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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFP450A

Name: IRFP450A
Brand: Vishay Siliconix
SKU: IRFP450A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP450A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP450A.pdf

Description:: MOSFET N-CH 500V 14A TO247-3

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Product details

Overview

IRFP450A from Vishay Siliconix is a 500 V, 14 A N-channel enhancement-mode power MOSFET in TO-247AC package, optimized for high-voltage switching in SMPS and UPS systems with R_DS(on) = 0.40 Ω at V_GS = 10 V, Q_g = 64 nC, and robust avalanche energy rating of 760 mJ (single-pulse). It serves as a primary switching device in hard-switched bridge topologies.

For engineers reviewing the IRFP450A datasheet, IRFP450A pinout, IRFP450A application, or IRFP450A equivalent, key selection criteria include its 500 V blocking capability, 190 W power dissipation at T_C = 25 °C, low C_{oss eff.} = 96 pF, and validated unclamped inductive switching performance under repetitive avalanche conditions.

Technical Context

The IRFP450A employs planar vertical DMOS technology with fully characterized capacitance profiles (C_iss = 2038 pF, C_oss = 307 pF, C_rss = 10 pF) and specified effective output capacitance (C_{oss eff.} = 96 pF) for accurate snubber and timing calculations. Its gate threshold voltage range (2.0–4.0 V) ensures stable turn-on across temperature and process variation.

Dynamic performance is defined by measured switching times: t_d(on) = 15 ns, t_r = 36 ns, t_d(off) = 35 ns, t_f = 29 ns under V_DD = 250 V, I_D = 14 A, R_G = 6.2 Ω conditions. The integrated body diode supports synchronous rectification with t_rr = 487–731 ns and Q_rr = 3.9–5.8 μC at T_J = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Maximum drain-source blocking voltage; defines use in ≥400 V DC bus applications like PFC boost and offline SMPS.
R_DS(on)	0.40 Ω @ V_GS = 10 V - Conduction loss contributor; yields ~79 W I²R loss at 14 A continuous current.
Q_g	64 nC - Total gate charge; determines driver strength requirement and switching loss trade-off in high-frequency operation.
E_AS	760 mJ - Single-pulse avalanche energy rating; enables reliable operation during transient overvoltage events without external clamping.
T_J Range	−55 to +150 °C - Extended junction temperature range supports industrial and UPS environments with high ambient thermal stress.
R_thJC	0.65 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with predictable thermal path for 190 W power dissipation.
I_D (T_C = 100 °C)	8.7 A - Derated continuous drain current at elevated case temperature; informs thermal design margin in convection-cooled enclosures.

Pinout & Package

IRFP450A is housed in a TO-247AC (JEDEC standard) package with isolated drain tab, rated for high-voltage isolation and high-power thermal dissipation. The plastic body features a thermal pad (D1/E1 optional contour), 3.61 mm diameter mounting hole (ØP), and 15.15 mm typical lead length (L).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; requires <64 nC charge for full enhancement; gate leakage ≤ ±100 nA at ±30 V.
2 (Drain)	High-side power terminal	Connected to drain metallization and case tab; carries full load current and withstands 500 V; electrically tied to heatsink.
3 (Source)	Reference and return node	Serves as signal ground reference for gate drive; source inductance directly impacts dV/dt immunity and switching oscillation.
4 (Drain)	Secondary drain connection	Redundant drain terminal for improved current sharing and reduced package inductance in high-di/dt applications.

Key Features

Feature	Design Value
Low Q_g	64 nC total gate charge reduces driver complexity and switching losses in 50–200 kHz SMPS designs.
Characterized C_{oss eff.}	96 pF effective output capacitance enables precise calculation of turn-off loss and resonant timing in ZVS/ZCS circuits.
Avalanche ruggedness	760 mJ single-pulse and 19 mJ repetitive avalanche energy support reliable operation during inductive load switching transients.
Body diode recovery	t_rr = 487–731 ns and Q_rr = 3.9–5.8 μC allow controlled freewheeling in half-bridge configurations without excessive voltage overshoot.
Thermal performance	R_thJC = 0.65 °C/W and R_thCS = 0.24 °C/W enable >150 W sustained power handling with standard mechanical mounting.

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in two-transistor forward converter operating from 375 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to transformer primary; operates at 100 kHz with hard commutation. Use Value: 500 V V_DS rating provides 25 % margin above nominal bus; 0.40 Ω R_DS(on) limits conduction loss to <8 W at 10 A RMS.	Use Scenario: Inverter stage H-bridge in line-interactive UPS delivering 1 kVA output. IC Role / Device Role / Timing Role: High-side and low-side switching element in full-bridge topology; handles bidirectional current during battery backup mode. Use Value: 14 A continuous current and 56 A pulsed rating support peak loads; avalanche rating absorbs inductive kickback during transfer switching.
High-Speed Power Switching	Power Factor Correction (PFC)
Use Scenario: Solid-state relay replacement in industrial motor control with 400 V AC input. IC Role / Device Role / Timing Role: Fast-turning main power switch enabling sub-100 ns transition times and minimal dead-time loss. Use Value: 15 ns turn-on delay and 29 ns fall time reduce switching window; low C_rss = 10 pF minimizes Miller-induced shoot-through risk.	Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for server PSU. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch shaping input current waveform; operates at 65–100 kHz with high duty-cycle swing. Use Value: 0.40 Ω R_DS(on) maintains efficiency >96 % at full load; 64 nC Q_g allows use with low-cost gate drivers like UCC27324.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in two-transistor forward converter operating from 375 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to transformer primary; operates at 100 kHz with hard commutation.

