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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFP448PBF

Name: IRFP448PBF
Brand: Vishay Siliconix
SKU: IRFP448PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP448PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP448PBF.pdf

Description:: MOSFET N-CH 500V 11A TO247-3

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Product details

Overview

IRFP448PBF from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in TO-247AC package, featuring 0.60 Ω R_DS(on) at V_GS = 10 V, 84 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor drives, and industrial SMPS where ruggedness and fast switching are critical.

For engineers reviewing the IRFP448PBF datasheet, IRFP448PBF pinout, IRFP448PBF application, or IRFP448PBF equivalent, key selection considerations include its isolated mounting hole for enhanced creepage, 550 mJ single-pulse avalanche energy, 3.5 V/ns peak diode recovery dV/dt rating, and compatibility with standard gate drivers due to simple drive requirements.

Technical Context

This third-generation power MOSFET uses planar V-groove technology optimized for high-voltage operation and thermal robustness. Its design integrates a low-inductance internal structure (L_D = 5.0 nH, L_S = 13 nH) and a monolithic body diode with 480–1100 ns reverse recovery time (t_rr) and 5.2–12 μC Q_rr, enabling reliable unclamped inductive switching.

The device supports repetitive avalanche operation up to I_AR = 11 A and E_AR = 18 mJ, with thermal resistance R_thJC = 0.70 °C/W and R_thCS = 0.24 °C/W, allowing efficient heatsink coupling via its isolated central mounting hole-critical for high-power industrial systems operating up to T_J = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands DC bus voltages up to 400 V in practical SMPS designs with margin
R_DS(on) @ V_GS = 10 V	0.60 Ω - Enables ≤ 44 W conduction loss at 9.6 A continuous drain current
Q_g	84 nC - Determines gate driver power requirement and switching speed trade-off
I_D @ T_C = 100 °C	6.6 A - Defines usable current in thermally constrained enclosures without forced cooling
E_AS	550 mJ - Supports safe energy absorption during single-event inductive turn-off transients
dV/dt Rating	3.5 V/ns - Ensures immunity to parasitic turn-on during high-slew-rate voltage transitions
T_J Range	−55 to +150 °C - Validated for extended industrial temperature operation including motor control environments

Pinout & Package

IRFP448PBF is housed in a TO-247AC package with an isolated central mounting hole, 3.61 mm diameter screw hole (ØP), and 0.24 °C/W case-to-sink thermal resistance on greased flat surfaces. The plastic body conforms to JEDEC TO-247 outline AC variant with 20.55 mm width (D), 15.70 mm height (E), and 15.15 mm lead length (L).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level gate drive; threshold voltage 2.0–4.0 V enables compatibility with standard PWM controllers
2 (Drain)	High-side power terminal	Connected to DC bus or inductive load; electrically tied to metal tab for low-inductance heat path
3 (Source)	Power return / reference	Serves as local ground reference for gate drive; internal source inductance (13 nH) impacts diode recovery behavior
4 (Drain)	Redundant high-side terminal	Parallel drain connection reduces effective package inductance and improves current sharing in paralleled configurations

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 11 A repetitive avalanche current (I_AR) and 18 mJ energy (E_AR) without degradation-enables robust overvoltage protection in flyback and resonant topologies
Isolated central mounting hole	Enables direct mechanical attachment to heatsink without electrical shorting-increases creepage distance to meet IEC/UL safety standards for >400 V systems
Fast switching with low Q_gd/Q_g	Q_gd = 50 nC of 84 nC total gate charge minimizes Miller plateau duration, reducing switching losses in hard-switched 100 kHz+ applications
Dynamic dV/dt rating	3.5 V/ns capability prevents false turn-on during rapid voltage transients across drain-source-critical in half-bridge and LLC resonant converters
Low R_thJC and R_thCS	0.70 °C/W junction-to-case and 0.24 °C/W case-to-sink enable >150 W dissipation with moderate heatsinking-suitable for 500 W+ industrial power supplies

Applications

Industrial Motor Drives	High-Voltage DC-DC Converters
Use Scenario: Three-phase inverter stage in 400 V AC-fed servo drives operating at 8–16 kHz PWM frequency. IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET hybrid bridge, handling 11 A RMS output current with 500 V blocking capability. Use Value: Repetitive avalanche rating absorbs regenerative energy during motor deceleration; isolated mounting hole simplifies insulated heatsink integration per IEC 61800-5-1.	Use Scenario: Primary-side switch in 48–54 V output, 1 kW telecom rectifier using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Main power switch subjected to 400 V DC bus, 100 kHz switching, and unclamped inductive turn-off stress. Use Value: 550 mJ E_AS withstands worst-case turn-off events; 0.60 Ω R_DS(on) limits conduction loss to <3.5 W at full load.
Uninterruptible Power Supplies (UPS)	Induction Heating Systems
Use Scenario: Bidirectional DC link switch in online double-conversion UPS with battery backup and 380 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch managing bidirectional power flow under fault conditions. Use Value: Body diode t_rr = 480–1100 ns and Q_rr = 5.2–12 μC enable controlled commutation; 150 °C T_J rating sustains operation during overload events.	Use Scenario: Half-bridge inverter in 20–50 kW medium-frequency induction heating units operating at 20–80 kHz. IC Role / Device Role / Timing Role: High-current, high-dV/dt switching device driving series-resonant tank with 11 A peak current. Use Value: 3.5 V/ns dV/dt immunity prevents spurious turn-on during zero-crossing transitions; low L_S/L_D minimizes voltage overshoot during hard switching.

