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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP4668PBFXKMA1

Name: IRFP4668PBFXKMA1
Brand: Infineon Technologies
SKU: IRFP4668PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP4668PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP4668PBFXKMA1.pdf

Description:: TRENCH >=100V PG-TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP4668PBFXKMA1 from Infineon Technologies is a 200V, 130A N-channel enhancement-mode power MOSFET in TO-247AC package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers 8.0 mΩ typical R_DS(on) at V_GS = 10 V, 760 mJ single-pulse avalanche energy, and 57 V/ns peak diode recovery dv/dt - enabling robust operation in UPS and telecom power systems.

For engineers reviewing the IRFP4668PBFXKMA1 datasheet, IRFP4668PBFXKMA1 pinout, IRFP4668PBFXKMA1 application, or IRFP4668PBFXKMA1 equivalent, key selection criteria include its 520 W P_D rating at T_C = 25°C, 161 nC total gate charge, 130 ns reverse recovery time at 25°C, and validated unclamped inductive switching capability up to 81 A.

Technical Context

This HEXFET® power MOSFET employs planar stripe cell structure with optimized gate oxide and body diode design to achieve enhanced dynamic ruggedness. Its 0.29 °C/W R_θJC enables high-power density thermal management, while fully characterized C_oss eff. (ER) = 630 pF and C_iss = 10.72 nF support precise snubberless ZVS/ZCS circuit modeling.

The device features tightly specified avalanche SOA (760 mJ E_AS, I_AR = 81 A), 1.3 V V_SD body diode forward voltage at 81 A, and 155 ns trr at 125°C - confirming suitability for high-reliability, high-dI/dt synchronous rectification where body diode commutation stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 200 V drain-source blocking voltage before avalanche onset, supporting 48 V–110 V input DC bus designs.
R_DS(on) typ.	8.0 mΩ @ V_GS = 10 V, I_D = 81 A - Enables <1.3 W conduction loss at 81 A, reducing heatsink requirements in 3–5 kW SMPS.
Q_g	161 nC max - Determines gate driver current demand; requires ≥6 A peak drive for 25 ns turn-on with 2.7 Ω gate resistor.
trr	130 ns @ T_J = 25°C - Defines minimum dead-time margin in synchronous buck converters to avoid shoot-through during body diode commutation.
E_AS	760 mJ - Specifies single-pulse unclamped inductive switching capability, validating safe operation under worst-case load dump or short-circuit events.
dv/dt (peak)	57 V/ns - Confirms immunity to parasitic turn-on during fast voltage transients in half-bridge configurations.
P_D @ T_C = 25°C	520 W - Sets maximum continuous power dissipation limit when mounted on adequately heatsunk TO-247 interface surface.

Pinout & Package

IRFP4668PBFXKMA1 uses the industry-standard TO-247AC package: isolated tab (drain), three-leaded through-hole configuration with 0.29 °C/W junction-to-case thermal resistance. Not suitable for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Source	Power return node / reference for gate drive	Low-inductance connection point for source loop; critical for minimizing gate oscillation in high-dI/dt switching.
Gate	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor (2.7 Ω typical) to damp ringing and control dV/dt.

Key Features

Feature	Design Value
Fully characterized avalanche SOA	760 mJ E_AS with defined I_AR = 81 A pulse limits - enables reliable overcurrent protection without external crowbar circuits.
Enhanced body diode dV/dt and dI/dt capability	57 V/ns peak recovery dv/dt and 520 A/µs di/dt rating - supports clean zero-voltage switching in LLC resonant converters.
Low C_oss eff. (ER)	630 pF effective output capacitance - reduces turn-off energy loss and improves light-load efficiency in hard-switched topologies.
Lead-free construction	RoHS-compliant Pb-free plating and solderable terminations - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) requirements.

Applications

Server PSU Synchronous Rectification

Telecom 48 V DC-DC Converter

Use Scenario: Secondary-side rectification in 3.3 V/50 A output stage of 80 PLUS Titanium server power supply.

IC Role / Device Role / Timing Role: Power MOSFET replacing Schottky diode to reduce conduction loss and improve full-load efficiency by >1.2%.

Use Value: 8.0 mΩ R_DS(on) cuts rectifier loss to <1.3 W vs. >4.5 W for 60 V Schottky, directly enabling 96.5% measured efficiency at 50% load.

