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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP4768PBFXKMA1

Name: IRFP4768PBFXKMA1
Brand: Infineon Technologies
SKU: IRFP4768PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP4768PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP4768PBFXKMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP4768PBFXKMA1 from Infineon Technologies is a 250V, 93A N-channel enhancement-mode Power MOSFET in TO-247AC package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers 14.5 mΩ typical R_DS(on) at V_GS = 10 V, 770 mJ single-pulse avalanche energy, and 24 V/ns peak diode recovery dv/dt - enabling robust operation in UPS and telecom power stages.

For engineers reviewing the IRFP4768PBFXKMA1 datasheet, IRFP4768PBFXKMA1 pinout, IRFP4768PBFXKMA1 application, or IRFP4768PBFXKMA1 equivalent, key selection criteria include its thermally limited EAS rating, characterized C_oss eff. (510 pF), body diode dI/dt capability up to 950 A/µs, and validated SOA in repetitive avalanche conditions per AN-1005.

Technical Context

This device employs HEXFET® silicon technology with optimized cell layout for low gate charge (180–270 nC) and minimized reverse recovery charge (1480–2260 nC). Its dynamic parameters - including 72 nC Q_gd, 108 nC Q_sync, and 110 ns fall time - support efficient zero-voltage switching (ZVS) and resonant topologies.

The MOSFET features fully characterized avalanche SOA and enhanced body diode ruggedness, with trr = 180 ns (T_J = 25°C) and I_RRM = 16 A under 100 A/µs di/dt. Thermal resistance R_θJC is 0.29 °C/W, enabling high-power density designs when mounted on greased heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Maximum blocking voltage before avalanche onset; supports 200 V bus designs with 25% margin.
R_DS(on) typ.	14.5 mΩ at V_GS = 10 V, I_D = 56 A - Enables <1.5 W conduction loss at 93 A continuous drain current.
Q_g	180–270 nC - Determines gate drive power requirement; impacts switching loss in 100–500 kHz SMPS.
E_AS	770 mJ (single-pulse, thermally limited) - Quantifies unclamped inductive switching robustness without external snubbers.
C_oss eff. (ER)	510 pF - Energy-related output capacitance used to calculate turn-off loss in hard-switched converters.
dv/dt (diode)	24 V/ns - Maximum sustainable rate of voltage rise across source-drain during body diode commutation.
R_θJC	0.29 °C/W - Junction-to-case thermal resistance; defines minimum heatsink interface performance for 520 W dissipation.

Pinout & Package

IRFP4768PBFXKMA1 uses the industry-standard TO-247AC package: isolated tab, vertical lead frame, and screw-mount compatible footprint (16.0 × 21.0 mm body, 4.7 mm height). The case is electrically connected to the Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side power path	Connected to heatsink; carries full load current and withstands 250 V DC blocking.
S (Source)	Power return / reference node	Low-inductance connection point for current sensing and gate driver ground reference.
G (Gate)	Control input	High-impedance MOS control node requiring <270 nC charge for full enhancement; sensitive to ringing.

Key Features

Feature	Design Value
Enhanced body diode dI/dt capability	Up to 950 A/µs - enables reliable commutation in high-current synchronous rectifiers without oscillation.
Fully characterized avalanche SOA	Validated up to 56 A I_AR and 770 mJ E_AS - allows safe unclamped inductive switching in UPS hold-up circuits.
Low C_oss eff. (510 pF)	Reduces turn-off energy loss in hard-switched topologies operating above 100 kHz.
Lead-free, RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 - eliminates pre-bake requirements for through-hole assembly.

Applications

UPS Power Stage

Server SMPS Rectification

Use Scenario: 3 kVA online UPS inverter stage handling 200 V DC bus with 10 ms transfer time.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology; conducts 93 A continuous during battery discharge.

Use Value: 770 mJ E_AS ensures fault tolerance during short-circuit events without external clamping.

