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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFP460HPBF

Name: IRFP460HPBF
Brand: Vishay Siliconix
SKU: IRFP460HPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP460HPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP460HPBF.pdf

Description:: POWER MOSFET TO-247AC, 270 M @ 1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP460HPBF from Vishay Siliconix is a 500 V, 20 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.234 Ω (V_GS = 10 V), Q_g = 116 nC max, and avalanche-rated energy E_AS = 621 mJ - designed for high-efficiency switching in telecom and industrial PFC stages.

For engineers reviewing the IRFP460HPBF datasheet, IRFP460HPBF pinout, IRFP460HPBF application, or IRFP460HPBF equivalent, this device is evaluated for high-voltage hard-switched topologies requiring robust unclamped inductive switching capability, low gate charge, and stable R_DS(on) over temperature in server PSU and solar inverter half-bridge legs.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized cell pitch and trench-free structure to achieve low figure-of-merit (R_DS(on) × Q_g = 27.1 Ω·nC) and reduced Co(er) of 114 pF - enabling faster switching transitions while maintaining ruggedness against dv/dt-induced turn-on (rated at 66 V/ns at T_J = 125 °C).

Its integral body diode supports synchronous rectification and freewheeling in bridge configurations, with trr = 384 ns (typ.), Q_rr = 5.1 μC, and V_SD = 1.2 V at I_S = 12 A - validated under 100 A/μs di/dt stress per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for transient overvoltage in PFC and inverter stages
R_DS(on) typ	0.234 Ω @ V_GS = 10 V, I_D = 12 A - enables <1.5 W conduction loss at 12 A continuous current in TO-247AC package
Q_g max	116 nC - determines gate drive power requirement (~1.16 mW per MHz at 10 V swing) and influences switching speed control
E_AS	621 mJ - specifies single-pulse unclamped inductive switching capability without failure, critical for hard-switched SMPS reliability
C_oss typ	163 pF @ V_DS = 100 V - contributes to turn-off energy loss (E_off ∝ C_oss × V_DS²) and impacts ZVS feasibility
T_J range	–55 °C to +150 °C - ensures operation in sealed industrial enclosures and high-ambient telecom rectifiers
R_thJC max	0.45 °C/W - allows >300 W dissipation with ≤65 °C case-to-junction rise, supporting forced-air-cooled 1–3 kW designs

Pinout & Package

IRFP460HPBF uses the TO-247AC package - a through-hole, high-voltage variant of JEDEC TO-247 with isolated drain tab, optimized thermal pad contour, and 3-pin lead frame (Gate, Drain, Source). Dimensions comply with Vishay Package Drawing 91360 (Version 1, Facility Code 9), including D = 20.40–20.70 mm, E = 15.50–15.87 mm, and L = 14.90–15.40 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; requires <116 nC charge for full enhancement; high-impedance input (IGSS ≤ ±100 nA @ ±20 V)
2 (Drain)	Main high-side current path	Connected to heat sink via isolated metal tab; carries full load current and withstands 500 V blocking; electrically tied to package backside
3 (Source)	Reference node / return path	Common reference for gate drive and current sensing; forms source terminal of internal body diode; low-inductance connection critical for dv/dt immunity

Key Features

Feature	Design Value
Avalanche energy rated (UIS)	621 mJ single-pulse rating enables reliable operation in inductive switching without external snubbers in welder and motor drive H-bridges
Low effective output capacitance (Co(er))	114 pF reduces turn-off switching loss and improves efficiency in 50–100 kHz hard-switched PFC and DC-DC converters
Reduced Q_g/Q_gd ratio	Q_gd/Q_g = 30 % minimizes Miller plateau duration, improving controllability during dV/dt transitions in high-side configurations
Body diode with fast recovery	trr = 384 ns (typ.) and Q_rr = 5.1 μC support bidirectional current flow in LLC resonant tanks and synchronous rectifier flyback designs
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Material Category 1 (green) per doc# 99912 - suitable for export-controlled industrial systems

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW front-end AC-DC converter with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 100 kHz with 50 % duty cycle. Use Value: Low R_DS(on) and Co(er) reduce conduction and turn-off losses by 18 % vs. legacy 550 V MOSFETs, enabling 95.2 % peak efficiency.	Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW with universal AC input. IC Role / Device Role / Timing Role: Fast-switching boost switch subjected to repetitive 100 A surge currents and 66 V/ns dv/dt stress. Use Value: Avalanche rating and 66 V/ns dv/dt immunity prevent false turn-on and catastrophic failure during line transients and hot-swap events.
Solar PV Inverter	Induction Heating
Use Scenario: DC-link switching in 5 kW string inverter H-bridge with SiC diode clamping. IC Role / Device Role / Timing Role: Low-side switch in two-level inverter leg, conducting 22 A RMS with 10 kHz PWM modulation. Use Value: R_thJC = 0.45 °C/W and 150 °C T_J rating allow sustained operation at 85 °C ambient without derating in sealed outdoor enclosures.	Use Scenario: Half-bridge inverter driving 20 kHz resonant tank for 8 kW induction furnace. IC Role / Device Role / Timing Role: Hard-switched power switch enduring repetitive 54 A pulsed drain current and 4.3 mH inductive load stress. Use Value: E_AS = 621 mJ and ID_M = 54 A ensure survival during zero-crossing commutation faults and coil detuning events.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW front-end AC-DC converter with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 100 kHz with 50 % duty cycle.

