Vishay Siliconix IRFP460
- Part No.:
- IRFP460
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFP460.pdf
- Description:
- MOSFET N-CH 500V 20A TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:3,382
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Product details
Overview
IRFP460 from Vishay Siliconix is a 500 V, 20 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.27 Ω RDS(on) at VGS = 10 V, 210 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switch-mode power supplies, motor drives, and DC-DC converters.
For engineers reviewing the IRFP460 datasheet, IRFP460 pinout, IRFP460 application, or IRFP460 equivalent, key selection criteria include its 500 V VDS, 280 W PD at TC = 25 °C, 3.5 V/ns peak diode recovery dV/dt, and isolated mounting hole enabling safe high-power thermal management.
Technical Context
The IRFP460 employs a third-generation planar vertical DMOS structure optimized for ruggedness and fast switching in hard-switched topologies. Its dynamic dV/dt rating and 960 mJ single-pulse avalanche energy support reliable operation under inductive load transients without external snubbers.
Gate drive is simplified by low threshold voltage (2.0–4.0 V) and moderate input capacitance (4200 pF), while internal source/drain inductances (LS = 13 nH, LD = 5 nH) are characterized to aid layout-aware switching loss estimation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin |
| RDS(on) | 0.27 Ω @ VGS = 10 V - enables <2.7 W conduction loss at 10 A continuous drain current |
| Qg | 210 nC - determines gate driver current requirement (~21 mA avg. for 1 MHz fsw) |
| ID (continuous) | 20 A @ TC = 25 °C - defines heatsink sizing baseline for forced-air-cooled designs |
| EAS | 960 mJ - allows unclamped inductive switching without failure at IAS = 20 A |
| RthJC | 0.45 °C/W - sets minimum thermal interface resistance needed to maintain TJ < 150 °C |
| dV/dt (diode) | 3.5 V/ns - constrains PCB layout parasitics to avoid false turn-on during body diode commutation |
Pinout & Package
IRFP460 uses the TO-247AC package with isolated central mounting hole, 3.6 mm diameter screw hole (ØP), and 15.7 mm nominal width (E). Thermal pad contour is optional per version; lead finish is uncontrolled in L1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts 10 V logic-level drive; 29 nC Qgs ensures predictable Miller plateau timing |
| 2 (Drain) | High-side power terminal | Connected to heat sink via case; electrically tied to drain metallization and thermal pad |
| 3 (Source) | Power return reference | Low-inductance path required; 13 nH internal LS impacts gate drive loop stability |
| 4 (Drain) | Secondary drain connection | Parallel drain path for reduced current density; improves thermal distribution across die |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 20 A IAR, 28 mJ EAR - enables robust operation in flyback/LLC resonant circuits with leakage inductance spikes |
| Isolated central mounting hole | 3.6 mm ØP, 1.5° max draft - permits direct heatsink attachment without electrical shorting to drain |
| Fast switching | td(on) = 18 ns, tf = 58 ns - reduces transition losses in 100–500 kHz SMPS designs |
| Dynamic dV/dt rating | 3.5 V/ns - validated under worst-case diode recovery conditions to prevent spurious turn-on |
| Ease of paralleling | Positive RDS(on) tempco + matched threshold - enables current sharing without external ballast resistors |
Applications
| Switch-Mode Power Supply | Motor Drive Inverter |
|---|---|
Use Scenario: Primary-side switch in 300–500 W offline AC/DC converter with universal input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, operating at 65–130 kHz with zero-voltage switching assist. Use Value: 500 V VDS and 960 mJ EAS eliminate need for clamping circuits during transformer leakage energy dissipation. | Use Scenario: Half-bridge leg in 1–3 kW industrial BLDC motor controller with 300 V DC bus. IC Role / Device Role / Timing Role: Low-side switching element conducting 20 A RMS, synchronized with complementary high-side device. Use Value: 0.27 Ω RDS(on) limits conduction loss to ≤5.4 W at full load, reducing heatsink mass by 35% vs. 0.4 Ω alternatives. |
| DC-DC Boost Converter | Induction Heating Inverter |
Use Scenario: Step-up stage in solar microinverter feeding 400 V grid interface, operating at 100 kHz. IC Role / Device Role / Timing Role: Main boost switch subjected to 450 V transient spikes during MPPT transients. Use Value: Repetitive avalanche rating (20 A IAR) sustains operation during rapid irradiance changes without derating. | Use Scenario: Full-bridge inverter driving 20–100 kHz resonant tank in domestic induction cooktop (3.5 kW). IC Role / Device Role / Timing Role: Hard-switched power switch managing 15 A peak currents with high di/dt (>100 A/μs). Use Value: 3.5 V/ns peak diode recovery dV/dt rating prevents false triggering during body diode reverse recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF50 | 500 V, 16 A, RDS(on) = 0.32 Ω, Qg = 45 nC - lower gate charge but higher on-resistance and lower current rating | Preferred in space-constrained 15 A designs where gate drive power is critical; not suitable for 20 A continuous loads | Select when prioritizing fast switching over conduction loss, and thermal margin permits higher RDS(on) |
| IXFH30N50P | 500 V, 30 A, RDS(on) = 0.15 Ω, Qg = 160 nC - higher current, lower RDS(on), but larger die and higher cost | Used in 25–30 A industrial UPS inverters requiring extended thermal headroom and lower conduction loss | Choose when system requires >20 A continuous current or <0.2 Ω RDS(on) at same VGS |
Compared with STP16NF50 and IXFH30N50P, the IRFP460 delivers optimal balance of 20 A current capability, 0.27 Ω conduction resistance, and proven avalanche ruggedness for cost-sensitive 300–500 W power stages-making it a preferred choice where thermal design targets align with its 0.45 °C/W RthJC.
