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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP4468PBFXKMA1

Name: IRFP4468PBFXKMA1
Brand: Infineon Technologies
SKU: IRFP4468PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP4468PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP4468PBFXKMA1.pdf

Description:: TRENCH >=100V PG-TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:300

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Product details

Overview

IRFP4468PBFXKMA1 from Infineon is a 100 V, 2.6 mΩ R_DS(on) N-channel enhancement-mode Power MOSFET in PG-TO247-3 package, rated for 195 A continuous drain current at T_C = 25 °C and 175 °C maximum junction temperature. It delivers high-efficiency synchronous rectification in SMPS, supports hard-switched high-frequency circuits, and features fully characterized avalanche SOA and dynamic dV/dt ruggedness.

For engineers reviewing the IRFP4468PBFXKMA1 datasheet, IRFP4468PBFXKMA1 pinout, IRFP4468PBFXKMA1 application, or IRFP4468PBFXKMA1 equivalent, key selection criteria include its 149 nC output charge (Q_oss), 363 nC total gate charge (Q_g), 0.29 °C/W thermal resistance (R_thJC), JEDEC-qualified industrial reliability, and Pb-free RoHS-compliant plating.

Technical Context

This StrongIRFET™ device uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-current DC-DC and AC-DC power stages. Its gate threshold voltage (2.0–4.0 V) enables robust drive compatibility with standard 10 V gate drivers, while its 740 mJ single-pulse avalanche energy rating supports reliable operation under transient overvoltage conditions.

The MOSFET exhibits tightly specified dynamic parameters: 22,000–29,000 pF input capacitance (C_iss), 1300–1700 pF output capacitance (C_oss), and 580–1000 pF reverse transfer capacitance (C_rss) at V_DS = 50 V, enabling predictable timing in resonant and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switching or secondary-side synchronous rectification in 48 V–60 V bus systems
R_DS(on), max	2.6 mΩ at V_GS = 10 V, I_D = 180 A - Enables <1.5 W conduction loss at 180 A, critical for high-current server PSU and UPS designs
I_D, cont	195 A at T_C = 25 °C - Supports high-power density designs without forced air cooling when mounted on ≥40 mm × 40 mm copper area
Q_g	363 nC (typ.) - Determines gate driver power requirement and switching loss trade-off in 100–500 kHz SMPS
R_thJC	0.29 °C/W - Allows direct thermal modeling of junction-to-case temperature rise under pulsed or DC load conditions
T_j, max	175 °C - Enables operation in harsh industrial environments with extended thermal margin versus standard 150 °C parts
E_AS	740 mJ - Specifies single-pulse avalanche capability for inductive turn-off protection in motor drives and PFC stages

Pinout & Package

IRFP4468PBFXKMA1 is housed in PG-TO247-3 package: isolated metal tab (drain), vertical leadframe, and industry-standard footprint compatible with TO-247 heatsink mounting. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; requires ≤10 V logic-level or 10–15 V power-stage drive; gate resistance R_G = 0.9 Ω typical
Pin 2 (Drain)	High-side power terminal	Connected to main power rail or transformer secondary; electrically tied to metal tab for direct heatsinking
Pin 3 (Source)	Reference/return path	Serves as local ground reference for gate driver; carries full load current and must be routed with low-inductance layout

Key Features

Feature	Design Value
JEDEC Industrial Qualification	Fully qualified per JESD47 and JESD22 standards - ensures long-term reliability in uncontrolled ambient environments
Avalanche Ruggedness	740 mJ single-pulse E_AS - eliminates need for external snubbers in flyback or LLC resonant converters
Dynamic dV/dt Immunity	Rated >50 V/ns - prevents false turn-on during high-speed switching in high-noise power stages
Thermal Performance	R_thJC = 0.29 °C/W - enables accurate thermal simulation and derating for 175 °C operation
Pb-Free & Halogen-Free	RoHS compliant per IEC61249-2-21 - meets global environmental compliance requirements for industrial and telecom equipment

Applications

Server Power Supply

Uninterruptible Power Supply

Use Scenario: High-density 48 V input, 12 V/540 A output DC-DC VRM in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck converter stage, operating at 300–500 kHz.

Use Value: 2.6 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 4 mΩ devices, improving system efficiency from 94.2% to 95.1% at full load.

Use Scenario: 3-phase online UPS with bidirectional 400 V DC link and 230 V AC output.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge inverter, handling 195 A peak current pulses.