Use Scenario: 12 V/200 A synchronous rectifier in 80 PLUS Titanium server PSU.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diodes; body diode conducts during dead-time.

Use Value: 24 V/ns dv/dt rating prevents false turn-on during fast voltage transitions across transformer secondary.

Telecom Rectifier Module

Industrial Motor Drive Inverter

Use Scenario: 48 V input, 3.3 V/100 A output telecom rectifier using phase-shifted full-bridge.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET with ZVS operation at 250 kHz.

Use Value: 108 nC Q_sync minimizes gate drive loss while maintaining soft switching across load range.

Use Scenario: 230 V AC-fed 5 kW variable frequency drive output stage.

IC Role / Device Role / Timing Role: Inverter leg switch subjected to 66 A continuous current and 370 A pulsed current.

Use Value: 0.29 °C/W R_θJC enables direct mounting to liquid-cooled cold plate for thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF20	200 V V_DSS, 90 A I_D, 18 mΩ R_DS(on), TO-247 package	Limited to 200 V systems; lower avalanche energy (420 mJ)	Select only if bus voltage ≤ 160 V and avalanche stress is minimal.
IXFH90N25X3	250 V V_DSS, 90 A I_D, 15.5 mΩ R_DS(on), TO-247 package, Gen 3 SiC-compatible gate	Higher Q_g (220 nC); optimized for gate drivers with 15 V logic	Prefer for new designs requiring tighter gate threshold control and improved dV/dt immunity.

Compared with STW90NF20 and IXFH90N25X3, IRFP4768PBFXKMA1 offers superior avalanche ruggedness and lower C_oss eff., making it optimal for legacy hard-switched industrial UPS where reliability under transient overload is critical.

Availability

IRFP4768PBFXKMA1 is available at Aetrix Electronics and suitable for uninterruptible power supply (UPS), server SMPS, telecom rectifier modules, and industrial motor drives requiring stable component supply and long-term obsolescence management.

Supply support for IRFP4768PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in hard-switched and resonant topologies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFP4768PBFXKMA1 supports 66 A continuous drain current at T_C = 100°C with V_GS = 10 V. This derating reflects thermal limits of the TO-247AC package and silicon die; operation above this requires active cooling or reduced duty cycle to maintain junction temperature ≤ 175°C.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The gate threshold voltage ranges from 3.0 V to 5.0 V, and the device is fully enhanced at +10 V. While gate drive can tolerate –20 V reverse bias, a negative turn-off voltage is not required - standard 0 V to +10 V or +12 V gate drive suffices for clean switching in SMPS applications.

How is the 770 mJ avalanche energy measured and validated?

E_AS = 770 mJ is measured under unclamped inductive switching (UIS) conditions per JEDEC JESD24-1: L = 0.50 mH, R_G = 25 Ω, I_AS = 56 A, V_GS = 10 V, starting T_J = 25°C. It represents thermally limited single-pulse energy absorption without permanent degradation, verified via destructive testing and thermal modeling.

Can IRFP4768PBFXKMA1 be used in surface-mount designs?

No. The TO-247AC package is explicitly not recommended for surface-mount applications per Infineon's mechanical drawing. It requires through-hole mounting with 6-32 or M3 screw torque of 1.1 N·m and flat greased interface to ensure thermal performance and mechanical stability.

IRFP4768PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 17.5mOhm @ 56A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 270 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10880 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-901

IRFP4768PBFXKMA1 FAQ

1.How can I place an order for IRFP4768PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4768PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4768PBFXKMA1 reliable?

The price and inventory of IRFP4768PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4768PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFP4768PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4768PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4768PBFXKMA1?

IRFP4768PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4768PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4768PBFXKMA1?

For technical support, including IRFP4768PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4768PBFXKMA1 requirements.

6.How does Aetrix verify that IRFP4768PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFP4768PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4768PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFP4768PBFXKMA1?

All IRFP4768PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4768PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4768PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFP4768PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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