Vishay Siliconix IRFP450LC

Overview

IRFP450LC from Vishay Siliconix is a 500 V, 14 A N-channel power MOSFET in TO-247AC package, featuring 0.40 Ω R_DS(on) at V_GS = 10 V, 74 nC total gate charge, and repetitive avalanche rating up to 14 A - designed for high-voltage switching in industrial SMPS, motor drives, and UPS systems.

For engineers reviewing the IRFP450LC datasheet, IRFP450LC pinout, IRFP450LC application, or IRFP450LC equivalent, key selection criteria include its 500 V V_DS, isolated mounting hole in TO-247AC, dynamic dV/dt rating of 3.5 V/ns, and proven ruggedness in unclamped inductive switching with 760 mJ single-pulse avalanche energy.

Technical Context

This device employs advanced planar vertical DMOS technology optimized for low gate charge (Q_g = 74 nC) and reduced capacitance (C_iss = 2200 pF, C_oss = 320 pF), enabling faster switching and lower drive losses. Its ±30 V gate-source voltage rating supports robust gate drive margin under transient conditions.

The IRFP450LC integrates a fast-recovery body diode (t_rr = 580–870 ns, Q_rr = 5.1–7.7 μC) and is rated for repetitive avalanche operation (I_AR = 14 A, E_AR = 19 mJ), making it suitable for hard-switched topologies where inductive energy must be safely clamped without external snubbers.

Key Specifications

Pinout & Package

IRFP450LC uses the TO-247AC package (JEDEC standard), featuring an isolated central mounting hole for electrical isolation from heatsink, flat thermal pad for low R_thJC = 0.65 °C/W, and four-terminal drain configuration (pins 2 and 4 both connected to drain).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP14NK50ZFP and IXFH12N50P, the IRFP450LC delivers superior thermal management via its isolated TO-247AC mounting, higher avalanche robustness (760 mJ E_AS, 14 A I_AR), and tighter gate charge control - critical for reliability in high-stress industrial power conversion.

Availability

IRFP450LC is available at Aetrix Electronics and suitable for industrial SMPS, uninterruptible power supplies, and motor drive output stages requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.

Supply support for IRFP450LC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The IRFP450LC belongs to Vishay's high-voltage Power MOSFET family engineered for ruggedness in hard-switched, high-dV/dt environments - targeting applications where avalanche capability, gate drive simplicity, and thermal stability are non-negotiable.

FAQ

What is the maximum continuous drain current for IRFP450LC at 100 °C case temperature?

The IRFP450LC supports 8.6 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe junction temperature operation below 150 °C. Designers must verify heatsink sizing using R_thJC = 0.65 °C/W and ambient conditions to maintain this rating in actual IRFP450LC deployments.

Does IRFP450LC have a fully rated avalanche capability, and how is it validated?

Yes, the IRFP450LC is repetitively avalanche rated per datasheet Section "Absolute Maximum Ratings": I_AR = 14 A and E_AR = 19 mJ. Validation follows JEDEC JESD24-11 methodology using unclamped inductive switching (UIS) tests at T_J = 25 °C, with pulse width limited by junction temperature rise. The IRFP450LC also achieves 760 mJ single-pulse E_AS, confirming robustness against transient overloads without failure.

What is the significance of the isolated mounting hole in the TO-247AC package of IRFP450LC?

The isolated mounting hole in the IRFP450LC's TO-247AC package electrically separates the drain-connected metal tab from the mechanical mounting point. This eliminates the need for insulating pads or shoulder washers when attaching to a grounded heatsink - reducing thermal resistance, assembly cost, and risk of dielectric breakdown. It directly supports safer, more compact high-voltage PCB layouts where drain is held at high potential relative to system ground.

How does the body diode performance of IRFP450LC compare to standard silicon diodes in freewheeling applications?

The IRFP450LC's integral body diode exhibits t_rr = 580–870 ns and Q_rr = 5.1–7.7 μC at T_J = 25 °C, significantly faster than general-purpose rectifiers but slower than dedicated SiC Schottky diodes. Its V_SD = 1.4 V at 14 A enables low-loss freewheeling in synchronous rectification or half-bridge shoot-through recovery, though designers should account for reverse recovery losses in high-frequency operation. This makes the IRFP450LC suitable for 20–200 kHz applications where trade-offs between cost, integration, and diode performance are balanced.

Can IRFP450LC be used as a direct replacement for IRFP450 in existing designs?

Yes, the IRFP450LC is a drop-in replacement for the legacy IRFP450, sharing identical TO-247AC pinout, voltage/current ratings, and thermal characteristics. Key improvements - including enhanced 30 V V_GS rating, lower Q_g, reduced C_iss/C_oss, and dynamic dV/dt qualification - provide better gate drive margin and switching robustness without layout changes. No modifications to gate drive circuitry or PCB footprint are required when upgrading from IRFP450 to IRFP450LC.