Infineon Technologies IRFP7537PBF

Overview

IRFP7537PBF from Infineon Technologies is a 60 V, 172 A N-channel enhancement-mode Power MOSFET in TO-247AC package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 2.75 mΩ typical R_DS(on) at V_GS = 10 V, supports 700 A pulsed drain current, and features enhanced avalanche ruggedness (554 mJ single-pulse E_AS) for robust unclamped inductive switching in half-bridge inverters.

For engineers reviewing the IRFP7537PBF datasheet, IRFP7537PBF pinout, IRFP7537PBF application, or IRFP7537PBF equivalent, key selection criteria include its 0.66 °C/W junction-to-case thermal resistance, 142 nC total gate charge, 10 V/ns diode dv/dt capability at 175 °C, and validated operation in synchronous rectifier and OR-ing configurations with body diode recovery time under 41 ns.

Technical Context

This HEXFET® device uses planar stripe cell structure to achieve low R_DS(on) while maintaining high dV/dt immunity (10 V/ns) and controlled reverse recovery (Q_rr = 56 nC at 125 °C). Its gate threshold voltage (2.1–3.7 V) enables reliable turn-on with standard 10 V gate drivers and supports parallel operation via positive temperature coefficient of R_DS(on).

The MOSFET is characterized for repetitive avalanche (E_AR) and thermally limited single-pulse avalanche (E_AS = 554 mJ), with SOA curves validated up to 100 µs pulse width. Dynamic parameters-including 43 nC Q_gd, 105 ns rise time, and 880 pF C_oss(TR)-are specified at V_DS = 30 V and T_J = 25 °C for hard-switching design validation.

Key Specifications

Pinout & Package

IRFP7537PBF is housed in a TO-247AC package with isolated tab (drain-connected), standard lead pitch (5.4 mm), and screw-mount compatible flange for high-power thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with STW75NF60 and IXFH75N60X3, IRFP7537PBF offers the lowest R_DS(on) and highest continuous current in the 60 V class, making it optimal for thermally constrained, high-efficiency motor drive and DC/DC applications where conduction loss dominates.

Availability

IRFP7537PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across industrial and automotive-grade production programs.

Supply support for IRFP7537PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon-based power devices and wide-bandgap solutions.

The StrongIRFET™ product line delivers high-current, low-R_DS(on) planar MOSFETs engineered for demanding industrial motor control, UPS, and server power applications where thermal reliability and avalanche robustness are critical.

FAQ

Is IRFP7537PBF suitable for paralleling multiple devices in high-current inverters?

Yes. Its positive R_DS(on) temperature coefficient ensures current sharing stability across units. Measured R_DS(on) increases ~0.4%/°C above 25 °C, enabling balanced thermal distribution. Layout must maintain matched gate drive paths and symmetric source inductance to avoid dynamic imbalance.

What is the maximum recommended gate resistor value for hard-switching at 50 kHz?

A 2.7 Ω gate resistor is validated in the datasheet for 50 kHz operation with 105 ns rise time and 84 ns fall time. Increasing beyond 5 Ω risks excessive switching loss and thermal stress; values below 1.5 Ω require careful PCB layout to suppress gate oscillation due to 2.0 Ω intrinsic gate resistance.

Does IRFP7537PBF require external gate clamping for 12 V logic-level drive?

No. The ±20 V absolute maximum V_GS rating accommodates standard 12 V gate drivers without clamping. However, transient overshoot exceeding 15 V should be suppressed using a 12 V Zener or RC snubber, especially in high-dV/dt environments like half-bridge configurations.

Can the body diode be used for continuous freewheeling in a buck converter?

Yes. With 172 A continuous source current rating and 1.2 V forward voltage at 100 A, the body diode supports sustained freewheeling. However, synchronous rectification is strongly preferred-its 2.75 mΩ R_DS(on) yields lower loss than the diode's conduction drop above ~5 A.