Use Value: 175 °C T_j,max and 740 mJ E_AS ensure safe operation during grid fault transients without thermal shutdown or avalanche failure.

Industrial Motor Drive

High-Frequency SMPS

Use Scenario: 15 kW servo drive with regenerative braking and active front-end rectification.

IC Role / Device Role / Timing Role: Inverter leg switch in 3-phase bridge, switching at 10–20 kHz with 180 A RMS current.

Use Value: 0.29 °C/W R_thJC allows direct heatsink mounting without thermal interface material, reducing thermal stack-up by 0.5 °C/W.

Use Scenario: 1 kW resonant LLC adapter for medical imaging equipment requiring ultra-low EMI.

IC Role / Device Role / Timing Role: High-side switch in half-bridge LLC primary, operating at 350 kHz with soft switching.

Use Value: Low C_oss (1300–1700 pF) and C_rss (580–1000 pF) minimize capacitive losses and improve ZVS behavior across line/load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF10	R_DS(on) = 3.3 mΩ (higher), Q_g = 220 nC (lower), R_thJC = 0.35 °C/W (worse)	Lower switching loss but higher conduction loss; less suitable for >150 A continuous duty	Preferable where gate drive power is constrained and thermal margin exists
IXFH180N10P	R_DS(on) = 2.4 mΩ (slightly lower), Q_g = 420 nC (higher), T_j,max = 150 °C (lower)	Better conduction loss but reduced thermal headroom and higher driver demand	Preferred only if 175 °C operation is not required and PCB layout accommodates higher gate charge

Compared with STW90NF10 and IXFH180N10P, IRFP4468PBFXKMA1 offers the optimal balance of low R_DS(on), moderate Q_g, superior thermal resistance, and extended temperature rating-making it the most robust choice for high-reliability industrial and server power applications.

Availability

IRFP4468PBFXKMA1 is available at Aetrix Electronics and suitable for server power supplies, uninterruptible power systems, and industrial motor drives requiring stable component supply and long-term industrial qualification.

Supply support for IRFP4468PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The StrongIRFET™ product line targets high-efficiency, high-reliability power conversion in industrial, telecom, and computing applications-designed specifically for low R_DS(on), rugged avalanche performance, and JEDEC-qualified operation up to 175 °C.

FAQ

What is the maximum continuous drain current for IRFP4468PBFXKMA1 at 100 °C case temperature?

The maximum continuous drain current is 150 A at T_C = 100 °C, as specified in Table 2 of the Infineon datasheet. This value reflects thermal de-rating due to reduced heat dissipation capability at elevated case temperatures and assumes proper heatsinking with R_thJC = 0.29 °C/W and adequate PCB copper area.

Does IRFP4468PBFXKMA1 have an integrated body diode, and what is its forward voltage?

Yes, it includes a built-in anti-parallel body diode rated for 177 A continuous forward current at T_C = 25 °C. Its typical forward voltage is 0.96 V at I_F = 180 A and T_j = 25 °C, rising to ~1.3 V at higher currents or temperatures, as shown in Table 7 of the datasheet.

Can IRFP4468PBFXKMA1 be used in synchronous rectification without external gate driving circuitry?

No-it requires an active gate driver with sufficient peak current (>2 A) and precise timing control to manage the 363 nC total gate charge. Its gate threshold voltage (2.0–4.0 V) and lack of integrated driver preclude self-driven or transformer-coupled gate schemes in high-frequency SMPS.

Is IRFP4468PBFXKMA1 compliant with halogen-free and RoHS directives?

Yes-Infineon certifies IRFP4468PBFXKMA1 as Pb-free and halogen-free per IEC61249-2-21, with RoHS compliance confirmed in the official datasheet revision 1.0. The "PbF" suffix explicitly denotes lead-free lead plating, and all packaging materials meet EU Directive 2011/65/EU requirements.

IRFP4468PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 290A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 180A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 540 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 19860 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP4468PBFXKMA1 FAQ

1.How can I place an order for IRFP4468PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4468PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4468PBFXKMA1 reliable?

The price and inventory of IRFP4468PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4468PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFP4468PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4468PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4468PBFXKMA1?

IRFP4468PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4468PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4468PBFXKMA1?

For technical support, including IRFP4468PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4468PBFXKMA1 requirements.

6.How does Aetrix verify that IRFP4468PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFP4468PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4468PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFP4468PBFXKMA1?

All IRFP4468PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4468PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4468PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFP4468PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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