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Vishay Siliconix IRFP450LCPBF
- Part No.:
- IRFP450LCPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFP450LCPBF.pdf
- Description:
- MOSFET N-CH 500V 14A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:24
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Product details
Overview
IRFP450LCPBF from Vishay Siliconix is a 500 V, 14 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.40 Ω RDS(on) at VGS = 10 V, 74 nC total gate charge, and ±30 V gate-source voltage rating - designed for high-voltage switching in offline SMPS, motor drives, and DC-DC converters.
For engineers reviewing the IRFP450LCPBF datasheet, IRFP450LCPBF pinout, IRFP450LCPBF application, or IRFP450LCPBF equivalent, this device offers verified avalanche ruggedness (14 A repetitive, 760 mJ single-pulse), dynamic dV/dt rating (3.5 V/ns), and isolated mounting hole for thermal management in industrial power stages.
Technical Context
This N-channel MOSFET employs advanced planar silicon technology to achieve ultra-low gate charge and reduced Ciss (2200 pF), Coss (320 pF), and Crss (28 pF) - enabling faster switching with lower drive losses. Its 0.65 °C/W junction-to-case thermal resistance supports high-power operation up to 190 W at TC = 25 °C.
The device integrates a robust body diode with 580–870 ns reverse recovery time and 5.1–7.7 μC Qrr, rated for 14 A continuous source-drain current and 56 A pulsed diode current. It is specified for operation from –55 °C to +150 °C with enhanced 30 V VGS rating and dynamic dV/dt immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports primary-side switching in universal-input AC/DC supplies up to 400 V DC bus. |
| RDS(on) | 0.40 Ω @ VGS = 10 V - enables low conduction loss at 14 A continuous drain current. |
| Qg | 74 nC - reduces gate driver power requirement and improves efficiency in high-frequency PWM stages. |
| EAS | 760 mJ - allows unclamped inductive switching without external snubbers in flyback or forward converters. |
| dV/dt Rating | 3.5 V/ns - ensures noise-immune operation in high-dV/dt environments like motor phase-legs or PFC boost stages. |
| TJ Range | –55 °C to +150 °C - qualified for industrial and extended-temperature embedded power systems. |
| PD | 190 W @ TC = 25 °C - delivers high power density when mounted on heatsink with greased interface (RthCS = 0.24 °C/W). |
Pinout & Package
IRFP450LCPBF uses the TO-247AC package - a high-voltage variant of JEDEC TO-247 with isolated central mounting hole, flat thermal pad, and 4-pin configuration (Drain double-bonded). Package dimensions conform to Vishay Document 91360 (Version 1, Facility Code = 9).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Accepts 10 V logic-level gate drive; ±30 V absolute max rating prevents ESD-induced failure during handling or layout transients. |
| 2 (Drain) | Main power output | Double-bonded lead carries full 14 A continuous current; connected directly to internal die drain metallization and thermal pad. |
| 3 (Source) | Reference node | Serves as return path for load current and gate drive loop; low-inductance connection critical for minimizing switching oscillation. |
| 4 (Drain) | Secondary power output | Second drain bond enhances current sharing and thermal spreading; required for full 190 W dissipation capability. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low Qg (74 nC) | Reduces gate driver IC power consumption and enables use of smaller, lower-cost drivers in high-frequency (>100 kHz) topologies. |
| Repetitive avalanche rated (IAR = 14 A) | Eliminates need for external clamping circuits in hard-switched inductive loads such as relay drivers or solenoid controls. |
| Isolated central mounting hole | Enables mechanical grounding or thermal sinking independent of electrical potential - critical for floating high-side configurations. |
| Dynamic dV/dt rated (3.5 V/ns) | Prevents false turn-on during fast voltage transients in bridge-leg or half-bridge applications without requiring negative gate bias. |
| Enhanced VGS rating (±30 V) | Improves robustness against gate oxide stress during surge events or layout coupling, extending lifetime in noisy industrial environments. |
Applications
| Industrial Motor Drives | Offline Switch-Mode Power Supplies |
|---|---|
|
Use Scenario: Half-bridge inverter stage driving 3-phase induction motors up to 2 kW in HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: High-side and low-side switching element with synchronous body-diode conduction during dead-time. Use Value: 500 V VDS withstands reflected spikes from motor windings; 14 A ID supports peak torque currents without derating. |
Use Scenario: Primary-side switch in 300–500 W universal-input flyback or LLC resonant converters. IC Role / Device Role / Timing Role: Main power switch modulated at 65–300 kHz; handles 400 V DC bus with minimal conduction loss. Use Value: 0.40 Ω RDS(on) limits I²R loss to <1.6 W at 2 A RMS; 74 nC Qg keeps gate drive loss below 150 mW at 200 kHz. |
| DC-DC Boost Converters | Uninterruptible Power Systems |
|
Use Scenario: Input-stage boost converter raising 12–48 V battery input to 380 V DC bus in telecom rectifiers or solar microinverters. IC Role / Device Role / Timing Role: High-current, high-voltage switch operating at 100–200 kHz with duty cycle >70%. Use Value: Repetitive avalanche rating absorbs energy from inductor current overshoot during line transients; 150 °C TJ rating sustains operation under sustained overload. |
