Infineon Technologies IRFP4110PBFXKMA1

Overview

IRFP4110PBFXKMA1 from Infineon Technologies is a 100V, 3.7mΩ typ. N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 120A continuous drain current (package-limited) and 670A pulsed drain current. It delivers high-efficiency synchronous rectification in SMPS and supports hard-switched, high-frequency power conversion up to 500kHz with 5.3V/ns peak diode recovery dv/dt ruggedness.

For engineers reviewing the IRFP4110PBFXKMA1 datasheet, IRFP4110PBFXKMA1 pinout, IRFP4110PBFXKMA1 application, or IRFP4110PBFXKMA1 equivalent, key selection criteria include its 4.5mΩ max. R_DS(on), 150nC typical gate charge, 9620pF input capacitance, avalanche energy rating of 190mJ (single-pulse), and body diode reverse recovery time of 50–75ns at 25°C.

Technical Context

This HEXFET® power MOSFET employs planar stripe cell structure with optimized gate oxide and trench-assisted charge balance for low conduction loss and robust unclamped inductive switching. Its dynamic parameters-including 43nC Miller charge, 820pF energy-related effective output capacitance (C_{oss eff. (ER)}), and 160S forward transconductance-are characterized across temperature for stable operation from –55°C to +175°C junction.

The device integrates an intrinsic p-n junction body diode with 1.3V forward voltage at 75A and 94–140nC reverse recovery charge, enabling high dI/dt capability (up to 630A/µs) and enhanced dv/dt immunity during commutation in bridge-leg and LLC resonant topologies.

Key Specifications

Pinout & Package

IRFP4110PBFXKMA1 uses the industry-standard TO-247AC package: isolated tab (drain-connected metal flange), 3-pin vertical lead frame with 2.54mm pitch, and non-surface-mount mechanical mounting via M3 screw (1.1N·m torque). The package provides low-inductance, high-current paths and direct heatsink coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Compared with STW100N10F7 and IXFH120N10P, IRFP4110PBFXKMA1 offers superior avalanche ruggedness (190mJ), lower gate charge (150nC vs. 170nC), and tighter R_DS(on) tolerance (3.7–4.5mΩ), making it optimal for mission-critical SMPS and uninterruptible power systems demanding fault resilience and thermal headroom.

Availability

IRFP4110PBFXKMA1 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed power switching applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP4110PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-frequency power conversion in server VRMs, telecom rectifiers, and industrial UPS systems where conduction loss, switching loss, and ruggedness must be simultaneously optimized.

FAQ

What is the maximum continuous drain current rating for IRFP4110PBFXKMA1 at 100°C case temperature?

The maximum continuous drain current is 130A at T_C = 100°C under silicon-limited conditions with V_GS = 10V. This value reflects thermal derating from the 180A rating at 25°C and remains within safe SOA limits when mounted on a properly heatsinked TO-247AC footprint with ≤0.402°C/W thermal resistance.

Does IRFP4110PBFXKMA1 support surface-mount assembly?

No. The TO-247AC package is explicitly not recommended for surface-mount applications due to mechanical stress risks, solder joint reliability concerns, and inadequate thermal transfer without through-hole mounting and screw-down heatsinking. It requires axial lead insertion and M3 mechanical fastening per Infineon AN-0994 guidelines.

How is the 5.3V/ns dv/dt rating validated for the body diode?

This rating is measured using the test circuit in Figure 21 per JEDEC standard JESD24-11, with ISD ≤ 75A, di/dt ≤ 630A/µs, VDD ≤ V(BR)DSS, and TJ ≤ 175°C. It confirms stable reverse recovery without parasitic turn-on under worst-case commutation stress in hard-switched bridge configurations.

What is the significance of C_{oss eff. (ER)} = 820pF versus C_oss = 670pF?

C_{oss eff. (ER)} represents the fixed capacitance that stores the same energy as the nonlinear C_oss during V_DS ramp from 0 to 80V. At 820pF, it quantifies actual turn-on switching loss more accurately than nominal C_oss, directly impacting efficiency calculations in high-frequency hard-switched topologies.