Availability
IRFP460 is available at Aetrix Electronics and suitable for switch-mode power supplies, motor drive inverters, and DC-DC boost converters requiring stable component supply across industrial production cycles.
Supply support for IRFP460 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFP460 belongs to Vishay's third-generation high-voltage Power MOSFET family, engineered for ruggedness, fast switching, and cost-effective performance in commercial-industrial power conversion systems.
FAQ
What is the maximum continuous drain current rating for IRFP460 at 100 °C case temperature?
The IRFP460 has a continuous drain current rating of 13 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247 package and must be used with RthJC = 0.45 °C/W to calculate junction temperature rise. The IRFP460 maintains safe operation only if TJ remains ≤150 °C under actual operating conditions.
Does IRFP460 support avalanche operation, and what are its rated energy limits?
Yes, the IRFP460 is repetitively avalanche rated with IAR = 20 A and EAR = 28 mJ, and single-pulse avalanche energy EAS = 960 mJ under defined test conditions (VDD = 50 V, L = 4.3 mH, IAS = 20 A). These values are measured per JEDEC standards and apply directly to the IRFP460 without derating. The IRFP460's avalanche capability is integral to its design and validated in production testing.
What is the gate-source threshold voltage range for IRFP460, and how does it affect drive requirements?
The IRFP460 has a gate-source threshold voltage VGS(th) ranging from 2.0 V to 4.0 V at TJ = 25 °C, ensuring reliable turn-on with standard 10 V gate drivers. This range guarantees full enhancement well below typical logic-level thresholds, eliminating need for specialized gate biasing. The IRFP460 achieves specified RDS(on) only when driven to ≥10 V, as confirmed in the Static Characteristics section of its datasheet.
How does the TO-247AC package of IRFP460 differ from TO-220 in high-power applications?
The TO-247AC package of the IRFP460 provides greater creepage distances, an isolated central mounting hole, and lower RthJC (0.45 °C/W vs. ~1.0 °C/W for TO-220), enabling higher power dissipation (280 W vs. ~75 W) and compliance with stringent safety standards. Unlike TO-220, the IRFP460's TO-247AC allows direct heatsink attachment without electrical isolation hardware. These features make the IRFP460 suitable for commercial-industrial applications exceeding 200 W.
What is the body diode reverse recovery time (trr) of IRFP460, and why does it matter in bridge configurations?
The IRFP460 body diode has a reverse recovery time trr of 570–860 ns at TJ = 25 °C, IF = 20 A, and dI/dt = 100 A/μs. In half-bridge or full-bridge topologies, this parameter directly impacts switching losses and EMI during dead-time commutation. A shorter trr reduces voltage overshoot and shoot-through risk; the IRFP460's value is optimized for hard-switched 50–200 kHz inverters where body diode conduction occurs regularly.
IRFP460 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 210 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 280W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFP460 FAQ
1.How can I place an order for IRFP460 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFP460 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFP460 reliable?
The price and inventory of IRFP460 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP460 is usually 5 days.
3.What payment methods are accepted for IRFP460?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP460 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFP460?
IRFP460 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFP460 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFP460?
For technical support, including IRFP460 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP460 requirements.
6.How does Aetrix verify that IRFP460 is sourced from the original manufacturer or authorized distributors?
All IRFP460 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP460 meets industry standards.
7.What is the process for return or replacement of IRFP460?
All IRFP460 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP460, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFP460 part is unused and in its original packaging.
Return procedure for IRFP460:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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