Industrial Motor Drives

High-Voltage DC-DC Converters

Use Scenario: Three-phase inverter stage in 400 V AC-fed servo drives operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side switching element in IGBT/MOSFET hybrid bridge, handling 11 A RMS output current with 500 V blocking capability.

Use Value: Repetitive avalanche rating absorbs regenerative energy during motor deceleration; isolated mounting hole simplifies insulated heatsink integration per IEC 61800-5-1.

Use Scenario: Primary-side switch in 48–54 V output, 1 kW telecom rectifier using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Main power switch subjected to 400 V DC bus, 100 kHz switching, and unclamped inductive turn-off stress.

Use Value: 550 mJ E_AS withstands worst-case turn-off events; 0.60 Ω R_DS(on) limits conduction loss to <3.5 W at full load.

Uninterruptible Power Supplies (UPS)

Induction Heating Systems

Use Scenario: Bidirectional DC link switch in online double-conversion UPS with battery backup and 380 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch managing bidirectional power flow under fault conditions.

Use Value: Body diode t_rr = 480–1100 ns and Q_rr = 5.2–12 μC enable controlled commutation; 150 °C T_J rating sustains operation during overload events.

Use Scenario: Half-bridge inverter in 20–50 kW medium-frequency induction heating units operating at 20–80 kHz.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching device driving series-resonant tank with 11 A peak current.

Use Value: 3.5 V/ns dV/dt immunity prevents spurious turn-on during zero-crossing transitions; low L_S/L_D minimizes voltage overshoot during hard switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, 0.065 Ω R_DS(on), TO-247 package, but no isolated mounting hole	Better conduction efficiency at lower voltages; lacks creepage-enhancing mounting feature for high-isolation systems	Preferred when lower R_DS(on) dominates over safety spacing requirements
IXFH32N50P	500 V V_DS, 0.15 Ω R_DS(on), 62 nC Q_g, TO-247 package with isolated hole	Lower gate charge and on-resistance, but reduced avalanche energy (E_AS = 320 mJ vs. 550 mJ)	Selected when faster switching and lower losses outweigh need for highest transient energy tolerance

Compared with STW48N60M2 and IXFH32N50P, IRFP448PBF offers superior single-pulse avalanche ruggedness and certified creepage enhancement via its isolated mounting hole-making it preferred for safety-critical industrial inverters and high-reliability SMPS where layout constraints limit isolation margins.

Availability

IRFP448PBF is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFP448PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with vertical integration across silicon wafer fabrication and advanced packaging.

The Vishay Siliconix power MOSFET product line-including IRFP448PBF-is engineered for high-reliability industrial, automotive, and telecom power conversion, emphasizing ruggedness, thermal performance, and safety-compliant packaging.

FAQ

What is the maximum continuous drain current for IRFP448PBF at 100 °C case temperature?

The maximum continuous drain current for IRFP448PBF is 6.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 11 A rating at 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions for IRFP448PBF.

Does IRFP448PBF have an isolated mounting hole, and why is it important?

Yes, IRFP448PBF features an isolated central mounting hole per TO-247AC package specification. This design electrically isolates the metal tab (drain-connected) from the heatsink, increasing creepage distance beyond standard TO-247 variants. It is critical for meeting IEC/UL insulation requirements in 400–500 V systems, such as industrial motor drives and UPS inverters, where reinforced isolation between high-voltage circuitry and chassis ground is mandated.

What is the body diode reverse recovery time (t_rr) of IRFP448PBF, and how does it affect hard-switched applications?

The body diode reverse recovery time (t_rr) of IRFP448PBF is 480–1100 ns at T_J = 25 °C, I_F = 9.6 A, and dI/dt = 100 A/μs. In hard-switched topologies like phase-shifted full-bridge, this parameter directly influences switching loss, voltage overshoot, and EMI generation during commutation. Designers must account for t_rr in snubber design and gate drive timing to avoid shoot-through and ensure reliable zero-voltage switching transitions for IRFP448PBF.

Can IRFP448PBF be used in parallel configurations, and what design considerations apply?

Yes, IRFP448PBF is designed for ease of paralleling, supported by its positive temperature coefficient of R_DS(on) and matched dynamic parameters across units. Key considerations include symmetrical PCB layout, individual gate resistors (RG ≈ 7.8 Ω per device), and Kelvin-source connections to minimize current imbalance. The dual-drain pin configuration (pins 2 and 4) further reduces package inductance, improving current sharing stability in high-current (>30 A) applications using multiple IRFP448PBF devices.

What is the gate threshold voltage range for IRFP448PBF, and how does it impact gate driver selection?

The gate threshold voltage (V_GS(th)) for IRFP448PBF is 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers and excludes logic-level (≤5 V) drive requirements. To ensure full enhancement and minimal R_DS(on), gate drive must deliver ≥10 V with sufficient peak current (≥1 A) to charge 84 nC Q_g rapidly-making IRFP448PBF suitable for UC384x, UCC27xx, and similar controllers without level-shifting circuitry.

IRFP448PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP448PBF FAQ

1.How can I place an order for IRFP448PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP448PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP448PBF reliable?

The price and inventory of IRFP448PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP448PBF is usually 5 days.

3.What payment methods are accepted for IRFP448PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP448PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP448PBF?

IRFP448PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP448PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP448PBF?

For technical support, including IRFP448PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP448PBF requirements.

6.How does Aetrix verify that IRFP448PBF is sourced from the original manufacturer or authorized distributors?

All IRFP448PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP448PBF meets industry standards.

7.What is the process for return or replacement of IRFP448PBF?

All IRFP448PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP448PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP448PBF part is unused and in its original packaging.

Return procedure for IRFP448PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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