Vishay Siliconix IRFP450NPBF
- Part No.:
- IRFP450NPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFP450NPBF.pdf
- Description:
- MOSFET N-CH 500V 14A TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,530
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Product details
Overview
IRFP450NPBF from Vishay Siliconix is a 500 V, 14 A N-channel power MOSFET in TO-247 package, featuring 0.37 Ω RDS(on) at VGS = 10 V, 77 nC total gate charge, and 170 mJ single-pulse avalanche energy-designed for high-voltage switching in SMPS half-bridge and PFC boost stages.
For engineers reviewing the IRFP450NPBF datasheet, IRFP450NPBF pinout, IRFP450NPBF application, or IRFP450NPBF equivalent, key selection criteria include its 500 V VDS, 0.37 Ω on-resistance, 77 nC Qg, avalanche ruggedness (EAS = 170 mJ), and TO-247 thermal performance (RthJC = 0.64 °C/W).
Technical Context
This discrete N-channel enhancement-mode MOSFET operates with gate threshold voltage of 3.0–5.0 V and supports fast switching via low Qgd/Qg ratio (34/77 nC). Its body diode exhibits trr = 430–650 ns and Qrr = 3.7–5.6 µC under 14 A, 100 A/µs conditions.
The device is characterized for linear SOA operation up to 100 µs pulses and rated for repetitive avalanche current IAR = 14 A. Thermal design leverages RthJC = 0.64 °C/W and maximum PD = 200 W at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports primary-side switching in offline 400 V DC bus applications |
| RDS(on) max | 0.37 Ω at VGS = 10 V - enables <1.5 W conduction loss at 8.4 A continuous drain current |
| Qg max | 77 nC - determines gate driver power requirement and switching speed in hard-switched topologies |
| EAS | 170 mJ - provides unclamped inductive switching margin without external snubbers |
| tr/tf | 63 ns / 25 ns - enables >100 kHz operation in resonant and hard-switched converters |
| RthJC | 0.64 °C/W - allows 125 °C junction rise with ~128 W dissipation at 25 °C case temperature |
| VSD | 1.4 V at IS = 14 A - defines forward drop and power loss during synchronous rectification or freewheeling |
Pinout & Package
IRFP450NPBF uses the industry-standard TO-247AC package with isolated tab (drain-connected), offering high thermal conductivity and mechanical robustness for high-power mounting. Pin assignment follows standard three-terminal configuration: Gate (G), Drain (D), Source (S).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives 10 V drive to achieve full enhancement; 3.0–5.0 V VGS(th) enables compatibility with standard logic-level drivers |
| D | Drain (high-side switch node) | Connected to TO-247 metal tab; rated for 500 V blocking and 56 A pulsed current (IDM) |
| S | Source (power return path) | Common reference for gate drive and current sensing; forms intrinsic body diode anode with drain |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg (77 nC) | Reduces gate driver complexity and dynamic losses in high-frequency SMPS designs |
| Characterized Coss eff. (110 pF) | Enables accurate soft-switching timing prediction in LLC and ZVS topologies |
| Avalanche-rated (EAS = 170 mJ) | Eliminates need for external clamping circuits in transformer-coupled or inductive load switching |
| Lead (Pb)-free TO-247 | Complies with RoHS Directive 2011/65/EU and supports lead-free reflow soldering up to 300 °C peak |
| Body diode trr (430–650 ns) | Minimizes reverse recovery loss and EMI in bridge-leg commutation when used as freewheeling element |
Applications
| Switch Mode Power Supply | Uninterruptible Power Supply |
|---|---|
Use Scenario: Primary-side switching in 500–1000 W two-transistor forward or half-bridge SMPS operating from 375–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage N-channel power switch handling 14 A continuous drain current and 500 V blocking. Use Value: 0.37 Ω RDS(on) limits conduction loss to ≤1.5 W; 170 mJ EAS withstands transformer leakage energy without snubber. | Use Scenario: Inverter stage of line-interactive UPS delivering clean 230 V AC output during mains failure. IC Role / Device Role / Timing Role: Full-bridge power switch managing bidirectional energy flow between battery bank and AC output stage. Use Value: 56 A pulsed drain rating (IDM) supports surge loads; 1.4 V body diode drop reduces freewheeling loss during battery discharge mode. |
| High-Speed Power Switching | PFC Boost Converter |
Use Scenario: Solid-state relay replacement in industrial motor control requiring >100 kHz switching and 500 V isolation. IC Role / Device Role / Timing Role: Fast-turning discrete switch enabling precise PWM-controlled power delivery with minimal dead-time penalty. Use Value: 25 ns fall time and 63 ns rise time support >150 kHz operation; dV/dt ruggedness of 5.0 V/ns prevents spurious turn-on in noisy environments. | Use Scenario: Boost switch in active PFC front-end for server PSUs meeting 80 PLUS Titanium efficiency standards. IC Role / Device Role / Timing Role: High-voltage switch in continuous conduction mode (CCM) boost topology operating at 65–100 kHz. Use Value: Low Qgd/Qg ratio (34/77 nC) improves voltage-dependent switching efficiency; characterized Ciss/Coss enables stable loop compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK50ZFP | 500 V, 14 A, RDS(on) = 0.38 Ω, Qg = 65 nC, TO-220FP package | Lower thermal resistance to ambient but higher RthJC (1.2 °C/W); limited to 125 W PD | Preferred where board space is constrained and heatsinking is ambient-limited; not suitable for same PCB layout due to TO-220FP footprint |
| IXTH14N50L2 | 500 V, 14 A, RDS(on) = 0.39 Ω, Qg = 52 nC, TO-247 package, logic-level (VGS(th) = 2–4 V) | Lower gate charge and logic-compatible threshold; lower EAS (120 mJ) | Optimal for microcontroller-driven systems needing 5 V gate drive; requires verification of avalanche margin in unclamped inductive loads |
Compared with STP14NK50ZFP and IXTH14N50L2, IRFP450NPBF offers superior avalanche energy rating (170 mJ vs. 120/100 mJ) and lower RthJC (0.64 °C/W), making it preferred for high-reliability, high-thermal-load SMPS and UPS inverters where gate drive voltage ≥10 V is available.
