Vishay Siliconix IRFP450
- Part No.:
- IRFP450
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFP450.pdf
- Description:
- MOSFET N-CH 500V 14A TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,058
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFP450 from Vishay Siliconix is a 500 V, 14 A N-channel power MOSFET in TO-247AC package, featuring 0.40 Ω RDS(on) at VGS = 10 V, 150 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switching in offline SMPS, motor drives, and DC-DC converters.
For engineers reviewing the IRFP450 datasheet, IRFP450 pinout, IRFP450 application, or IRFP450 equivalent, key selection criteria include its 500 V VDS, isolated mounting hole for thermal management, 760 mJ single-pulse avalanche energy, and compatibility with standard gate drivers due to simple drive requirements.
Technical Context
The IRFP450 employs a third-generation planar vertical DMOS structure optimized for ruggedness and fast switching. Its dynamic dV/dt rating of 3.5 V/ns and body diode reverse recovery time (540–810 ns) support reliable operation under inductive load commutation.
Thermal design is enabled by low RthJC (0.65 °C/W) and an isolated central mounting hole in the TO-247AC package. The device sustains repetitive avalanche current up to 8.7 A and operates across -55 °C to +150 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands mains-referenced DC bus voltages in 400 V AC-input offline converters. |
| RDS(on) | 0.40 Ω @ VGS = 10 V - Limits conduction loss to ≤ 47 W at 14 A continuous drain current. |
| Qg | 150 nC - Requires ≥ 1.5 A peak gate drive for 100 ns turn-on with 10 V step input. |
| EAS | 760 mJ - Absorbs unclamped inductive energy without failure in flyback or hard-switched topologies. |
| ID (TC = 100 °C) | 8.7 A - Defines usable current derating in thermally constrained heatsink environments. |
| dV/dt Rating | 3.5 V/ns - Ensures immunity to parasitic turn-on during high-slew-rate voltage transients. |
| TJ Range | -55 to +150 °C - Supports industrial and extended-temperature embedded power systems. |
Pinout & Package
IRFP450 uses the TO-247AC package with isolated central mounting hole, 3-pin configuration (Gate, Drain, Source), and creepage distances compliant with commercial-industrial safety standards. Thermal pad contour is optional per version.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; ±20 V absolute max rating prevents oxide damage. |
| 2 (Drain) | High-side power terminal | Connected to DC bus or transformer primary; electrically tied to metal tab and thermal pad. |
| 3 (Source) | Power return reference | Serves as local ground reference for gate driver; carries full load current and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive Avalanche Rated | Withstands 8.7 A repetitive avalanche current and 19 mJ energy-enables robust operation in inductive switching without external snubbers. |
| Isolated Central Mounting Hole | Enables mechanical attachment to heatsink without electrical shorting to Drain, simplifying thermal design in high-voltage isolation schemes. |
| Fast Switching | 17 ns turn-on delay + 47 ns rise time at VDD = 250 V enables >100 kHz operation in resonant and hard-switched topologies. |
| Dynamic dV/dt Rating | 3.5 V/ns threshold prevents spurious turn-on during high dv/dt events common in bridge-leg configurations. |
| Ease of Paralleling | Positive temperature coefficient of RDS(on) ensures inherent current sharing when multiple IRFP450 devices operate in parallel. |
Applications
| Offline AC-DC Power Supplies | Industrial Motor Drives |
|---|---|
Use Scenario: Primary-side switch in 300–500 W universal-input flyback or forward converters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from rectified AC line to transformer primary. Use Value: 500 V VDS and 760 mJ EAS eliminate need for clamping circuits during transformer reset. | Use Scenario: Inverter leg switch in 1–3 HP variable-frequency drives for pumps and fans. IC Role / Device Role / Timing Role: Half-bridge power stage element handling 400 V DC bus and PWM-modulated motor phase currents. Use Value: Repetitive avalanche rating and 3.5 V/ns dV/dt immunity prevent shoot-through failures during PWM edge transitions. |
| DC-DC Boost Converters | Inductive Load Switching |
Use Scenario: Main switch in high-voltage boost stages for PV string inverters or battery chargers. IC Role / Device Role / Timing Role: Sustains 400–500 V output while switching 10–14 A inductor current at 50–100 kHz. Use Value: Low Qg/RDS(on) ratio reduces combined switching and conduction losses below 5% efficiency penalty. | Use Scenario: Solenoid, relay, or transformer primary driver in industrial control panels. IC Role / Device Role / Timing Role: Unclamped inductive load switch requiring integrated body diode recovery and avalanche energy absorption. Use Value: Body diode trr of 540–810 ns and Qrr of 4.8–7.2 μC minimize voltage overshoot and EMI during turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK50Z | 500 V, 14 A, RDS(on) = 0.42 Ω, Qg = 45 nC, Zener-protected gate | Lower gate charge improves switching efficiency but reduced avalanche ruggedness (EAS = 420 mJ) | Preferred where gate drive loss dominates and avalanche stress is minimal. |
| FQP4N50 | 500 V, 4 A, RDS(on) = 1.4 Ω, Qg = 24 nC, TO-220 package | Lower current rating and higher on-resistance limit use to ≤100 W designs; no isolated mounting hole | Cost-sensitive low-power replacements where thermal constraints allow TO-220 mounting. |
Compared with STP14NK50Z and FQP4N50, the IRFP450 delivers superior avalanche ruggedness and thermal performance via TO-247AC packaging-making it the preferred choice for 300+ W industrial power stages where reliability under transient overload is critical.