Use Value: 500 V V_DS rating provides 25 % margin above nominal bus; 0.40 Ω R_DS(on) limits conduction loss to <8 W at 10 A RMS.

Use Scenario: Inverter stage H-bridge in line-interactive UPS delivering 1 kVA output.

IC Role / Device Role / Timing Role: High-side and low-side switching element in full-bridge topology; handles bidirectional current during battery backup mode.

Use Value: 14 A continuous current and 56 A pulsed rating support peak loads; avalanche rating absorbs inductive kickback during transfer switching.

High-Speed Power Switching

Power Factor Correction (PFC)

Use Scenario: Solid-state relay replacement in industrial motor control with 400 V AC input.

IC Role / Device Role / Timing Role: Fast-turning main power switch enabling sub-100 ns transition times and minimal dead-time loss.

Use Value: 15 ns turn-on delay and 29 ns fall time reduce switching window; low C_rss = 10 pF minimizes Miller-induced shoot-through risk.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for server PSU.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch shaping input current waveform; operates at 65–100 kHz with high duty-cycle swing.

Use Value: 0.40 Ω R_DS(on) maintains efficiency >96 % at full load; 64 nC Q_g allows use with low-cost gate drivers like UCC27324.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW45NM50	500 V, 45 A, R_DS(on) = 0.10 Ω, Q_g = 120 nC, TO-247 package	Higher current rating but larger gate charge increases driver demand and switching loss at same frequency.	Preferred when higher continuous current (>20 A) is required and gate drive capability supports 120 nC.
IXFH40N50P	500 V, 40 A, R_DS(on) = 0.125 Ω, Q_g = 110 nC, TO-247 package	Lower R_DS(on) improves conduction efficiency but higher Q_g degrades high-frequency switching performance.	Selected for lower conduction loss in thermally constrained 50–100 kHz PFC stages where gate drive headroom exists.

Compared with STW45NM50 and IXFH40N50P, the IRFP450A offers balanced trade-offs: moderate R_DS(on) and Q_g suit cost-sensitive 10–100 kHz SMPS designs where driver simplicity and avalanche robustness outweigh ultra-low on-resistance needs.

Availability

IRFP450A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed industrial switching applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.

Supply support for IRFP450A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, computing, and power systems.

The IRFP450A belongs to Vishay's high-voltage power MOSFET product line, engineered for ruggedness and consistency in offline power conversion, with emphasis on avalanche energy, dynamic dV/dt immunity, and thermal stability.

FAQ

What is the maximum continuous drain current rating for the IRFP450A at 100 °C case temperature?

The IRFP450A has a maximum continuous drain current of 8.7 A when the case temperature is maintained at 100 °C. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to sustain this current in real-world conditions.

Does the IRFP450A have a fully characterized body diode, and what are its key recovery parameters?

Yes, the IRFP450A includes a fully characterized integral body diode with t_rr = 487–731 ns and Q_rr = 3.9–5.8 μC at T_J = 25 °C, IF = 14 A, and dI/dt = 100 A/μs. These values are critical for predicting voltage overshoot and switching loss in half-bridge and synchronous rectifier applications where the diode conducts freewheeling current.

What is the significance of the "Coss eff." parameter listed as 96 pF for the IRFP450A?

The effective output capacitance (Coss eff. = 96 pF) represents a fixed capacitance value that produces the same V_DS charging time as the actual nonlinear C_oss during 0–80 % V_DS rise. For the IRFP450A, this simplifies snubber design and turn-off loss estimation in hard-switched topologies where C_oss varies significantly with voltage.

Can the IRFP450A be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRFP450A is rated for unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 760 mJ under test conditions of L = 7.8 mH, R_G = 25 Ω, and I_AS = 14 A. This specification validates its ability to absorb transient energy without failure, making it suitable for flyback and forward converters without external clamping.

What are the gate drive requirements for achieving full enhancement of the IRFP450A?

The IRFP450A requires a minimum V_GS of 10 V to achieve its specified R_DS(on) of 0.40 Ω. Gate threshold voltage ranges from 2.0 V to 4.0 V, so drive circuits must supply ≥10 V with sufficient current to deliver 64 nC total gate charge. A 6.2 Ω gate resistor yields measured t_d(on) = 15 ns and t_f = 29 ns in standard test conditions.

IRFP450A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2038 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP450A FAQ

1.How can I place an order for IRFP450A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP450A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP450A reliable?

The price and inventory of IRFP450A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP450A is usually 5 days.

3.What payment methods are accepted for IRFP450A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP450A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP450A?

IRFP450A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP450A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP450A?

For technical support, including IRFP450A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP450A requirements.

6.How does Aetrix verify that IRFP450A is sourced from the original manufacturer or authorized distributors?

All IRFP450A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP450A meets industry standards.

7.What is the process for return or replacement of IRFP450A?

All IRFP450A units undergo pre-shipment inspection (PSI). If there is an issue with IRFP450A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP450A part is unused and in its original packaging.

Return procedure for IRFP450A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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