Use Scenario: Static switch and battery charger control in 1–3 kVA online UPS units with dual-conversion architecture. IC Role / Device Role / Timing Role: Bidirectional power flow control element supporting both rectification and inversion paths. Use Value: Body diode VSD = 1.4 V enables efficient freewheeling during inverter mode; 56 A ISM supports short-circuit ride-through. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK50ZFP | 500 V, 14 A, RDS(on) = 0.42 Ω, Qg = 65 nC, TO-220FP package | Limited to 125 W PD; no isolated mounting hole or avalanche rating | Lower-cost option for space-constrained, non-avalanche-critical 100–200 W designs where thermal margin is sufficient. |
| IXFH14N50P3 | 500 V, 14 A, RDS(on) = 0.38 Ω, Qg = 62 nC, TO-247 package, no isolated hole | Higher dV/dt rating (5.0 V/ns); not repetitive avalanche rated | Better switching speed for high-frequency PFC stages, but requires external avalanche protection in inductive loads. |
Compared with STP14NK50ZFP and IXFH14N50P3, IRFP450LCPBF uniquely combines repetitive avalanche ruggedness, isolated mounting, and proven 3.5 V/ns dV/dt immunity - making it preferred for industrial motor drives and offline SMPS where reliability under fault conditions is mandatory.
Availability
IRFP450LCPBF is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, and DC-DC boost converters requiring stable component supply across multi-year production cycles.
Supply support for IRFP450LCPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The IRFP450LCPBF belongs to Vishay's "High Voltage Power MOSFET" product line, engineered specifically for ruggedized switching in industrial, telecom, and renewable energy systems where avalanche capability and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFP450LCPBF at 100 °C case temperature?
The IRFP450LCPBF supports 8.6 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be validated against actual heatsink performance and ambient conditions in the final design. The IRFP450LCPBF maintains safe operation within its SOA curve up to this current level when properly mounted.
Does IRFP450LCPBF have a built-in body diode, and what are its key parameters?
Yes, IRFP450LCPBF integrates a monolithic body diode with 14 A continuous source-drain current rating, 56 A pulsed capability, 1.4 V forward voltage at 14 A and 25 °C, and 580–870 ns reverse recovery time. Its Qrr is 5.1–7.7 μC, enabling controlled commutation in synchronous rectifier and half-bridge topologies without external diodes.
Can IRFP450LCPBF be used in avalanche mode, and what are the limits?
Yes, IRFP450LCPBF is explicitly repetitive avalanche rated: 14 A IAR and 19 mJ EAR per pulse, with single-pulse avalanche energy up to 760 mJ. Operation in avalanche requires strict adherence to pulse width and duty cycle limits defined in Figure 11 and 12 of the datasheet; the IRFP450LCPBF must remain within its transient thermal impedance envelope to avoid junction overheating.
What is the gate threshold voltage range for IRFP450LCPBF, and how does it affect drive design?
The gate threshold voltage (VGS(th)) for IRFP450LCPBF is 2.0–4.0 V at VDS = VGS and ID = 250 μA. This range confirms standard-level (not logic-level) drive requirements: full enhancement occurs only above ~10 V, so gate drivers must deliver ≥12 V with sufficient current to charge 74 nC Qg rapidly. The IRFP450LCPBF is not compatible with 3.3 V or 5 V logic without level-shifting.
How does the isolated mounting hole in the TO-247AC package benefit thermal and electrical design?
The isolated central mounting hole in the IRFP450LCPBF's TO-247AC package allows mechanical attachment to a heatsink without electrically connecting the drain to chassis ground - essential for high-side switching, floating gate drivers, or systems requiring reinforced isolation. It also improves thermal spreading by enabling direct thermal pad contact while maintaining >3 mm creepage/clearance to adjacent conductors. This feature is absent in standard TO-247 variants and is explicitly documented in Vishay Package Drawing 91360.
IRFP450LCPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 74 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFP450LCPBF FAQ
1.How can I place an order for IRFP450LCPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFP450LCPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFP450LCPBF reliable?
The price and inventory of IRFP450LCPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP450LCPBF is usually 5 days.
3.What payment methods are accepted for IRFP450LCPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP450LCPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFP450LCPBF?
IRFP450LCPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFP450LCPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFP450LCPBF?
For technical support, including IRFP450LCPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP450LCPBF requirements.
6.How does Aetrix verify that IRFP450LCPBF is sourced from the original manufacturer or authorized distributors?
All IRFP450LCPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP450LCPBF meets industry standards.
7.What is the process for return or replacement of IRFP450LCPBF?
All IRFP450LCPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP450LCPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFP450LCPBF part is unused and in its original packaging.
Return procedure for IRFP450LCPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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