: 2.8mΩ R_DS(on) cuts rectifier loss to <2.4W at 200A, enabling smaller heatsink and higher power density vs. discrete diode solution.

Use Scenario: Half-bridge leg in 3kW servo drive inverter operating at 16kHz PWM frequency.

IC Role / Device Role / Timing Role: High-current, low-loss switching device in motor phase-leg with integrated body diode conducting freewheeling current.

Use Value: 175°C TJ rating and 100A continuous current at 100°C case temperature allow sustained operation under forced-air cooling without thermal throttling.

Active ORing Controller Interface

High-Power AC/DC PFC Stage

Use Scenario: Redundant 28V DC input system in avionics power distribution unit requiring seamless source switchover.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass element controlled by dedicated ORing IC to replace mechanical relay or ideal diode IC.

Use Value: 2.3mΩ typical R_DS(on) limits voltage drop to <230mV at 100A, reducing heat generation and enabling compact PCB layout with minimal thermal spread.

Use Scenario: Boost switch in 3.5kW offline AC/DC front-end with universal input (90–264VAC) and 400V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC stage operating at 65kHz.

Use Value: 209nC Q_g and 2590pF C_oss,eff enable efficient zero-voltage transition (ZVT) design with reduced switching loss and EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 30V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL325N3LLH6	30V, 325A, R_DS(on) = 1.6mΩ typ, PowerFLAT 8x8 package, no isolated tab	Surface-mount only; unsuitable for TO-247 heatsink mounting; lower R_DS(on) but higher Q_g (260nC)	Prefer for space-constrained SMT designs where thermal interface to PCB is optimized.
IXTH30N30P	300V, 30A, R_DS(on) = 30mΩ, TO-247, higher voltage rating, lower current	Not a drop-in replacement; intended for 300V applications like flyback snubber or auxiliary supplies	Select only if system requires higher V(BR)DSS margin and can accept 10× higher R_DS(on).

Compared with STL325N3LLH6 and IXTH30N30P, IRFP3703PBF uniquely balances ultra-low on-resistance, high current capability, and through-hole thermal management - making it optimal for high-power, heatsink-mounted synchronous rectification where reliability and serviceability matter.

Availability

IRFP3703PBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial motor drives, redundant DC power systems, and high-power AC/DC converters requiring stable component supply and long-term manufacturability.

Supply support for IRFP3703PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFP3703PBF belongs to Infineon's HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in telecom, server, and industrial power conversion systems demanding ruggedness and thermal stability.

FAQ

What is the maximum safe operating case temperature for continuous operation?

The IRFP3703PBF supports continuous operation up to 100°C case temperature, delivering 100A ID at that point per datasheet Fig. 9. Exceeding this requires derating per the linear derating factor of 1.5W/°C beyond 25°C ambient, with absolute maximum junction temperature capped at 175°C.

Is IRFP3703PBF suitable for paralleling multiple devices?

Yes - its positive R_DS(on) temperature coefficient (0.028V/°C) ensures inherent current sharing when paralleled. However, matched gate drive layout, identical PCB trace lengths, and symmetrical heatsinking are required to avoid imbalance; gate resistors ≥1.8Ω recommended per device to damp oscillation.

Does the body diode support continuous bidirectional current flow?

No - the intrinsic body diode is rated for pulsed source current (ISM = 1000A) and continuous source current (IS = 210A), but only conducts in the reverse direction relative to the MOSFET channel. It is not designed for sustained bidirectional conduction like a dedicated dual-diode module.

Can IRFP3703PBF be driven directly from a microcontroller GPIO?

No - its gate threshold voltage range (2.0–4.0V) and 209nC total gate charge require a dedicated gate driver (e.g., IR2110, UCC27531) capable of sourcing/sinking >2A peak current. Direct MCU drive would cause slow, lossy, and thermally unstable switching due to insufficient gate current.

IRFP3703PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 210A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 76A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 209 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP3703PBF FAQ

1.How can I place an order for IRFP3703PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP3703PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP3703PBF reliable?

The price and inventory of IRFP3703PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP3703PBF is usually 5 days.

3.What payment methods are accepted for IRFP3703PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP3703PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP3703PBF?

IRFP3703PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP3703PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP3703PBF?

For technical support, including IRFP3703PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP3703PBF requirements.

6.How does Aetrix verify that IRFP3703PBF is sourced from the original manufacturer or authorized distributors?

All IRFP3703PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP3703PBF meets industry standards.

7.What is the process for return or replacement of IRFP3703PBF?

All IRFP3703PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP3703PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP3703PBF part is unused and in its original packaging.

Return procedure for IRFP3703PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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