Use Scenario: Isolated forward converter output switch in -48 V telecom rectifier module operating at 250 kHz.

IC Role / Device Role / Timing Role: High-speed synchronous rectifier with controlled body diode commutation during dead-time intervals.

Use Value: 130 ns trr and 57 V/ns dv/dt rating allow 120 ns minimum dead-time, reducing voltage overshoot and improving transient response.

Industrial UPS Inverter Stage

EV Onboard Charger PFC Switch

Use Scenario: Half-bridge leg in 5 kVA double-conversion UPS inverter delivering 230 V AC output.

IC Role / Device Role / Timing Role: High-current, high-ruggedness switching element handling 130 A peak load current and line surges.

Use Value: 760 mJ E_AS and 520 A pulsed drain current rating ensure survival during 10 ms grid fault conditions without derating.

Use Scenario: Boost switch in 6.6 kW OBC PFC stage operating at 100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: Main switching transistor managing 25 A RMS current and 1.6 kW conduction loss budget.

Use Value: 0.29 °C/W R_θJC allows direct mounting to cold plate, maintaining T_J < 125°C at full power with 15°C/W system thermal resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-ruggedness power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF20	200 V, 90 A, R_DS(on) = 11.5 mΩ, Q_g = 140 nC, TO-247 package	Lower current rating and higher R_DS(on); reduced avalanche energy (E_AS = 480 mJ)	Acceptable for ≤4 kW designs with relaxed thermal margin and lower peak current demands.
IXFH130N20X3	200 V, 130 A, R_DS(on) = 7.2 mΩ, Q_g = 175 nC, TO-247 package	Lower R_DS(on) but higher gate charge; no published dv/dt rating or body diode trr data	Preferred where conduction loss dominates, but requires additional dv/dt validation for hard-switched UPS use.

Compared with STW90NF20 and IXFH130N20X3, IRFP4668PBFXKMA1 offers the best balance of avalanche ruggedness (760 mJ), verified 57 V/ns dv/dt immunity, and documented 130 ns trr - making it uniquely suited for unclamped inductive switching in mission-critical power systems.

Availability

IRFP4668PBFXKMA1 is available at Aetrix Electronics and suitable for server PSU synchronous rectification, telecom DC-DC conversion, industrial UPS inverters, and EV onboard charger PFC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP4668PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies and motor drives demanding superior avalanche ruggedness and dynamic parameter consistency.

FAQ

Is IRFP4668PBFXKMA1 RoHS-compliant and lead-free?

Yes. IRFP4668PBFXKMA1 is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and China RoHS. The TO-247AC package uses matte tin-plated leads and meets IPC-J-STD-020 MSL-1 requirements for moisture sensitivity.

What is the maximum recommended gate resistor value for hard-switching at 250 kHz?

For 250 kHz hard-switching with 10 V gate drive, a 2.7 Ω gate resistor is specified in the datasheet to limit peak gate current and suppress oscillation. Using >4.7 Ω increases turn-on delay beyond 41 ns and risks incomplete turn-on during short pulses, raising conduction loss and thermal stress.

Can IRFP4668PBFXKMA1 replace IRFP4668PbF in existing designs?

Yes. IRFP4668PBFXKMA1 is a branded distribution variant of the base IRFP4668PbF, sharing identical electrical specifications, thermal performance, mechanical dimensions, and TO-247AC footprint. No layout or firmware changes are required for drop-in replacement.

Does this MOSFET require negative gate bias for reliable turn-off in high-noise environments?

No. The device has a gate threshold voltage range of 3.0–5.0 V and exhibits no false turn-on up to 57 V/ns dv/dt without negative bias. However, a –5 V to –10 V gate pull-down during off-state improves noise immunity in high-di/dt PCB layouts with shared source paths.

IRFP4668PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.7mOhm @ 81A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 241 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 10720 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 520W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP4668PBFXKMA1 FAQ

1.How can I place an order for IRFP4668PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4668PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4668PBFXKMA1 reliable?

The price and inventory of IRFP4668PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4668PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFP4668PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4668PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4668PBFXKMA1?

IRFP4668PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4668PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4668PBFXKMA1?

For technical support, including IRFP4668PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4668PBFXKMA1 requirements.

6.How does Aetrix verify that IRFP4668PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFP4668PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4668PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFP4668PBFXKMA1?

All IRFP4668PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4668PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4668PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFP4668PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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