Use Value: Low R_DS(on) and Co(er) reduce conduction and turn-off losses by 18 % vs. legacy 550 V MOSFETs, enabling 95.2 % peak efficiency.

Use Scenario: Boost PFC stage in -48 V telecom rectifier delivering 2.5 kW with universal AC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch subjected to repetitive 100 A surge currents and 66 V/ns dv/dt stress.

Use Value: Avalanche rating and 66 V/ns dv/dt immunity prevent false turn-on and catastrophic failure during line transients and hot-swap events.

Solar PV Inverter

Induction Heating

Use Scenario: DC-link switching in 5 kW string inverter H-bridge with SiC diode clamping.

IC Role / Device Role / Timing Role: Low-side switch in two-level inverter leg, conducting 22 A RMS with 10 kHz PWM modulation.

Use Value: R_thJC = 0.45 °C/W and 150 °C T_J rating allow sustained operation at 85 °C ambient without derating in sealed outdoor enclosures.

Use Scenario: Half-bridge inverter driving 20 kHz resonant tank for 8 kW induction furnace.

IC Role / Device Role / Timing Role: Hard-switched power switch enduring repetitive 54 A pulsed drain current and 4.3 mH inductive load stress.

Use Value: E_AS = 621 mJ and ID_M = 54 A ensure survival during zero-crossing commutation faults and coil detuning events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DS, 55 A I_D, R_DS(on) = 0.018 Ω - lower voltage, higher current, logic-level gate (V_GS(th) = 1–2.5 V)	Not suitable for 400 V bus; limited to low-voltage DC-DC and BLDC drivers	Select only for sub-100 V systems requiring <2.5 V gate drive compatibility
IXFH50N50P	500 V V_DS, 50 A I_D, R_DS(on) = 0.1 Ω, Q_g = 140 nC - higher current, lower R_DS(on), but larger gate charge	Higher conduction efficiency at >25 A, but increased drive loss and slower switching than IRFP460HPBF	Prefer for high-current, lower-frequency (<50 kHz) applications where thermal headroom exceeds 329 W

Compared with STP55NF06L and IXFH50N50P, the IRFP460HPBF delivers optimal balance of 500 V rating, 20 A continuous current, and 116 nC gate charge - making it uniquely suited for 1–3 kW telecom/server PSUs where voltage margin, switching loss, and avalanche ruggedness are jointly critical.

Availability

IRFP460HPBF is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles and extended lifecycle management.

Supply support for IRFP460HPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFP460HPBF belongs to Vishay's high-voltage power MOSFET product line, engineered for rugged hard-switched applications demanding high avalanche energy, low gate charge, and stable parametric performance across –55 °C to +150 °C.

FAQ

What is the maximum continuous drain current for IRFP460HPBF at 100 °C case temperature?

The IRFP460HPBF supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247AC package and ensures junction temperature remains ≤150 °C under steady-state conduction. At 25 °C case temperature, the rating increases to 20 A.

Does IRFP460HPBF have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFP460HPBF integrates a monolithic body diode with typical reverse recovery time (t_rr) of 384 ns and reverse recovery charge (Q_rr) of 5.1 μC at T_J = 25 °C, I_F = 12 A, and di/dt = 100 A/μs. These values are measured per JEDEC JESD24-11 and confirm suitability for freewheeling in non-synchronous buck and flyback converters.

Is IRFP460HPBF compatible with standard TO-247 heatsink mounting hardware?

Yes, the IRFP460HPBF uses the industry-standard TO-247AC outline (JEDEC MO-218AA), with mechanical dimensions fully aligned to Vishay Package Drawing 91360. Its isolated drain tab accepts M3 screws and standard mica or silicone insulator pads, enabling direct drop-in replacement in existing TO-247-based thermal designs.

What is the gate-source threshold voltage range for IRFP460HPBF, and how does it affect drive requirements?

The IRFP460HPBF has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This confirms it is a standard-threshold MOSFET requiring ≥10 V gate drive for full enhancement. Drive circuits must deliver sufficient current to charge 116 nC gate charge within required switching times while avoiding Miller-induced shoot-through.

How is the avalanche capability of IRFP460HPBF validated, and what test conditions apply?

The IRFP460HPBF is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 621 mJ, tested per JEDEC JESD24-10 at V_DD = 120 V, starting T_J = 25 °C, L = 4.3 mH, R_g = 25 Ω, and I_AS = 17 A. This validates ruggedness against inductive energy dump during fault conditions in motor drives and welding equipment.

IRFP460HPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 116 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3208 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 329W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP460HPBF FAQ

1.How can I place an order for IRFP460HPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP460HPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP460HPBF reliable?

The price and inventory of IRFP460HPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP460HPBF is usually 5 days.

3.What payment methods are accepted for IRFP460HPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP460HPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP460HPBF?

IRFP460HPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP460HPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP460HPBF?

For technical support, including IRFP460HPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP460HPBF requirements.

6.How does Aetrix verify that IRFP460HPBF is sourced from the original manufacturer or authorized distributors?

All IRFP460HPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP460HPBF meets industry standards.

7.What is the process for return or replacement of IRFP460HPBF?

All IRFP460HPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP460HPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP460HPBF part is unused and in its original packaging.

Return procedure for IRFP460HPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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