Availability
IRFP450NPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply and long-term industrial availability.
Supply support for IRFP450NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.
The IRFP450NPBF belongs to Vishay's high-voltage power MOSFET product line, engineered for demanding offline power conversion applications including telecom rectifiers, industrial motor drives, and renewable energy inverters.
FAQ
What is the maximum continuous drain current rating for IRFP450NPBF at 100 °C case temperature?
The IRFP450NPBF has a maximum continuous drain current (ID) of 8.8 A at TC = 100 °C, derated from 14 A at 25 °C using a linear derating factor of 1.6 W/°C. This reflects thermal limitations of the TO-247 package under real-world heatsink conditions. The IRFP450NPBF datasheet specifies this value in Absolute Maximum Ratings and confirms it in Fig. 9 (Maximum Drain Current vs. Case Temperature).
Does IRFP450NPBF have a fully characterized body diode, and what are its key recovery parameters?
Yes, the IRFP450NPBF features a fully characterized intrinsic body diode with trr = 430–650 ns and Qrr = 3.7–5.6 µC at IF = 14 A, dI/dt = 100 A/µs, and TJ = 25 °C. These values are measured per JEDEC standards and documented in the "Drain-Source Body Diode Characteristics" section of the IRFP450NPBF datasheet. VSD is specified at 1.4 V under the same conditions.
Is IRFP450NPBF RoHS-compliant and lead-free?
Yes, IRFP450NPBF is RoHS-compliant and lead (Pb)-free, as confirmed by the "Lead (Pb)-free" marking in the Ordering Information table and the "RoHS COMPLIANT" label in the Product Summary. It meets EU Directive 2011/65/EU and supports peak soldering temperatures up to 300 °C for 10 seconds, per Vishay's Soldering Recommendations.
What is the thermal resistance from junction to case (RthJC) for IRFP450NPBF, and how does it impact heatsink design?
The IRFP450NPBF has a maximum junction-to-case thermal resistance (RthJC) of 0.64 °C/W, measured from junction to the TO-247 drain tab. This low value enables efficient heat transfer to external heatsinks-e.g., at 128 W dissipation, junction temperature rises only 82 °C above case temperature. This parameter is critical for sizing heatsinks in high-power SMPS and UPS inverters using IRFP450NPBF.
Can IRFP450NPBF be used in avalanche mode, and what is its rated single-pulse energy?
Yes, IRFP450NPBF is fully rated for repetitive and single-pulse avalanche operation, with EAS = 170 mJ (single-pulse) and IAR = 14 A (repetitive) at TJ = 25 °C. These ratings are validated per JEDEC test conditions (L = 1.7 mH, RG = 25 Ω, IAS = 14 A) and appear in both Absolute Maximum Ratings and Typical Characteristics (Fig. 12c). Designers may rely on IRFP450NPBF's avalanche capability in unclamped inductive switching without external protection.
IRFP450NPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 370mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFP450NPBF FAQ
1.How can I place an order for IRFP450NPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFP450NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFP450NPBF reliable?
The price and inventory of IRFP450NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP450NPBF is usually 5 days.
3.What payment methods are accepted for IRFP450NPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP450NPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFP450NPBF?
IRFP450NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFP450NPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFP450NPBF?
For technical support, including IRFP450NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP450NPBF requirements.
6.How does Aetrix verify that IRFP450NPBF is sourced from the original manufacturer or authorized distributors?
All IRFP450NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP450NPBF meets industry standards.
7.What is the process for return or replacement of IRFP450NPBF?
All IRFP450NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP450NPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFP450NPBF part is unused and in its original packaging.
Return procedure for IRFP450NPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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