Availability
IRFP450 is available at Aetrix Electronics and suitable for offline AC-DC power supplies, industrial motor drives, and DC-DC boost converters requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFP450 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFP450 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for rugged switching in high-energy industrial power conversion systems where avalanche capability and thermal stability are mandatory.
FAQ
What is the maximum continuous drain current for IRFP450 at 100 °C case temperature?
The IRFP450 supports 8.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-247AC package and must be validated against actual heatsink performance and ambient conditions in the target application. The IRFP450's RthJC of 0.65 °C/W enables effective heat transfer to properly sized heatsinks.
Does IRFP450 have an integrated body diode, and what are its key recovery characteristics?
Yes, the IRFP450 includes an integral reverse p-n junction body diode rated for 14 A continuous and 56 A pulsed conduction. Its reverse recovery time (trr) is 540–810 ns at TJ = 25 °C, IF = 14 A, and dI/dt = 100 A/μs, with Qrr ranging from 4.8 to 7.2 μC. These values are critical for minimizing voltage overshoot in inductive switching circuits. The IRFP450's body diode performance is documented in the "Drain-Source Body Diode Characteristics" section of its datasheet.
Can IRFP450 be used in parallel configurations, and what design considerations apply?
Yes, the IRFP450 is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes natural current sharing. To ensure balanced operation, use matched gate resistors (≤ 6.2 Ω), symmetrical PCB layout with equal trace lengths, and individual source inductance minimization. The IRFP450's low gate charge (150 nC) also reduces gate drive complexity in multi-device arrays. Always verify thermal coupling and current distribution under worst-case load conditions.
What is the significance of the isolated central mounting hole in the IRFP450 TO-247AC package?
The isolated central mounting hole in the IRFP450's TO-247AC package allows direct mechanical attachment to a heatsink without creating an electrical short to the Drain terminal, which is tied to the metal tab. This feature simplifies thermal management in high-voltage isolation schemes-such as offline SMPS primary-side layouts-where maintaining creepage and clearance between high-side power and chassis ground is essential. The IRFP450's design eliminates the need for insulating washers or thermal pads with dielectric breakdown concerns.
How does the IRFP450's dynamic dV/dt rating impact circuit reliability?
The IRFP450's guaranteed dynamic dV/dt rating of 3.5 V/ns prevents spurious turn-on caused by rapid voltage transients across the Drain-Source terminals-common in half-bridge and full-bridge topologies during cross-conduction events. Exceeding this rating risks unintended gate triggering through Miller capacitance (Crss = 340 pF), leading to shoot-through failures. Maintaining gate drive impedance and layout symmetry ensures the IRFP450 remains immune to such effects within its specified operating envelope.
IRFP450 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFP450 FAQ
1.How can I place an order for IRFP450 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFP450 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFP450 reliable?
The price and inventory of IRFP450 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP450 is usually 5 days.
3.What payment methods are accepted for IRFP450?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP450 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFP450?
IRFP450 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFP450 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFP450?
For technical support, including IRFP450 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP450 requirements.
6.How does Aetrix verify that IRFP450 is sourced from the original manufacturer or authorized distributors?
All IRFP450 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP450 meets industry standards.
7.What is the process for return or replacement of IRFP450?
All IRFP450 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP450, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFP450 part is unused and in its original packaging.
Return procedure for IRFP450:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFP450 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

